Domestic transistors

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Transistor case type Transistor type Mounting type Structure Drain-source voltage Drain current Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain
Transistor 2T371A (=KT371A)
Transistor 2T371A (=KT371A)
#6827
 22329 СНГ 14 шт
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
Silicon epitaxial-planar structure npn microwave amplifying transistors with a normalized noise figure. 0.2 КТ-14 Bipolar SMD NPN — — 100мВт 200pcs 10В 20мА 3ГГц 240
Transistor GT403I
Transistor GT403I
#10843
 23040 СНГ 14 шт
26 грн.
10+24,70 грн.
50+23,40 грн.
100+20,80 грн.
Transistor GT403I germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers. 3 — Bipolar DIP PNP — — 4Вт 50pcs 60В 1,25А — 30
Transistor KT837M
Transistor KT837M
#15471
 27710 INTEGRAL 14 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP PNP — — 30Вт 100 pieces. 70В 7,5A 1МГц 80
Transistor 2T321D OS(=KT321D)
Transistor 2T321D OS(=KT321D)
#11953
 24242 СНГ 13 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistors 2T321D silicon, epitaxial-planar structures pnp pulse. Designed for use in pulse amplifiers and switching devices. 1.5 КТЮ-3-6 Bipolar DIP PNP — — 210мВт 100 pieces. 40В 200мА 60МГц 120
Transistor P217A
Transistor P217A
#16930
 29177 СНГ 13 шт
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
Main technical characteristics of the P217A transistor: • Transistor structure: pnp • Рк t max - Continuous dissipated power of the collector with heat sink: 30 W; • fh21э - Limit frequency of the transistor current transfer coefficient for circuits with a common emitter: not less than 0.1 MHz; • Uкбо проб - Collector-base breakdown voltage at a given collector reverse current and open emitter circuit: 60 V; • Uebo prob - Breakdown voltage emitter-base at a given reverse emitter current and open collector circuit: 15 V; • Iк max - Maximum permissible direct collector current: 7.5 A; • Iкбо - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 0.5 mA; • h21э - Static current transfer coefficient of the transistor in small signal mode for circuits with a common emitter: 20... 60; • Rke nat - Saturation resistance between collector and emitter: no more than 0.5 Ohm. 11 — Bipolar DIP PNP — — 30Вт 40pcs 60В 7,5A 0,1МГц —
Transistor KT629A
Transistor KT629A
#11376
 23487 СНГ 12 шт
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
Transistors KT629A silicon epitaxial-planar structures pnp switching unpackaged on a ceramic crystal holder with a protective coating with flexible leads. Designed for use in high-speed pulse devices as part of hybrid integrated circuits. 1.8 — Bipolar SMD PNP — — 1Вт 100 pieces. — 1А 250МГц 25
Transistor P214A
Transistor P214A
#13777
 25956 СНГ 11 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
Transistors P214A germanium alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. The main technical characteristics of the P214A transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 10 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 60 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.3 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 50...150; • Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm. 11 — Bipolar DIP PNP — — 10Вт 20pcs 55В 5А 0,15МГц 150
Transistor 2T831V
Transistor 2T831V
#16614
 28852 СНГ 11 шт
44 грн.
10+41,80 грн.
50+39,60 грн.
100+35,20 грн.
Main technical characteristics of the 2T831V transistor: • Transistor structure: npn; • Ркт max - Constant power dissipation of the collector with heat sink: 5 W; • fgr - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: not less than 4 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 80 V; • Uebo max - Maximum emitter-base voltage at a given reverse emitter current and open collector circuit: 5 V; • Iк max - Maximum permissible direct collector current: 2 A; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 25; • Rke us - Saturation resistance between collector and emitter: no more than 0.6 Ohm. 1 TO39 Bipolar DIP NPN — — 1Вт 100 pieces. 70В 2А 4МГц 25
Transistor KT350A
Transistor KT350A
#10810
 23000 СНГ 10 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistor KT350A silicon epitaxial-planar structure pnp universal. Designed for use in high frequency amplifiers and switching devices. 0.3 TO92 Bipolar DIP PNP — — 300мВт 500pcs 15В 60мА 100МГц 200
Transistor 2T903A (=KT903A)
Transistor 2T903A (=KT903A)
#11605
 23831 СНГ 10 шт
40 грн.
10+38 грн.
50+36 грн.
