Domestic transistors

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Transistor KT859A
Transistor KT859A
#14420
 26629 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
 — Transistor KT859A silicon mezaplanar structure npn switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP NPN — — 40Вт 100 pieces. 800В 3А 10МГц 10
Transistor KT326BM
Transistor KT326BM
#14421
 26630 СНГ —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
 — Transistors KT326BM silicon epitaxial-planar structures pnp amplifying, high-frequency. Designed for use in high and ultra high frequency amplifiers and switching devices. 0.3 TO92 Bipolar DIP PNP — — 200мВт 1000pcs 15В 50мА 250МГц 160
Transistor GT320B
Transistor GT320B
#14474
 26685 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
 — Transistors GT320B germanium diffusion-alloy structures pnp switching. Designed for use in high frequency amplifiers and switching devices. 1.8 КТЮ-3-6 Bipolar DIP PNP — — 200мВт 100 pieces. 11В 150мА 80МГц 120
Transistor GT308A
Transistor GT308A
#14475
 26686 СНГ —
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
 — Transistors GT308A germanium diffusion-alloy structures pnp universal. Designed for use in oscillators, power amplifiers, pulse devices. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 15В 50мА 100МГц 75
Transistor P401
Transistor P401
#14476
 26687 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
 — Transistors P401 - germanium, amplifying low-power, high-frequency, structures - pnp. Designed for use in amplifying and generator stages of shortwave and ultrashortwave radio transmitting devices. 1.8 КТЮ-3-6 Bipolar DIP PNP — — 100мВт 100 pieces. 10В 20мА 30МГц 300
Transistor P403VP
Transistor P403VP
#14477
 26688 СНГ —
9 грн.
10+8,55 грн.
50+8,10 грн.
100+7,20 грн.
 — Transistor P403VP - germanium, amplifying low-power, high-frequency, structures - pnp. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 100мВт 100 pieces. 10В 20мА 120МГц 100
Transistor P403A
Transistor P403A
#14478
 26689 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
 — Transistor P403A - germanium, amplifying low-power, high-frequency, structures - pnp. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 100мВт 100 pieces. 10В 20мА 120МГц 200
Transistor P423
Transistor P423
#14479
 26690 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
 — Germanium transistors, diffusion-alloyed, pnp, amplifying, low-power with a normalized noise figure at a frequency of 1.6 MHz. Are intended for work in amplifying and generator cascades HF cascades. 1.5 КТЮ-3-3 Bipolar DIP PNP — — 100мВт 100 pieces. 10В 20мА 120МГц 100
Transistor KT3120AM
Transistor KT3120AM
#14484
 26696 СНГ —
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
 — KT3120AM transistors are silicon epitaxial-planar npn amplifying structures with a normalized noise figure at a frequency of 400 MHz. Designed for use in the input and subsequent stages of microwave amplifiers. The main technical characteristics of the transistor KT3120AM: • Transistor structure: npn • Рк max - Constant power dissipation of the collector: 100 mW; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 1800 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 15 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 3 V; • Ik max - Maximum allowable DC collector current: 20 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.5 μA; • h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter: more than 40; • Sk - Collector junction capacitance: no more than 2 pF; • tk - Time constant of the feedback circuit at high frequency: no more than 8 ps. 0.2 КТ-14 Bipolar SMD NPN — — 100мВт 20pcs 15В 20мА — 40
Transistor 1T906A (=GT906A)
Transistor 1T906A (=GT906A)
#14615
 26831 СНГ —
28 грн.
10+26,60 грн.
50+25,20 грн.
100+22,40 грн.
 — Transistors 1T906A germanium diffusion-alloy structures pnp switching. Designed for use in voltage converters, switching and pulse amplifying stages of radio electronic devices. The main technical characteristics of the transistor 1T906A: • Structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 15 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 30 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 75 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 1.4 V; • Ik max - Maximum allowable DC collector current: 10 A; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 8 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 30...150; • tk - Time constant of the feedback circuit at high frequency: no more than 5000 ps. 3.5 — Bipolar DIP PNP — — 15Вт 100 pieces. 75В 10А 30МГц 150
Transistor GT115D
Transistor GT115D
#14617
 26833 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistors GT115D germanium alloy pnp low-power. 0.4 — Bipolar DIP PNP — — 50мВт 100 pieces. 20В 30мА 1МГц 250
Transistor KT961A
Transistor KT961A
#14620
 26836 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
 — The main technical characteristics of the transistor KT961A: • Transistor structure: npn; • Рк max - Constant power dissipation of the collector: 1 W; • Pk and max - The maximum allowable pulse power dissipation of the collector: 12.5 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 50 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 100 V (1 kOhm); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V; • Ik max - Maximum allowable DC collector current: 1.5 A; • Ik and max - The maximum allowable collector pulse current: 2 A; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 10 μA (60V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 40...100; • Rke us - Saturation resistance between collector and emitter: no more than 1 ohm. 1 TO126 Bipolar DIP NPN — — 12.5Вт 100 pieces. 100В 2А 50МГц 100
Transistor KT501G Au
Transistor KT501G Au
#14627
 26844 СНГ —
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
 — The main technical characteristics of the transistor KT501G: • Transistor structure: pnp; • Рк max - Constant power dissipation of the collector: 350 mW; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 5 MHz; • Uкer max - Maximum collector-emitter voltage at a given collector current and a given (final) resistance in the base-emitter circuit: 30 V (10 kOhm); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 10 V; • Ik max - Maximum allowable DC collector current: 300 mA; • Ik and max - The maximum allowable collector pulse current: 500 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1 μA; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 20... 60; • Sk - Collector junction capacitance: no more than 50 pF; • Rke us - Saturation resistance between collector and emitter: no more than 1.3 Ohm. 0.6 КТ-1-7 Bipolar DIP PNP — — 350мВт 100 pieces. 30В 300мА 5МГц 60
Transistor GT403G
Transistor GT403G
#15473
 27712 СНГ —
17 грн.
