Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Appointment | Diode type | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Breakdown voltage | Diode design |
|---|
Diode bridge KTS405I
#14128
|
26309 | СНГ | 417 шт |
7 грн.
|
The main technical characteristics of the KTS405I diode: • Uopp max - Maximum direct reverse voltage: 500 V; • Inp max - Maximum forward current: 600 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 600 mA; • Iobr - Constant reverse current: no more than 125 μA at Uobr 500 V. | 5.2 | — | — | — | DIP | — | 500V | 600mA | — | — | Diode bridge | — | — | — | — | 500pcs | — | — | — | — | — | — | — | — | |||||||||
Diode SS10P6HM3
#16773
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29019 | VISHAY | 414 шт |
22 грн.
|
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Diode SS10P6HM3. | 0.3 | — | — | — | SMD | SMPC (TO-277A) | 60V | 7А | 280A | — | Schottky | — | — | — | — | 6500шт. | — | — | — | — | — | — | — | single | ||||||||
Chip KR556RT5
#693
|
22216 | СНГ | 413 шт |
12 грн.
|
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4096-bit (512x8) open-collector programmable read-only memory with one-time electrical programming by jumper burnout. | 4 | DIP24 | — | — | DIP | — | — | — | — | Memory | — | — | — | — | — | 120pcs | — | — | — | — | — | — | — | — | ||||||||
Transistor KT6114V (=SS8050)
#10102
|
21840 | INTEGRAL | 413 шт |
3 грн.
|
|
0.3 | — | TO92 | Bipolar | DIP | — | — | — | — | — | — | NPN | — | — | 1Вт | 1000pcs | 25В | 1.5А | 100МГц | 80 | — | — | — | — | |||||||||
| 25106 | ST MICROELECTRONICS | 410 шт |
2 грн.
|
|
0.12 | — | — | — | SMD | SOT-23 | — | — | — | — | Protective | — | — | — | 300Вт | 3000pcs | — | — | — | — | — | — | 15.8V | double common anode | ||||||||||
Chip KR580VI53D
#9895
|
21689 | СНГ | 409 шт |
18 грн.
|
|
A three-channel programmable device for time intervals (timer) designed to organize the operation of microprocessor systems in real time. Implemented as three independent 16-bit channels with a common control scheme. | 3.5 | DIP24 | — | — | DIP | — | — | — | — | Timers | — | — | — | — | — | 36pcs | — | — | — | — | — | — | — | — | ||||||||
Transistor KT520A (=MPSA42)
#10101
|
21839 | INTEGRAL | 409 шт |
3 грн.
|
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0.3 | — | TO92 | Bipolar | DIP | — | — | — | — | — | — | NPN | — | — | 625мВт | 1000pcs | 300В | 500мА | 50МГц | 40 | — | — | — | — | |||||||||
Diode KD202Zh
#13737
|
25905 | СНГ | 409 шт |
7 грн.
|
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The main technical characteristics of the KD202Zh diode: • Uobr and max - Maximum impulse reverse voltage: 300 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 µA at Uobr 300 V. | 4.5 | — | — | — | Screw | КДЮ-11 | 210V | 5A | — | — | Rectifier | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | single | ||||||||
Zener diode BZX85C10V
#10075
|
21812 | FAIRCHILD SEMICONDUCTOR | 401 шт |
2 грн.
|
|
0.2 | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 1Вт | 1000pcs | — | — | — | — | 10V | DO-41 | — | — | |||||||||
Transistor MP103
#13682
|
25841 | СНГ | 398 шт |
5 грн.
|
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Transistor MP103 germanium alloyed npn amplifying low-frequency with non-normalized noise factors. Designed to amplify low frequency signals. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | NPN | — | — | 100мВт | 100 pieces. | 10В | 100мА | 1МГц | 45 | — | — | — | — | ||||||||
Diode bridge KTS402D
#14368
|
26578 | СНГ | 398 шт |
15 грн.
|
Block of silicon, diffusion diodes. The main technical characteristics of the KTs402D diode: • Uobr and max - Maximum impulse reverse voltage: 200 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 µA at Uobr 200 V. | 5.7 | — | — | — | DIP | — | 200V | 1A | — | — | Diode bridge | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | |||||||||
Transistor KT6115V (=SS8550)
#10106
|
21845 | INTEGRAL | 397 шт |
3 грн.
|
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0.3 | — | TO92 | Bipolar | DIP | — | — | — | — | — | — | PNP | — | — | 1Вт | 1000pcs | 25В | 1.5А | 100МГц | 300 | — | — | — | — | |||||||||
Diode HER308
#17233
|
29486 | DC COMPONENTS | 396 шт |
5 грн.
|
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1 | — | — | — | DIP | DO-27 | 1000V | 3.0A | — | — | Fast | — | — | — | — | 1000pcs | — | — | — | — | — | — | — | single | |||||||||
Diode bridge KTS402Zh
#11585
|
23816 | СНГ | 394 шт |
15 грн.
|
Block of silicon, diffusion diodes. The main technical characteristics of the KTs402Zh diode: • Uobr and max - Maximum impulse reverse voltage: 600 V; • Inp max - Maximum forward current: 600 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 600 mA; • Iobr - Constant reverse current: no more than 125 µA at Uobr 600 V. | 5.7 | — | — | — | DIP | — | 600V | 600mA | — | — | Diode bridge | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | |||||||||
| 25108 | INTERNATIONAL RECTIFIER | 393 шт |
3 грн.
|
|
0.1 | — | SOT23 | Field | SMD | — | — | — | — | — | — | MOS p-channel | 30В | 750мА | 540мВт | 3000pcs | — | — | — | — | — | — | — | — | ||||||||||
| 26191 | СНГ | 392 шт |
8 грн.
|
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Medium power silicon zener diode, 82V. The main technical parameters of the Zener diode D817V: • Stabilization voltage spread: 74... 90 V at Ist 50 mA; • Temperature coefficient of stabilization voltage: 0.14%/°С; • Temporary stabilization voltage instability: ± 6%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 45 Ohm; • Minimum allowable stabilization current: 5 mA; • Maximum allowable stabilization current: 60 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 4.2 | — | — | — | Screw | — | — | — | — | — | — | — | — | — | 5Вт | 100 pieces. | — | — | — | — | 82V | ks620 | — | — | |||||||||
Chip K511PU2
#843
|
21435 | СНГ | 391 шт |
6 грн.
|
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Low-to-high converter: two 2NAND gates and two AND-spread NOT gates. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Transistor KT817B
#12236
|
24615 | СНГ | 389 шт |
10 грн.
|
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Transistor KT817B silicon mesa-epitaxial-planar structure npn amplifying. | 0.7 | — | TO126 | Bipolar | DIP | — | — | — | — | — | — | NPN | — | — | 25Вт | 200pcs | 45В | 3А | 3МГц | 40 | — | — | — | — | ||||||||
Zener diode KS407D
#10375
|
22382 | СНГ | 387 шт |
2 грн.
|
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Silicon zener diode, planar, medium power. | 0.1 | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 340мВт | 400pcs | — | — | — | — | 6V8 | kd2 | — | — | ||||||||
Diode BYV26C
#16605
|
28884 | VISHAY | 386 шт |
12 грн.
|
|
0.4 | — | — | — | DIP | SOD-57 | 600V | 1A | — | — | Fast | — | — | — | — | 5000pcs | — | — | — | — | — | — | — | single | |||||||||
Triac BT138-600E
#5613
|
21126 | NXP | 385 шт |
20 грн.
|
|
2.8 | — | — | — | DIP | TO-220AB | 600V | 12A | — | — | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | |||||||||
Chip K511LA2
#816
|
22275 | СНГ | 382 шт |
6 грн.
|
|
Three logical elements 3I-NOT. | 1.5 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
| 28255 | FAIRCHILD SEMICONDUCTOR | 381 шт |
2 грн.
|
|
Zener diode BZX85V033 33V 1.3A. | 0.2 | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 1.3Вт | 1000pcs | — | — | — | — | 33V | DO-41 | — | — | |||||||||
Optocoupler MOC207
#16534
|
28782 | ON SEMICONDUCTOR | 380 шт |
22 грн.
|
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0.17 | SO8 | — | — | SMD | — | — | — | — | — | — | — | — | — | — | 2500pcs | — | — | — | — | — | — | — | — | |||||||||
Chip K555TL2
#9544
|
21698 | СНГ | 379 шт |
4 грн.
|
|
Six trigger Schmitt inverters | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Chip K561CA1A
#3949
|
21409 | СНГ | 377 шт |
6 грн.
|
|
Digital microcircuit of the CMOS series. The K561CA1A chip is a twelve-bit comparison circuit (12-bit parity controller). Contains 224 integral elements. Housing type 238.16-1, weight no more than 1.5 g. | 1.1 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | — | 90pcs | — | — | — | — | — | — | — | — | ||||||||
Transistor KT853V
#13954
|
26134 | СНГ | 377 шт |
12 грн.
|
|
Transistors KT853V silicon planar structures pnp switching. Designed for use in amplifiers and switching devices. The main technical characteristics of the transistor KT853V: • Transistor structure: pnp; • Рк t max - Constant power dissipation of the collector with a heat sink: 60 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 7 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 60 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V; • Ik max - Maximum allowable DC collector current: 8 A; • Ik and max - The maximum allowable collector pulse current: 12 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 200 μA (60V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 750; • Sk - Collector junction capacitance: no more than 120 pF; • Rke us - Saturation resistance between collector and emitter: no more than 0.66 Ohm; • toff - Turn-off time:: no more than 3300 ns | 2 | — | TO220 | Bipolar | DIP | — | — | — | — | — | — | PNP | — | — | 60Вт | 100 pieces. | 60В | 8А | 7МГц | 750 | — | — | — | — | ||||||||
Chip KM155LA2
#3939
|
21239 | СНГ | 376 шт |
5 грн.
|
|
Logic element 8I-NOT. | 1.2 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Diode Bridge KBPC810
#9857
|
21636 | SEP | 376 шт |
18 грн.
|
|
(1000V;8.0A) | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Chip KR525PS1A
#16410
|
28657 | СНГ | 376 шт |
12 грн.
|
|
Multiplier/divider KR525PS1A (Kvazar-IS) 4-square analogue. signal multiplier (AD532), DIP14 Characteristics: 1. Multiplication error with external adjustment: 2% 2. Nonlinearity of multiplication across inputs X and Y: 2% 3. Residual voltage at input X: 50 mV 4. Residual voltage at input Y: 100 mV 5. Displacement EMF at inputs X and Y: 500 mV 6.Maximum output differential voltage: ±12V 7. Maximum common mode voltage on X and Y inputs: ±11.5K 8. Current consumption: 4.6mA 9. Input current for X and Y inputs: 8 µA 10. Input current difference between inputs X and Y: 1 µA 11. Output current difference: 50 µA. | 1 | DIP14 | — | — | DIP | — | — | — | — | ADC | — | — | — | — | — | 400pcs | — | — | — | — | — | — | — | — |
