Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Appointment | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type |
|---|
Chip KR590KN1
#9805
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21388 | СНГ | 276 шт |
14 грн.
|
|
The KR590KN1 microcircuit is an eight-channel switch (rMOS) with a decoder and is designed for switching voltages from - 5 to + 5 V, for multi-channel digital information processing systems, in analog-to-digital converters. The ICs are input compatible with TTL circuits, have an enable command, input overvoltage protection, zero residual voltage, BCD controlled, select 1 of 8 channels. | 1.1 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | 90pcs | — | — | — | — | — | — | ||||||||
Chip KM155LR4
#986
|
21341 | СНГ | 272 шт |
4 грн.
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Integrated circuit of the TTL series. KM155LR4 microcircuits are a logical element 4-4I-2OR-NOT with the possibility of expansion by OR. Contains 22 integral elements. Housing type 201.14-1, weight no more than 1 g. Maximum permissible operating modes: - Supply voltage .......... 4.75 - 5.25 V - Low level input voltage .......... - High level input voltage .......... > 2.4V - Low level input current .......... - High level output current .......... - Load capacity .......... - The duration of the front and cut of the input pulse - Ambient temperature: - K155 .......... -10 + 70 °С - KM155 ......... - 45 + 85 ° С | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | 100 pieces. | — | — | — | — | — | — | ||||||||
Chip KR580VK38
#7364
|
22203 | СНГ | 270 шт |
10 грн.
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System controller. | 4 | DIP28 | — | — | DIP | — | — | — | — | Microcontrollers | — | — | — | — | 60pcs | — | — | — | — | — | — | ||||||||
Transistor P306A
#14717
|
26935 | СНГ | 266 шт |
15 грн.
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Transistors P306A germanium alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. | 10 | — | — | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 10Вт | 40pcs | 80В | 400мА | — | 35 | — | — | ||||||||
Transistor KT837Zh
#15472
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27711 | INTEGRAL | 266 шт |
12 грн.
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Transistors silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. | 2.5 | — | TO220 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 30Вт | 100 pieces. | 40В | 7,5A | 1МГц | 80 | — | — | ||||||||
Chip K176LP2
#8381
|
21878 | СНГ | 265 шт |
6 грн.
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4 logical elements exclusive OR. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | 100 pieces. | — | — | — | — | — | — | ||||||||
Diode bridge 2W10
#3381
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21806 | GALAXY ELECTRICAL | 263 шт |
4 грн.
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0.9 | — | — | — | DIP | — | 1000V | 2A | — | — | — | — | — | — | 1000pcs | — | — | — | — | — | — | |||||||||
Chip KR145IR2
#14435
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26645 | СНГ | 260 шт |
20 грн.
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Dynamic shift register 1024/1008 bits. | 2.8 | DIP24 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | 100 pieces. | — | — | — | — | — | — | ||||||||
Transistor P304
#13928
|
26107 | СНГ | 259 шт |
15 грн.
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Transistors P304 silicon alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. | 10 | — | — | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 10Вт | 50pcs | 50В | 500мА | 0,05МГц | — | — | — | ||||||||
Transistor MP14B
#10811
|
23001 | СНГ | 258 шт |
7 грн.
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Transistor MP14B germanium alloyed pnp universal low-frequency low-power. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 150мВт | 100 pieces. | 30В | 20мА | 1МГц | 60 | — | — | ||||||||
Transistor P302
#16928
|
29175 | СНГ | 257 шт |
15 грн.
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Transistors P302 silicon alloy structure pnp universal. Intended for use in switching devices, output stages of low-frequency amplifiers, DC-DC converters . | 10 | — | — | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 7Вт | 50pcs | 30В | 500мА | 0,2МГц | 10 | — | — | ||||||||
Chip K131LR1
#7431
|
22185 | СНГ | 256 шт |
6 грн.
|
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2 logic elements 2-2AND-2OR-NOT, one expandable by OR. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | 100 pieces. | — | — | — | — | — | — | ||||||||
Chip K511LA3
#815
|
25742 | СНГ | 253 шт |
7 грн.
|
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Two 4I-NOT gates with passive output and AND expansion | 1.2 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | 100 pieces. | — | — | — | — | — | — | ||||||||
Thyristor KU112A
#12176
|
24469 | СНГ | 253 шт |
10 грн.
|
Silicon thyristors KU112A, triode, non-lockable. Designed for use as switching elements. | 0.7 | — | — | — | DIP | TO-126 | 30V | — | 6A | — | — | — | — | — | 200pcs | — | — | — | — | — | — | |||||||||
Transistor MP40A
#3440
|
24735 | СНГ | 252 шт |
5 грн.
