Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Diode design |
|---|
Chip KR531LA4 (=SN74S10)
#5649
|
22276 | СНГ | 322 шт |
6 грн.
|
|
Three logical elements 3I-NOT. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Chip K561LA9
#5644
|
22144 | СНГ | 317 шт |
6 грн.
|
|
Three three-input elements AND-NOT. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Phototransistor FT-8 gr.A
#12174
|
24467 | СНГ | 317 шт |
8 грн.
|
|
Designed for use as receivers and sensors of infrared radiation as part of optoelectronic equipment, systems of photoelectric automation and non-contact temperature measurement, computer and measuring equipment. The main technical parameters of the phototransistor FT-8: • Photosensitive element size: diameter 0.5 mm; • Wavelength of maximum spectral distribution of photosensitivity: 0.9...0.95 µm; • Rated operating voltage: 5 V; • Dark current: no more than 1 μA; • Current photosensitivity: not less than 0.2 µA/lx. | 0.3 | — | — | Photo | DIP | — | — | — | — | — | — | — | — | 400pcs | — | — | — | — | — | — | — | ||||||||
Chip K131LR3
#13623
|
25776 | СНГ | 317 шт |
6 грн.
|
|
Logical element 2-2-2-3I-4OR-NOT with the possibility of expansion by OR. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Zener diode D815A
#14020
|
26199 | СНГ | 317 шт |
8 грн.
|
|
Medium power silicon zener diode, 5.6V The main technical parameters of the Zener diode D815A: • Stabilization voltage spread: 5... 6.2 V at Ist 1 A; • Temperature coefficient of stabilization voltage: 0.045%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 0.6 Ohm; • Minimum allowable stabilization current: 50 mA; • Maximum allowable stabilization current: 1.4 A; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С | 2.5 | — | — | — | Screw | — | — | — | — | — | — | — | 8Вт | 100 pieces. | — | — | — | — | 5V6 | ks620 | — | ||||||||
Transistor 2T903B (=KT903B)
#12229
|
24608 | СНГ | 311 шт |
40 грн.
|
|
The main technical characteristics of the transistor 2T903B: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 30 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: more than 120 MHz; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 4 V; • Ik max - Maximum allowable DC collector current: 3 A; • Ik and max - The maximum allowable collector pulse current: 10 A; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 40... 180; • Sk - Collector junction capacitance: no more than 180 pF; • Rke us - Saturation resistance between collector and emitter: no more than 1 ohm; • Рout - Transistor output power: not less than 10 W at 50 MHz. | 22 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | NPN | 30Вт | 20pcs | 60В | 10А | — | 180 | — | — | — | ||||||||
| 20147 | MIC | 309 шт |
4 грн.
|
|
0.4 | — | — | — | DIP | DO-15 | 3kV | 200mA | — | — | High voltage | — | — | 1000pcs | — | — | — | — | — | — | single | ||||||||||
Diode KD510A
#16195
|
28441 | СНГ | 309 шт |
2 грн.
|
|
The main technical characteristics of the KD510A diode: • Uopp max - Maximum direct reverse voltage: 50 V; • Inp max - Maximum forward current: 200 mA; • Unp - DC forward voltage: no more than 1.1 V at Inp 0.2 A; • Iobr - Constant reverse current: no more than 5 μA at Uobr 50 V; • tvoc arr - Reverse recovery time: 0.004 µs; • Sd - Total capacitance: 4 pF. | 0.2 | — | — | — | DIP | КД-2 | 50V | 200mA | 1.5A | — | Pulse | — | — | 1000pcs | — | — | — | — | — | — | single | ||||||||
Chip K155RE21
#961
|
21290 | СНГ | 306 шт |
5 грн.
|
|
Integrated circuit of the TTL series. K155RE21 microcircuits are a read-only memory (ROM) with a capacity of 1024 bits (with an organization of 256 x 4) using a binary code converter into a Russian alphabet character code. Contains 1620 integral elements. Housing type 238.16-2, weight no more than 2 g. Maximum permissible operating modes K155RE21: - Supply voltage .......... 4.75 - 5.25 V - Low level input voltage .......... - High level input voltage .......... > 2.4V - Low level input current .......... - High level output current .......... - Load capacity .......... - The duration of the front and cut of the input pulse - Ambient temperature: - K155 .......... -10 + 70 °С - KM155 ......... - 45 + 85 ° С | 1 | DIP16 | — | — | DIP | — | — | — | — | Memory | — | — | — | 90pcs | — | — | — | — | — | — | — | ||||||||
Zener diode BZX55C 36V
#4212
|
20215 | Rectron Semiconductor | 305 шт |
1 грн.
|
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Zener diode 36V 0.5W (BZX55C 36V) | 0.12 | — | — | — | DIP | — | — | — | — | — | — | — | 500мВт | 500pcs | — | — | — | — | 36V | DO-35 | — | ||||||||
Triac BT134-600E
#5634
|
21149 | NXP | 305 шт |
10 грн.
|
|
0.7 | — | — | — | DIP | SOT-82 | 600V | 4А | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||||
Chip K561LS2
#988
|
21676 | СНГ | 302 шт |
5 грн.
|
|
Four logical AND-OR elements. | 1.1 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | ||||||||
Zener diode BZX55C 27V
#4209
|
20200 | Rectron Semiconductor | 301 шт |
1 грн.
