Domestic transistors

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Transistor KT361B
Transistor KT361B
#6844
 23551 СНГ 856 шт
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
Designed for use in high frequency amplifiers. 0.2 КТ-13 Bipolar DIP PNP 150мВт 1000pcs 20В 50мА 250МГц 350
Transistor KT503D
Transistor KT503D
#10351
 22339 СНГ 800 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistors KT503D silicon epitaxial-planar structures npn universal. Designed for use in low-frequency amplifiers, operational and differential amplifiers, converters, pulse devices. 0.3 TO92 Bipolar DIP NPN 350мВт 1000pcs 60В 350мА 5МГц 120
Transistor KT3115A-2
Transistor KT3115A-2
#10726
 22783 СНГ 775 шт
30 грн.
10+28,50 грн.
50+27 грн.
100+24 грн.
Designed for use in the input and subsequent stages of low-noise microwave amplifiers. 0.1 КТ-22 Bipolar SMD NPN 75мВт 200pcs — 8,5мА 5ГГц 110
Transistor MP104
Transistor MP104
#13968
 26148 СНГ 750 шт
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
Transistors MP104 are silicon alloyed pnp amplifying low-frequency ones with non-normalized noise figure. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP 150мВт 100 pieces. 60В 10мА 0,1МГц 10
Transistor KT604BM
Transistor KT604BM
#10321
 22271 СНГ 741 шт
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
KT604BM Transistors silicon mezaplanarny structures npn. 1 TO126 Bipolar DIP NPN 3Вт 200pcs 250В 200мА 40МГц 120
Transistor KT361G1
Transistor KT361G1
#10352
 22340 СНГ 680 шт
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
Designed for use in high frequency amplifiers. 0.2 КТ-13 Bipolar DIP PNP 150мВт 1000pcs 35В 50мА 250МГц 350
Transistor MP13
Transistor MP13
#14471
 26682 СНГ 645 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
Transistors MP13 germanium alloy pnp universal low-frequency low-power. Designed for amplification of small low frequency signals, amplification, switching, pulse shaping, applications in ferrite transistor cells. The main technical characteristics of the MP13 transistor: • Transistor structure: pnp • Рк max - Constant power dissipation of the collector: 150 mW; • fh21b - The limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 0.5 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 15 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 20 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 200 µA; • h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter and a common base, respectively: 25...55; • Sk - Collector junction capacitance: no more than 60 pF; • Ksh - Transistor noise figure: no more than 10 dB at a frequency of 1 kHz. 1.8 КТЮ-3-6 Bipolar DIP PNP 150мВт 100 pieces. 15В 20мА 0,5МГц 12
Transistor KT315E
Transistor KT315E
#6840
 23555 СНГ 638 шт
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
Transistors silicon epitaxial-planar structures npn amplifying. Designed for use in high, intermediate and low frequency amplifiers. 0.25 КТ-13 Bipolar DIP NPN 150мВт 800 pcs. 35В 100мА 250МГц 350
Transistor KT645A
Transistor KT645A
#10316
 22265 INTEGRAL 628 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
0.3 TO92 Bipolar DIP NPN 500мВт 1000pcs 50В 300мА — —
Transistor KT3130A9 (=ВСW71)
Transistor KT3130A9 (=ВСW71)
#10107
 21846 INTEGRAL 626 шт
2.50 грн.
10+2,37 грн.
50+2,25 грн.
100+2 грн.
0.1 SOT23 Bipolar SMD NPN 100мВт 1000pcs 40В 100мА 150МГц 250
Transistor P214V
Transistor P214V
#12366
 24701 СНГ 584 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
The main technical characteristics of the P214V transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 10 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 60 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 10 V; • Ik max - Maximum allowable DC collector current: 5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1.5 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: more than 20; • Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm. 10 — Bipolar DIP PNP 10Вт 50pcs 55В 5А — —
Transistor MP15
Transistor MP15
#3476
 23010 СНГ 533 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistor MP15 germanium alloy pnp universal low-frequency low-power. Designed for small low frequency signal amplification, amplification, switching, pulse shaping 1.8 КТЮ-3-3 Bipolar DIP PNP 150мВт 100 pieces. 15В 20мА 2МГц 60
Transistor assembly 2TC393A-1H
Transistor assembly 2TC393A-1H
#11806
 24035 СНГ 492 шт
24 грн.
10+22,80 грн.
50+21,60 грн.
100+19,20 грн.
