Domestic transistors

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Transistor case type Transistor type Mounting type Structure Drain-source voltage Drain current Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain
Transistor KP303E Au
Transistor KP303E Au
#12267
 24649 СНГ —
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
 — KP303E silicon epitaxial-planar field-effect transistors with a gate based on a pn junction and an n-type channel. 0.4 КТ-1 Field DIP MOS n-channel 25В 20мА 200мВт 100 pieces. — — — —
Transistor KT3102A
Transistor KT3102A
#12269
 24651 СНГ —
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
 — The main technical characteristics of the transistor KT3102A: • Transistor structure: npn • Рк max - Constant power dissipation of the collector: 250 mW; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 300 MHz; • Vkbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 50 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V; • Ik max - Maximum allowable DC collector current: 100 mA; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 0.05 μA (50V); • h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter: 100...250; • Sk - Collector junction capacitance: no more than 6 pF; • Ksh - Transistor noise figure: no more than 10 dB at a frequency of 1 kHz • tk - Time constant of the feedback circuit at high frequency: no more than 100 ps. 0.34 КТ-1 — DIP NPN — — 250мВт 100 pieces. 50В 200мА 300МГц 250
Transistor P27
Transistor P27
#12270
 24652 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
 — Transistors P27 germanium alloyed pnp amplifying low-frequency with a normalized noise figure at a frequency of 1 kHz. Designed to amplify low frequency signals. Are issued in the glass-to-metal case with flexible conclusions. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 30мВт 100 pieces. 5В 6mA 1МГц 100
Transistor P28
Transistor P28
#12271
 24653 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistors P28 - germanium, amplifying, low power low-frequency, with a normalized noise figure at a frequency of 1KHz, structures - pnp. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 30мВт 100 pieces. 5В 6mA 5МГц 200
Transistor MP37
Transistor MP37
#12272
 24654 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistors MP37 germanium alloyed npn amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. Are issued in the glass-to-metal case with flexible conclusions. 1.8 КТЮ-3-3 Bipolar DIP NPN — — 150мВт 100 pieces. 15В 20мА 1МГц 30
Transistor KT601A Au
Transistor KT601A Au
#12273
 24655 СНГ —
45 грн.
10+42,75 грн.
50+40,50 грн.
100+36 грн.
 — The main technical characteristics of the transistor KT601A: • Transistor structure: npn; • Рк max - Constant power dissipation of the collector: 0.25 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 40 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given (final) resistance in the base-emitter circuit: 100 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 2 V; • Ik max - Maximum allowable DC collector current: 30 mA; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 16; • Sk - Collector junction capacitance: no more than 15 pF; • tk - Time constant of the feedback circuit at high frequency: no more than 600 ps. 2 КТЮ-3-6 Bipolar DIP NPN — — 500мВт 100 pieces. 100В 30мА 40МГц 25
Transistor KT603B Au
Transistor KT603B Au
#12274
 24656 СНГ —
60 грн.
10+57 грн.
50+54 грн.
100+48 грн.
 — The main technical characteristics of the transistor KT603B: • Transistor structure: npn; • Рк max - Constant power dissipation of the collector: 0.5 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 200 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 30 V (1 kOhm); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 3 V; • Ik max - Maximum allowable DC collector current: 300 mA; • Ik and max - The maximum allowable collector pulse current: 600 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 10 µA; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 60; • Sk - Collector junction capacitance: no more than 15 pF; • Rke us - Saturation resistance between collector and emitter: no more than 7 ohms. 1.5 КТЮ-3-6 Bipolar DIP NPN — — 500мВт 100 pieces. 30В 300мА 200МГц 60
Transistor KT808A with fasteners
Transistor KT808A with fasteners
#12276
 24658 СНГ —
80 грн.
10+76 грн.
50+72 грн.
100+64 грн.
