Domestic transistors

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Transistor case type Transistor type Mounting type Structure Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain
Phototransistor FT-8 gr.A
Phototransistor FT-8 gr.A
#12174
 24467 СНГ 317 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
Designed for use as receivers and sensors of infrared radiation as part of optoelectronic equipment, systems of photoelectric automation and non-contact temperature measurement, computer and measuring equipment. The main technical parameters of the phototransistor FT-8: • Photosensitive element size: diameter 0.5 mm; • Wavelength of maximum spectral distribution of photosensitivity: 0.9...0.95 µm; • Rated operating voltage: 5 V; • Dark current: no more than 1 μA; • Current photosensitivity: not less than 0.2 µA/lx. 0.3 — Photo DIP — — 400pcs — — — —
Transistor 2T903B (=KT903B)
Transistor 2T903B (=KT903B)
#12229
 24608 СНГ 311 шт
40 грн.
10+38 грн.
50+36 грн.
100+32 грн.
The main technical characteristics of the transistor 2T903B: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 30 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: more than 120 MHz; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 4 V; • Ik max - Maximum allowable DC collector current: 3 A; • Ik and max - The maximum allowable collector pulse current: 10 A; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 40... 180; • Sk - Collector junction capacitance: no more than 180 pF; • Rke us - Saturation resistance between collector and emitter: no more than 1 ohm; • Рout - Transistor output power: not less than 10 W at 50 MHz. 22 КТЮ-3-3 Bipolar DIP NPN 30Вт 20pcs 60В 10А — 180
Transistor KT3128A
Transistor KT3128A
#10341
 22328 СНГ 300 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Designed for use in TV channel selectors with automatic gain control. 0.4 КТ-1 Bipolar DIP PNP 100мВт 500pcs 20В 20мА 800МГц 150
Transistor KT3107Zh
Transistor KT3107Zh
#10104
 21843 СНГ 297 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
0.3 TO92 Bipolar DIP PNP 300мВт 1000pcs 25В 200мА 200МГц 450
Transistor 2T208M1 (=KT208M)
Transistor 2T208M1 (=KT208M)
#10315
 22264 СНГ 296 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
The 2T208M1 transistor is used to amplify, generate and convert electrical signals. 0.3 TO92 Bipolar DIP PNP 200мВт 1000pcs 60В 300мА — 40
Transistor MP114
Transistor MP114
#13683
 25842 СНГ 295 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistors MP114 silicon alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP 150мВт 100 pieces. 60В 10мА 0,1МГц 10
Transistor MP26
Transistor MP26
#3441
 23003 СНГ 278 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistor MP26 germanium alloyed pnp universal low-frequency. Designed to amplify and switch low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP 200мВт 100 pieces. 70В 150мА — 25
Transistor P306A
Transistor P306A
#14717
 26935 СНГ 266 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
Transistors P306A germanium alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. 10 — Bipolar DIP PNP 10Вт 40pcs 80В 400мА — 35
Transistor KT837Zh
Transistor KT837Zh
#15472
 27711 INTEGRAL 266 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP PNP 30Вт 100 pieces. 40В 7,5A 1МГц 80
Transistor P304
Transistor P304
#13928
 26107 СНГ 259 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
Transistors P304 silicon alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. 10 — Bipolar DIP PNP 10Вт 50pcs 50В 500мА 0,05МГц —
Transistor MP14B
Transistor MP14B
#10811
 23001 СНГ 258 шт
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
Transistor MP14B germanium alloyed pnp universal low-frequency low-power. 1.8 КТЮ-3-3 Bipolar DIP PNP 150мВт 100 pieces. 30В 20мА 1МГц 60
Transistor P302
Transistor P302
#16928
 29175 СНГ 257 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
Transistors P302 silicon alloy structure pnp universal. Intended for use in switching devices, output stages of low-frequency amplifiers, DC-DC converters . 10 — Bipolar DIP PNP 7Вт 50pcs 30В 500мА 0,2МГц 10
Transistor MP40A
Transistor MP40A
#3440
 24735 СНГ 252 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistors MP40A germanium alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. Are issued in the glass-to-metal case with flexible conclusions. 1.8 КТЮ-3-6 Bipolar DIP PNP 150мВт 100 pieces. 30В 30мА 1МГц 40
Transistor P213
Transistor P213
#14710
 26928 СНГ 252 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
The main technical characteristics of the transistor P213: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 11.5 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 45 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.15 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 20...50; • Rke us - Saturation resistance between collector and emitter: no more than 0.16 Ohm. 10 — Bipolar DIP PNP 11,5Вт 20pcs 40В 5А 0,15МГц 50
Transistor MP105
Transistor MP105
#13969
 26149 СНГ 241 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistors MP105 silicon alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP 150мВт 100 pieces. 30В 10мА 0,1МГц 45
Transistor P214
Transistor P214
#14712
 26930 СНГ 230 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
