Active radio components

Results: 8086

MPN Article Brand In stock Price Discounts Quantity Description Weight g. Type of shell Transistor case type Transistor type Mounting type Type of shell Urev. max, V Ipr. max. Ipr. imp. max. Appointment Diode type Structure Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain Stabilization voltage Zener diode housing type Breakdown voltage Diode design
20226 Rectron Semiconductor 375 шт
1 грн.
50+0,90 грн.
100+0,80 грн.
250+0,75 грн.
Zener diode 7.5V 0.5W (BZX55C 7V5) 0.12 DIP 500мВт 500pcs 7V5 DO-35
24038 СНГ 373 шт
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
Designed for use as switching elements in high-speed impulse devices of the nanosecond range. Are issued in the glass case with flexible conclusions. 0.25 DIP КД-121 30V 20mA Pulse 100 pieces. single
28505 СНГ 371 шт
25 грн.
10+22,50 грн.
50+20 грн.
Silicon triac, planar, pnpn structures, triode, non-lockable, symmetrical. 11 Screw 400V 5A 40pcs
25741 СНГ 369 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
2 logical elements 4I-NOT. 1.2 DIP14 DIP Logics 100 pieces.
20619 363 шт
1.30 грн.
21687 СНГ 356 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Programmable interrupt controller. Handles up to 8 microprocessor interrupt requests from external devices. The IS provides for the possibility of expanding the number of serviced requests up to 64 by means of its cascade connection. Allows you to reduce the software and time spent on interrupts in systems with multiple priority levels. 3.5 DIP28 DIP Microcontrollers 36pcs
25664 СНГ 356 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistors MP106 silicon alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP 150мВт 100 pieces. 15В 10мА 0,5МГц 100
26697 СНГ 352 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
KT3101A-2 transistors are silicon epitaxial-planar npn amplifying structures with a normalized noise figure at frequencies of 1 and 2.25 GHz. Designed for use in the input and subsequent stages of microwave amplifiers. The main technical characteristics of the transistor KT3101AM: • Transistor structure: npn • Рк max - Constant power dissipation of the collector: 100 mW; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 4000 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 15 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 2.5 V; • Ik max - Maximum allowable DC collector current: 20 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 0.5 μA (15V); • h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter: 35...300; • Sk - Collector junction capacitance: no more than 1.5 pF; • Ksh - Transistor noise figure: no more than 4.5 dB at a frequency of 2.25 GHz • tk - Time constant of the feedback circuit at high frequency: no more than 10 ps. 0.25 КТ-14 Bipolar SMD NPN 100мВт 20pcs 15В 20мА 4ГГц 300
20159 VISHAY 351 шт
2.20 грн.
100+1,98 грн.
200+1,76 грн.
500+1,54 грн.
0.4 DIP DO-15 800V 1.5A 1.5A Fast 500pcs single
21379 СНГ 349 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Two logical elements 4I-NOT. 1 DIP14 DIP Logics 100 pieces.
20150 VISHAY 349 шт
1 грн.
100+0,90 грн.
200+0,80 грн.
500+0,70 грн.
Diode 1A, 400V, 300ns 0.4 DIP DO-41 400V 1A Fast 500pcs single
21685 СНГ 348 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
Programmable serial interface (universal synchronous - asynchronous transceiver). The IC converts the parallel code received from the central processor into a serial stream of characters with service bits. 3.5 DIP28 DIP Interfaces 40pcs
21231 СНГ 346 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
3 logical elements 3I-NOT. 1 DIP14 DIP Logics 100 pieces.
24256 СНГ 346 шт
6 грн.
50+5,40 грн.
100+4,80 грн.
250+4,50 грн.
Medium power silicon zener diode, 22V 4.2 Screw 5Вт 100 pieces. 22V ks620
20353 ALPHA OMEGA SEMICONDUCTOR 345 шт
6 грн.
10+5,70 грн.
30+5,40 грн.
50+4,80 грн.
0.1 SMD Protective 125Вт 3000pcs 5V assembly
21668 СНГ 344 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
The K170AP2V microcircuit consists of 2 signal conditioners for communication lines of data transmission equipment. 0.5 DIP8 DIP Logics 200pcs
21407 СНГ 342 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Six level converters. 1.1 DIP16 DIP Logics 100 pieces.
24250 СНГ 339 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistors MP116 silicon alloyed pnp amplifying low-frequency with non-normalized noise factor. Designed to amplify low frequency signals. 1.5 КТЮ-3-6 Bipolar DIP PNP 150мВт 100 pieces. 15В 10мА 0,5МГц 100
20209 Rectron Semiconductor 338 шт
1 грн.
50+0,90 грн.
100+0,80 грн.
250+0,75 грн.
Zener diode 2.4V 0.5W (BZX55C 2V4) 0.12 DIP 500мВт 500pcs 2V4 DO-35
23544 СНГ 335 шт
1 грн.
50+0,90 грн.
100+0,80 грн.
250+0,75 грн.
Zener diode 5.1V 0.45W. 0.2 DIP 450мВт 500pcs 5V1 kd2
22111 СНГ 331 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Logic element 8I-NOT 1 DIP14 DIP Logics 100 pieces.
20166 YFW 330 шт
6 грн.
100+5,40 грн.
200+4,80 грн.
500+4,20 грн.
1000V 10A 1.8 DIP R-6 1000V 10A Rectifier 500pcs single
21423 СНГ 327 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Binary/BCD 4-digit up/down counter with preset. 1.1 DIP16 DIP Logics 90pcs
26932 СНГ 327 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
The main technical characteristics of the P216A transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 30 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 40 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 7.5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.5 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 20... 80; • Rke us - Saturation resistance between collector and emitter: no more than 0.2 Ohm. 10 Bipolar DIP PNP 30Вт 20pcs 40В 7,5A 0,1МГц 80
23349 СНГ 326 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
Transistor germanium structure pnp universal. Designed for use in amplifying, generator and pulse stages of low and high frequencies up to 30 MHz. 9.2 Bipolar DIP PNP 3Вт 50pcs 40В 1.5А 30МГц 120
25876 СНГ 326 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistor MP103A germanium alloyed npn amplifying low-frequency with non-normalized noise factors. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP NPN 100мВт 100 pieces. 10В 100мА 1МГц 30
28222 СНГ 326 шт
20 грн.
A block of silicon, diffusion diodes. Main technical characteristics of the diode KTS402I: • Uobr and max - Maximum pulse reverse voltage: 500 V; • Inp max - Maximum forward current: 600 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - DC reverse current: no more than 125 µA at Uobr 500 V. 5.7 DIP 500V 600mA Diode bridge 150pcs
20416 ON SEMICONDUCTOR 325 шт
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
500+1,40 грн.
0.1 SOT23 Bipolar SMD PNP 350мВт 3000pcs 150В 600мА 240
21888 СНГ 325 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Four-bit 2-1 tristate selector with inverted outputs. 1 DIP16 DIP Logics 90pcs
27444 TOSHIBA 324 шт
1 грн.
100+0,90 грн.
200+0,80 грн.
500+0,70 грн.
0.3 SMD SMA 1000V 1A Rectifier 2000pcs single