Domestic transistors

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Transistor P216
Transistor P216
#14713
 26931 СНГ 179 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
Transistors P216 germanium alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. 10 — Bipolar DIP PNP 30Вт 20pcs 40В 7,5A 0,1МГц 20
Transistor KT837E
Transistor KT837E
#10809
 22999 INTEGRAL 178 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP PNP 30Вт 100 pieces. 55В 7,5A 1МГц 150
Transistor P217V
Transistor P217V
#16932
 29179 СНГ 166 шт
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
Main technical characteristics of the P217V transistor: • Transistor structure: pnp • Рк t max - Continuous dissipated power of the collector with heat sink: 24 W; • fh21э - Limit frequency of the transistor current transfer coefficient for circuits with a common emitter: not less than 0.1 MHz; • Uкбо проб - Collector-base breakdown voltage at a given collector reverse current and open emitter circuit: 60 V; • Uebo prob - Breakdown voltage emitter-base at a given reverse emitter current and open collector circuit: 15 V; • Iк max - Maximum permissible direct collector current: 7.5 A; • Iкбо - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 3 mA; • h21э - Static current transfer coefficient of the transistor in small signal mode for circuits with a common emitter: more than 5; • Rke nat - Saturation resistance between collector and emitter: no more than 0.25 Ohm. 11 — Bipolar DIP PNP 24Вт 40pcs 60В 7,5A 0,1МГц —
Transistor GT403A
Transistor GT403A
#10839
 23036 СНГ 159 шт
16 грн.
10+15,20 грн.
50+14,40 грн.
100+12,80 грн.
Transistor GT403A germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers. 3 — Bipolar DIP PNP 4Вт 100 pieces. 30В 1,25А — 60
Transistor P307VM
Transistor P307VM
#14350
 26558 СНГ 158 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Silicon npn transistor for operation in broadcasting receivers and transceiver equipment. 0.5 TO126 Bipolar DIP NPN 250мВт 1000pcs 60В 30мА 20МГц 150
Transistor KT3117A1
Transistor KT3117A1
#9736
 21146 СНГ 154 шт
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
Transistor NPN 60V 0.4A 0.3W 200MHz TO92 (KT-26) 0.4 TO92 Bipolar DIP NPN 500мВт 500pcs 60В 400мА 200МГц 40
Transistor KT342BM
Transistor KT342BM
#13767
 25933 СНГ 153 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
The main technical characteristics of the transistor KT342BM: • Transistor structure: npn; • Рк max - Constant power dissipation of the collector: 250 mW; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 300 MHz; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V; • Ik max - Maximum allowable DC collector current: 50 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.05 μA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 200... 500; • Sk - Collector junction capacitance: no more than 8 pF; • Rke us - Saturation resistance between collector and emitter: no more than 10 Ohm; • tk - Time constant of the feedback circuit at high frequency: no more than 200 ps. 0.3 TO92 Bipolar DIP NPN 250мВт 1000pcs 25В 50мА 300МГц 500
Transistor P201AE
Transistor P201AE
#16182
 28456 СНГ 151 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
Characteristics of the P201AE transistor: PNP structure Uk-e.max. 22V Uk-b.max. 30V Ik.max (permanent) 1.5A Ib.max. (permanent) 0.75A Pk.max. (without heatsink) 1.0W Pk.max. (with heat sink) 10W Switching power, max 30W Ik.obr., at t=+20ºC no more than 0.02-0.4mA Ik.obr., at t=+60ºC no more than 0.2-3.5mA h21e 40..100 fgr. 200kHz Ub-e.us 0.5-2.0V Uk-e.us 0.5-2.5V Temperature range -55..+70°C. 10 — Bipolar DIP PNP 10Вт 50pcs 30В 1.5А 0,2МГц 100
Transistor P417A
Transistor P417A
#11887
 24140 СНГ 139 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Germanium diffusion high-frequency (200 MHz) low power pnp transistors. 1.8 — Bipolar DIP PNP 50мВт 100 pieces. 10В 10мА 200МГц 200
Phototransistor KTF104A
Phototransistor KTF104A
#11586
 23817 СНГ 135 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
Silicon planar npn phototransistor with a photosensitive element area of 0.64 mm2 is produced in a plastic case. 0.2 — Photo — NPN — 200pcs — — — —
Transistor P216D
Transistor P216D
#14718
 26936 СНГ 135 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
The main technical characteristics of the transistor P216D: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 24 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 50 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 7.5 A; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 2 mA; • h21Э - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 15... 30; • Rke us - Saturation resistance between collector and emitter: no more than 0.25 Ohm. 10 — Bipolar DIP PNP 24Вт 20pcs 50В 7,5A 0,1МГц 30
