Domestic transistors

Results: 425

Filter layout: |
Filters
MPN Article Brand In stock Price Discounts Quantity Description Weight g. Transistor case type Transistor type Mounting type Structure Drain-source voltage Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain
KT203B nickname.
KT203B nickname.
#6820
 60005 — —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
 — — — — — — — — — — — — — —
KT203V nick.
KT203V nick.
#6821
 60006 — —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
 — — — — — — — — — — — — — —
KT203B OS
KT203B OS
#6822
 60007 — —
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
 — — — — — — — — — — — — — —
KT913B
KT913B
#6823
 60008 — —
40 грн.
10+38 грн.
50+36 грн.
100+32 грн.
 — — — — — — — — — — — — — —
2T610A
2T610A
#6824
 60009 — —
40 грн.
10+38 грн.
50+36 грн.
100+32 грн.
 — — — — — — — — — — — — — —
Transistor GT313A
Transistor GT313A
#6825
 25680 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
 — Transistors GT313A germanium diffusion-alloy structures pnp universal. Designed for use in high and ultra high frequency amplifiers and switching devices. 1.2 — Bipolar DIP PNP — 100мВт 100 pieces. 15В 30мА 300МГц 230
Transistor GT313B
Transistor GT313B
#6826
 28783 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
 — Transistors GT313B germanium diffusion-alloy structures pnp universal. Designed for use in high and ultra high frequency amplifiers and switching devices. 1.2 — Bipolar DIP PNP — 100мВт 100 pieces. 15В 30мА 450МГц 75
KT301E nickname.
#6828
 60013 — —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
 — — — — — — — — — — — — — —
GT329A
#6829
 60014 — —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — — — — — — — — — — — — — —
GT329B
#6830
 60015 — —
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
 — — — — — — — — — — — — — —
Transistor KT3107B
Transistor KT3107B
#6831
 24128 СНГ —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
 — 0.3 TO92 Bipolar DIP PNP — 300мВт 1000pcs 50В 200мА 200МГц 220
Transistor KT3157A
Transistor KT3157A
#6832
 24238 СНГ —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
 — Transistor KT3157A silicon epitaxial-planar structure pnp switching. Designed for use in switching and pulse devices. 0.4 TO92 Bipolar DIP PNP — 200мВт 200pcs 250В 20мА 60МГц 50
Transistor KT209I
Transistor KT209I
#6833
 23570 INTEGRAL —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
 — 0.3 TO92 Bipolar DIP PNP — 200мВт 1000pcs 45В 300мА — 120
Transistor KT502D
Transistor KT502D
#6834
 23563 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
 — Transistors KT502D silicon epitaxial-planar structures pnp universal. Designed for use in low-frequency amplifiers, operational, differential and pulse amplifiers, converters 0.3 TO92 Bipolar DIP PNP — 350мВт 1000pcs 60В 350мА 5МГц 120
Transistor KT503E
Transistor KT503E
#6835
 24705 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
 — Transistors KT503E silicon epitaxial-planar structures npn universal. Designed for use in low-frequency amplifiers, operational and differential amplifiers, converters, pulse devices. 0.3 TO92 Bipolar DIP NPN — 350мВт 1000pcs 80В 350мА 5МГц 120
Transistor KT315V
Transistor KT315V
#6838
 23556 СНГ —
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
 — Transistors silicon epitaxial-planar structures npn amplifying. Designed for use in high, intermediate and low frequency amplifiers. 0.25 КТ-13 Bipolar DIP NPN — 150мВт 800 pcs. 40В 100мА 250МГц 120
Transistor KT315G
Transistor KT315G
#6839
 23554 СНГ —
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
 — Transistors silicon epitaxial-planar structures npn amplifying. Designed for use in high, intermediate and low frequency amplifiers. 0.25 КТ-13 Bipolar DIP NPN — 150мВт 800 pcs. 35В 100мА 250МГц 350
Transistor KT315Zh
Transistor KT315Zh
#6841
 23558 СНГ —
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
 — Transistors silicon epitaxial-planar structures npn amplifying. Designed for use in high, intermediate and low frequency amplifiers. 0.25 КТ-13 Bipolar DIP NPN — 100мВт 800 pcs. 20В 50мА 250МГц 250
Transistor KT361V
Transistor KT361V
#6845
 23483 СНГ —
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
 — Designed for use in high frequency amplifiers. 0.2 КТ-13 Bipolar DIP PNP — 150мВт 1000pcs 40В 50мА 250МГц 160
Transistor KT361D
Transistor KT361D
#6847
 24623 СНГ —
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
 — Designed for use in high frequency amplifiers. 0.2 КТ-13 Bipolar DIP PNP — 150мВт 1000pcs 40В 50мА 250МГц 90
Transistor GT308B
Transistor GT308B
#6849
 25670 СНГ —
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
 — Transistors GT308B germanium diffusion-alloy structures pnp universal. Designed for use in oscillators, power amplifiers, pulse devices. 1.8 КТЮ-3-3 Bipolar DIP PNP — 150мВт 100 pieces. 15В 50мА 120МГц 120
Transistor 1T308V (=GT308V)
Transistor 1T308V (=GT308V)
#6852
 25669 СНГ —
14 грн.