Transistor assemblies consisting of two silicon epitaxial-planar structures of pnp amplifying transistors on the same chip with separate leads. Designed for use in broadband balanced, differential and operational amplifiers and other stages of hermetically sealed equipment, which require the identity of the parameters of two transistors. 2 — Bipolar SMD PNPx2 20мВт 150pcs 10В 20мА 500МГц 180
Transistor KT502A
Transistor KT502A
#10350
 22338 СНГ 486 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistors KT502A silicon epitaxial-planar structures pnp universal. Designed for use in low-frequency amplifiers, operational, differential and pulse amplifiers, converters 0.3 TO92 Bipolar DIP PNP 350мВт 1000pcs 25В 350мА 5МГц 120
Transistor MP25
Transistor MP25
#10814
 23007 СНГ 457 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistor MP25 germanium alloyed pnp universal low-frequency. Designed to amplify and switch low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP 200мВт 100 pieces. 40В 150мА — 25
Transistor KT805AM
Transistor KT805AM
#10782
 22970 СНГ 435 шт
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
Transistors silicon epitaxial structures npn switching. Designed for use in line-scan output stages, ignition devices for internal combustion engines and other switching devices. 2.5 TO220 Bipolar DIP NPN 30Вт 100 pieces. 60В 5А 20МГц 15
Transistor KT209E
Transistor KT209E
#10313
 22262 INTEGRAL 425 шт
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
0.3 TO92 Bipolar DIP PNP 200мВт 1000pcs 30В 300мА — 240
Transistor KT680A
Transistor KT680A
#14422
 26631 СНГ 422 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistor KT680A silicon epitaxial-planar structure npn amplifying. Designed for use in low frequency amplifiers. 0.3 TO92 Bipolar DIP NPN 350мВт 1000pcs 25В 600мА 120МГц 300
Transistor KT6114V (=SS8050)
Transistor KT6114V (=SS8050)
#10102
 21840 INTEGRAL 413 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
0.3 TO92 Bipolar DIP NPN 1Вт 1000pcs 25В 1.5А 100МГц 80
Transistor KT520A (=MPSA42)
Transistor KT520A (=MPSA42)
#10101
 21839 INTEGRAL 409 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
0.3 TO92 Bipolar DIP NPN 625мВт 1000pcs 300В 500мА 50МГц 40
Transistor MP103
Transistor MP103
#13682
 25841 СНГ 398 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistor MP103 germanium alloyed npn amplifying low-frequency with non-normalized noise factors. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP NPN 100мВт 100 pieces. 10В 100мА 1МГц 45
Transistor KT6115V (=SS8550)
Transistor KT6115V (=SS8550)
#10106
 21845 INTEGRAL 397 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
0.3 TO92 Bipolar DIP PNP 1Вт 1000pcs 25В 1.5А 100МГц 300
Transistor KT817B
Transistor KT817B
#12236
 24615 СНГ 389 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistor KT817B silicon mesa-epitaxial-planar structure npn amplifying. 0.7 TO126 Bipolar DIP NPN 25Вт 200pcs 45В 3А 3МГц 40
Transistor KT853V
Transistor KT853V
#13954
 26134 СНГ 377 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors KT853V silicon planar structures pnp switching. Designed for use in amplifiers and switching devices. The main technical characteristics of the transistor KT853V: • Transistor structure: pnp; • Рк t max - Constant power dissipation of the collector with a heat sink: 60 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 7 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 60 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V; • Ik max - Maximum allowable DC collector current: 8 A; • Ik and max - The maximum allowable collector pulse current: 12 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 200 μA (60V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 750; • Sk - Collector junction capacitance: no more than 120 pF; • Rke us - Saturation resistance between collector and emitter: no more than 0.66 Ohm; • toff - Turn-off time:: no more than 3300 ns 2 TO220 Bipolar DIP PNP 60Вт 100 pieces. 60В 8А 7МГц 750
Transistor MP106
Transistor MP106
#13536
 25664 СНГ 356 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistors MP106 silicon alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP 150мВт 100 pieces. 15В 10мА 0,5МГц 100
Transistor KT3101AM
Transistor KT3101AM
#14485
 26697 СНГ 352 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
KT3101A-2 transistors are silicon epitaxial-planar npn amplifying structures with a normalized noise figure at frequencies of 1 and 2.25 GHz. Designed for use in the input and subsequent stages of microwave amplifiers. The main technical characteristics of the transistor KT3101AM: • Transistor structure: npn • Рк max - Constant power dissipation of the collector: 100 mW; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 4000 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 15 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 2.5 V; • Ik max - Maximum allowable DC collector current: 20 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 0.5 μA (15V); • h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter: 35...300; • Sk - Collector junction capacitance: no more than 1.5 pF; • Ksh - Transistor noise figure: no more than 4.5 dB at a frequency of 2.25 GHz • tk - Time constant of the feedback circuit at high frequency: no more than 10 ps. 0.25 КТ-14 Bipolar SMD NPN 100мВт 20pcs 15В 20мА 4ГГц 300
Transistor MP116
Transistor MP116
#11961
 24250 СНГ 339 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistors MP116 silicon alloyed pnp amplifying low-frequency with non-normalized noise factor. Designed to amplify low frequency signals. 1.5 КТЮ-3-6 Bipolar DIP PNP 150мВт 100 pieces. 15В 10мА 0,5МГц 100
Transistor P216A
Transistor P216A
#14714
 26932 СНГ 327 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
The main technical characteristics of the P216A transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 30 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 40 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 7.5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.5 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 20... 80; • Rke us - Saturation resistance between collector and emitter: no more than 0.2 Ohm. 10 — Bipolar DIP PNP 30Вт 20pcs 40В 7,5A 0,1МГц 80
Transistor P605A
Transistor P605A
#11215
 23349 СНГ 326 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
Transistor germanium structure pnp universal. Designed for use in amplifying, generator and pulse stages of low and high frequencies up to 30 MHz. 9.2 — Bipolar DIP PNP 3Вт 50pcs 40В 1.5А 30МГц 120
Transistor MP103A
Transistor MP103A
#13712
 25876 СНГ 326 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistor MP103A germanium alloyed npn amplifying low-frequency with non-normalized noise factors. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP NPN 100мВт 100 pieces. 10В 100мА 1МГц 30