Domestic transistors

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Transistor case type Transistor type Mounting type Structure Drain-source voltage Drain current Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain
Transistor KT825G
Transistor KT825G
#17110
 29359 СНГ 2 шт
240 грн.
10+228 грн.
50+216 грн.
100+192 грн.
Main technical characteristics of the KT825G transistor: • Transistor structure: p-n-p; • Рк т max - Continuous dissipated power of the collector with a heat sink: 125 W; • fгр - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: at least 4 MHz; • Uэбо max - Maximum emitter-base voltage at a given reverse emitter current and an open collector circuit: 5 V; • Iк max - Maximum permissible direct collector current: 20 A; • Iк и max - Maximum permissible pulse collector current: 40 A; • h21э - Static current transfer coefficient of the transistor for circuits with a common emitter: 750...18000; • Ск - Collector junction capacitance: no more than 600 pF; • Rke nat - Saturation resistance between collector and emitter: no more than 0.4 Ohm. 16 TO3 Bipolar DIP PNP — — 125Вт 10 pieces. 90В 40А — 18000
Transistor MP20B
Transistor MP20B
#10817
 23012 СНГ 1 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistor MP20B germanium alloyed pnp switching low-frequency low-power. Designed for use in switching circuits. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 30В 50мА 2МГц 200
Transistor GT321B
Transistor GT321B
#13542
 25673 СНГ 1 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistors GT321B germanium conversion structures pnp switching. Designed for use in switching devices. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 50В 200мА 60МГц 120
Transistor KT837B
Transistor KT837B
#14410
 26618 INTEGRAL 1 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP PNP — — 30Вт 100 pieces. 70В 7,5A 1МГц 80
Transistor P304M
Transistor P304M
#14411
 26619 СНГ 1 шт
13 грн.
10+12,35 грн.
50+11,70 грн.
100+10,40 грн.
Transistors P304M silicon alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. 2.5 TO220 Bipolar DIP PNP — — 10Вт 20pcs 50В 500мА 0,05МГц —
Transistor KT837V
Transistor KT837V
#15470
 27709 INTEGRAL 1 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP PNP — — 30Вт 100 pieces. 70В 7,5A 1МГц 150
Transistor 1T403Zh (=GT403Zh)
Transistor 1T403Zh (=GT403Zh)
#16921
 29168 СНГ 1 шт
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
Transistor 1T403Zh germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, converters and DC stabilizers. 3 — Bipolar DIP PNP — — 4Вт 100 pieces. 60В 1,25А — 60
Transistor P217B
Transistor P217B
#16931
 29178 СНГ 1 шт
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
Main technical characteristics of the P217B transistor: • Transistor structure: pnp • Рк t max - Continuous dissipated power of the collector with heat sink: 30 W; • fh21э - Limit frequency of the transistor current transfer coefficient for circuits with a common emitter: not less than 0.2 MHz; • Uкбо проб - Collector-base breakdown voltage at a given collector reverse current and open emitter circuit: 60 V; • Uebo prob - Breakdown voltage emitter-base at a given reverse emitter current and open collector circuit: 15 V; • Iк max - Maximum permissible direct collector current: 7.5 A; • Iкбо - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 0.5 mA; • h21э - Static current transfer coefficient of the transistor in small signal mode for circuits with a common emitter: more than 20; • Rke nat - Saturation resistance between collector and emitter: no more than 0.5 Ohm. 11 — Bipolar DIP PNP — — 30Вт 40pcs 60В 7,5A 0,1МГц —
Transistor KT3102EM
Transistor KT3102EM
#679
 — СНГ —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
 — 0.3 TO92 Bipolar DIP NPN — — 250мВт 1000pcs 20В 200мА — 1000
Transistor KT602AM
Transistor KT602AM
#2377
 24241 СНГ —
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
 — KT602AM Transistors silicon planar structures npn. Designed to generate and amplify signals. 1.2 TO126 Bipolar DIP NPN — — 2.8Вт 100 pieces. 100В 75мА 150МГц 80
Transistor KP103E
Transistor KP103E
#3433
 — СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
 — P-FET Structure Maximum drain-source voltage Usi, V 10 Maximum gate-source voltage Uzi max., V 10 Maximum dissipated power Psi max., W 0.007 Slope of characteristic S, mA/V 0.4…2.4 Housing KT-17 0.7 — Field DIP — — — 125мВт 200pcs — — — —
Transistor KT3107I
Transistor KT3107I
#3434
 23590 СНГ —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
 — 0.3 TO92 Bipolar DIP PNP — — 300мВт 1000pcs 50В 200мА 200МГц 450
Transistor GT905A
Transistor GT905A
#3435
 22330 СНГ —
16 грн.
10+15,20 грн.
50+14,40 грн.
100+12,80 грн.