10+13,30 грн.
50+12,60 грн.
100+11,20 грн.
 — Transistors 1T308V germanium diffusion-alloy structures pnp universal. Designed for use in oscillators, power amplifiers, pulse devices. 1.8 КТЮ-3-3 Bipolar DIP PNP — 150мВт 100 pieces. 15В 50мА 120МГц 150
Transistor P214G
Transistor P214G
#9906
 21706 СНГ —
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
 — The main technical characteristics of the P214G transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 10 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 60 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 10 V; • Ik max - Maximum allowable DC collector current: 5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1.5 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: not standardized; • Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm. 10 — Bipolar DIP PNP — 10Вт 20pcs 55В 5А — —
Transistor KT646B
Transistor KT646B
#10111
 21850 INTEGRAL —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
 — 1 TO126 Bipolar DIP NPN — 2.5Вт 500pcs 40В 1А 250МГц 150
Transistor KP103M Au
Transistor KP103M Au
#10318
 22268 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
 — P-FET Structure Maximum drain-source voltage Usi, V 10 Maximum gate-source voltage Uzi max., V 17 Maximum dissipated power Psi max., W 0.12 The slope of the characteristic S, mA /V 1.3 ... 4.4 Housing KT-17 0.7 — Field DIP — — 125мВт 200pcs — — — —
Transistor assembly KPS104G Au
Transistor assembly KPS104G Au
#10382
 22390 СНГ —
45 грн.
10+42,75 грн.
50+40,50 грн.
100+36 грн.
 — The assembly is designed for use in the input stages of differential low-noise amplifiers of low frequency and direct current with high input impedance. 2 — Field DIP MOS n-channel 25В 50мВт 40pcs — — — —
Transistor KT683E
Transistor KT683E
#10731
 22796 СНГ —
3.50 грн.
10+3,32 грн.
50+3,15 грн.
100+2,80 грн.
 — Transistors silicon planar structures npn universal. 0.7 TO126 Bipolar DIP NPN — 1.2Вт 200pcs 60В 1А 50МГц 480
Transistor KT683A
Transistor KT683A
#10732
 22797 СНГ —
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
 — Transistors silicon planar structures npn universal. 0.7 TO126 Bipolar DIP NPN — 1.2Вт 200pcs 150В 1А 50МГц 480
Transistor KT201AM
Transistor KT201AM
#10733
 22798 СНГ —
3.50 грн.
10+3,32 грн.
50+3,15 грн.
100+2,80 грн.
 — Transistors silicon epitaxial-planar structures p-p-p amplifying with non-normalized noise figure at a frequency of 1 kHz. 0.3 TO92 Bipolar DIP NPN — 150мВт 200pcs 20В 20мА 10МГц 60
Transistor KT315D
Transistor KT315D
#10735
 23557 СНГ —
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
 — Transistors silicon epitaxial-planar structures npn amplifying. Designed for use in high, intermediate and low frequency amplifiers. 0.25 КТ-13 Bipolar DIP NPN — 150мВт 800 pcs. 40В 100мА 250МГц 90