Domestic transistors

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Transistor KT503B
Transistor KT503B
#11437
 23564 СНГ 79 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistors KT503B silicon epitaxial-planar structures npn universal. Designed for use in low-frequency amplifiers, operational and differential amplifiers, converters, pulse devices. 0.3 TO92 Bipolar DIP NPN — — 350мВт 1000pcs 25В 350мА 5МГц 240
Transistor KT626A
Transistor KT626A
#16467
 28714 СНГ 77 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Main technical characteristics of the KT626A transistor: • Transistor structure: pnp; • Рк max - Constant collector power dissipation: 6.5 W; • fgr - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: not less than 75 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 45 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and open collector circuit: 4 V; • Iк max - Maximum permissible direct collector current: 500 mA; • Ikbo - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 10 μA (30V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 40... 260; • Ск - Capacitance of the collector junction: no more than 150 pF; • Rke us - Saturation resistance between collector and emitter: no more than 2 Ohms; • tk - Time constant of the feedback circuit at high frequency: no more than 500 ps. 0.7 TO126 Bipolar DIP PNP — — 6Вт 500pcs 45В 500мА 70МГц 40
Transistor KT837U
Transistor KT837U
#16662
 28901 INTEGRAL 65 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors are silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP PNP — — 30Вт 100 pieces. 40В 7,5A 1МГц 80
Transistor P216G
Transistor P216G
#16926
 29173 СНГ 63 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
Main technical characteristics of the P216G transistor: • Transistor structure: pnp • Рк t max - Continuous dissipated power of the collector with heat sink: 24 W; • fh21э - Limit frequency of the transistor current transfer coefficient for circuits with a common emitter: not less than 0.1 MHz; • Uкбо проб - Collector-base breakdown voltage at a given collector reverse current and open emitter circuit: 50 V; • Uebo prob - Breakdown voltage emitter-base at a given reverse emitter current and open collector circuit: 15 V; • Iк max - Maximum permissible direct collector current: 7.5 A; • Iкбо - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 2 mA; • h21Э - Static current transfer coefficient for the common emitter circuit in large signal mode: >5; • Rke nat - Saturation resistance between collector and emitter: no more than 0.25 Ohm. 10 — Bipolar DIP PNP — — 24Вт 20pcs 50В 7,5A 0,1МГц —
Transistor 1T308A (=GT308A)
Transistor 1T308A (=GT308A)
#6848
 29130 СНГ 61 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
Transistors 1T308A germanium diffusion-alloy structures pnp universal. Designed for use in oscillators, power amplifiers, pulse devices. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 15В 120мА 120МГц 75
Transistor 1T905A
Transistor 1T905A
#14616
 26832 СНГ 60 шт
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
Transistors 1T905A germanium diffusion-alloy structures pnp universal. Designed for use in switching and pulse amplifying devices, in the output stages of low-frequency power amplifiers. The main technical characteristics of the transistor 1T905A: • Structure: pnp • Рк max - Constant power dissipation of the collector: 6 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 30 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 75 V; • Ik max - Maximum allowable DC collector current: 3 A; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 2 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 35...100; • Sk - Collector junction capacitance: no more than 200 pF; • Rke us - Saturation resistance between collector and emitter: no more than 0.17 Ohm; • tk - Time constant of the feedback circuit at high frequency: no more than 300 ps. 3.5 — Bipolar DIP PNP — — 6Вт 50pcs 65В 3А 30МГц 100
Transistor MP101A
Transistor MP101A
#16893
 29140 СНГ 58 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistors MP101B silicon alloy npn amplifying low-frequency with non-standard MP101, MP101B and standard MP101A noise figures at a frequency of 1 kHz. Designed to amplify and switch low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP NPN — — 150мВт 100 pieces. 10В 20мА 0,5МГц 30
Transistor P210V
Transistor P210V
#12951
 25222 СНГ 57 шт
60 грн.
10+57 грн.
50+54 грн.
100+48 грн.
