Domestic transistors

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Transistor case type Transistor type Mounting type Structure Drain-source voltage Drain current Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain
Transistor KT603B
Transistor KT603B
#13540
 25671 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
 — The main technical characteristics of the transistor KT603B: • Transistor structure: npn; • Рк max - Constant power dissipation of the collector: 0.5 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 200 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 30 V (1 kOhm); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 3 V; • Ik max - Maximum allowable DC collector current: 300 mA; • Ik and max - The maximum allowable collector pulse current: 600 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 10 µA; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 60; • Sk - Collector junction capacitance: no more than 15 pF; • Rke us - Saturation resistance between collector and emitter: no more than 7 ohms. 1.5 КТЮ-3-3 Bipolar DIP NPN — — 500мВт 100 pieces. 30В 300мА 200МГц 60
Transistor GT321A
Transistor GT321A
#13541
 25672 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
 — Transistors GT321A germanium conversion structures pnp switching. Designed for use in switching devices. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 50В 200мА 60МГц 60
Transistor GT322B
Transistor GT322B
#13544
 25675 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
 — Transistors GT322B germanium diffusion-alloy structures pnp amplifying with a normalized noise figure. Designed for use in intermediate and high frequency amplifiers. 0.5 КТ-1-7 Bipolar DIP PNP — — 50мВт 100 pieces. 6В 10мА 80МГц 120
Transistor GT322V
Transistor GT322V
#13545
 25676 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
 — Transistors GT322V germanium diffusion-alloy structures pnp amplifying with a normalized noise figure. Designed for use in intermediate and high frequency amplifiers. 0.5 КТ-1-7 Bipolar DIP PNP — — 50мВт 100 pieces. 10В 10мА 50МГц 200
Transistor 2T316G (=KT316G) nick.
Transistor 2T316G (=KT316G) nick.
#13546
 25677 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
 — Transistors silicon epitaxial-planar structures npn universal. Designed for use in high frequency amplifiers. 0.5 КТ-1-7 Bipolar DIP NPN — — 150мВт 100 pieces. 10В 50мА 600МГц 100
Transistor MP36A
Transistor MP36A
#13547
 25679 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistor germanium alloy npn amplifying low-frequency with non-standardized and normalized at a frequency of 1 kHz noise figure. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP NPN — — 150мВт 100 pieces. 15В 20мА 1МГц 45
Transistor MP20
Transistor MP20
#13549
 25682 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistor MP20 germanium alloyed pnp switching low-frequency low-power. Designed for use in switching circuits. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 30В 50мА 2МГц 150
Transistor GT402D
Transistor GT402D
#13679
 25838 СНГ —
42 грн.
10+39,90 грн.
50+37,80 грн.
100+33,60 грн.
 — Transistor GT402D germanium alloy structure pnp amplifying. Designed for use in the output stages of low-frequency amplifiers. 3.5 — Bipolar DIP PNP — — 600мВт 50pcs 25В 500мА 1МГц 80
Transistor GT402I
Transistor GT402I
#13680
 25839 СНГ —
45 грн.
10+42,75 грн.
50+40,50 грн.
100+36 грн.
 — Transistor GT402I germanium alloy structure pnp amplifying. Designed for use in the output stages of low-frequency amplifiers. 3.5 — Bipolar DIP PNP — — 600мВт 50pcs 40В 500мА 1МГц 150
Transistor MP10B
Transistor MP10B
#13699
 25859 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
 — Transistor MP10 germanium alloyed npn amplifying low-frequency with non-normalized noise factors. Designed to amplify low frequency signals. The main technical characteristics of the MP10B transistor: • Transistor structure: npn • Рк max - Constant power dissipation of the collector: 150 mW; • fh21b - The limiting frequency of the transistor current transfer coefficient for circuits with a common emitter and a common base: at least 1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 15 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 20 mA; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 50 μA; • h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter and a common base, respectively: 25...50; • Sk - Collector junction capacitance: no more than 60 pF; • tk - Time constant of the feedback circuit at high frequency: no more than 5000 ps; • Ksh - Transistor noise figure: no more than 10 dB at a frequency of 1 kHz. 1.8 КТЮ-3-3 Bipolar DIP NPN — — 150мВт 100 pieces. 30В 20мА 1МГц 50
Transistor MP42
Transistor MP42
#13701
 25862 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
 — PNP structure Max. e.g. k-b at a given reverse current to and open circuit e. (Ukbo max), V 15 Max. e.g. k-e at a given current to and a given resist. in the circuit b-e. (Uker max), V 15 The maximum allowable current to (Ik max, A) 0.2 Static current transfer coefficient h21e min 20…35 Limiting frequency of the current transfer coefficient fgr, MHz 1 Maximum dissipated power k (Pk, W) 0.2 1.6 КТЮ-3-6 Bipolar DIP PNP — — 200мВт 100 pieces. 15В 200мА 1МГц 35
Transistor KT848A
Transistor KT848A
#13752
 25920 СНГ —
90 грн.
10+85,50 грн.
50+81 грн.
100+72 грн.
 — Transistors KT848A silicon mezaplanar structures npn amplifying. Are intended for application in electronic circuits of ignition of the automobile radio-electronic equipment. The main technical characteristics of the transistor KT848A: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 35 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 3 MHz; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 15 A; • Iкer - Collector-emitter reverse current at given collector-emitter reverse voltage and resistance in the base-emitter circuit: 3 mA (400V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 20; • Rke us - Saturation resistance between collector and emitter: no more than 0.2 Ohm. 15 TO3 Bipolar DIP NPN — — 35Вт 40pcs 400В 15А 3МГц 20
Transistor 2T803A (=KT803A)
Transistor 2T803A (=KT803A)
#13841
 26847 СНГ —
200 грн.
10+190 грн.
50+180 грн.
100+160 грн.
 — Transistors 2T803A silicon mezaplanar structures npn universal. Designed for use in DC amplifiers, horizontal sweep generators, secondary power supplies. 19 КТЮ-3-3 Bipolar DIP NPN — — 60Вт 20pcs 60В 10А 20МГц 50
Transistor 1T806A (=GT806A)
Transistor 1T806A (=GT806A)
#13842
 26019 СНГ —
40 грн.
10+38 грн.
50+36 грн.
100+32 грн.
 — 1T806A Transistors germanium diffusion-alloy structures pnp switching. Transistors 1T806A, 1T806B, 1T806V are designed for use in pulse devices, converters and current and voltage stabilizers. The main technical characteristics of the transistor 1T806A: • Structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 30 W; • fh21b - The limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: at least 10 MHz; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 2 V; • Ik max - Maximum allowable DC collector current: 20 A; • h21e - Voltage feedback coefficient of the transistor in the small signal mode for circuits with a common emitter and a common base, respectively: 10...100; • Rke us - Saturation resistance between collector and emitter: no more than 0.04 Ohm. 22 КТЮ-3-3 Bipolar DIP PNP — — 30Вт 20pcs 40В 20А 10МГц 100
Transistor 2T808A (=KT808A)
Transistor 2T808A (=KT808A)
#13843
 26020 СНГ —
150 грн.
10+142,50 грн.
50+135 грн.
100+120 грн.
 — The main technical characteristics of the transistor 2T808A: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 50W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 7.2 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 120 (250 imp.) V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 4 V; • Ik max - Maximum allowable DC collector current: 10 A; • IКеr - Collector-emitter reverse current at given collector-emitter reverse voltage and resistance in the base-emitter circuit: 3 mA (120V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 10... 50; • Sk - Collector junction capacitance: no more than 500 pF. 30 КТЮ-3-20 Bipolar DIP NPN — — 50Вт 10 pieces. 120В 10А — 50
Transistor KT805BM
Transistor KT805BM
#13925
 26104 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
 — Transistors silicon epitaxial structures npn switching. Designed for use in line-scan output stages, ignition devices for internal combustion engines and other switching devices. 2.5 TO220 Bipolar DIP NPN — — 30Вт 100 pieces. 60В 5А 20МГц 15
Transistor KP302BM Au
Transistor KP302BM Au
#13932
 26111 СНГ —
24 грн.
10+22,80 грн.
50+21,60 грн.
100+19,20 грн.
 — KP302BM silicon planar field transistor with a gate based on pn junction and n-type channel. Designed for use in broadband amplifiers in the frequency range up to 150 MHz, as well as in switching and switching devices. 0.4 КТ-1 Field DIP MOS p-channel 20В 40мА 300мВт 100 pieces. — — 150МГц —
Transistor KT837K
Transistor KT837K
#13948
 26127 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
 — Transistors KT837K silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. The main technical characteristics of the transistor KT837K: • Transistor structure: pnp; • Рк t max - Constant power dissipation of the collector with a heat sink: 30 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 1 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 45 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 7.5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.15 mA; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 50... 150; • Rke us - Saturation resistance between collector and emitter: no more than 0.25 Ohm. 2 TO220 Bipolar DIP PNP — — — 200pcs 40В 7,5A 1МГц 150
Transistor P27A
Transistor P27A
#14256
 26455 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
 — Transistors P27 germanium alloyed pnp amplifying low-frequency with a normalized noise figure at a frequency of 1 kHz. Designed to amplify low frequency signals. Are issued in the glass-to-metal case with flexible conclusions. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 30мВт 100 pieces. 5В 6mA 1МГц 60
Transistor KT349B
Transistor KT349B
#14260
 26459 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — The main technical characteristics of the transistor KT349B: • Transistor structure: pnp; • Рк max - Constant power dissipation of the collector: 200 mW; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 300 MHz; • Uкer max - Maximum collector-emitter voltage at a given collector current and a given (final) resistance in the base-emitter circuit: 15 V (10 kOhm); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 4 V; • Ik max - The maximum allowable DC collector current: 10 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1 μA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 40... 160; • Sk - Collector junction capacitance: no more than 6 pF; • Rke us - Saturation resistance between collector and emitter: no more than 30 ohms. 0.5 КТ-1-7 Bipolar DIP PNP — — 200мВт 100 pieces. 15В 40мА 300МГц 160
Transistor KT603G
Transistor KT603G
#14261
 26460 СНГ —
14 грн.
10+13,30 грн.
50+12,60 грн.
100+11,20 грн.
 — The main technical characteristics of the transistor KT603G: • Transistor structure: npn; • Рк max - Constant power dissipation of the collector: 0.5 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 200 MHz; • Uкer max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 15 V (1kΩ); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 3 V; • Ik max - Maximum allowable DC collector current: 300 mA; • Ik and max - The maximum allowable collector pulse current: 600 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 5 μA; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 60; • Sk - Collector junction capacitance: no more than 15 pF; • Rke us - Saturation resistance between collector and emitter: no more than 7 ohms. 1.5 КТЮ-3-3 Bipolar DIP NPN — — 500мВт 100 pieces. 15В 300мА 200МГц 60
Transistor P215
Transistor P215
#14266
 26465 СНГ —
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
 — Transistors P215 germanium alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. The main technical characteristics of the P215 transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 10 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 80 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.3 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 20... 150; • Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm. 9.2 — Bipolar DIP PNP — — 10Вт 40pcs 70В 5А 0,15МГц 150
Transistor KT819B
Transistor KT819B
#14409
 26617 СНГ —
16 грн.
10+15,20 грн.
50+14,40 грн.
100+12,80 грн.
 — Transistor silicon mesaepitaxial-planar structure npn switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP NPN — — 60Вт 100 pieces. 50В 10А 3МГц 20
Transistor KT605AM
Transistor KT605AM
#14412
 26620 СНГ —
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
 — Transistor silicon mezaplanar structure npn. Designed for use in amplifiers, pulse and high-frequency switching devices. 0.7 TO126 Bipolar DIP NPN — — 400мВт 200pcs 250В 100мА 40МГц 40
Transistor KT855A
Transistor KT855A
#14413
 26621 СНГ —
16 грн.
10+15,20 грн.
50+14,40 грн.
100+12,80 грн.
 — KT855A transistors are silicon epitaxial-planar structures pnp amplifying. Designed for use in converters, linear voltage stabilizers. 2.5 TO220 Bipolar DIP PNP — — 40Вт 100 pieces. 200В 5А 5МГц 20
Transistor KT829A
Transistor KT829A
#14414
 26622 СНГ —
18 грн.
10+17,10 грн.
50+16,20 грн.
100+14,40 грн.
 — Transistors KT829A silicon mezaplanar structures npn compound amplifying. Designed for use in low-frequency amplifiers, switching devices. 2.5 TO220 Bipolar DIP NPN — — 60Вт 200pcs 100В 8А 4МГц 750
Transistor KT865A
Transistor KT865A
#14416
 26625 СНГ —
80 грн.
10+76 грн.
50+72 грн.
100+64 грн.
 — Transistor KT865A silicon epitaxial-planar structure pnp pulse. Designed for use in secondary power supplies, converters, end stages of audio frequency amplifiers, voltage stabilizers. 16 TO3 Bipolar DIP PNP — — 100Вт 20pcs 200В 10А 15МГц 200
Transistor KT854A
Transistor KT854A
#14417
 26626 СНГ —
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
 — Transistors KT854A silicon epitaxial-planar structures npn amplifying. Designed for use in converters, linear stabilizers. 2.5 TO220 Bipolar DIP NPN — — 60Вт 100 pieces. 500В 10А — 20
Transistor KT850A
Transistor KT850A
#14418
 26627 СНГ —
22 грн.
10+20,90 грн.
50+19,80 грн.
100+17,60 грн.
 — Transistors KT850A silicon mezaplanar structures npn amplifying. Designed for use in power amplifiers, switching devices. 2.5 TO220 Bipolar DIP NPN — — 25Вт 100 pieces. 200В 2А 20МГц 200
Transistor 1T901A
Transistor 1T901A
#14419
 26628 СНГ —
30 грн.
10+28,50 грн.
50+27 грн.
100+24 грн.
 — Transistors germanium diffusion-alloy pnp switching high-frequency powerful. 25 — Bipolar DIP PNP — — 15Вт 20pcs 50В 10А 30МГц 60