|
|
Zener diode 27V 0.5W (BZX55C 27V) | 0.12 | — | — | — | DIP | — | — | — | — | — | — | — | 500мВт | 500pcs | — | — | — | — | 27V | DO-35 | — | ||||||||
Transistor KT3128A
#10341
|
22328 | СНГ | 300 шт |
5 грн.
|
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Designed for use in TV channel selectors with automatic gain control. | 0.4 | — | КТ-1 | Bipolar | DIP | — | — | — | — | — | — | PNP | 100мВт | 500pcs | 20В | 20мА | 800МГц | 150 | — | — | — | ||||||||
Zener Diode BZX55C 20V
#4206
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20221 | Rectron Semiconductor | 299 шт |
1 грн.
|
|
Zener diode 20V 0.5W (BZX55C 20V) | 0.12 | — | — | — | DIP | — | — | — | — | — | — | — | 500мВт | 500pcs | — | — | — | — | 20V | DO-35 | — | ||||||||
Chip K131TM2
#3926
|
22186 | СНГ | 298 шт |
6 грн.
|
|
Two D flip-flops. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Transistor KT3107Zh
#10104
|
21843 | СНГ | 297 шт |
3 грн.
|
|
0.3 | — | TO92 | Bipolar | DIP | — | — | — | — | — | — | PNP | 300мВт | 1000pcs | 25В | 200мА | 200МГц | 450 | — | — | — | |||||||||
Transistor 2T208M1 (=KT208M)
#10315
|
22264 | СНГ | 296 шт |
10 грн.
|
|
The 2T208M1 transistor is used to amplify, generate and convert electrical signals. | 0.3 | — | TO92 | Bipolar | DIP | — | — | — | — | — | — | PNP | 200мВт | 1000pcs | 60В | 300мА | — | 40 | — | — | — | ||||||||
Chip K172LK1
#875
|
21957 | СНГ | 295 шт |
6 грн.
|
|
2 logic elements 2I-2OR/2I-2OR-NOT. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Transistor MP114
#13683
|
25842 | СНГ | 295 шт |
6 грн.
|
|
Transistors MP114 silicon alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | PNP | 150мВт | 100 pieces. | 60В | 10мА | 0,1МГц | 10 | — | — | — | ||||||||
Chip K561TP2
#4055
|
21678 | СНГ | 294 шт |
6 грн.
|
|
Digital microcircuit of the CMOS series. The K561TP2 microcircuits are four RS-flip-flops (asynchronous) with a third state at the input. Contain 154 integral elements. | 1.1 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | ||||||||
Chip L7812CV (7812)
#3502
|
21182 | ST MICROELECTRONICS | 290 шт |
12 грн.
|
|
Stabilizer 12V/1.5A | 2.8 | TO-220 | — | — | DIP | — | — | — | — | Nutrition | — | — | — | 50pcs | — | — | — | — | — | — | — | ||||||||
Zener diode BZX55C 33V
#4211
|
20229 | Rectron Semiconductor | 290 шт |
1 грн.
|
|
Zener diode 33V 0.5W (BZX55C 33V) | 0.12 | — | — | — | DIP | — | — | — | — | — | — | — | 500мВт | 500pcs | — | — | — | — | 33V | DO-35 | — | ||||||||
| 21318 | INTEGRAL | 290 шт |
13 грн.
|
|
2 logic elements 4I. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||||
Chip K131LD1
#14132
|
26315 | СНГ | 287 шт |
6 грн.
|
|
Two four-input OR expanders. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Chip KR140UD5A
#13613
|
25766 | СНГ | 284 шт |
10 грн.
|
|
Medium-precision operational amplifier with composite transistors (emitter followers) at the input, without frequency correction. In addition to the common output, it has differential outputs. | 1 | DIP14 | — | — | DIP | — | — | — | — | Amplifiers | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
| 26194 | СНГ | 283 шт |
8 грн.
|
|
Medium power silicon zener diode, 33V The main technical parameters of the Zener diode D816V: • Stabilization voltage spread: 29.5... 36 V at Ist 150 mA; • Temperature coefficient of stabilization voltage: 0.12%/°С; • Temporary stabilization voltage instability: ± 5%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 10 Ohm; • Minimum allowable stabilization current: 10 mA; • Maximum allowable stabilization current: 150 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 2.5 | — | — | — | Screw | — | — | — | — | — | — | — | 5Вт | 100 pieces. | — | — | — | — | 33V | ks620 | — | |||||||||
Diode 1N5818
#10339
|
22326 | MIC | 280 шт |
1 грн.
|
|
0.4 | — | — | — | DIP | DO-41 | 30V | 1A | — | — | Schottky | — | — | 1000pcs | — | — | — | — | — | — | single | |||||||||
Chip K176LA9
#920
|
21418 | СНГ | 278 шт |
4 грн.
|
|
The K176LA9 microcircuit contains three three-input basic elements AND with output signal inversion | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Transistor MP26
#3441
|
23003 | СНГ | 278 шт |
6 грн.
|
|
Transistor MP26 germanium alloyed pnp universal low-frequency. Designed to amplify and switch low frequency signals. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | PNP | 200мВт | 100 pieces. | 70В | 150мА | — | 25 | — | — | — |
