Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Breakdown voltage | Diode design |
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Zener diode BZX55C 7V5
#4197
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20226 | Rectron Semiconductor | 375 шт |
1 грн.
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Zener diode 7.5V 0.5W (BZX55C 7V5) | 0.12 | — | — | — | DIP | — | — | — | — | — | — | — | 500мВт | 500pcs | — | — | — | — | 7V5 | DO-35 | — | — | ||||||||||
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Diode 2D503A (=KD503A)
#3474
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24038 | СНГ | 373 шт |
3 грн.
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Designed for use as switching elements in high-speed impulse devices of the nanosecond range. Are issued in the glass case with flexible conclusions. | 0.25 | — | — | — | DIP | КД-121 | 30V | 20mA | — | — | Pulse | — | — | 100 pieces. | — | — | — | — | — | — | — | single | ||||||||||
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Triac KU208G
#3413
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28505 | СНГ | 371 шт |
25 грн.
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Silicon triac, planar, pnpn structures, triode, non-lockable, symmetrical. | 11 | — | — | — | Screw | — | 400V | 5A | — | — | — | — | — | 40pcs | — | — | — | — | — | — | — | — | ||||||||||
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Chip KM155LA1
#3937
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25741 | СНГ | 369 шт |
6 грн.
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2 logical elements 4I-NOT. | 1.2 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
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Dinistor LLDB3
#9218
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20619 | — | 363 шт |
1.30 грн.
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— | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||||
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Chip KR580VN59
#7363
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21687 | СНГ | 356 шт |
10 грн.
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Programmable interrupt controller. Handles up to 8 microprocessor interrupt requests from external devices. The IS provides for the possibility of expanding the number of serviced requests up to 64 by means of its cascade connection. Allows you to reduce the software and time spent on interrupts in systems with multiple priority levels. | 3.5 | DIP28 | — | — | DIP | — | — | — | — | Microcontrollers | — | — | — | 36pcs | — | — | — | — | — | — | — | — | ||||||||||
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Transistor MP106
#13536
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25664 | СНГ | 356 шт |
6 грн.
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Transistors MP106 silicon alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | PNP | 150мВт | 100 pieces. | 15В | 10мА | 0,5МГц | 100 | — | — | — | — | ||||||||||
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Transistor KT3101AM
#14485
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26697 | СНГ | 352 шт |
15 грн.
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KT3101A-2 transistors are silicon epitaxial-planar npn amplifying structures with a normalized noise figure at frequencies of 1 and 2.25 GHz. Designed for use in the input and subsequent stages of microwave amplifiers. The main technical characteristics of the transistor KT3101AM: • Transistor structure: npn • Рк max - Constant power dissipation of the collector: 100 mW; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 4000 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 15 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 2.5 V; • Ik max - Maximum allowable DC collector current: 20 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 0.5 μA (15V); • h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter: 35...300; • Sk - Collector junction capacitance: no more than 1.5 pF; • Ksh - Transistor noise figure: no more than 4.5 dB at a frequency of 2.25 GHz • tk - Time constant of the feedback circuit at high frequency: no more than 10 ps. | 0.25 | — | КТ-14 | Bipolar | SMD | — | — | — | — | — | — | NPN | 100мВт | 20pcs | 15В | 20мА | 4ГГц | 300 | — | — | — | — | ||||||||||
| 20159 | VISHAY | 351 шт |
2.20 грн.
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0.4 | — | — | — | DIP | DO-15 | 800V | 1.5A | 1.5A | — | Fast | — | — | 500pcs | — | — | — | — | — | — | — | single | ||||||||||||
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Chip K561LA8
#777
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21379 | СНГ | 349 шт |
5 грн.
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Two logical elements 4I-NOT. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
| 20150 | VISHAY | 349 шт |
1 грн.
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Diode 1A, 400V, 300ns | 0.4 | — | — | — | DIP | DO-41 | 400V | 1A | — | — | Fast | — | — | 500pcs | — | — | — | — | — | — | — | single | |||||||||||
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Chip KR580VV51A
#7399
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21685 | СНГ | 348 шт |
8 грн.
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Programmable serial interface (universal synchronous - asynchronous transceiver). The IC converts the parallel code received from the central processor into a serial stream of characters with service bits. | 3.5 | DIP28 | — | — | DIP | — | — | — | — | Interfaces | — | — | — | 40pcs | — | — | — | — | — | — | — | — | ||||||||||
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Chip K155LA4
#754
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21231 | СНГ | 346 шт |
6 грн.
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3 logical elements 3I-NOT. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
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Zener diode D816A
#11967
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24256 | СНГ | 346 шт |
6 грн.
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Medium power silicon zener diode, 22V | 4.2 | — | — | — | Screw | — | — | — | — | — | — | — | 5Вт | 100 pieces. | — | — | — | — | 22V | ks620 | — | — | ||||||||||
| 20353 | ALPHA OMEGA SEMICONDUCTOR | 345 шт |
6 грн.
