Domestic transistors

Results: 425

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Transistor case type Transistor type Mounting type Structure Drain-source voltage Drain current Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain
Transistor MP16B
Transistor MP16B
#10832
 23028 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistor MP16B germanium low-frequency low-power alloyed pnp switching. Designed for application in switching circuit and pulse shaping. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 200мВт 100 pieces. 15В 100мА 1МГц 100
Transistor MP39B
Transistor MP39B
#10835
 23032 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
 — Transistor germanium alloyed pnp amplifying low-frequency with a noise figure normalized at a frequency of 1 kHz. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 15В 30мА 0,5МГц 60
Transistor MP41A
Transistor MP41A
#10836
 23033 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistor MP41A germanium alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 15В 30мА 1МГц 100
Transistor MP38A
Transistor MP38A
#10837
 23034 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistor germanium alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP NPN — — 150мВт 100 pieces. 15В 20мА 2МГц 100
Transistor MP39
Transistor MP39
#10838
 23035 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistor germanium alloyed pnp amplifying low-frequency with non-normalized noise figure at a frequency of 1 kHz. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 15В 30мА 0,5МГц 12
Transistor GT403D
Transistor GT403D
#10841
 23038 СНГ —
17 грн.
10+16,15 грн.
50+15,30 грн.
100+13,60 грн.
 — Transistor GT403D germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers. 3 — Bipolar DIP PNP — — 4Вт 100 pieces. 45В 1,25А — 150
Transistor GT403E
Transistor GT403E
#10842
 23039 СНГ —
16 грн.
10+15,20 грн.
50+14,40 грн.
100+12,80 грн.
 — Transistor GT403E germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers. 3 — Bipolar DIP PNP — — 4Вт 100 pieces. 45В 1,25А — 30
Transistor P403
Transistor P403
#10844
 23041 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
 — Transistor P403 - germanium, amplifying low-power, high-frequency, structures - pnp. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 100мВт 100 pieces. 10В 20мА 120МГц 100
Transistor MP35
Transistor MP35
#10845
 23042 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
 — Transistor germanium alloy npn amplifying low-frequency with non-normalized noise figure at a frequency of 1 kHz. 1.8 КТЮ-3-3 Bipolar DIP NPN — — 150мВт 100 pieces. 15В 20мА 0,5МГц 125
Transistor GT404A
Transistor GT404A
#10848
 23045 СНГ —
42 грн.
10+39,90 грн.
50+37,80 грн.
100+33,60 грн.
 — Transistor GT404A germanium alloy structure npn amplifying. Designed for use in the output stages of low-frequency amplifiers. 3.5 — Bipolar DIP NPN — — 600мВт 50pcs 25В 500мА 1МГц 80
Transistor GT404B
Transistor GT404B
#10849
 23046 СНГ —
42 грн.
10+39,90 грн.
50+37,80 грн.
100+33,60 грн.
 — Transistor GT404B germanium alloy structure npn amplifying. Designed for use in the output stages of low-frequency amplifiers. 3.5 — Bipolar DIP NPN — — 600мВт 50pcs 25В 500мА 1МГц 150
Transistor GT404G
Transistor GT404G
#10850
 23047 СНГ —
45 грн.
10+42,75 грн.
50+40,50 грн.
100+36 грн.
 — Transistor GT404G germanium alloy structure npn amplifying. Designed for use in the output stages of low-frequency amplifiers. 3.5 — Bipolar DIP NPN — — 600мВт 50pcs 40В 500мА 1МГц 150
Transistor KT3117A au
Transistor KT3117A au
#10851
 23048 СНГ —
40 грн.
10+38 грн.
50+36 грн.
100+32 грн.
 — Transistor KT3117A silicon epitaxial-planar structure npn pulse. Designed for use in pulse and switching devices. 0.5 КТ-1 Bipolar DIP NPN — — 300мВт 100 pieces. 60В 400мА 200МГц 200
Transistor 2T3108B (=KT3108B) au
Transistor 2T3108B (=KT3108B) au
#10852
 23049 СНГ —
30 грн.
10+28,50 грн.
50+27 грн.
100+24 грн.
 — Transistor 2T3108B silicon epitaxial-planar structure pnp amplifying with a normalized noise figure at a frequency of 100 MHz. Designed for use in logarithmic video amplifiers and high frequency linear amplifiers. 0.5 КТ-1 Bipolar DIP PNP — — 300мВт 100 pieces. 45В 200мА 250МГц 150
Transistor KT117B au
Transistor KT117B au
#10853
 23050 СНГ —
22 грн.
10+20,90 грн.
50+19,80 грн.
100+17,60 грн.
 — Transistor KT117B silicon epitaxial-planar single-junction with an n-type base. The transistor is intended for use in low-power generators. 0.5 КТ-1 Bipolar DIP n-base — — 300мВт 100 pieces. — — — —
Transistor 2T208B (=KT208B) Ni
Transistor 2T208B (=KT208B) Ni
#11197
 23321 СНГ —
18 грн.