The main technical characteristics of the P214 transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 10 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 60 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.3 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 20...60; • Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm. 10 — Bipolar DIP PNP 10Вт 20pcs 55В 5А 0,15МГц 60
Transistor KT3130G9
Transistor KT3130G9
#14527
 26743 INTEGRAL 229 шт
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
0.1 SOT23 Bipolar SMD NPN 100мВт 1000pcs 15В 100мА 150МГц 1000
Transistor GT346A
Transistor GT346A
#12505
 24839 СНГ 227 шт
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
GT346A transistors are amplifying germanium epitaxial-planar structures pnp with a normalized noise figure at frequencies of 800 and 200 MHz. Designed for use in television channel selectors of meter and decimeter wavelength ranges with automatic gain control. 0.4 КТ-1 Bipolar DIP PNP 50мВт 1000pcs 15В 10мА 700МГц 150
Transistor P216V
Transistor P216V
#14716
 26934 СНГ 227 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
The main technical characteristics of the P216V transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 24 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 35 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 7.5 A; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 2 mA; • h21Э - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: more than 30; • Rke us - Saturation resistance between collector and emitter: no more than 0.25 Ohm. 10 — Bipolar DIP PNP 24Вт 20pcs 30В 7,5A 0,1МГц 30
Transistor KT801B
Transistor KT801B
#3436
 21835 СНГ 220 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
NPN structure Max. e.g. k-b at a given reverse current to and open circuit e. (Ukbo max), V 60 Max. e.g. k-e at a given current to and a given resist. in the B-e circuit. (Uker max), V 60 The maximum allowable current to (Ik max, A) 2 Static current transfer coefficient h21e min 30 Limiting frequency of the current transfer coefficient fgr, MHz 10.00 Maximum dissipated power k (Pk, W) 5 Housing KTYu-3-9 3.5 КТЮ-3-9 Bipolar DIP NPN 5Вт 25pcs 60В 2А 10МГц 30
Transistor MP113A
Transistor MP113A
#13537
 25665 СНГ 218 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistor MP113A germanium alloyed npn amplifying low-frequency with non-normalized noise factors. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP NPN 150мВт 100 pieces. 10В 100мА 1МГц 120
Transistor P214B
Transistor P214B
#12365
 24700 СНГ 211 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
The main technical characteristics of the P214B transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 11.5 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 60 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.15 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 20...150; • Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm. 10 — Bipolar DIP PNP 11,5Вт 20pcs 55В 5А 0,15МГц 150
Transistor KT209B
Transistor KT209B
#11446
 23574 СНГ 210 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
0.3 TO92 Bipolar DIP PNP 350мВт 1000pcs 15В 350мА — 120
Transistor KT361K-2
Transistor KT361K-2
#11373
 23484 INTEGRAL 209 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
0.3 TO92 Bipolar DIP PNP 150мВт 1000pcs 60В 100мА 250МГц 350
Transistor KT3102AM
Transistor KT3102AM
#10317
 22267 СНГ 205 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
0.3 TO92 Bipolar DIP NPN 250мВт 1000pcs 50В 200мА — 250
Transistor KT857A
Transistor KT857A
#13955
 26135 СНГ 192 шт
17 грн.
10+16,15 грн.
50+15,30 грн.
100+13,60 грн.
Transistor KT857A silicon epitaxial-planar structure npn switching. Designed for use in amplifiers and switching devices. The main technical characteristics of the transistor KT857A: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 60 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: more than 10 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 250 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 6 V; • Ik max - Maximum allowable DC collector current: 7 A; • Ik and max - The maximum allowable collector pulse current: 10 A; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and open emitter output: no more than 5 mA (250V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 7.5; • Rke us - Saturation resistance between collector and emitter: no more than 0.33 Ohm; • tras - Resorption time: no more than 2500 ns 2 TO220 Bipolar DIP NPN 60Вт 100 pieces. 250В 7А 10МГц 10
Tyranzistor KT681A
Tyranzistor KT681A
#10110
 21849 СНГ 186 шт
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
0.3 TO92 Bipolar DIP PNP 350мВт 1000pcs 25В 600мА 120МГц 85
Transistor KT818A
Transistor KT818A
#10793
 22982 СНГ 185 шт
14 грн.
10+13,30 грн.
50+12,60 грн.
100+11,20 грн.
Transistor silicon mesaepitaxial-planar structure pnp switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP PNP 60Вт 100 pieces. 40В 10А 3МГц 15
Transistor MP113
Transistor MP113
#13681
 25840 СНГ 185 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistor MP113 germanium alloyed npn amplifying low-frequency with non-normalized noise factors. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP NPN 150мВт 100 pieces. 10В 100мА 1МГц 45
Transistor MP25B
Transistor MP25B
#10816
 23009 СНГ 182 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistor MP25B germanium alloyed pnp universal low-frequency. Designed to amplify and switch low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP 200мВт 100 pieces. 40В 150мА — 80