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Transistors MP40A germanium alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. Are issued in the glass-to-metal case with flexible conclusions. | 1.8 | — | КТЮ-3-6 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 150мВт | 100 pieces. | 30В | 30мА | 1МГц | 40 | — | — | ||||||||
Transistor P213
#14710
|
26928 | СНГ | 252 шт |
15 грн.
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The main technical characteristics of the transistor P213: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 11.5 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 45 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.15 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 20...50; • Rke us - Saturation resistance between collector and emitter: no more than 0.16 Ohm. | 10 | — | — | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 11,5Вт | 20pcs | 40В | 5А | 0,15МГц | 50 | — | — | ||||||||
| 21430 | СНГ | 250 шт |
6 грн.
|
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6 logical NOT gates. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | 100 pieces. | — | — | — | — | — | — | |||||||||
Zener diode 1N4727A (3V)
#8708
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20504 | SEMTECH ELECTRONICS | 250 шт |
2 грн.
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0.2 | — | — | — | DIP | — | — | — | — | — | — | — | — | 1Вт | 500pcs | — | — | — | — | 3V0 | DO-41 | |||||||||
| 20457 | SEMTECH ELECTRONICS | 250 шт |
2 грн.
|
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0.2 | — | — | — | DIP | — | — | — | — | — | — | — | — | 1Вт | 500pcs | — | — | — | — | 36V | DO-41 | ||||||||||
Transistor AO3400A
#16776
|
29021 | ALPHA OMEGA SEMICONDUCTOR | 250 шт |
4 грн.
|
|
0.1 | — | SOT23 | Field | SMD | — | — | — | — | — | MOS n-channel | 30В | 5.7А | 1.4Вт | 3000pcs | — | — | — | — | — | — | |||||||||
| 29102 | TEXAS INSTRUMENTS | 250 шт |
25 грн.
|
|
0.12 | SC-70-6(SOT-363) | — | — | SMD | — | — | — | — | Logics | — | — | — | — | 250pcs | — | — | — | — | — | — | ||||||||||
| 20448 | SEMTECH ELECTRONICS | 248 шт |
2 грн.
|
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0.2 | — | — | — | DIP | — | — | — | — | — | — | — | — | 1Вт | 500pcs | — | — | — | — | 15V | DO-41 | ||||||||||
| 20436 | SEMTECH ELECTRONICS | 245 шт |
2 грн.
|
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0.2 | — | — | — | DIP | — | — | — | — | — | — | — | — | 1Вт | 500pcs | — | — | — | — | 4V7 | DO-41 | ||||||||||
| 20447 | SEMTECH ELECTRONICS | 243 шт |
2 грн.
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0.2 | — | — | — | DIP | — | — | — | — | — | — | — | — | 1Вт | 500pcs | — | — | — | — | 13V | DO-41 | ||||||||||
Chip KR1008VZH7A
#14335
|
26542 | СНГ | 243 шт |
6 грн.
|
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Electronic dialer for telephones with pulse dialing and remembering the last number. | 2.5 | DIP22 | — | — | DIP | — | — | — | — | Telephony | — | — | — | — | 64pcs | — | — | — | — | — | — | ||||||||
BSS84(PD)
#6253
|
20602 | NXP | 242 шт |
2 грн.
|
|
0.1 | — | SOT23 | Field | SMD | — | — | — | — | — | MOS p-channel | 50В | 130мА | 250мВт | 3000pcs | — | — | — | — | — | — | |||||||||
| 21684 | СНГ | 242 шт |
6 грн.
|
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Fast carry block for the arithmetic node. | 1 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | 90pcs | — | — | — | — | — | — | |||||||||
Transistor MP105
#13969
|
26149 | СНГ | 241 шт |
5 грн.
|
|
Transistors MP105 silicon alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 150мВт | 100 pieces. | 30В | 10мА | 0,1МГц | 45 | — | — | ||||||||
| 20439 | SEMTECH ELECTRONICS | 240 шт |
2 грн.
|
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0.2 | — | — | — | DIP | — | — | — | — | — | — | — | — | 1Вт | 500pcs | — | — | — | — | 6V2 | DO-41 | ||||||||||
Chip P80C51FA
#9768
|
21311 | INTEL | 240 шт |
78 грн.
|
|
5.7 | DIP40 | — | — | DIP | — | — | — | — | Microcontrollers | — | — | — | — | 10 pieces. | — | — | — | — | — | — |