Transistor KT361A
Transistor KT361A
#6843
 24622 СНГ 134 шт
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
Designed for use in high frequency amplifiers. 0.2 КТ-13 Bipolar DIP PNP 150мВт 1000pcs 25В 50мА 250МГц 90
Transistor P306
Transistor P306
#11879
 24132 СНГ 128 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
Transistors P306 germanium alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. 10 — Bipolar DIP PNP 10Вт 40pcs 60В 400мА — 25
Transistor MP111
Transistor MP111
#11391
 23502 СНГ 118 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Silicon alloyed npn amplifying low-frequency transistor with non-normalized noise figure. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP NPN 150мВт 100 pieces. 20В 100мА 0,5МГц 25
Transistor P216B
Transistor P216B
#14715
 26933 СНГ 115 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
The main technical characteristics of the P216B transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 24 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 35 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 7.5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1.5 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: more than 10; • Rke us - Saturation resistance between collector and emitter: no more than 0.25 Ohm. 10 — Bipolar DIP PNP 24Вт 20pcs 30В 7,5A 0,1МГц 10
Transistor MP102
Transistor MP102
#16894
 29141 СНГ 115 шт
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
Transistors MP102 silicon alloy npn amplifying low-frequency with non-standard noise figure at a frequency of 1 kHz. Designed to amplify and switch low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP NPN 100мВт 100 pieces. 10В 20мА 0,5МГц 45
Transistor P210B
Transistor P210B
#12950
 25221 СНГ 110 шт
60 грн.
10+57 грн.
50+54 грн.
100+48 грн.
P210B Transistors P210B germanium alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. Are issued in the glass-to-metal case with rigid conclusions. The device type is indicated on the case. The mass of the transistor is not more than 37 g with terminal tips and not more than 48.5 g with a mounting flange. Specifications: aA0.336.483 TU. The main technical characteristics of the P210B transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 45 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukeo samples - Breakdown voltage collector-emitter at a given collector current and base open circuit: 65 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 25 V; • Ik max - Maximum allowable DC collector current: 12 A. • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 15 mA; • h21E - Static current transfer coefficient for a common emitter circuit in large signal mode: more than 10 34 — Bipolar DIP PNP 45Вт 10 pieces. 65В 12А — 10
Transistor assembly 2TS393B-1
Transistor assembly 2TS393B-1
#11638
 23868 СНГ 104 шт
22 грн.
10+20,90 грн.
50+19,80 грн.
100+17,60 грн.
Transistor assemblies consisting of two silicon epitaxial-planar structures of pnp amplifying transistors on the same chip with separate leads. Designed for use in broadband balanced, differential and operational amplifiers and other stages of hermetically sealed equipment, which require the identity of the parameters of two transistors. 2 — Bipolar SMD PNPx2 20мВт 200pcs 15В 20мА 500МГц 140
Transistor KT807A
Transistor KT807A
#14151
 26345 СНГ 104 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
Transistors silicon mezaplanarny structures npn universal. Designed for use in horizontal and vertical scan generators, low-frequency amplifiers, secondary power supplies. 2.5 — Bipolar DIP NPN 10Вт 20pcs 100В 500мА 5МГц 45
Transistor 1T308B (=GT308B)
Transistor 1T308B (=GT308B)
#6851
 24599 СНГ 98 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
The main technical characteristics of the transistor 1T308B: • Structure: pnp • Рк max - Constant power dissipation of the collector: 150 mW; • Fgr - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 120 MHz; • Ukbo - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 20 V; • Uebo - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 3 V; • Ik max - Maximum allowable DC collector current: 50 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 5 μA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 50...120 (1V; 10mA); • Sk - Collector junction capacity: no more than 8 (5V); • Rke us - Saturation resistance between collector and emitter: no more than 24 Ohm; • Ksh - Transistor noise factor: not standardized; • tk - Time constant of the feedback circuit at high frequency: no more than 400 ps. 2 — Bipolar DIP PNP 150мВт 100 pieces. 20В 120мА 120МГц 120