10+16,15 грн.
50+15,30 грн.
100+13,60 грн.
 — Транзистор ГТ403Г германиевый сплавный структуры p-n-p усилительный. Предназначен для применения в переключающих устройствах, выходных каскадах усилителей низкой частоты, преобразователях и стабилизаторах постоянного тока. 3 — Bipolar DIP PNP — — 4Вт 100 pieces. 45В 1,25А — 150
Transistor P29
Transistor P29
#15474
 27713 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistors P29 low power germanium alloy transistors, medium frequency, pnp conductivity. Are intended for work in the radio equipment in the switching and impulse modes. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 30мВт 100 pieces. 12В 6mA 5МГц 50
Transistor MP11A
Transistor MP11A
#16002
 28237 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
 — Main technical characteristics of the MP11A transistor: • Transistor structure: n-p-n • Рк max - Constant dissipated collector power: 150 mW; • fh21b - Limiting frequency of the transistor current transfer coefficient for circuits with a common emitter and common base: not less than 2 MHz; • Ucbo probe - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 15 V; • Uebo probe - Breakdown voltage emitter-base at a given reverse emitter current and open collector circuit: 15 V; • Ik max - Maximum allowable direct collector current: 20 mA; • h21e - Static current transfer coefficient of the transistor in small signal mode for circuits with a common emitter and a common base, respectively: 45 ...100; • Sk - Capacitance of the collector junction: no more than 60 pF. 1.8 КТЮ-3-3 Bipolar DIP NPN — — 150мВт 50pcs 15В 150мА 2МГц 100
Transistor P203E
Transistor P203E
#16184
 28428 СНГ —
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
 — Characteristics of the transistor P203E: PNP structure Uk-e.max. 55V Uk-b.max. 70V Ik.max (permanent) 2A Ib.max. (permanent) 0.75A Pk.max. (without heatsink) 1.0W Pk.max. (with heat sink) 10W Switching power, max 30W Ik.obr., at t=+20ºC no more than 0.02-0.4mA Ik.obr., at t=+60ºC no more than 0.2-3.5mA h21e 40..100 fgr. 200kHz Ub-e.us 0.5-2.0V Uk-e.us 0.5-2.5V Temperature range -55..+70°C. 10 — Bipolar DIP PNP — — 10Вт 50pcs 55В 2А 0,2МГц 100
Транзистор КП934Б
Транзистор КП934Б
#16244
 28490 СНГ —
36 грн.
10+34,20 грн.
50+32,40 грн.
100+28,80 грн.
 — Транзистор КП934Б кремниевый планарный полевой со статической индукцией и каналом n-типа. 17 TO3 Field DIP MOS n-channel 300В 10А 40Вт 10 pieces. — — — —
Transistor GT906A
Transistor GT906A
#16252
 28499 СНГ —
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
 — Transistors GT906A germanium diffusion-alloy pnp switching structures. Designed for use in voltage converters, switching and pulse amplifying stages of radio electronic devices. The main technical characteristics of the transistor GT906A: • Structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 15 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 30 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 75 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 1.4 V; • Ik max - Maximum allowable DC collector current: 10 A; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 8 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 30...150; • tk - Time constant of the feedback circuit at high frequency: no more than 5000 ps. 3.5 — Bipolar DIP PNP — — 15Вт 100 pieces. 75В 10А 30МГц 150
Transistor KT827B
Transistor KT827B
#16253
 28500 СНГ —
100 грн.
10+95 грн.
50+90 грн.
100+80 грн.
