Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Appointment | Diode type | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Diode design |
|---|
Chip KR580VI53D
#9895
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21689 | СНГ | 407 шт |
25 грн.
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A three-channel programmable device for time intervals (timer) designed to organize the operation of microprocessor systems in real time. Implemented as three independent 16-bit channels with a common control scheme. | 3.5 | DIP24 | — | — | DIP | — | — | — | Timers | — | — | — | — | — | 36pcs | — | — | — | — | — | — | — | ||||||||||
Diode KD202Zh
#13737
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25905 | СНГ | 402 шт |
7 грн.
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The main technical characteristics of the KD202Zh diode: • Uobr and max - Maximum impulse reverse voltage: 300 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 µA at Uobr 300 V. | 4.5 | — | — | — | Screw | КДЮ-11 | 210V | 5A | — | Rectifier | — | — | — | — | 100 pieces. | — | — | — | — | — | — | single | ||||||||||
Zener diode BZX85C10V
#10075
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21812 | FAIRCHILD SEMICONDUCTOR | 401 шт |
2 грн.
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0.2 | — | — | — | DIP | — | — | — | — | — | — | — | — | 1Вт | 1000pcs | — | — | — | — | 10V | DO-41 | — | |||||||||||
Transistor MP103
#13682
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25841 | СНГ | 398 шт |
5 грн.
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Transistor MP103 germanium alloyed npn amplifying low-frequency with non-normalized noise factors. Designed to amplify low frequency signals. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 100мВт | 100 pieces. | 10В | 100мА | 1МГц | 45 | — | — | — | ||||||||||
Diode bridge KTS402D
#14368
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26578 | СНГ | 398 шт |
15 грн.
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Block of silicon, diffusion diodes. The main technical characteristics of the KTs402D diode: • Uobr and max - Maximum impulse reverse voltage: 200 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 µA at Uobr 200 V. | 5.7 | — | — | — | DIP | — | 200V | 1A | — | Diode bridge | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||||||
Transistor BC546B
#2229
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21821 | FAIRCHILD SEMICONDUCTOR | 397 шт |
1 грн.
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0.25 | — | TO92 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 500мВт | 1000pcs | 65В | 100мА | — | 200 | — | — | — | |||||||||||
Transistor KT6115V (=SS8550)
#10106
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21845 | INTEGRAL | 397 шт |
3 грн.
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0.3 | — | TO92 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 1Вт | 1000pcs | 25В | 1.5А | 100МГц | 300 | — | — | — | |||||||||||
Diode bridge KTS402Zh
#11585
|
23816 | СНГ | 394 шт |
15 грн.
|
Block of silicon, diffusion diodes. The main technical characteristics of the KTs402Zh diode: • Uobr and max - Maximum impulse reverse voltage: 600 V; • Inp max - Maximum forward current: 600 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 600 mA; • Iobr - Constant reverse current: no more than 125 µA at Uobr 600 V. | 5.7 | — | — | — | DIP | — | 600V | 600mA | — | Diode bridge | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||||||
| 25108 | INTERNATIONAL RECTIFIER | 393 шт |
3 грн.
|
|
0.1 | — | SOT23 | Field | SMD | — | — | — | — | — | MOS p-channel | 30В | 750мА | 540мВт | 3000pcs | — | — | — | — | — | — | — | ||||||||||||
| 26191 | СНГ | 392 шт |
8 грн.
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Medium power silicon zener diode, 82V. The main technical parameters of the Zener diode D817V: • Stabilization voltage spread: 74... 90 V at Ist 50 mA; • Temperature coefficient of stabilization voltage: 0.14%/°С; • Temporary stabilization voltage instability: ± 6%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 45 Ohm; • Minimum allowable stabilization current: 5 mA; • Maximum allowable stabilization current: 60 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 4.2 | — | — | — | Screw | — | — | — | — | — | — | — | — | 5Вт | 100 pieces. | — | — | — | — | 82V | ks620 | — | |||||||||||
Chip K511PU2
#843
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21435 | СНГ | 391 шт |
6 грн.
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Low-to-high converter: two 2NAND gates and two AND-spread NOT gates. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||||
Zener diode KS407D
#10375
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22382 | СНГ | 387 шт |
2 грн.
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Silicon zener diode, planar, medium power. | 0.1 | — | — | — | DIP | — | — | — | — | — | — | — | — | 340мВт | 400pcs | — | — | — | — | 6V8 | kd2 | — | ||||||||||
Diode HER308
#17233
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29486 | DC COMPONENTS | 386 шт |
5 грн.
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1 | — | — | — | DIP | DO-27 | 1000V | 3.0A | — | Fast | — | — | — | — | 1000pcs | — | — | — | — | — | — | single | |||||||||||
Triac BT138-600E
#5613
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21126 | NXP | 385 шт |
20 грн.
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2.8 | — | — | — | DIP | TO-220AB | 600V | 12A | — | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | |||||||||||
Chip K511LA2
#816
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22275 | СНГ | 382 шт |
6 грн.
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Three logical elements 3I-NOT. | 1.5 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||||
| 28255 | FAIRCHILD SEMICONDUCTOR | 381 шт |
2 грн.
