Active radio components

Results: 8086

MPN Article Brand In stock Price Discounts Quantity Description Weight g. Type of shell Transistor case type Transistor type Mounting type Type of shell Urev. max, V Ipr. max. Ipr. imp. max. Appointment Diode type Structure Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain Stabilization voltage Zener diode housing type Breakdown voltage Diode design
20147 MIC 309 шт
4 грн.
100+3,60 грн.
200+3,20 грн.
500+2,80 грн.
0.4 — — — DIP DO-15 3kV 200mA — — High voltage — — 1000pcs — — — — — — — single
28441 СНГ 309 шт
2 грн.
50+1,80 грн.
200+1,60 грн.
500+1,40 грн.
The main technical characteristics of the KD510A diode: • Uopp max - Maximum direct reverse voltage: 50 V; • Inp max - Maximum forward current: 200 mA; • Unp - DC forward voltage: no more than 1.1 V at Inp 0.2 A; • Iobr - Constant reverse current: no more than 5 μA at Uobr 50 V; • tvoc arr - Reverse recovery time: 0.004 µs; • Sd - Total capacitance: 4 pF. 0.2 — — — DIP КД-2 50V 200mA 1.5A — Pulse — — 1000pcs — — — — — — — single
21290 СНГ 306 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Integrated circuit of the TTL series. K155RE21 microcircuits are a read-only memory (ROM) with a capacity of 1024 bits (with an organization of 256 x 4) using a binary code converter into a Russian alphabet character code. Contains 1620 integral elements. Housing type 238.16-2, weight no more than 2 g. Maximum permissible operating modes K155RE21: - Supply voltage .......... 4.75 - 5.25 V - Low level input voltage .......... - High level input voltage .......... > 2.4V - Low level input current .......... - High level output current .......... - Load capacity .......... - The duration of the front and cut of the input pulse - Ambient temperature: - K155 .......... -10 + 70 °С - KM155 ......... - 45 + 85 ° С 1 DIP16 — — DIP — — — — Memory — — — 90pcs — — — — — — — —
20215 Rectron Semiconductor 305 шт
1 грн.
50+0,90 грн.
100+0,80 грн.
250+0,75 грн.
Zener diode 36V 0.5W (BZX55C 36V) 0.12 — — — DIP — — — — — — — 500мВт 500pcs — — — — 36V DO-35 — —
21149 NXP 305 шт
10 грн.
10+9 грн.
50+8 грн.
0.7 — — — DIP SOT-82 600V 4А — — — — — 100 pieces. — — — — — — — —
21676 СНГ 302 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Four logical AND-OR elements. 1.1 DIP16 — — DIP — — — — Logics — — — 90pcs — — — — — — — —
20200 Rectron Semiconductor 301 шт
1 грн.
50+0,90 грн.
100+0,80 грн.
250+0,75 грн.
Zener diode 27V 0.5W (BZX55C 27V) 0.12 — — — DIP — — — — — — — 500мВт 500pcs — — — — 27V DO-35 — —
20221 Rectron Semiconductor 299 шт
1 грн.
50+0,90 грн.
100+0,80 грн.
250+0,75 грн.
Zener diode 20V 0.5W (BZX55C 20V) 0.12 — — — DIP — — — — — — — 500мВт 500pcs — — — — 20V DO-35 — —
22186 СНГ 298 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Two D flip-flops. 1 DIP14 — — DIP — — — — Logics — — — 100 pieces. — — — — — — — —
21843 СНГ 297 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
0.3 — TO92 Bipolar DIP — — — — — — PNP 300мВт 1000pcs 25В 200мА 200МГц 450 — — — —
22264 СНГ 296 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
The 2T208M1 transistor is used to amplify, generate and convert electrical signals. 0.3 — TO92 Bipolar DIP — — — — — — PNP 200мВт 1000pcs 60В 300мА — 40 — — — —
23349 СНГ 296 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
Transistor germanium structure pnp universal. Designed for use in amplifying, generator and pulse stages of low and high frequencies up to 30 MHz. 9.2 — — Bipolar DIP — — — — — — PNP 3Вт 50pcs 40В 1.5А 30МГц 120 — — — —
21957 СНГ 295 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
2 logic elements 2I-2OR/2I-2OR-NOT. 1 DIP14 — — DIP — — — — Logics — — — 100 pieces. — — — — — — — —
25842 СНГ 295 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistors MP114 silicon alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. 1.8 — КТЮ-3-3 Bipolar DIP — — — — — — PNP 150мВт 100 pieces. 60В 10мА 0,1МГц 10 — — — —
21678 СНГ 294 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Digital microcircuit of the CMOS series. The K561TP2 microcircuits are four RS-flip-flops (asynchronous) with a third state at the input. Contain 154 integral elements. 1.1 DIP16 — — DIP — — — — Logics — — — 90pcs — — — — — — — —
21182 ST MICROELECTRONICS 290 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Stabilizer 12V/1.5A 2.8 TO-220 — — DIP — — — — Nutrition — — — 50pcs — — — — — — — —
20229 Rectron Semiconductor 290 шт
1 грн.