Transistors P210V germanium alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. Are issued in the glass-to-metal case with rigid conclusions. The device type is indicated on the case. The mass of the transistor is not more than 37 g with terminal tips and not more than 48.5 g with a mounting flange. Specifications: aA0.336.483 TU. The main technical characteristics of the P210V transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 45 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 45 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 25 V; • Ik max - Maximum allowable DC collector current: 12 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 15 mA; • h21E - Static current transfer coefficient for common emitter circuit in large signal mode: more than 10. 34 — Bipolar DIP PNP — — 45Вт 10 pieces. 45В 12А — 10
Transistor P306M
Transistor P306M
#15477
 27717 СНГ 57 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors P306M germanium alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. 2.5 TO220 Bipolar DIP PNP — — 10Вт 100 pieces. 60В 400мА 1МГц 25
Transistor P217
Transistor P217
#16929
 29176 СНГ 52 шт
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
Main technical characteristics of the P217 transistor: • Transistor structure: pnp • Рк t max - Continuous dissipated power of the collector with heat sink: 30 W; • fh21э - Limit frequency of the transistor current transfer coefficient for circuits with a common emitter: not less than 0.1 MHz; • Uкбо проб - Collector-base breakdown voltage at a given collector reverse current and open: 60 V; • Uebo prob - Breakdown voltage emitter-base at a given reverse emitter current and open collector circuit: 15 V; • Iк max - Maximum permissible direct collector current: 7.5 A; • Iкбо - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 0.5 mA; • h21э - Static current transfer coefficient of the transistor in small signal mode for circuits with a common emitter: more than 15; • Rke nat - Saturation resistance between collector and emitter: no more than 0.5 Ohm. 11 — Bipolar DIP PNP — — 30Вт 40pcs 60В 7,5A 0,1МГц —
Transistor KT805A with fasteners
Transistor KT805A with fasteners
#9781
 21351 СНГ 50 шт
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
Transistors silicon epitaxial structures npn switching. Designed for use in line-scan output stages, ignition devices for internal combustion engines and other switching devices. Transistors KT805A, KT805B are produced in a glass-to-metal case with hard leads. The device type is indicated on the case. The mass of the transistor is not more than 24 g. Hull type: KTYU-3-20. Specifications: aA0.336.341 TU. 30 kt-282 Bipolar DIP NPN — — 30Вт 20pcs 60В 5А 20МГц 15
Transistor 1T403B (=GT403B)
Transistor 1T403B (=GT403B)
#16886
 29133 СНГ 41 шт
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
Transistor 1T403B germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, converters and DC stabilizers. 3 — Bipolar DIP PNP — — 4Вт 100 pieces. 30В 1,25А — 150
Transistor P201E
Transistor P201E
#16183
 28457 СНГ 40 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
Characteristics of the transistor P201E: PNP structure Uk-e.max. 22V Uk-b.max. 30V Ik.max (permanent) 1.5A Ib.max. (permanent) 0.75A Pk.max. (without heatsink) 1.0W Pk.max. (with heat sink) 10W Switching power, max 30W Ik.obr., at t=+20ºC no more than 0.02-0.4mA Ik.obr., at t=+60ºC no more than 0.2-3.5mA h21e 40..100 fgr. 100kHz Ub-e.us 0.5-2.0V Uk-e.us 0.5-2.5V Temperature range -55..+70°C. 10 — Bipolar DIP PNP — — 10Вт 50pcs 30В 1.5А 0,1МГц 100
Transistor P605
Transistor P605
#16946
 29193 СНГ 40 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
Universal germanium transistor of pnp structure. Designed for use in amplifier, generator and pulse stages of low and high frequency up to 30 MHz. 9.2 — Bipolar DIP PNP — — 3Вт 50pcs 40В 1.5А 30МГц 60
Transistor 2T826A (=KT826A)
Transistor 2T826A (=KT826A)
#9782
 21353 СНГ 39 шт
100 грн.
10+95 грн.
50+90 грн.
100+80 грн.
Transistor silicon mezaplanar structure npn switching. Designed for use in switching devices, in DC voltage converters, high-voltage stabilizers. The 2T826A transistor is available in a metal case with glass insulators and hard leads. The device type is indicated on the case. The 2T826A transistor is produced in the form of undivided crystals with pads on the plate for hybrid integrated circuits. The type of device is indicated on the label. The mass of a transistor in a metal case is not more than 20 g, a crystal is not more than 0.01 g. Hull type: KT-9 (TO-3). Specifications: aA0.339.058 TU. 14 kt-9 Bipolar DIP NPN — — 15Вт 40pcs 700В 1А 6МГц 10
Transistor MP26B
Transistor MP26B
#10813
 23006 СНГ 35 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistor MP26B germanium alloyed pnp universal low-frequency. Designed to amplify and switch low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 200мВт 100 pieces. 70В 150мА — 80
Transistor MP10A
Transistor MP10A
#10818
 23013 СНГ 35 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
Transistor MP10A germanium alloyed npn amplifying low-frequency with non-normalized noise factors. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP NPN — — 150мВт 100 pieces. 30В 20мА 1МГц 30
Transistor KT3102IM
Transistor KT3102IM
#10105
 21844 СНГ 32 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
0.3 TO92 Bipolar DIP NPN — — 250мВт 1000pcs 50В 200мА — 500
Transistor MP111A
Transistor MP111A
#10784
 22972 СНГ 28 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Silicon alloyed npn amplifying low-frequency transistor with a normalized noise figure. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP NPN — — 150мВт 100 pieces. 20В 100мА 0,5МГц 30
Transistor KT382AM
Transistor KT382AM
#14423
 26632 СНГ 28 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
KT382AM transistors are silicon epitaxial planar npn amplifying structures with a normalized noise figure at a frequency of 400 MHz. Designed for use in the input and subsequent stages of high and microwave amplifiers. 0.25 КТ-14 Bipolar SMD NPN — — 100мВт 20pcs 10В 20мА 1.8ГГц 330
Transistor 2T826B (=KT826B)
Transistor 2T826B (=KT826B)
#9783
 21354 СНГ 25 шт
100 грн.
