Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Diode design |
|---|
Zener diode 1N5383B (150V)
#10340
|
22327 | DIOTEC SEMICONDUCTOR | 239 шт |
6.50 грн.
|
|
1.5 | — | — | — | DIP | — | — | — | — | — | — | — | 5Вт | 500pcs | — | — | — | — | 150V | do201 | — | |||||||||
Chip KR531IK2 (=SN74S381N)
#14342
|
26550 | СНГ | 239 шт |
10 грн.
|
|
Arithmetic logic unit. | 3 | DIP24 | — | — | DIP | — | — | — | — | Logics | — | — | — | 36pcs | — | — | — | — | — | — | — | ||||||||
Chip KM155LR3
#979
|
21342 | СНГ | 238 шт |
4 грн.
|
|
Logical element 2-2-2-3I-4OR-NOT with the possibility of expansion by OR. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Zener diode BZX55C 3V9
#4189
|
20216 | Rectron Semiconductor | 238 шт |
1 грн.
|
|
Zener diode 3.9V 0.5W (BZX55C 3V9) | 0.12 | — | — | — | DIP | — | — | — | — | — | — | — | 500мВт | 500pcs | — | — | — | — | 3V9 | DO-35 | — | ||||||||
Zener diode TL431A
#8692
|
20403 | CHINA | 237 шт |
2.50 грн.
|
|
0.3 | — | — | — | DIP | — | — | — | — | — | — | — | 700мВт | 500pcs | — | — | — | — | 37V | TO-92 | — | |||||||||
Chip 74HC374D
#10077
|
21814 | PHILIPS | 236 шт |
10 грн.
|
|
Octal D-type flip-flop; positive edge-trigger; 3-state /Eight D flip-flops | 1 | SO20 | — | — | SMD | — | — | — | — | Logics | — | — | — | 1000pcs | — | — | — | — | — | — | — | ||||||||
Diode 1N5817
#11093
|
23060 | MIC | 236 шт |
1 грн.
|
|
0.25 | — | — | — | DIP | DO-41 | 20V | 1A | — | — | Schottky | — | — | 1000pcs | — | — | — | — | — | — | single | |||||||||
Zener diode BZX55C 2V2
#4217
|
20213 | Rectron Semiconductor | 235 шт |
1 грн.
|
|
Zener diode 2.2V 0.5W (BZX55C 2V2) | 0.12 | — | — | — | DIP | — | — | — | — | — | — | — | 500мВт | 500pcs | — | — | — | — | 2V2 | DO-35 | — | ||||||||
Chip K176LA8
#8379
|
22296 | СНГ | 235 шт |
4 грн.
|
|
2 logical elements 4I-NOT. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Chip KR531LA2 (=SN74S30)
#9892
|
21681 | СНГ | 234 шт |
6 грн.
|
|
One eight-input NAND element. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Diode KD203A
#16286
|
28533 | СНГ | 232 шт |
35 грн.
|
|
Main technical characteristics of the KD203A diode: • Uobp max - Maximum constant reverse voltage: 420 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - Constant forward voltage: no more than 1 V at Inp 10 A; • Iobp - Constant reverse current: no more than 1500 µA at Uobp 600 V. | 12 | — | — | — | Screw | — | 420V | 10A | 30A | — | Rectifier | — | — | 25pcs | — | — | — | — | — | — | single | ||||||||
Chip K155TV1
#955
|
21271 | СНГ | 231 шт |
6 грн.
|
|
Integrated circuit of the TTL series. K155TV1 microcircuits are a JK flip-flop with logic at the input of the RFG. Contains 55 integral elements. Housing type 201.14-1, weight no more than 1 g. Maximum permissible operating modes: - Supply voltage .......... 4.75 - 5.25 V - Low level input voltage .......... - High level input voltage .......... > 2.4V - Low level input current .......... - High level output current .......... - Load capacity .......... - The duration of the front and cut of the input pulse - Ambient temperature: - K155 .......... -10 + 70 °С - KM155 ......... - 45 + 85 ° С | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Transistor P214
#14712
|
26930 | СНГ | 230 шт |
15 грн.
|
|
The main technical characteristics of the P214 transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 10 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 60 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.3 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 20...60; • Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm. | 10 | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 10Вт | 20pcs | 55В | 5А | 0,15МГц | 60 | — | — | — | ||||||||
Transistor KT3130G9
#14527
|
26743 | INTEGRAL | 229 шт |
4 грн.
|
|
0.1 | — | SOT23 | Bipolar | SMD | — | — | — | — | — | — | NPN | 100мВт | 1000pcs | 15В | 100мА | 150МГц | 1000 | — | — | — | |||||||||
Thyristor KU201V
#13690
|
25849 | СНГ | 228 шт |
10 грн.
