Domestic transistors

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Transistor case type Transistor type Mounting type Structure Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain
Transistor 2T608B (=KT608B)
Transistor 2T608B (=KT608B)
#16891
 29138 СНГ —
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
 — Transistors 2T608B silicon epitaxial-planar structures npn switching. Designed for use in high-speed pulse and high-frequency devices. 1.5 КТЮ-3-6 Bipolar DIP NPN 500мВт 100 pieces. 60В 400мА 200МГц 160
Transistor 2T608A (=KT608A)
Transistor 2T608A (=KT608A)
#16892
 29139 СНГ —
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
 — Main technical characteristics of the 2T608A transistor: • Transistor structure: npn; • Рк max - Continuous dissipated power of the collector: 0.5 W; • fgr - Cutoff frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 200 MHz; • Uкбо max - Maximum collector-base voltage at a given collector reverse current and open emitter circuit: 60 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and open collector circuit: 4 V; • Iк max - Maximum permissible direct collector current: 400 mA; • Iк and max - Maximum permissible collector pulse current: 800 mA; • Iкбо - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 10 μA (60 V); • h21э - Static current transfer coefficient of the transistor for circuits with a common emitter: 25...80; • Ck - Collector junction capacitance: no more than 15 pF; • Rke sat - Saturation resistance between collector and emitter: no more than 2.5 Ohm 1.8 КТЮ-3-3 Bipolar DIP NPN 500мВт 100 pieces. 60В 400мА 200МГц 80
Transistor 1T403G (=GT403G)
Transistor 1T403G (=GT403G)
#16925
 29172 СНГ —
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
 — Transistor 1T403G germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, converters and DC stabilizers. 3 — Bipolar DIP PNP 4Вт 100 pieces. 45В 1,25А — 150
Transistor P303A
Transistor P303A
#16927
 29174 СНГ —
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
 — Transistors P303A silicon alloy structure pnp universal. Intended for use in switching devices, output stages of low-frequency amplifiers, DC-DC converters. 9.2 — Bipolar DIP PNP 10Вт 50pcs 65В 500мА 0,1МГц —
Transistor P608A
Transistor P608A
#16948
 29195 СНГ —
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
 — Universal germanium transistor of pnp structure. Designed for use in amplifier, generator and pulse stages of low and high frequency up to 90 MHz. 9.2 — Bipolar DIP PNP 1.5Вт 50pcs 30В 600мА 90МГц 240