 — Main technical characteristics of the KT827B transistor: • Transistor structure: npn; • Ркт max - Constant power dissipation of the collector with heat sink: 125 W; • fgr - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: not less than 4 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 80 V (1 kOhm); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V; • Ik max - Maximum allowable DC collector current: 20 A; • Iк and max - Maximum permissible pulse current of the collector: 40 A; • Iker - Reverse collector-emitter current at a given reverse collector-emitter voltage and resistance in the base-emitter circuit: 3 mA (100V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 750... 18000; • Ск - Capacitance of the collector junction: no more than 400 pF; • Rke us - Saturation resistance between collector and emitter: no more than 0.2 Ohm. 15 TO3 Bipolar DIP NPN — — — 40pcs 80В 20А 4МГц 750
Transistor KT817G
Transistor KT817G
#16465
 28712 СНГ —
14 грн.
10+13,30 грн.
50+12,60 грн.
100+11,20 грн.
 — Transistor KT817G silicon mesa-epitaxial-planar structure npn amplifier. 0.7 TO126 Bipolar DIP NPN — — 25Вт 200pcs 100В 3А 3МГц 40
Transistor GT321D
Transistor GT321D
#16470
 28720 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
 — GT321D transistors are germanium conversion pnp switching structures. Designed for use in switching devices. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 45В 200мА 60МГц 120
Transistor GT321E
Transistor GT321E
#16471
 28721 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
 — GT321E transistors are germanium conversion pnp switching structures. Designed for use in switching devices. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 45В 200мА 60МГц 200
Transistor GT321G
Transistor GT321G
#16472
 28722 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
 — GT321G transistors are germanium conversion pnp switching structures. Designed for use in switching devices. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 45В 200мА 60МГц 60
Transistor KT321V
Transistor KT321V
#16476
 28725 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — KT321V silicon transistors, epitaxial-planar pnp pulse structures. Designed for use in pulse amplifiers and switching devices. 1.5 КТЮ-3-6 Bipolar DIP PNP — — 210мВт 100 pieces. 50В 200мА 60МГц 200
Transistor KT834B
Transistor KT834B
#16517
 28765 СНГ —
200 грн.
10+190 грн.
50+180 грн.
100+160 грн.
 — KT834A transistors are silicon mesaplanar npn composite amplifier structures. Designed for use in current and voltage regulators, in switching devices. 15 TO3 Bipolar DIP NPN — — 100Вт 20pcs 450В 20А 4МГц 3000
Transistor 2T812B (=KT812B)
Transistor 2T812B (=KT812B)
#16518
 28766 СНГ —
70 грн.
10+66,50 грн.
50+63 грн.
100+56 грн.
 — Main technical characteristics of transistor 2T812B: • Transistor structure: npn; • Pk t max - Constant power dissipation of the collector with heat sink: 50 W; • fgr - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: not less than 3 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 300 V (0.1 kOhm); • Uebo max - Maximum emitter-base voltage at a given reverse emitter current and open collector circuit: 7 V; • Iк max - Maximum permissible direct collector current: 8 A; • Iк and max - Maximum permissible pulse current of the collector: 12 A; • Iker - Reverse collector-emitter current at a given reverse collector-emitter voltage and resistance in the base-emitter circuit: 5 mA (700V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 4; • Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm. 15 TO3 Bipolar DIP NPN — — 50Вт 40pcs 300В 10А 3МГц —
Transistor KT602A
Transistor KT602A
#16535
 28784 СНГ —
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
 — Main technical characteristics of the KT602A transistor: • Transistor structure: npn; • Рк max - Constant collector power dissipation: 0.85 W; • Рк and max - Maximum permissible pulsed power dissipation of the collector: 2.8 W; • fgr - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: not less than 150 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 120 V; • Uebo max - Maximum emitter-base voltage at a given reverse emitter current and open collector circuit: 5 V; • Iк max - Maximum permissible direct collector current: 75 mA; • Iк and max - Maximum permissible pulse current of the collector: 500 mA; • Ikbo - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 70 μA; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 20... 80; • Ск - Capacitance of the collector junction: no more than 4 pF; • Rke us - Saturation resistance between collector and emitter: no more than 4 Ohms; • tk - Time constant of the feedback circuit at high frequency: no more than 300 ps. 3 КТЮ-3-9 Bipolar DIP NPN — — 2.8Вт 100 pieces. 100В 500мА 150МГц 80
Transistor KT816G
Transistor KT816G
#16628
 28866 СНГ —
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
 — Transistor KT816G silicon mesa-epitaxial-planar structure pnp amplifier. 0.7 TO126 Bipolar DIP PNP — — 25Вт 200pcs 100В 3А 3МГц 25
Transistor 1T311D (=GT311D)
Transistor 1T311D (=GT311D)
#16887
 29134 СНГ —
14 грн.
10+13,30 грн.
50+12,60 грн.
100+11,20 грн.
 — Bipolar germanium transistor 1T311D, npn, low power, ultra-high frequency. 1.2 — Bipolar DIP NPN — — 150мВт 100 pieces. 12В 50мА 300МГц 180