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Zener diode BZX85V033 33V 1.3A. | 0.2 | — | — | — | DIP | — | — | — | — | — | — | — | — | 1.3Вт | 1000pcs | — | — | — | — | 33V | DO-41 | — | |||||||||||
Optocoupler MOC207
#16534
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28782 | ON SEMICONDUCTOR | 380 шт |
22 грн.
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0.17 | SO8 | — | — | SMD | — | — | — | — | — | — | — | — | — | 2500pcs | — | — | — | — | — | — | — | |||||||||||
Chip K561CA1A
#3949
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21409 | СНГ | 377 шт |
6 грн.
|
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Digital microcircuit of the CMOS series. The K561CA1A chip is a twelve-bit comparison circuit (12-bit parity controller). Contains 224 integral elements. Housing type 238.16-1, weight no more than 1.5 g. | 1.1 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 90pcs | — | — | — | — | — | — | — | ||||||||||
Transistor KT853V
#13954
|
26134 | СНГ | 377 шт |
12 грн.
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Transistors KT853V silicon planar structures pnp switching. Designed for use in amplifiers and switching devices. The main technical characteristics of the transistor KT853V: • Transistor structure: pnp; • Рк t max - Constant power dissipation of the collector with a heat sink: 60 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 7 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 60 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V; • Ik max - Maximum allowable DC collector current: 8 A; • Ik and max - The maximum allowable collector pulse current: 12 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 200 μA (60V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 750; • Sk - Collector junction capacitance: no more than 120 pF; • Rke us - Saturation resistance between collector and emitter: no more than 0.66 Ohm; • toff - Turn-off time:: no more than 3300 ns | 2 | — | TO220 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 60Вт | 100 pieces. | 60В | 8А | 7МГц | 750 | — | — | — | ||||||||||
Chip KM155LA2
#3939
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21239 | СНГ | 376 шт |
5 грн.
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Logic element 8I-NOT. | 1.2 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||||
Diode BYV26C
#16605
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28884 | VISHAY | 376 шт |
12 грн.
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0.4 | — | — | — | DIP | SOD-57 | 600V | 1A | — | Fast | — | — | — | — | 5000pcs | — | — | — | — | — | — | single | |||||||||||
Zener diode BZX55C 7V5
#4197
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20226 | Rectron Semiconductor | 375 шт |
1 грн.
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Zener diode 7.5V 0.5W (BZX55C 7V5) | 0.12 | — | — | — | DIP | — | — | — | — | — | — | — | — | 500мВт | 500pcs | — | — | — | — | 7V5 | DO-35 | — | ||||||||||
Diode 2D503A (=KD503A)
#3474
|
24038 | СНГ | 373 шт |
3 грн.
|
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Designed for use as switching elements in high-speed impulse devices of the nanosecond range. Are issued in the glass case with flexible conclusions. | 0.25 | — | — | — | DIP | КД-121 | 30V | 20mA | — | Pulse | — | — | — | — | 100 pieces. | — | — | — | — | — | — | single | ||||||||||
Chip KM155LA1
#3937
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25741 | СНГ | 369 шт |
6 грн.
|
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2 logical elements 4I-NOT. | 1.2 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||||
Chip K555TL2
#9544
|
21698 | СНГ | 369 шт |
8 грн.
|
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Six trigger Schmitt inverters | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||||
Triac KU208G
#3413
|
28505 | СНГ | 367 шт |
25 грн.
|
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Silicon triac, planar, pnpn structures, triode, non-lockable, symmetrical. | 11 | — | — | — | Screw | — | 400V | 5A | — | — | — | — | — | — | 40pcs | — | — | — | — | — | — | — | ||||||||||
Chip KR556RT5
#693
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22216 | СНГ | 363 шт |
12 грн.
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4096-bit (512x8) open-collector programmable read-only memory with one-time electrical programming by jumper burnout. | 4 | DIP24 | — | — | DIP | — | — | — | Memory | — | — | — | — | — | 120pcs | — | — | — | — | — | — | — | ||||||||||
Dinistor LLDB3
#9218
|
20619 | — | 363 шт |
1.30 грн.
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— | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||||
Chip KR556RT4
#889
|
21939 | СНГ | 360 шт |
6 грн.
|
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1024-bit (256x4) open-collector programmable read-only memory. Information is recorded in the PROM (programming) by the consumer by burning nichrome jumpers with a current pulse 1 time during the operation of the IC | 1.3 | DIP16 | — | — | DIP | — | — | — | Memory | — | — | — | — | — | 90pcs | — | — | — | — | — | — | — | ||||||||||
Chip KR580VN59
#7363
|
21687 | СНГ | 356 шт |
10 грн.
|
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Programmable interrupt controller. Handles up to 8 microprocessor interrupt requests from external devices. The IS provides for the possibility of expanding the number of serviced requests up to 64 by means of its cascade connection. Allows you to reduce the software and time spent on interrupts in systems with multiple priority levels. | 3.5 | DIP28 | — | — | DIP | — | — | — | Microcontrollers | — | — | — | — | — | 36pcs | — | — | — | — | — | — | — |