 — The main technical characteristics of the transistor KT808A: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 50W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 7.2 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 120 (250 imp.) V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 4 V; • Ik max - Maximum allowable DC collector current: 10 A; • IКеr - Collector-emitter reverse current at given collector-emitter reverse voltage and resistance in the base-emitter circuit: 3 mA (120V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 10... 50; • Sk - Collector junction capacitance: no more than 500 pF. 30 КТЮ-3-20 Bipolar DIP NPN — — 50Вт 10 pieces. 120В 10А — 50
Transistor P422
Transistor P422
#12280
 24662 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
 — Germanium transistors, diffusion-alloyed, pnp, amplifying, low-power with a normalized noise figure at a frequency of 1.6 MHz. Are intended for work in amplifying and generator cascades HF cascades. 1.5 КТЮ-3-3 Bipolar DIP PNP — — 100мВт 100 pieces. 10В 20мА 50МГц 100
Transistor KT837F
Transistor KT837F
#12332
 24682 INTEGRAL —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
 — Transistors silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP PNP — — 30Вт 100 pieces. 40В 7,5A 1МГц 150
Transistor GT328V Au
Transistor GT328V Au
#12334
 24684 СНГ —
30 грн.
10+28,50 грн.
50+27 грн.
100+24 грн.
 — The main technical characteristics of the GT328V transistor: • Structure: pnp • Рк max - Constant power dissipation of the collector: 50 mW; • Fgr - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 300 MHz; • Uкеr samples - Breakdown voltage collector-emitter at a given collector current and a given (final) resistance in the base-emitter circuit: 15 V at 5 kOhm; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 0.25 V; • Ik max - The maximum allowable DC collector current: 10 mA; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 10 μA at 15 V; • h21Э - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 10...50 at 5V, 3mA; • Sk - Collector junction capacitance: no more than 1.5 pF at 5V; • Ksh - Transistor noise factor: no more than 7 dB at a frequency of 180 MHz; • tk - Time constant of the feedback circuit at high frequency: no more than 10 ps. 0.5 КТ-1 Bipolar DIP PNP — — 50мВт 100 pieces. 15В 10мА 300МГц 50
Transistor KT603D Au
Transistor KT603D Au
#12336
 24686 СНГ —
60 грн.
10+57 грн.
50+54 грн.
100+48 грн.
 — Transistors KT603D silicon epitaxial-planar structures npn. Designed for use in pulse and switching high-frequency devices. 1.5 КТЮ-3-6 Bipolar DIP NPN — — 500мВт 100 pieces. 10В 300мА 200МГц 80
Transistor KT3102VM
Transistor KT3102VM
#12368
 24703 СНГ —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
 — 0.3 TO92 Bipolar DIP NPN — — 250мВт 1000pcs 30В 200мА — 500
Transistor KT3102BM
Transistor KT3102BM
#12369
 24704 СНГ —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
 — 0.3 TO92 Bipolar DIP NPN — — 250мВт 1000pcs 50В 200мА — 500
Transistor KT209L
Transistor KT209L
#12370
 24706 СНГ —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
 — 0.3 TO92 Bipolar DIP PNP — — 350мВт 1000pcs 60В 350мА — 60
Transistor 2T312V (=KT312V)
Transistor 2T312V (=KT312V)
#12642
 24998 СНГ —
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
 — Transistors 2T312V silicon epitaxial-planar structures npn universal. Designed for use in switching devices, amplifiers and generators. 0.6 КТЮ-3-1 Bipolar DIP NPN — — 225мВт 200pcs 30В 30мА 120МГц 250
Transistor 2T312A (=KT312A)
Transistor 2T312A (=KT312A)
#12643
 24999 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
 — Transistors 2T312A silicon epitaxial-planar structures npn universal. Designed for use in switching devices, amplifiers and generators. 0.6 КТЮ-3-1 Bipolar DIP NPN — — 225мВт 200pcs 30В 30мА 80МГц 100
Transistor 2T312B (=KT312B)
Transistor 2T312B (=KT312B)
#12644
 25000 СНГ —
14 грн.
10+13,30 грн.
50+12,60 грн.
100+11,20 грн.
 — Transistors 2T312B silicon epitaxial-planar structures npn universal. Designed for use in switching devices, amplifiers and generators. 0.6 КТЮ-3-1 Bipolar DIP NPN — — 225мВт 200pcs 30В 30мА 120МГц 100
Transistor 2T608A (=KT608A) Au
Transistor 2T608A (=KT608A) Au
#12645
 25001 СНГ —
52 грн.
10+49,40 грн.
50+46,80 грн.
100+41,60 грн.