50+0,90 грн.
100+0,80 грн.
250+0,75 грн.
Zener diode 33V 0.5W (BZX55C 33V) 0.12 — — — DIP — — — — — — — 500мВт 500pcs — — — — 33V DO-35 — —
21318 INTEGRAL 290 шт
13 грн.
10+12,35 грн.
50+11,70 грн.
100+10,40 грн.
2 logic elements 4I. 1 DIP14 — — DIP — — — — Logics — — — 100 pieces. — — — — — — — —
22328 СНГ 290 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Designed for use in TV channel selectors with automatic gain control. 0.4 — КТ-1 Bipolar DIP — — — — — — PNP 100мВт 500pcs 20В 20мА 800МГц 150 — — — —
26199 СНГ 287 шт
8 грн.
50+7,20 грн.
100+6,40 грн.
250+6 грн.
Medium power silicon zener diode, 5.6V The main technical parameters of the Zener diode D815A: • Stabilization voltage spread: 5... 6.2 V at Ist 1 A; • Temperature coefficient of stabilization voltage: 0.045%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 0.6 Ohm; • Minimum allowable stabilization current: 50 mA; • Maximum allowable stabilization current: 1.4 A; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С 2.5 — — — Screw — — — — — — — 8Вт 100 pieces. — — — — 5V6 ks620 — —
26315 СНГ 287 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Two four-input OR expanders. 1 DIP14 — — DIP — — — — Logics — — — 100 pieces. — — — — — — — —
25766 СНГ 284 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Medium-precision operational amplifier with composite transistors (emitter followers) at the input, without frequency correction. In addition to the common output, it has differential outputs. 1 DIP14 — — DIP — — — — Amplifiers — — — 100 pieces. — — — — — — — —
26194 СНГ 283 шт
8 грн.
50+7,20 грн.
100+6,40 грн.
250+6 грн.
Medium power silicon zener diode, 33V The main technical parameters of the Zener diode D816V: • Stabilization voltage spread: 29.5... 36 V at Ist 150 mA; • Temperature coefficient of stabilization voltage: 0.12%/°С; • Temporary stabilization voltage instability: ± 5%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 10 Ohm; • Minimum allowable stabilization current: 10 mA; • Maximum allowable stabilization current: 150 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С 2.5 — — — Screw — — — — — — — 5Вт 100 pieces. — — — — 33V ks620 — —
22326 MIC 280 шт
1 грн.
100+0,90 грн.
200+0,80 грн.
500+0,70 грн.
0.4 — — — DIP DO-41 30V 1A — — Schottky — — 1000pcs — — — — — — — single
21418 СНГ 278 шт
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
The K176LA9 microcircuit contains three three-input basic elements AND with output signal inversion 1 DIP14 — — DIP — — — — Logics — — — 100 pieces. — — — — — — — —
23003 СНГ 278 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistor MP26 germanium alloyed pnp universal low-frequency. Designed to amplify and switch low frequency signals. 1.8 — КТЮ-3-3 Bipolar DIP — — — — — — PNP 200мВт 100 pieces. 70В 150мА — 25 — — — —
21388 СНГ 276 шт
14 грн.
10+13,30 грн.
50+12,60 грн.
100+11,20 грн.
The KR590KN1 microcircuit is an eight-channel switch (rMOS) with a decoder and is designed for switching voltages from - 5 to + 5 V, for multi-channel digital information processing systems, in analog-to-digital converters. The ICs are input compatible with TTL circuits, have an enable command, input overvoltage protection, zero residual voltage, BCD controlled, select 1 of 8 channels. 1.1 DIP16 — — DIP — — — — Logics — — — 90pcs — — — — — — — —
21341 СНГ 272 шт
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
Integrated circuit of the TTL series. KM155LR4 microcircuits are a logical element 4-4I-2OR-NOT with the possibility of expansion by OR. Contains 22 integral elements. Housing type 201.14-1, weight no more than 1 g. Maximum permissible operating modes: - Supply voltage .......... 4.75 - 5.25 V - Low level input voltage .......... - High level input voltage .......... > 2.4V - Low level input current .......... - High level output current .......... - Load capacity .......... - The duration of the front and cut of the input pulse - Ambient temperature: - K155 .......... -10 + 70 °С - KM155 ......... - 45 + 85 ° С 1 DIP14 — — DIP — — — — Logics — — — 100 pieces. — — — — — — — —
22203 СНГ 270 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
System controller. 4 DIP28 — — DIP — — — — Microcontrollers — — — 60pcs — — — — — — — —
25806 ST MICROELECTRONICS 270 шт
5 грн.
10+4,75 грн.
30+4,50 грн.
50+4 грн.
0.12 — — — SMD SOT323-6 — — — — Protective — 100Вт 3000pcs — — — — — — 6.1V assembly