Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Breakdown voltage | Diode design |
|---|
Chip KR531AP4 (=SN74S241)
#13576
|
25722 | СНГ | 195 шт |
8 грн.
|
|
Two-channel eight-bit shaper with three output states. | 1.5 | DIP20 | — | — | DIP | — | — | — | — | Logics | — | — | — | 80pcs | — | — | — | — | — | — | — | — | ||||||||||
| 20411 | TOSHIBA | 192 шт |
1 грн.
|
|
0.3 | — | TO92 | Bipolar | DIP | — | — | — | — | — | — | PNP | 400мВт | 1000pcs | 50В | 150мА | — | 400 | — | — | — | — | ||||||||||||
| 20195 | VISHAY | 192 шт |
9 грн.
|
|
DO-201 | 1.1 | — | — | — | DIP | DO-201AD | — | — | — | — | Protective | — | 1.5кВт | 200pcs | — | — | — | — | — | — | 91V | — | |||||||||||
Transistor KT857A
#13955
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26135 | СНГ | 192 шт |
17 грн.
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Transistor KT857A silicon epitaxial-planar structure npn switching. Designed for use in amplifiers and switching devices. The main technical characteristics of the transistor KT857A: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 60 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: more than 10 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 250 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 6 V; • Ik max - Maximum allowable DC collector current: 7 A; • Ik and max - The maximum allowable collector pulse current: 10 A; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and open emitter output: no more than 5 mA (250V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 7.5; • Rke us - Saturation resistance between collector and emitter: no more than 0.33 Ohm; • tras - Resorption time: no more than 2500 ns | 2 | — | TO220 | Bipolar | DIP | — | — | — | — | — | — | NPN | 60Вт | 100 pieces. | 250В | 7А | 10МГц | 10 | — | — | — | — | ||||||||||
Chip K144IR1P
#7367
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22100 | СНГ | 190 шт |
6 грн.
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Quasi-static sequential shift register for 21 bits, consisting of three registers with the number of bits 1, 4, 16 with separate inputs, with common shift and power circuits. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Diode 1N4448
#1003
|
28488 | DIOTEC SEMICONDUCTOR | 189 шт |
1.50 грн.
|
|
200mA 100V DO-35. | 0.12 | — | — | — | DIP | DO-35 | 100V | 200mA | — | — | Pulse | — | — | 5000pcs | — | — | — | — | — | — | — | single | ||||||||||
| 23389 | FAIRCHILD SEMICONDUCTOR | 189 шт |
3 грн.
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0.4 | — | — | — | DIP | DO-15 | — | — | — | — | Protective | — | 600Вт | 1000pcs | — | — | — | — | — | — | 130V | — | ||||||||||||
Diode assembly KD205B
#14359
|
26571 | СНГ | 189 шт |
16 грн.
|
Diode assemblies KD205B, each consisting of two silicon diffusion diodes, with separate leads. Designed to convert alternating voltage with a frequency of up to 5 kHz in power supply units of radio-electronic equipment. The main technical characteristics of the KD205B diode: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 500 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 500 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 400 V | 5.7 | — | — | — | DIP | — | 400V | 500mA | — | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | — | assembly | |||||||||||
Chip K176LE6
#838
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21877 | СНГ | 188 шт |
6 грн.
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Two logical elements 4OR-NOT. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Tyranzistor KT681A
#10110
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21849 | СНГ | 186 шт |
4 грн.
|
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0.3 | — | TO92 | Bipolar | DIP | — | — | — | — | — | — | PNP | 350мВт | 1000pcs | 25В | 600мА | 120МГц | 85 | — | — | — | — | |||||||||||
Chip KR145IR1
#14429
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26638 | СНГ | 186 шт |
20 грн.
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Dynamic shift register 1024/1008 bits. | 2.8 | DIP24 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Thyristor 2U201K (=KU201K)
#16287
|
28534 | СНГ | 186 шт |
20 грн.
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• Maximum constant reverse voltage: 300 V; • Maximum constant voltage in closed state: 300 V; • Maximum repetitive pulse current in open state: 30 A; • Repetitive pulse current in open state: 2 A; • Open voltage: 2 V; • Direct current in closed state: no more than 5 mA; • Constant reverse current: no more than 5 mA; • Unlocking constant control current: no more than 100 mA; • Constant unlocking control voltage: no more than 6 V; • Rate of voltage rise in closed state: 5 V/µs; • Turn-on time: no more than 10 μs; • Turn-off time: no more than 100 μs; • Operating range of ambient temperature: -60... +125 °C. | 11 | — | — | — | Screw | — | 300V | 2A | 30A | — | — | — | — | 40pcs | — | — | — | — | — | — | — | — | |||||||||||
Transistor KT818A
#10793
|
22982 | СНГ | 185 шт |
14 грн.
|
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Transistor silicon mesaepitaxial-planar structure pnp switching. Designed for use in amplifiers and switching devices. | 2.5 | — | TO220 | Bipolar | DIP | — | — | — | — | — | — | PNP | 60Вт | 100 pieces. | 40В | 10А | 3МГц | 15 | — | — | — | — | ||||||||||
Chip SD4842P
#13673
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25809 | Silan Semiconductor | 185 шт |
20 грн.
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0.5 | DIP8 | — | — | DIP | — | — | — | — | Nutrition | — | — | — | 50pcs | — | — | — | — | — | — | — | — | |||||||||||
Transistor MP113
#13681
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25840 | СНГ | 185 шт |
5 грн.
