Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Breakdown voltage | Diode design |
|---|
Chip K176LP4
#919
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21884 | СНГ | 213 шт |
6 грн.
|
|
Two three-input NOR elements and one single-input inverter. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Chip K176TV1
#9507
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21879 | СНГ | 213 шт |
5 грн.
|
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2 JK type triggers. | 1 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | — | ||||||||
Chip KM555ID4
#7380
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21696 | СНГ | 212 шт |
5 грн.
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Dual decoder-multiplexer 2-4. | 1.2 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Diode KD202K
#14038
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26217 | СНГ | 212 шт |
8 грн.
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Diodes KD202K silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 5 kHz. The main technical characteristics of the KD202K diode: • Uobr and max - Maximum impulse reverse voltage: 400 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 μA at Uobr 400 V | 4.5 | — | — | — | Screw | КДЮ-11 | 280V | 5A | — | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | — | single | ||||||||
Chip KR580IR83
#7432
|
22285 | СНГ | 211 шт |
6 грн.
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Single-chip buffer 8-bit register (D-register "latch" with three output states) inverting. | 2 | DIP20 | — | — | DIP | — | — | — | — | Logics | — | — | — | 70pcs | — | — | — | — | — | — | — | — | ||||||||
Zener diode KS533A
#11421
|
23538 | СНГ | 211 шт |
6 грн.
|
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The main technical parameters of the KS533A zener diode: • Rated stabilization voltage: 33 V at Ist 10 mA; • Stabilization voltage spread: 29.7... 36.3 V; • Temperature coefficient of stabilization voltage: ±0.1%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 100 Ohm at Ist 3 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 17 mA; • Maximum allowable power dissipation on the zener diode: 0.64 W; • Working range of ambient temperature: -40... +125 °С. | 0.4 | — | — | — | DIP | — | — | — | — | — | — | — | 640мВт | 200pcs | — | — | — | — | 33V | — | — | — | ||||||||
Transistor P214B
#12365
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24700 | СНГ | 211 шт |
15 грн.
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The main technical characteristics of the P214B transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 11.5 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 60 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.15 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 20...150; • Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm. | 10 | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 11,5Вт | 20pcs | 55В | 5А | 0,15МГц | 150 | — | — | — | — | ||||||||
Transistor KT209B
#11446
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23574 | СНГ | 210 шт |
5 грн.
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0.3 | — | TO92 | Bipolar | DIP | — | — | — | — | — | — | PNP | 350мВт | 1000pcs | 15В | 350мА | — | 120 | — | — | — | — | |||||||||
Diode assembly KDS523AM
#16254
|
28501 | СНГ | 210 шт |
2 грн.
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Diode assembly, each consisting of two silicon planar epitaxial pulse diodes with separate leads. Available in a plastic case with flexible leads. | 0.25 | — | — | — | SMD | — | 50V | 20mA | 200mA | — | Pulse | — | — | 100 pieces. | — | — | — | — | — | — | — | assembly | ||||||||
| 21885 | СНГ | 209 шт |
6 грн.
|
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Four logical elements 2I-NOT. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | |||||||||
Chip K176PU1
#9503
|
21669 | СНГ | 209 шт |
5 грн.
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The logic level converter contains five inverters. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Transistor KT361K-2
#11373
|
23484 | INTEGRAL | 209 шт |
3 грн.
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0.3 | — | TO92 | Bipolar | DIP | — | — | — | — | — | — | PNP | 150мВт | 1000pcs | 60В | 100мА | 250МГц | 350 | — | — | — | — | |||||||||
Transistor KT3102AM
#10317
|
22267 | СНГ | 205 шт |
3 грн.
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0.3 | — | TO92 | Bipolar | DIP | — | — | — | — | — | — | NPN | 250мВт | 1000pcs | 50В | 200мА | — | 250 | — | — | — | — | |||||||||
Schottky diode SS14
#10466
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22489 | Panjit | 205 шт |
1.50 грн.
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0.3 | — | — | — | SMD | DO-214AC, SMA | 40V | 1A | — | — | Schottky | — | — | 1800шт. | — | — | — | — | — | — | — | single | |||||||||
Zener diode KS447A
#13967
|
26147 | СНГ | 205 шт |
5 грн.
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The main technical parameters of the KS447A zener diode: • Rated stabilization voltage: 4.7 V at Ist 43 mA; • Stabilization voltage spread: 4.23... 5.17 V; • Temperature coefficient of stabilization voltage: -0.08...+0.03%/°C; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 18 Ohm at Ist 30 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 159 mA; • Maximum allowable dissipated power on the zener diode: 1 W; • Ambient temperature operating range: -60... +100 °С | 0.8 | — | — | — | DIP | — | — | — | — | — | — | — | 1Вт | 200pcs | — | — | — | — | 4V7 | kd-8 | — | — | ||||||||
Chip KR142EN8D (=7812) 12V
#16466
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28713 | СНГ | 205 шт |
10 грн.
|
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Stabilizer with fixed output voltage 12V, 1A | 2.8 | TO-220 | — | — | DIP | — | — | — | — | Nutrition | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Chip KM155TM7
#971
|
21347 | СНГ | 204 шт |
10 грн.
|
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4 D flip-flops with direct and inverted outputs. | 1.2 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
| 20165 | VISHAY | 203 шт |
6 грн.