 — Transistors 2T608A silicon epitaxial-planar structures npn switching. Designed for use in high-speed pulsed and high-frequency devices. 1.5 КТЮ-3-6 Bipolar DIP NPN — — 500мВт 100 pieces. 60В 400мА 200МГц 80
Transistor 2T313A (=KT313A)
Transistor 2T313A (=KT313A)
#12646
 25002 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
 — Transistors 2T313A silicon, epitaxial-planar structures pnp universal. Designed for use in high frequency amplifiers and switching devices. 0.4 КТ-1-7 Bipolar DIP PNP — — 300мВт 100 pieces. 50В 350мА 200МГц 120
Transistor 1T311B (=GT311B)
Transistor 1T311B (=GT311B)
#12648
 25003 СНГ —
14 грн.
10+13,30 грн.
50+12,60 грн.
100+11,20 грн.
 — Bipolar germanium transistor GT311B, npn, low power, ultrahigh frequency. 1.2 — Bipolar DIP NPN — — 150мВт 100 pieces. 12В 50мА 300МГц 30
Phototransistor FT-1K gr.1
Phototransistor FT-1K gr.1
#12650
 25005 СНГ —
11 грн.
10+10,45 грн.
50+9,90 грн.
100+8,80 грн.
 — The main technical parameters of the phototransistor FT-1K gr.1: • Photosensitive element size: diameter 1.8 mm; • Area of spectral photosensitivity: 0.5...1.12 microns; • Wavelength of maximum spectral distribution of photosensitivity: 0.8...0.9 µm; • Rated operating voltage: 5 V; • Dark current: no more than 3 mkA; • Current photosensitivity: not less than 0.4 µA/lx. 0.3 — Photo DIP — — — — 100 pieces. — — — —
P605A transistor with flexible leads
P605A transistor with flexible leads
#12773
 25130 СНГ —
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
 — Transistor germanium structure pnp universal. Designed for use in amplifying, generator and pulse stages of low and high frequencies up to 30 MHz. 10 — Bipolar DIP PNP — — 3Вт 40pcs 40В 1.5А 30МГц 120
Transistor GT701A
Transistor GT701A
#12774
 25131 СНГ —
40 грн.
10+38 грн.
50+36 грн.
100+32 грн.
 — Transistor GT701A germanium alloy structure pnp universal. Designed for use in ignition systems of internal combustion engines, as well as in voltage converters. 22 — Bipolar DIP PNP — — 50Вт 20pcs 100В 12А — 75
Transistor 2T908A (=KT908A)
Transistor 2T908A (=KT908A)
#12953
 25224 СНГ —
120 грн.
10+114 грн.
50+108 грн.
100+96 грн.
 — Transistors 2T908A silicon mezaplanar structures npn switching. Designed for use in stabilizers and voltage converters, pulse modulators. The body is metal with glass insulators and hard leads. 22 КТЮ-3-20 Bipolar DIP NPN — — 50Вт 10 pieces. 100В 10А 50МГц 60
Transistor 1T305B (=GT305B)
Transistor 1T305B (=GT305B)
#12954
 25225 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
 — Transistors 1T305B germanium diffusion-alloy structures pnp universal. 0.4 — Bipolar DIP PNP — — 75мВт 100 pieces. 15В 6mA 20МГц 180
Transistor 2T306A (=KT306A)
Transistor 2T306A (=KT306A)
#12958
 25229 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
 — Transistors 2T306A silicon epitaxial-planar structures npn switching and amplifying with non-normalized noise figure. 0.6 КТЮ-3-1 Bipolar DIP NPN — — 150мВт 100 pieces. 10В 30мА 300МГц 60
Transistor 2T306B (=KT306B)
Transistor 2T306B (=KT306B)
#12959
 25230 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
 — Transistors 2T306B silicon epitaxial-planar structures npn switching and amplifying with non-normalized noise figure. 0.6 КТЮ-3-1 Bipolar DIP NPN — — 150мВт 100 pieces. 10В 30мА 500МГц 120
Transistor 2T306V (=KT306V)
Transistor 2T306V (=KT306V)
#12960
 25231 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
 — Transistors 2T306V silicon epitaxial-planar structures npn switching and amplifying with non-normalized noise figure. 0.6 КТЮ-3-1 Bipolar DIP NPN — — 150мВт 100 pieces. 10В 30мА 300МГц 100
Transistor 2T306G (=KT306G)
Transistor 2T306G (=KT306G)
#12961
 25232 СНГ —
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
 — Transistors 2T306G silicon epitaxial-planar structures npn switching and amplifying with non-normalized noise figure. 0.6 КТЮ-3-1 Bipolar DIP NPN — — 150мВт 100 pieces. 10В 30мА 500МГц 200