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Transistor MP113 germanium alloyed npn amplifying low-frequency with non-normalized noise factors. Designed to amplify low frequency signals. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | NPN | 150мВт | 100 pieces. | 10В | 100мА | 1МГц | 45 | — | — | — | — | ||||||||||
Zener diode BZT52C4V7
#17009
|
29260 | DIODES INCORPORATED | 185 шт |
2 грн.
|
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0.12 | — | — | — | SMD | — | — | — | — | — | — | — | 500мВт | 3000pcs | — | — | — | — | 4V7 | SOD-123 | — | — | |||||||||||
Chip KR580VK28
#9539
|
22202 | СНГ | 184 шт |
10 грн.
|
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System controller and bus driver. | 4 | DIP28 | — | — | DIP | — | — | — | — | Interfaces | — | — | — | 36pcs | — | — | — | — | — | — | — | — | ||||||||||
Chip K561TV1A
#9817
|
21406 | СНГ | 182 шт |
4 грн.
|
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Two JK flip-flops with asynchronous RS inputs and dynamic recording control. | 1.1 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Transistor MP25B
#10816
|
23009 | СНГ | 182 шт |
6 грн.
|
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Transistor MP25B germanium alloyed pnp universal low-frequency. Designed to amplify and switch low frequency signals. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | PNP | 200мВт | 100 pieces. | 40В | 150мА | — | 80 | — | — | — | — | ||||||||||
| 25915 | СНГ | 180 шт |
20,000 грн.
|
The microminiature linear acceleration sensor DLUMM is designed to convert linear accelerations acting along the sensor sensitivity axis into an electrical signal in the form of a DC voltage, the value of which is proportional to the linear acceleration, and the sign corresponds to the direction of the linear acceleration. | 43 | — | — | — | — | — | — | — | — | — | — | — | — | 3 pcs. | — | — | — | — | — | — | — | — | ||||||||||||
| 20170 | VISHAY | 179 шт |
6 грн.
|
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DO-201 | 1.1 | — | — | — | DIP | DO-201AD | — | — | — | — | Protective | — | 1.5кВт | 200pcs | — | — | — | — | — | — | 43V | — | |||||||||||
Chip K555AP3
#10157
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22034 | СНГ | 179 шт |
6 грн.
|
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Two four-channel shapers with three states at the output with signal inversion. | 1.6 | DIP20 | — | — | DIP | — | — | — | — | Logics | — | — | — | 70pcs | — | — | — | — | — | — | — | — | ||||||||||
Transistor P216
#14713
|
26931 | СНГ | 179 шт |
15 грн.
|
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Transistors P216 germanium alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. | 10 | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 30Вт | 20pcs | 40В | 7,5A | 0,1МГц | 20 | — | — | — | — | ||||||||||
Transistor KT837E
#10809
|
22999 | INTEGRAL | 178 шт |
12 грн.
|
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Transistors silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. | 2.5 | — | TO220 | Bipolar | DIP | — | — | — | — | — | — | PNP | 30Вт | 100 pieces. | 55В | 7,5A | 1МГц | 150 | — | — | — | — | ||||||||||
| 26198 | СНГ | 178 шт |
8 грн.
|
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Medium power silicon zener diode, 6.8V The main technical parameters of the Zener diode D815B: • Stabilization voltage spread: 6.1... 7.5 V at Ist 1 A; • Temperature coefficient of stabilization voltage: 0.05%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 0.8 Ohm; • Minimum allowable stabilization current: 50 mA; • Maximum allowable stabilization current: 1.15 A; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С | 2.5 | — | — | — | Screw | — | — | — | — | — | — | — | 8Вт | 100 pieces. | — | — | — | — | 6V8 | ks620 | — | — | |||||||||||
Triac BT139-800E
#5616
|
21129 | NXP | 176 шт |
16 грн.
|
|
2.8 | — | — | — | DIP | TO-220AB | 800V | 16A | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | |||||||||||
Triac BTA12-800B
#5619
|
21132 | ST MICROELECTRONICS | 176 шт |
21 грн.
|
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2.8 | — | — | — | DIP | TO-220 | 800V | 12A | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | |||||||||||
Chip K131LA1
#5650
|
22110 | СНГ | 176 шт |
6 грн.
|
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Two logical elements 4I-NOT. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Chip K176LP1
#831
|
21913 | СНГ | 175 шт |
6 грн.
|
|
The logical element is universal. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Chip K131LA3
#3925
|
21938 | СНГ | 175 шт |
5 грн.
|
|
Chip K131LA3 is 4 logic elements 2I-NOT. Contains 56 integral elements. Housing type 201.14-1. Weight no more than 1 g. General recommendations for use: Soldering temperature (235 ± 5) С, distance from the body to the soldering point (1 ± 0.5) mm, soldering time (2 ± 0.5) s. The number of allowable soldering during installation operations 1. On microcircuits, instead of the index "K", there may be a dot. Permissible value of static potential 30 V. It is not recommended to connect any electrical signals (including the "power" and "ground" buses) to the microcircuit pins. When repairing equipment, the microcircuit should be changed only with the power sources disconnected. Free inputs must be connected to a DC voltage source of 5 V ±10% through a 1 kΩ resistor or to a DC voltage source of 4.5 V ±10%. In this case, it is allowed to connect up to 20 pins of microcircuits to one resistor. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — |