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0.1 | — | — | — | SMD | — | — | — | — | — | Protective | — | 125Вт | 3000pcs | — | — | — | — | — | — | 5V | assembly | ||||||||||||
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Chip K170AP2V
#5699
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21668 | СНГ | 344 шт |
6 грн.
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The K170AP2V microcircuit consists of 2 signal conditioners for communication lines of data transmission equipment. | 0.5 | DIP8 | — | — | DIP | — | — | — | — | Logics | — | — | — | 200pcs | — | — | — | — | — | — | — | — | ||||||||||
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Chip KR1561PU4
#9818
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21407 | СНГ | 342 шт |
6 грн.
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Six level converters. | 1.1 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
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Transistor MP116
#11961
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24250 | СНГ | 339 шт |
10 грн.
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Transistors MP116 silicon alloyed pnp amplifying low-frequency with non-normalized noise factor. Designed to amplify low frequency signals. | 1.5 | — | КТЮ-3-6 | Bipolar | DIP | — | — | — | — | — | — | PNP | 150мВт | 100 pieces. | 15В | 10мА | 0,5МГц | 100 | — | — | — | — | ||||||||||
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Zener diode BZX55C 2V4
#4184
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20209 | Rectron Semiconductor | 338 шт |
1 грн.
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Zener diode 2.4V 0.5W (BZX55C 2V4) | 0.12 | — | — | — | DIP | — | — | — | — | — | — | — | 500мВт | 500pcs | — | — | — | — | 2V4 | DO-35 | — | — | ||||||||||
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Zener diode KS126D1
#11427
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23544 | СНГ | 335 шт |
1 грн.
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Zener diode 5.1V 0.45W. | 0.2 | — | — | — | DIP | — | — | — | — | — | — | — | 450мВт | 500pcs | — | — | — | — | 5V1 | kd2 | — | — | ||||||||||
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Chip K131LA2
#8399
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22111 | СНГ | 331 шт |
6 грн.
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Logic element 8I-NOT | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
| 20166 | YFW | 330 шт |
6 грн.
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1000V 10A | 1.8 | — | — | — | DIP | R-6 | 1000V | 10A | — | — | Rectifier | — | — | 500pcs | — | — | — | — | — | — | — | single | |||||||||||
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Chip K561IE14
#725
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21423 | СНГ | 327 шт |
6 грн.
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Binary/BCD 4-digit up/down counter with preset. | 1.1 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | — | ||||||||||
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Transistor P216A
#14714
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26932 | СНГ | 327 шт |
15 грн.
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The main technical characteristics of the P216A transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 30 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 40 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 7.5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.5 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 20... 80; • Rke us - Saturation resistance between collector and emitter: no more than 0.2 Ohm. | 10 | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 30Вт | 20pcs | 40В | 7,5A | 0,1МГц | 80 | — | — | — | — | ||||||||||
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Transistor P605A
#11215
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23349 | СНГ | 326 шт |
15 грн.
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Transistor germanium structure pnp universal. Designed for use in amplifying, generator and pulse stages of low and high frequencies up to 30 MHz. | 9.2 | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 3Вт | 50pcs | 40В | 1.5А | 30МГц | 120 | — | — | — | — | ||||||||||
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Transistor MP103A
#13712
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25876 | СНГ | 326 шт |
5 грн.
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Transistor MP103A germanium alloyed npn amplifying low-frequency with non-normalized noise factors. Designed to amplify low frequency signals. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | NPN | 100мВт | 100 pieces. | 10В | 100мА | 1МГц | 30 | — | — | — | — | ||||||||||
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Diode bridge KTS402I
#15988
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28222 | СНГ | 326 шт |
20 грн.
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A block of silicon, diffusion diodes. Main technical characteristics of the diode KTS402I: • Uobr and max - Maximum pulse reverse voltage: 500 V; • Inp max - Maximum forward current: 600 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - DC reverse current: no more than 125 µA at Uobr 500 V. | 5.7 | — | — | — | DIP | — | 500V | 600mA | — | — | Diode bridge | — | — | 150pcs | — | — | — | — | — | — | — | — | |||||||||||
| 20416 | ON SEMICONDUCTOR | 325 шт |
2 грн.
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0.1 | — | SOT23 | Bipolar | SMD | — | — | — | — | — | — | PNP | 350мВт | 3000pcs | 150В | 600мА | — | 240 | — | — | — | — | ||||||||||||
| 21888 | СНГ | 325 шт |
6 грн.
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Four-bit 2-1 tristate selector with inverted outputs. | 1 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | — | |||||||||||
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Diode S1M
#15204
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27444 | TOSHIBA | 324 шт |
1 грн.
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0.3 | — | — | — | SMD | SMA | 1000V | 1A | — | — | Rectifier | — | — | 2000pcs | — | — | — | — | — | — | — | single |