Domestic transistors

Results: 425

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Transistor case type Transistor type Mounting type Structure Drain-source voltage Drain current Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain
Transistor KT209A
Transistor KT209A
#11442
 23569 СНГ —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
 — 0.3 TO92 Bipolar DIP PNP — — 350мВт 1000pcs 25В 350мА — 120
Transistor KT209Zh
Transistor KT209Zh
#11444
 23572 СНГ —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
 — 0.3 TO92 Bipolar DIP PNP — — 350мВт 1000pcs 45В 350мА — 60
Transistor KT3102GM
Transistor KT3102GM
#11445
 23573 СНГ —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
 — 0.3 TO92 Bipolar DIP NPN — — 250мВт 1000pcs 20В 200мА — 1000
Transistor KT209G
Transistor KT209G
#11447
 23575 СНГ —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
 — 0.3 TO92 Bipolar DIP PNP — — 350мВт 1000pcs 30В 350мА — 60
Transistor KP303D Ni
Transistor KP303D Ni
#11617
 23848 СНГ —
11 грн.
10+10,45 грн.
50+9,90 грн.
100+8,80 грн.
 — KP303D silicon epitaxial-planar field-effect transistors with a gate based on a pn junction and an n-type channel. 0.4 КТ-1 Field DIP MOS n-channel 25В 20мА 200мВт 100 pieces. — — — —
Transistor KP303V Ni
Transistor KP303V Ni
#11618
 23849 СНГ —
11 грн.
10+10,45 грн.
50+9,90 грн.
100+8,80 грн.
 — KP303V silicon epitaxial-planar field-effect transistors with a gate based on a pn junction and an n-type channel. 0.4 КТ-1 Field DIP MOS n-channel 25В 20мА 200мВт 100 pieces. — — — —
Transistor KT3107V
Transistor KT3107V
#11685
 23914 СНГ —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
 — 0.3 TO92 Bipolar DIP PNP — — 300мВт 1000pcs 25В 200мА 200МГц 140
Transistor 2T625AM-2
Transistor 2T625AM-2
#11805
 24034 СНГ —
28 грн.
10+26,60 грн.
50+25,20 грн.
100+22,40 грн.
 — Transistors 2T625AM-2 silicon epitaxial-planar structures npn switching. Are intended for application in pulse devices of the pressurized equipment. Unpackaged with a protective coating and flexible leads. 1.6 — Bipolar SMD NPN — — 1Вт 100 pieces. 40В 1А 200МГц 120
Transistor 2T331V-1
Transistor 2T331V-1
#11807
 24036 СНГ —
38 грн.
10+36,10 грн.
50+34,20 грн.
100+30,40 грн.
 — Silicon epitaxial-planar npn frameless high-frequency transistors. 1.6 — Bipolar — NPN — — — 50pcs — — — 180
Transistor P701
Transistor P701
#11874
 24126 СНГ —
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
 — Transistors P701 silicon alloy-diffusion structures npn amplifying low-frequency. Designed for use in amplifiers and generators of radio electronic devices. 10 — Bipolar DIP NPN — — 10Вт 20pcs 40В 500мА 20МГц 40
Transistor KT3107G
Transistor KT3107G
#11876
 24129 СНГ —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
 — 0.3 TO92 Bipolar DIP PNP — — 300мВт 1000pcs 25В 200мА 200МГц 220
Transistor KT3107L
Transistor KT3107L
#11877
 24130 СНГ —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
 — 0.3 TO92 Bipolar DIP PNP — — 300мВт 1000pcs 20В 200мА 200МГц 800
Transistor P702
Transistor P702
#11878
 24131 СНГ —
50 грн.
10+47,50 грн.
50+45 грн.
100+40 грн.
 — Transistors P702 silicon mezaplanar structures npn amplifying. Designed for use in the output stages of low-frequency amplifiers, switching devices, converters and DC voltage stabilizers. 22 КТЮ-3-3 Bipolar DIP NPN — — 40Вт 20pcs 60В 2А 4МГц 25
Transistor P308
Transistor P308
#11954
 24243 СНГ —
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
 — Transistors P308 silicon planar npn switching low-frequency low-power. Designed for use in switching circuits and DC voltage converters. 1.5 КТЮ-3-6 Bipolar DIP NPN — — 250мВт 100 pieces. 120В 30мА 20МГц 90
Transistor 2T602B (=KT602B)
Transistor 2T602B (=KT602B)
#11955
 24244 СНГ —
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
 — KT602B Transistors silicon planar structures npn. Designed to generate and amplify signals. 3.2 КТЮ-3-9 Bipolar DIP NPN — — 2.8Вт 100 pieces. 100В 75мА 150МГц 220
Transistor KT608B
Transistor KT608B
#11956
 24245 СНГ —
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
 — Transistors KT608B silicon epitaxial-planar structures npn switching. Designed for use in high-speed pulsed and high-frequency devices. 1.5 КТЮ-3-6 Bipolar DIP NPN — — 500мВт 100 pieces. 60В 400мА 200МГц 160
Transistor KT604AM
Transistor KT604AM
#11957
 24246 СНГ —
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
 — KT604AM Transistors silicon mezaplanarny structures npn. 1 TO126 Bipolar DIP NPN — — 3Вт 200pcs 250В 200мА 40МГц 40
Transistor KT639D
Transistor KT639D
#11958
 24247 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
 — Designed for use in low-frequency amplifiers, power amplifiers, video amplifiers, automotive electronic devices, pulse and switching devices, in computer terminal devices. 1 TO126 Bipolar DIP PNP — — 1Вт 100 pieces. 60В 1.5А 80МГц 160
Transistor KT611AM
Transistor KT611AM
#11959
 24248 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — KT611AM Transistors silicon mezaplanar structures npn amplifying. Designed for use in amplifiers and generators. 1 TO126 Bipolar DIP NPN — — 3Вт 100 pieces. 180В 100мА 60МГц 40
Transistor 2T607A-4
Transistor 2T607A-4
#11960
 24249 СНГ —
160 грн.