10+95 грн.
50+90 грн.
100+80 грн.
Transistor silicon mezaplanar structure npn switching. Designed for use in switching devices, in DC voltage converters, high-voltage stabilizers. The 2T826B transistor is available in a metal case with glass insulators and hard leads. The device type is indicated on the case. The 2T826B transistor is produced in the form of undivided crystals with pads on the plate for hybrid integrated circuits. The type of device is indicated on the label. The mass of a transistor in a metal case is not more than 20 g, a crystal is not more than 0.01 g. Hull type: KT-9 (TO-3). Specifications: aA0.339.058 TU. 14 kt-9 Bipolar DIP NPN — — 15Вт 40pcs 700В 1А 6МГц 10
Transistor GT403B
Transistor GT403B
#10840
 23037 СНГ 24 шт
17 грн.
10+16,15 грн.
50+15,30 грн.
100+13,60 грн.
Transistor GT403B germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers. 3 — Bipolar DIP PNP — — 4Вт 100 pieces. 30В 1,25А — 150
Transistor KT826A
Transistor KT826A
#13930
 26109 СНГ 24 шт
70 грн.
10+66,50 грн.
50+63 грн.
100+56 грн.
The main technical characteristics of the transistor KT826A: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 15 W; • fgr - Cutoff frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 6 MHz; • Uкer max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 700 V (0.01 kOhm); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V; • Ik max - Maximum allowable DC collector current: 1 A; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 10... 120; • Sk - Collector junction capacitance: no more than 25 pF; • Rke us - Saturation resistance between collector and emitter: no more than 5 ohms. 14 kt-9 Bipolar DIP NPN — — 15Вт 40pcs 700В 1А 6МГц 10
Transistor GT320A
Transistor GT320A
#14473
 26684 СНГ 23 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistors GT320A germanium diffusion-alloy structures pnp switching. Designed for use in high frequency amplifiers and switching devices. 1.8 КТЮ-3-6 Bipolar DIP PNP — — 200мВт 100 pieces. 12В 150мА 80МГц 80
Transistor KT837I
Transistor KT837I
#15469
 27708 INTEGRAL 22 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP PNP — — 30Вт 100 pieces. 40В 7,5A 1МГц 80
Transistor 3P328A-2
Transistor 3P328A-2
#11195
 23319 СНГ 21 шт
35 грн.
10+33,25 грн.
50+31,50 грн.
100+28 грн.
Planar field-effect gallium arsenide transistor with two gates with an n-type channel and an amplifying Schottky barrier with a normalized noise figure at a frequency of 8 GHz. 0.1 КТ-21 Field SMD MOS n-channel 6В 1мА 50мВт 120pcs — — 8ГГц —
Transistor KT837L
Transistor KT837L
#10739
 22804 INTEGRAL 19 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP PNP — — 30Вт 100 pieces. 60В 7,5A 1МГц 40
Transistor P303
Transistor P303
#13778
 25957 СНГ 19 шт
13 грн.
10+12,35 грн.
50+11,70 грн.
100+10,40 грн.
Transistors P303 silicon alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. 10 — Bipolar DIP PNP — — 10Вт 20pcs 65В 500мА 0,1МГц —
Transistor MP21B
Transistor MP21B
#16890
 29137 СНГ 19 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistor MP21B, germanium alloy pnp switching low-frequency low-power. Designed for use in switching circuits. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 40В 100мА 1,5МГц 80
Transistor MP21A
Transistor MP21A
#16884
 29131 СНГ 15 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistor MP21A germanium alloy pnp switching low-frequency low-power. Designed for use in switching circuits. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 35В 100мА 1МГц 150