Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Breakdown voltage | Diode design |
|---|
Diode Bridge KBPC810
#9857
|
21636 | SEP | 356 шт |
18 грн.
|
|
(1000V;8.0A) | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Transistor MP106
#13536
|
25664 | СНГ | 356 шт |
6 грн.
|
|
Transistors MP106 silicon alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | PNP | 150мВт | 100 pieces. | 15В | 10мА | 0,5МГц | 100 | — | — | — | — | ||||||||||
Transistor KT3101AM
#14485
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26697 | СНГ | 352 шт |
15 грн.
|
|
KT3101A-2 transistors are silicon epitaxial-planar npn amplifying structures with a normalized noise figure at frequencies of 1 and 2.25 GHz. Designed for use in the input and subsequent stages of microwave amplifiers. The main technical characteristics of the transistor KT3101AM: • Transistor structure: npn • Рк max - Constant power dissipation of the collector: 100 mW; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 4000 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 15 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 2.5 V; • Ik max - Maximum allowable DC collector current: 20 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 0.5 μA (15V); • h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter: 35...300; • Sk - Collector junction capacitance: no more than 1.5 pF; • Ksh - Transistor noise figure: no more than 4.5 dB at a frequency of 2.25 GHz • tk - Time constant of the feedback circuit at high frequency: no more than 10 ps. | 0.25 | — | КТ-14 | Bipolar | SMD | — | — | — | — | — | — | NPN | 100мВт | 20pcs | 15В | 20мА | 4ГГц | 300 | — | — | — | — | ||||||||||
| 20159 | VISHAY | 351 шт |
2.20 грн.
|
|
0.4 | — | — | — | DIP | DO-15 | 800V | 1.5A | 1.5A | — | Fast | — | — | 500pcs | — | — | — | — | — | — | — | single | ||||||||||||
Chip K561LA8
#777
|
21379 | СНГ | 349 шт |
5 грн.
|
|
Two logical elements 4I-NOT. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
| 20150 | VISHAY | 349 шт |
1 грн.
|
|
Diode 1A, 400V, 300ns | 0.4 | — | — | — | DIP | DO-41 | 400V | 1A | — | — | Fast | — | — | 500pcs | — | — | — | — | — | — | — | single | |||||||||||
Chip KR580VV51A
#7399
|
21685 | СНГ | 348 шт |
8 грн.
|
|
Programmable serial interface (universal synchronous - asynchronous transceiver). The IC converts the parallel code received from the central processor into a serial stream of characters with service bits. | 3.5 | DIP28 | — | — | DIP | — | — | — | — | Interfaces | — | — | — | 40pcs | — | — | — | — | — | — | — | — | ||||||||||
Chip K155LA4
#754
|
21231 | СНГ | 346 шт |
6 грн.
|
|
3 logical elements 3I-NOT. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Zener diode D816A
#11967
|
24256 | СНГ | 346 шт |
6 грн.
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|
Medium power silicon zener diode, 22V | 4.2 | — | — | — | Screw | — | — | — | — | — | — | — | 5Вт | 100 pieces. | — | — | — | — | 22V | ks620 | — | — | ||||||||||
| 20353 | ALPHA OMEGA SEMICONDUCTOR | 345 шт |
6 грн.
|
|
0.1 | — | — | — | SMD | — | — | — | — | — | Protective | — | 125Вт | 3000pcs | — | — | — | — | — | — | 5V | assembly | ||||||||||||
Chip K170AP2V
#5699
|
21668 | СНГ | 344 шт |
6 грн.
|
|
The K170AP2V microcircuit consists of 2 signal conditioners for communication lines of data transmission equipment. | 0.5 | DIP8 | — | — | DIP | — | — | — | — | Logics | — | — | — | 200pcs | — | — | — | — | — | — | — | — | ||||||||||
Chip KR1561PU4
#9818
|
21407 | СНГ | 342 шт |
6 грн.
|
|
Six level converters. | 1.1 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Transistor MP116
#11961
|
24250 | СНГ | 339 шт |
10 грн.
|
|
Transistors MP116 silicon alloyed pnp amplifying low-frequency with non-normalized noise factor. Designed to amplify low frequency signals. | 1.5 | — | КТЮ-3-6 | Bipolar | DIP | — | — | — | — | — | — | PNP | 150мВт | 100 pieces. | 15В | 10мА | 0,5МГц | 100 | — | — | — | — | ||||||||||
Transistor KT817B
#12236
|
24615 | СНГ | 339 шт |
10 грн.
|
|
Transistor KT817B silicon mesa-epitaxial-planar structure npn amplifying. | 0.7 | — | TO126 | Bipolar | DIP | — | — | — | — | — | — | NPN | 25Вт | 200pcs | 45В | 3А | 3МГц | 40 | — | — | — | — | ||||||||||
Zener diode BZX55C 2V4
#4184
|
20209 | Rectron Semiconductor | 338 шт |
1 грн.