Transistor MP10
Transistor MP10
#13698
 25858 СНГ 98 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
Transistor MP10 germanium alloyed npn amplifying low-frequency with non-normalized noise figure at a frequency of 1 kHz. Designed to amplify low frequency signals. The main technical characteristics of the MP10 transistor: • Transistor structure: npn • Рк max - Constant power dissipation of the collector: 150 mW; • fh21b - The limiting frequency of the transistor current transfer coefficient for circuits with a common emitter and a common base: at least 1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 15 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 20 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 30 µA; • h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter and a common base, respectively: 10...30; • Sk - Collector junction capacitance: no more than 60 pF; • tk - Time constant of the feedback circuit at high frequency: no more than 5000 ps; • Ksh - Transistor noise figure: no more than 10 dB at a frequency of 1 kHz. 1.8 КТЮ-3-3 Bipolar DIP NPN 150мВт 100 pieces. 15В 20мА 1МГц 30
Transistor KT807B
Transistor KT807B
#11375
 23486 СНГ 94 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
Transistor silicon mezaplanar structure npn universal. Designed for use in horizontal and vertical scan generators, low-frequency amplifiers, secondary power supplies. 2.5 — Bipolar DIP NPN 10Вт 100 pieces. 100В 500мА 5МГц 100
Transistor KT3107K
Transistor KT3107K
#6836
 22261 СНГ 92 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
0.3 TO92 Bipolar DIP PNP 300мВт 1000pcs 25В 200мА 200МГц 220
Transistor MP42A
Transistor MP42A
#12255
 24637 СНГ 87 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
The main technical characteristics of the MP42A transistor: • Transistor structure: pnp • Рк max - Constant power dissipation of the collector: 200 mW; • fh21b - The limiting frequency of the transistor current transfer coefficient for circuits with a common emitter and a common base: at least 1 MHz; • Uкеr samples - Breakdown voltage collector-emitter at a given collector current and a given (final) resistance in the base-emitter circuit: 15 V; • Ik and max - The maximum allowable collector pulse current: 200 mA; • h21e - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 30...50; • Rke us - Saturation resistance between collector and emitter: no more than 20 ohms. 1.6 КТЮ-3-6 Bipolar DIP PNP 200мВт 100 pieces. 15В 200мА 1МГц 50
Transistor P213B
Transistor P213B
#14711
 26929 СНГ 87 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
The main technical characteristics of the P213B transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 10 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 45 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 10 V; • Ik max - Maximum allowable DC collector current: 5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: more than 40; • Rke us - Saturation resistance between collector and emitter: no more than 1.25 Ohm. 10 — Bipolar DIP PNP 10Вт 20pcs 30В 5А 0,15МГц 40
Transistor MP21G
Transistor MP21G
#16150
 28392 СНГ 86 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistor MP21G germanium alloyed pnp switching low-frequency low-power. Designed for use in switching circuits. 1.8 КТЮ-3-3 Bipolar DIP PNP 150мВт 100 pieces. 60В 100мА 1МГц 80
Transistor KT818V
Transistor KT818V
#10791
 22980 СНГ 85 шт
18 грн.
10+17,10 грн.
50+16,20 грн.
100+14,40 грн.
Transistor silicon mesaepitaxial-planar structure pnp switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP PNP 60Вт 100 pieces. 70В 10А 3МГц 15
Transistor MP111B
Transistor MP111B
#14145
 26336 СНГ 84 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Silicon alloyed npn amplifying low-frequency transistor with non-normalized noise figure. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP NPN 150мВт 100 pieces. 20В 100мА 1МГц 45
Transistor P417
Transistor P417
#16885
 29132 СНГ 82 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Germanium diffused high-frequency (200 MHz) low-power pnp transistors. 1.8 — Bipolar DIP PNP 50мВт 100 pieces. 10В 10мА 200МГц 100
Transistor KT313A1
Transistor KT313A1
#11374
 23485 СНГ 80 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
Silicon transistors, epitaxial-planar structures pnp universal. Designed for use in high frequency amplifiers and switching devices. 0.3 TO92 Bipolar DIP PNP 300мВт 1000pcs 50В 350мА 200МГц 120