 — Transistors GT905A germanium diffusion-alloy structures pnp universal. Designed for use in switching and pulse amplifying devices, in the output stages of low-frequency power amplifiers. 5 — Bipolar DIP PNP — — 6Вт 50pcs 65В 7А 30МГц 100
Transistor KT315B
Transistor KT315B
#3437
 23553 СНГ —
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
 — Transistors silicon epitaxial-planar structures npn amplifying. Designed for use in high, intermediate and low frequency amplifiers. 0.25 КТ-13 Bipolar DIP NPN — — 150мВт 800 pcs. 20В 100мА 250МГц 350
Transistor P416B
Transistor P416B
#3438
 23029 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
 — Transistor P416B germanium alloy pnp universal. Designed for use in amplifying and generator cascades in the range from long to short and ultrashort waves, as well as in pulse cascades of radio electronic devices. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 100мВт 100 pieces. 12В 25мА 80МГц 200
Transistor MP42B
Transistor MP42B
#3439
 25861 СНГ —
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
 — PNP structure Max. e.g. k-b at a given reverse current to and open circuit e. (Ukbo max), V 15 Max. e.g. k-e at a given current to and a given resist. in the circuit b-e. (Uker max), V 15 The maximum allowable current to (Ik max, A) 0.2 Static current transfer coefficient h21e min 45…100 Limiting frequency of the current transfer coefficient fgr, MHz 1 Maximum dissipated power k (Pk, W) 0.2 1.6 КТЮ-3-6 Bipolar DIP PNP — — 200мВт 100 pieces. 15В 200мА 1МГц 100
2T603B nickel
2T603B nickel
#3442
 — — —
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
 — 77,79 г. — — — — — — — — — — — — —
Transistor MP15A
Transistor MP15A
#3443
 23011 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistor MP15A germanium alloyed pnp universal low-frequency low-power. Designed for small low frequency signal amplification, amplification, switching, pulse shaping 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 15В 20мА 2МГц 100
Transistor MP41
Transistor MP41
#3444
 24617 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistor MP41 germanium alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 15В 30мА 1МГц 60
Transistor KT808AM
Transistor KT808AM
#3445
 26623 СНГ —
45 грн.
10+42,75 грн.
50+40,50 грн.
100+36 грн.
 — Transistors KT808AM silicon mezaplanar structures npn high-voltage, switching. Designed for use in switching devices, horizontal scanning generators, electronic voltage regulators. 13 TO3 Bipolar DIP NPN — — 70Вт 20pcs 130В 10А 8МГц 125
Transistor KP327B (=BF961)
Transistor KP327B (=BF961)
#3463
 23004 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
 — KP327B silicon planar transistor with two insulated gates protected by diodes and an n-type channel 0.3 КТ-29 Field SMD MOS n-channel 14В 30мА 200мВт 100 pieces. — — — —
2P903A
2P903A
#3464
 — — —
30 грн.
10+28,50 грн.
50+27 грн.
100+24 грн.
 — 89,90 г. — — — — — — — — — — — — —
2P903V OS
2P903V OS
#3465
 — — —
30 грн.
10+28,50 грн.
50+27 грн.
100+24 грн.
 — 87 г. — — — — — — — — — — — — —
2P903V
2P903V
#3466
 — — —
30 грн.
10+28,50 грн.
50+27 грн.
100+24 грн.
 — 89,83 г. — — — — — — — — — — — — —
KP903B
KP903B
#3467
 — — —
26 грн.
10+24,70 грн.
50+23,40 грн.
100+20,80 грн.
 — Structure: N-FET Maximum drain-source voltage Usi, V: 20 Maximum gate-source voltage Uzi max., V: 6.5 Channel resistance in the open state Rsi on, mOhm: - Maximum dissipated power Psi max., W: - Slope characteristic S,mA/V: 90 — — — — — — — — — — — — —
KP903A
KP903A
#3468
 — — —
26 грн.
10+24,70 грн.
50+23,40 грн.
100+20,80 грн.
 — 89 г. — — — — — — — — — — — — —
KT921B
KT921B
#3469
 — — —
60 грн.
10+57 грн.
50+54 грн.
100+48 грн.
 — 91 г. — — — — — — — — — — — — —
Transistor MP37A
Transistor MP37A
#3475
 25678 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
 — NPN structure Max. e.g. k-b at a given reverse current to and open circuit e. (Ukbo max), V 30 Max. e.g. k-e at a given current to and a given resist. in the circuit b-e. (Uker max), V 15 The maximum allowable current to (Ik max, A) 0.2 Static current transfer coefficient h21e min 15…30 Limiting frequency of the current transfer coefficient fgr, MHz 1 Maximum dissipated power k (Pk, W) 0.15 1.8 КТЮ-3-3 Bipolar DIP NPN — — 150мВт 100 pieces. 30В 20мА 1МГц 30
Transistor MP37B
Transistor MP37B
#3477
 25662 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — NPN structure Max. e.g. k-b at a given reverse current to and open circuit e. (Ukbo max), V 15 Max. e.g. k-e at a given current to and a given resist. in the circuit b-e. (Uker max), V 15 The maximum allowable current to (Ik max, A) 0.15 Static current transfer coefficient h21e min 15…30 Limiting frequency of the current transfer coefficient fgr, MHz 1 Maximum dissipated power k (Pk, W) 0.15 1.8 КТЮ-3-3 Bipolar DIP NPN — — 150мВт 100 pieces. 30В 20мА 1МГц 50
Transistor MP20A
Transistor MP20A
#3478
 23002 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistor MP20A germanium alloyed pnp switching low-frequency low-power. Designed for use in switching circuits. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 20В 50мА 2МГц 150