100+32 грн.
Transistor 2T903A silicon mezaplanar structure npn generator. Designed for use in power amplifiers and oscillators. 22 КТЮ-3-3 Bipolar DIP NPN — — 30Вт 20pcs 60В 10А 120МГц 70
Transistor 1T403V (=GT403V)
Transistor 1T403V (=GT403V)
#16923
 29170 СНГ 10 шт
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
Transistor 1T403V germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, converters and DC stabilizers. 3 — Bipolar DIP PNP — — 4Вт 100 pieces. 45В 1,25А — 60
Transistor KT819VM
Transistor KT819VM
#16516
 28764 СНГ 9 шт
75 грн.
10+71,25 грн.
50+67,50 грн.
100+60 грн.
Main technical characteristics of the KT819VM transistor: • Transistor structure: npn; • Рк max - Constant collector power dissipation: 2 W; • Pk t max - Constant power dissipation of the collector with heat sink: 100 W; • fgr - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: not less than 3 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 70 V (0.1 kOhm); • Uebo max - Maximum emitter-base voltage at a given reverse emitter current and open collector circuit: 5 V; • Iк max - Maximum permissible direct collector current: 15 A; • Iк and max - Maximum permissible pulse current of the collector: 20 A; • Ikbo - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 1 mA (40V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 15; • Rke us - Saturation resistance between collector and emitter: no more than 0.4 Ohm. 16 TO3 Bipolar DIP NPN — — 100Вт 20pcs 70В 20А — —
Transistor MP112
Transistor MP112
#10785
 22973 СНГ 8 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistor germanium alloy npn amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP NPN — — 150мВт 100 pieces. 10В 100мА 2МГц 45
Transistor 1T403I (=GT403I)
Transistor 1T403I (=GT403I)
#16924
 29171 СНГ 8 шт
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
Transistor 1T403I germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, converters and DC stabilizers. 3 — Bipolar DIP PNP — — 4Вт 100 pieces. 60В 1,25А — 30
Transistor 1T403A (=GT403A)
Transistor 1T403A (=GT403A)
#16922
 29169 СНГ 7 шт
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
Transistor 1T403A germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, converters and DC stabilizers. 3 — Bipolar DIP PNP — — 4Вт 100 pieces. 30В 1,25А — 60
Transistor 2T321B (=KT321B)
Transistor 2T321B (=KT321B)
#11952
 24240 СНГ 6 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistors 2T321B silicon, epitaxial-planar structures pnp pulse. Designed for use in pulse amplifiers and switching devices. 1.5 КТЮ-3-6 Bipolar DIP PNP — — 210мВт 100 pieces. 50В 200мА 60МГц 120
Transistor KT835A
Transistor KT835A
#3432
 22976 СНГ 5 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
PNP structure Max. e.g. k-b at a given reverse current to and open circuit e. (Ukbo max), V 40 Max. e.g. k-e at a given current to and a given resist. in the B-e circuit. (Uker max), V 30 The maximum allowable current to (Ik max, A) 3 Static current transfer coefficient h21e min 25 Limiting frequency of the current transfer coefficient fgr, MHz 1.00 Maximum dissipated power k (Pk, W) 25 2.5 TO220 Bipolar DIP PNP — — 25Вт 100 pieces. 30В 3А 1МГц 20
Transistor KT803A
Transistor KT803A
#11875
 24127 СНГ 4 шт
170 грн.
10+161,50 грн.
50+153 грн.
100+136 грн.
Transistors KT803A silicon mezaplanar structures npn universal. Designed for use in DC amplifiers, horizontal sweep generators, secondary power supplies. 19 КТЮ-3-3 Bipolar DIP NPN — — 60Вт 20pcs 60В 10А 20МГц 50
Transistor P701A
Transistor P701A
#13738
 25906 СНГ 4 шт
38 грн.
10+36,10 грн.
50+34,20 грн.
100+30,40 грн.