10+152 грн.
50+144 грн.
100+128 грн.
 — Transistors 2T607A-4 silicon epitaxial-planar structures npn generator. Designed for use in generators and amplifiers in sealed equipment. 0.4 — Bipolar SMD NPN — — 1.5Вт 8pcs 35В 150мА 0,7МГц —
Transistor 2P903V (=KP903V)
Transistor 2P903V (=KP903V)
#11966
 24255 СНГ —
35 грн.
10+33,25 грн.
50+31,50 грн.
100+28 грн.
 — Transistors 2P903V are silicon epitaxial-planar field-effect transistors with an n-type channel and a gate in the form of a reverse-biased pn junction, high-frequency universal. 4.5 КТ-4-2 Field Screw MOS n-channel 20В 700мА 6Вт 20pcs — — — —
Transistor KP327A (=BF961)
Transistor KP327A (=BF961)
#12172
 24464 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
 — KP327A silicon planar transistor with two insulated gates protected by diodes and an n-type channel 0.3 КТ-29 Field SMD MOS n-channel 14В 30мА 200мВт 100 pieces. — — — —
Transistor 2T809A (=KT809A)
Transistor 2T809A (=KT809A)
#12230
 24609 СНГ —
60 грн.
10+57 грн.
50+54 грн.
100+48 грн.
 — The main technical characteristics of the transistor 2T809A: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 40 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 5.1 MHz; • Uкer max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 400 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 4 V; • Ik max - Maximum allowable DC collector current: 3 A; • Ik and max - The maximum allowable collector pulse current: 5 A; • Iкеr - Collector-emitter reverse current at given collector-emitter reverse voltage and resistance in the base-emitter circuit: 3 mA (400 V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 15... 100; • Sk - Collector junction capacitance: no more than 270 pF; • Rke us - Saturation resistance between collector and emitter: no more than 0.75 Ohm. 22 КТЮ-3-3 Bipolar DIP NPN — — 40Вт 20pcs 400В 5А — 100
Transistor P210A
Transistor P210A
#12231
 24610 СНГ —
60 грн.
10+57 грн.
50+54 грн.
100+48 грн.
 — The main technical characteristics of the P210A transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 60 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukeo samples - Breakdown voltage collector-emitter at a given collector current and base open circuit: 65 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 25 V; • Ik max - Maximum allowable DC collector current: 12 A; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 8 mA; • h21E - Static current transfer coefficient for a common emitter circuit in large signal mode: more than 15. 34 — Bipolar DIP PNP — — 60Вт 10 pieces. 65В 12А — 15
Transistor KT816V
Transistor KT816V
#12237
 24616 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
 — Transistor KT816V silicon mesaepitaxial-planar structure pnp amplifying. 0.7 TO126 Bipolar DIP PNP — — 25Вт 200pcs 60В 3А 3МГц 25
Transistor KT812V
Transistor KT812V
#12261
 24643 СНГ —
50 грн.
10+47,50 грн.
50+45 грн.
100+40 грн.
 — The main technical characteristics of the transistor KT812V: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 50 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 3 MHz; • Uкer max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 200 V (0.1 kOhm); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 7 V; • Ik max - Maximum allowable DC collector current: 8 A; • Ik and max - The maximum allowable collector pulse current: 12 A; • Iкer - Collector-emitter reverse current at given collector-emitter reverse voltage and resistance in the base-emitter circuit: 5 mA (700V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 10; • Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm. 16 kt-9 Bipolar DIP NPN — — 50Вт 20pcs 200В 8А 3МГц 10
Transistor KT940B
Transistor KT940B
#12264
 24646 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Silicon epitaxial-planar bipolar structure npn amplifying. 0.7 TO126 Bipolar DIP NPN — — 10Вт 200pcs 250В 100мА 90МГц 25
Transistor KT817A
Transistor KT817A
#12265
 24647 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
 — Transistor KT817A silicon mesa-epitaxial-planar structure npn amplifying. 0.7 TO126 Bipolar DIP NPN — — 25Вт 200pcs 40В 3А 3МГц 40
Transistor KT817V
Transistor KT817V
#12266
 24648 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
 — Transistor KT817V silicon mesa-epitaxial-planar structure npn amplifying. 0.7 TO126 Bipolar DIP NPN — — 25Вт 200pcs 60В 3А 3МГц 40
Transistor KP303E Au
Transistor KP303E Au
#12267
 24649 СНГ —
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
 — KP303E silicon epitaxial-planar field-effect transistors with a gate based on a pn junction and an n-type channel. 0.4 КТ-1 Field DIP MOS n-channel 25В 20мА 200мВт 100 pieces. — — — —