|
|
Zener diode 2.4V 0.5W (BZX55C 2V4） | 0.12 | — | — | — | DIP | — | — | — | — | — | — | — | 500мВт | 500pcs | — | — | — | — | 2V4 | DO-35 | — | — | ||||||||||
Zener diode KS126D1
#11427
|
23544 | СНГ | 333 шт |
1 грн.
|
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Zener diode 5.1V 0.45W. | 0.2 | — | — | — | DIP | — | — | — | — | — | — | — | 450мВт | 500pcs | — | — | — | — | 5V1 | kd2 | — | — | ||||||||||
Chip K131LA2
#8399
|
22111 | СНГ | 331 шт |
6 грн.
|
|
Logic element 8I-NOT | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
| 20166 | YFW | 330 шт |
6 грн.
|
|
1000V 10A | 1.8 | — | — | — | DIP | R-6 | 1000V | 10A | — | — | Rectifier | — | — | 500pcs | — | — | — | — | — | — | — | single | |||||||||||
Chip K561IE14
#725
|
21423 | СНГ | 327 шт |
6 грн.
|
|
Binary/BCD 4-digit up/down counter with preset. | 1.1 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | — | ||||||||||
Transistor P216A
#14714
|
26932 | СНГ | 327 шт |
15 грн.
|
|
The main technical characteristics of the P216A transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 30 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 40 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 7.5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.5 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 20... 80; • Rke us - Saturation resistance between collector and emitter: no more than 0.2 Ohm. | 10 | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 30Вт | 20pcs | 40В | 7,5A | 0,1МГц | 80 | — | — | — | — | ||||||||||
Transistor MP103A
#13712
|
25876 | СНГ | 326 шт |
5 грн.
|
|
Transistor MP103A germanium alloyed npn amplifying low-frequency with non-normalized noise factors. Designed to amplify low frequency signals. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | NPN | 100мВт | 100 pieces. | 10В | 100мА | 1МГц | 30 | — | — | — | — | ||||||||||
Diode bridge KTS402I
#15988
|
28222 | СНГ | 326 шт |
20 грн.
|
A block of silicon, diffusion diodes. Main technical characteristics of the diode KTS402I: • Uobr and max - Maximum pulse reverse voltage: 500 V; • Inp max - Maximum forward current: 600 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - DC reverse current: no more than 125 µA at Uobr 500 V. | 5.7 | — | — | — | DIP | — | 500V | 600mA | — | — | Diode bridge | — | — | 150pcs | — | — | — | — | — | — | — | — | |||||||||||
| 21888 | СНГ | 325 шт |
6 грн.
|
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Four-bit 2-1 tristate selector with inverted outputs. | 1 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | — | |||||||||||
Chip KR531LA4 (=SN74S10)
#5649
|
22276 | СНГ | 322 шт |
6 грн.
|
|
Three logical elements 3I-NOT. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Phototransistor FT-8 gr.A
#12174
|
24467 | СНГ | 317 шт |
8 грн.
|
|
Designed for use as receivers and sensors of infrared radiation as part of optoelectronic equipment, systems of photoelectric automation and non-contact temperature measurement, computer and measuring equipment. The main technical parameters of the phototransistor FT-8: • Photosensitive element size: diameter 0.5 mm; • Wavelength of maximum spectral distribution of photosensitivity: 0.9...0.95 µm; • Rated operating voltage: 5 V; • Dark current: no more than 1 μA; • Current photosensitivity: not less than 0.2 µA/lx. | 0.3 | — | — | Photo | DIP | — | — | — | — | — | — | — | — | 400pcs | — | — | — | — | — | — | — | — | ||||||||||
Chip K131LR3
#13623
|
25776 | СНГ | 317 шт |
6 грн.
|
|
Logical element 2-2-2-3I-4OR-NOT with the possibility of expansion by OR. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Diode S1M
#15204
|
27444 | TOSHIBA | 317 шт |
1 грн.
|
|
0.3 | — | — | — | SMD | SMA | 1000V | 1A | — | — | Rectifier | — | — | 2000pcs | — | — | — | — | — | — | — | single | |||||||||||
Chip K561LA9
#5644
|
22144 | СНГ | 312 шт |
6 грн.
|
|
Three three-input elements AND-NOT. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
| 20416 | ON SEMICONDUCTOR | 311 шт |
2 грн.
|
|
0.1 | — | SOT23 | Bipolar | SMD | — | — | — | — | — | — | PNP | 350мВт | 3000pcs | 150В | 600мА | — | 240 | — | — | — | — | ||||||||||||
Transistor 2T903B (=KT903B)
#12229
|
24608 | СНГ | 311 шт |
40 грн.
|
|
The main technical characteristics of the transistor 2T903B: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 30 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: more than 120 MHz; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 4 V; • Ik max - Maximum allowable DC collector current: 3 A; • Ik and max - The maximum allowable collector pulse current: 10 A; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 40... 180; • Sk - Collector junction capacitance: no more than 180 pF; • Rke us - Saturation resistance between collector and emitter: no more than 1 ohm; • Рout - Transistor output power: not less than 10 W at 50 MHz. | 22 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | NPN | 30Вт | 20pcs | 60В | 10А | — | 180 | — | — | — | — |