10+17,10 грн.
50+16,20 грн.
100+14,40 грн.
 — The 2T208B transistor is used to amplify, generate and convert electrical signals. 0.3 КТ-1 Bipolar DIP PNP — — 200мВт 100 pieces. 20В 300мА — 120
Transistor KP302VM Au
Transistor KP302VM Au
#11198
 23322 СНГ —
24 грн.
10+22,80 грн.
50+21,60 грн.
100+19,20 грн.
 — KP302VM silicon planar field transistor with a gate based on pn junction and n-type channel. Designed for use in broadband amplifiers in the frequency range up to 150 MHz, as well as in switching and switching devices. 0.4 КТ-1 Field DIP MOS p-channel 20В 30мА 300мВт 100 pieces. — — 150МГц —
Transistor KP959A
Transistor KP959A
#11371
 23480 INTEGRAL —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
 — KP959A silicon key epitaxial-planar transistors with a vertical n-type channel with static induction are designed for use in high-frequency power supply circuits and other high-speed key circuits of electronic equipment. 0.6 TO126 Field DIP MOS n-channel 220В 200мА 7Вт 100 pieces. — — — —
Transistor KP350V Au
Transistor KP350V Au
#11377
 23488 СНГ —
27 грн.
10+25,65 грн.
50+24,30 грн.
100+21,60 грн.
 — Transistors KP350V are silicon diffuse-planar field-effect transistors with two insulated gates and an n-type channel. Designed for use in amplifiers, generators and microwave converters up to 700 MHz. 0.4 КТ-1 Field DIP MOS n-channel — — 200мВт 100 pieces. — — — —
Transistor KP303E Ni
Transistor KP303E Ni
#11408
 23525 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
 — KP303E silicon epitaxial-planar field-effect transistors with a gate based on a pn junction and an n-type channel. 0.4 КТ-1 Field DIP MOS n-channel 25В 20мА 200мВт 100 pieces. — — — —
Transistor KP307E Au
Transistor KP307E Au
#11409
 23526 СНГ —
22 грн.
10+20,90 грн.
50+19,80 грн.
100+17,60 грн.
 — KP307E silicon epitaxial-planar field-effect transistors with a gate based on a pn junction and an n-type channel. 0.4 КТ-1 Field DIP MOS n-channel 27В 25мА 250мВт 100 pieces. — — — —
Transistor KT502B
Transistor KT502B
#11433
 23559 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
 — Transistors KT502B silicon epitaxial-planar structures pnp universal. Designed for use in low-frequency amplifiers, operational, differential and pulse amplifiers, converters 0.3 TO92 Bipolar DIP PNP — — 350мВт 1000pcs 25В 350мА 5МГц 240
Transistor KT502V
Transistor KT502V
#11434
 23560 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
 — Transistors KT502V silicon epitaxial-planar structures pnp universal. Designed for use in low-frequency amplifiers, operational, differential and pulse amplifiers, converters 0.3 TO92 Bipolar DIP PNP — — 350мВт 1000pcs 40В 350мА 5МГц 120
Transistor KT502G
Transistor KT502G
#11435
 23561 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
 — Transistors KT502G silicon epitaxial-planar structures pnp universal. Designed for use in low-frequency amplifiers, operational, differential and pulse amplifiers, converters 0.3 TO92 Bipolar DIP PNP — — 350мВт 1000pcs 40В 350мА 5МГц 240
Transistor KT502E
Transistor KT502E
#11436
 23562 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
 — Transistors KT502E silicon epitaxial-planar structures pnp universal. Designed for use in low-frequency amplifiers, operational, differential and pulse amplifiers, converters 0.3 TO92 Bipolar DIP PNP — — 350мВт 1000pcs 80В 350мА 5МГц 120
Transistor KT503V
Transistor KT503V
#11438
 23565 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
 — Transistors KT503V silicon epitaxial-planar structures npn universal. Designed for use in low-frequency amplifiers, operational and differential amplifiers, converters, pulse devices. 0.3 TO92 Bipolar DIP NPN — — 350мВт 1000pcs 40В 350мА 5МГц 120
Transistor KT503G
Transistor KT503G
#11439
 23566 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
 — Transistors KT503G silicon epitaxial-planar structures npn universal. Designed for use in low-frequency amplifiers, operational and differential amplifiers, converters, pulse devices. 0.3 TO92 Bipolar DIP NPN — — 350мВт 1000pcs 40В 350мА 5МГц 240
Transistor KT209D
Transistor KT209D
#11440
 23567 СНГ —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
 — 0.3 TO92 Bipolar DIP PNP — — 350мВт 1000pcs 60В 350мА — 120
Transistor KT209M
Transistor KT209M
#11441
 23568 СНГ —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
 — 0.3 TO92 Bipolar DIP PNP — — 350мВт 1000pcs 60В 350мА — 120
Transistor KT209A
Transistor KT209A
#11442
 23569 СНГ —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
 — 0.3 TO92 Bipolar DIP PNP — — 350мВт 1000pcs 25В 350мА — 120