Transistors P701A silicon alloy-diffusion structures npn amplifying low-frequency. Designed for use in amplifiers and generators of radio electronic devices. 10 — Bipolar DIP NPN — — 10Вт 20pcs 60В 500мА 20МГц 60
Transistor GT308V
Transistor GT308V
#6850
 25668 СНГ 3 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors GT308V germanium diffusion-alloy structures pnp universal. Designed for use in oscillators, power amplifiers, pulse devices. The main technical characteristics of the GT308V transistor: • Structure: pnp • Рк max - Constant power dissipation of the collector: 150 mW; • Fgr - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 120 MHz; • Ukbo - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 20 V; • Uebo - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 3 V; • Ik max - Maximum allowable DC collector current: 50 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 5 μA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 80...150 (1V; 10mA); • Sk - Collector junction capacity: no more than 8 (5V); • Rke us - Saturation resistance between collector and emitter: no more than 24 Ohm; • Ksh - Transistor noise factor: no more than 8 dB (1.6 MHz); • tk - Time constant of the feedback circuit at high frequency: no more than 400 ps. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 15В 50мА 120МГц 150
Transistor KT840B
Transistor KT840B
#16613
 28851 СНГ 3 шт
30 грн.
10+28,50 грн.
50+27 грн.
100+24 грн.
Main technical characteristics of the KT840B transistor: • Transistor structure: npn; • Ркт max - Constant power dissipation of the collector with heat sink: 60 W; • fgr - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: not less than 8 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 750 V; • Uebo max - Maximum emitter-base voltage at a given reverse emitter current and open collector circuit: 5 V; • Iк max - Maximum permissible direct collector current: 6 A; • Ikbo - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 3 mA (750V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 10; • Rke us - Saturation resistance between collector and emitter: no more than 0.75 Ohm. 17.5 TO3 Bipolar DIP NPN — — 60Вт 40pcs 350В 6А 8МГц 10
Transistor KP707V2 (=BUZ90)
Transistor KP707V2 (=BUZ90)
#10738
 22803 СНГ 2 шт
52 грн.
10+49,40 грн.
50+46,80 грн.
100+41,60 грн.
2.5 TO220 Field DIP MOS n-channel 800В 7А 50Вт 100 pieces. — — — —
Transistor MP21D
Transistor MP21D
#10821
 23017 СНГ 2 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistor MP21D germanium alloyed pnp switching low-frequency low-power. Designed for use in switching circuits. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 60В 100мА 0,7МГц 200
Transistor KT209K
Transistor KT209K
#11443
 23571 СНГ 2 шт
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
0.3 TO92 Bipolar DIP PNP — — 350мВт 1000pcs 45В 350мА — 160
Transistor 1T321V (=GT321V)
Transistor 1T321V (=GT321V)
#13543
 25674 СНГ 2 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistors 1T321V germanium conversion structures pnp switching. Designed for use in switching devices. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 50В 200мА 60МГц 200
Transistor GT321V
Transistor GT321V
#13711
 25875 СНГ 2 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistors GT321V germanium conversion structures pnp switching. Designed for use in switching devices. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 50В 200мА 60МГц 200
Transistor KT352A
Transistor KT352A
#13753
 25921 INTEGRAL 2 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
The main technical characteristics of the transistor KT352A: • Transistor structure: pnp; • Рк max - Constant power dissipation of the collector: 300 mW; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 200 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 20 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V; • Ik and max - The maximum allowable collector pulse current: 200 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1 μA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 25... 120; • Sk - Collector junction capacitance: no more than 15 pF; • Rke us - Saturation resistance between collector and emitter: no more than 3 ohms. 0.3 TO92 Bipolar DIP PNP — — 300мВт 500pcs 15В 200мА 200МГц 120
Transistor KT321G
Transistor KT321G
#16477
 28726 СНГ 2 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
KT321G silicon transistors, epitaxial-planar pnp pulse structures. Designed for use in pulse amplifiers and switching devices. 1.5 КТЮ-3-6 Bipolar DIP PNP — — 210мВт 100 pieces. 40В 200мА 60МГц 60
Transistor KT321D
Transistor KT321D
#16478
 28727 СНГ 2 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
KT321D silicon transistors, epitaxial-planar pnp pulse structures. Designed for use in pulse amplifiers and switching devices. 1.5 КТЮ-3-6 Bipolar DIP PNP — — 210мВт 100 pieces. 40В 200мА 60МГц 120
Transistor KT321E
Transistor KT321E
#16479
 28728 СНГ 2 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
KT321E silicon transistors, epitaxial-planar pnp pulse structures. Designed for use in pulse amplifiers and switching devices. 1.5 КТЮ-3-6 Bipolar DIP PNP — — 210мВт 100 pieces. 40В 200мА 60МГц 200