|
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DO-201 | 1.1 | — | — | — | DIP | DO-201AD | — | — | — | — | Protective | — | 1.5кВт | 200pcs | — | — | — | — | — | — | 68V | — | |||||||||
Chip STM6519AUARUB6F
#17148
|
29398 | ST MICROELECTRONICS | 203 шт |
30 грн.
|
|
0.06 | UDFN-6(1x1.5) | — | — | SMD | — | — | — | — | Microcontrollers | — | — | — | 3000pcs | — | — | — | — | — | — | — | — | |||||||||
Chip K131LA6
#12219
|
24596 | СНГ | 202 шт |
6 грн.
|
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2 logic elements 4I-NOT with a large output branching factor. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Thyristor KU201I
#3403
|
22421 | СНГ | 201 шт |
12 грн.
|
Maximum reverse voltage, V 200 Maximum repetitive impulse voltage in the closed state, V 200 The maximum average value of the current in the open state for the period, A 2 Maximum repetitive pulse current in the open state, A 30 Maximum voltage in the open state, V 2 The smallest constant control current required to turn on the thyristor, A 0.1 The smallest repetitive pulse control current required to turn on the thyristor, A 0.35 Trigger control voltage corresponding to the minimum DC trigger current, V 6 Triggering control voltage corresponding to the minimum pulse repetitive triggering current, V 10 Critical rate of voltage rise in the closed state, V / ms 5 Critical rate of current rise in the open state, A / ms 3 Turn-on time, ms 10 Turn-off time, ms 100 Working temperature, C -60…85 Features non-lockable | 11 | — | — | — | Screw | — | 200V | — | 30A | — | — | — | — | 40pcs | — | — | — | — | — | — | — | — | |||||||||
Chip KM555LA9
#827
|
21670 | СНГ | 200 шт |
5 грн.
|
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Four logic elements 2I-NOT with an open collector output. | 1.2 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
| 20164 | VISHAY | 200 шт |
9 грн.
|
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DO-201 | 1.1 | — | — | — | DIP | DO-201AD | — | — | — | — | Protective | — | 1.5кВт | 200pcs | — | — | — | — | — | — | 82V | — | |||||||||
Chip 500LE106 (=K500LE106)
#14311
|
26514 | СНГ | 200 шт |
12 грн.
|
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Three elements of OR-NOT. | 1.2 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | — | ||||||||
| 22350 | СНГ | 199 шт |
6 грн.
|
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A device for controlling and stabilizing the shaft speed of low-voltage DC collector micromotors with excitation from permanent magnets. | 0.5 | DIP8 | — | — | DIP | — | — | — | — | Drivers | — | — | — | 200pcs | — | — | — | — | — | — | — | — | |||||||||
Diode KD209A green
#11389
|
23500 | СНГ | 198 шт |
1 грн.
|
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Diodes KD209A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1 kHz. | 0.3 | — | — | — | DIP | КД-5А | 400V | 700mA | — | — | Rectifier | — | — | 500pcs | — | — | — | — | — | — | — | single | ||||||||
Zener diode 2S482A (=KS482A)
#15531
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27770 | СНГ | 198 шт |
6 грн.
|
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Main technical parameters of the zener diode 2S482А: • Rated stabilization voltage: 8.2 V at Ist 5 mA; • Stabilization voltage spread: 7.4... 9 V; • Temperature coefficient of stabilization voltage: 0.08 %/°C; • Zener diode stabilization voltage temporary instability: ±1.5%; • Zener diode differential resistance: 200 Ohm at Ist 1 mA; • Minimum allowable stabilization current: 1 mA; • Maximum allowable stabilization current: 96 mA; • Maximum allowable power dissipation on the zener diode: 1 W; • Working range of ambient temperature: -60... +125 °С. | 0.5 | — | — | — | DIP | — | — | — | — | — | — | — | 1Вт | 200pcs | — | — | — | — | 8V2 | kd-8 | — | — | ||||||||
Chip K561LN1
#730
|
21921 | СНГ | 196 шт |
6 грн.
|
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Six NOT gates with blocking and prohibition. | 1.1 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | 200pcs | — | — | — | — | — | — | — | — | ||||||||
Chip MAX3232CDBR
#12620
|
24925 | TEXAS INSTRUMENTS | 196 шт |
29 грн.
|
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0.4 | SSOP-16 | — | — | SMD | — | — | — | — | Interfaces | — | — | — | 2500pcs | — | — | — | — | — | — | — | — | |||||||||
Diode E115A (=KD219A)
#14494
|
26709 | СНГ | 196 шт |
15 грн.
|
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Diodes KD219A silicon, epitaxial, with a Schottky barrier. Designed for use in low-voltage secondary power supplies at frequencies of 10...200 kHz. The main technical characteristics of the diode 2KD219A: • Uobr and max - Maximum impulse reverse voltage: 15 V; • Inp max - Maximum forward current: 10 A; • Inp and max - Maximum pulse forward current: 250 A; • Unp - DC forward voltage: no more than 0.6 V at Inp 10 A; • fmax - Maximum operating frequency of the diode: 200 kHz. | 5.2 | — | — | — | Screw | КД-11 | 15V | 10A | — | — | Schottky | — | — | 100 pieces. | — | — | — | — | — | — | — | single |