|
• Maximum DC reverse voltage: 50 V; • Maximum DC voltage in closed state: 50 V; • Maximum repetitive pulse current in the open state: 30 A; • Repetitive pulse current in the open state: 2 A; • Open state voltage: 2 V; • Direct current in the closed state: no more than 5 mA; • Constant reverse current: no more than 5 mA; • Unlocking direct control current: no more than 100 mA; • Constant unlocking control voltage: no more than 6 V; • Voltage slew rate in closed state: 5 V/µs; • Turn-on time: no more than 10 microseconds; • Turn-off time: no more than 100 microseconds; • Working range of ambient temperature: -60... +125 °С. | 11 | — | — | — | Screw | — | 50V | — | 30A | — | — | — | — | 40pcs | — | — | — | — | — | — | — | |||||||||
Diode PMEG4005ET
#16515
|
28763 | Nexperia | 228 шт |
4 грн.
|
|
0.043 | — | — | — | SMD | SOT-23 | 40V | 500mA | — | — | Schottky | — | — | 3000pcs | — | — | — | — | — | — | single | |||||||||
| 25721 | СНГ | 227 шт |
6 грн.
|
|
2 logical elements 4I-NOT. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||||
Transistor GT346A
#12505
|
24839 | СНГ | 227 шт |
7 грн.
|
|
GT346A transistors are amplifying germanium epitaxial-planar structures pnp with a normalized noise figure at frequencies of 800 and 200 MHz. Designed for use in television channel selectors of meter and decimeter wavelength ranges with automatic gain control. | 0.4 | — | КТ-1 | Bipolar | DIP | — | — | — | — | — | — | PNP | 50мВт | 1000pcs | 15В | 10мА | 700МГц | 150 | — | — | — | ||||||||
Transistor P216V
#14716
|
26934 | СНГ | 227 шт |
15 грн.
|
|
The main technical characteristics of the P216V transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 24 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 35 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 7.5 A; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 2 mA; • h21Э - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: more than 30; • Rke us - Saturation resistance between collector and emitter: no more than 0.25 Ohm. | 10 | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 24Вт | 20pcs | 30В | 7,5A | 0,1МГц | 30 | — | — | — | ||||||||
Diode D101A flat terminals
#15804
|
28041 | СНГ | 224 шт |
3 грн.
|
|
Diodes D101A silicon, point, universal. Designed to work in TV video channels, in AGC systems and discriminators of FM and AM receivers. | 0.9 | — | — | — | DIP | — | 75V | 30mA | — | — | Rectifier | — | — | 500pcs | — | — | — | — | — | — | single | ||||||||
Chip K555LI1
#797
|
21387 | СНГ | 222 шт |
5 грн.
|
|
Four logical elements 2I. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Chip K176TM1
#918
|
21874 | СНГ | 222 шт |
5 грн.
|
|
2 D-flip-flops with zero setting. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Transistor DXG40N65HSEU
#17079
|
29322 | DAXIN | 222 шт |
80 грн.
|
|
Transistor DXG40N65HSEU. | 6 | — | TO247 | IGBT | DIP | — | — | — | — | — | — | — | — | 30pcs | 650В | 40А | — | — | — | — | — | ||||||||
Diode RL207
#4261
|
20131 | DC COMPONENTS | 221 шт |
1.60 грн.
|
|
Diode 2A 1000V | 0.4 | — | — | — | DIP | DO-15 | 1000V | 2A | — | — | Rectifier | — | — | 1000pcs | — | — | — | — | — | — | single | ||||||||
Transistor KT801B
#3436
|
21835 | СНГ | 220 шт |
15 грн.
|
|
NPN structure Max. e.g. k-b at a given reverse current to and open circuit e. (Ukbo max), V 60 Max. e.g. k-e at a given current to and a given resist. in the B-e circuit. (Uker max), V 60 The maximum allowable current to (Ik max, A) 2 Static current transfer coefficient h21e min 30 Limiting frequency of the current transfer coefficient fgr, MHz 10.00 Maximum dissipated power k (Pk, W) 5 Housing KTYu-3-9 | 3.5 | — | КТЮ-3-9 | Bipolar | DIP | — | — | — | — | — | — | NPN | 5Вт | 25pcs | 60В | 2А | 10МГц | 30 | — | — | — | ||||||||
Chip KM155ID4
#4074
|
22232 | СНГ | 218 шт |
6 грн.
|
|
Dual decoder-demultiplexer 2-4. | 1.5 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Transistor MP113A
#13537
|
25665 | СНГ | 218 шт |
5 грн.
|
|
Transistor MP113A germanium alloyed npn amplifying low-frequency with non-normalized noise factors. Designed to amplify low frequency signals. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | NPN | 150мВт | 100 pieces. | 10В | 100мА | 1МГц | 120 | — | — | — | ||||||||
Diode D206
#13706
|
25869 | СНГ | 216 шт |
4 грн.
|
|
Diodes D206 silicon, alloy. Designed to convert alternating voltage with a frequency of up to 1 kHz The main technical characteristics of the diode D206: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 100 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 100 mA; • Iobr - Constant reverse current: no more than 50 μA at Uobr 100 V. | 1 | — | — | — | DIP | КД-9 | 100V | 50mA | — | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | single | ||||||||
Chip K155AG3
#942
|
21263 | СНГ | 214 шт |
12 грн.
|
|
The K155AG3 microcircuits are a dual re-start single vibrator. | 1.3 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | ||||||||
| 21906 | СНГ | 214 шт |
6 грн.
|
|
Synchronous four-charge ten-day reversible counter. | 1 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — |
