Active radio components

Results: 8086

	MPN	Article	Brand	In stock	Price	Discounts	Quantity	Description	Weight g.	Type of shell	Transistor case type	Transistor type	Mounting type	Type of shell	Urev. max, V	Ipr. max.	Appointment	Diode type	Structure	Drain-source voltage	Drain current	Power	Factory packaging	Collector-emitter voltage	Collector current	Frequency	Current gain	Stabilization voltage	Zener diode housing type	Breakdown voltage	Diode design

Chip KR140UD1A (=UA702C)

#898

22142

СНГ

170 шт

10 грн.

10+	9,50 грн.
50+	9 грн.
100+	8 грн.

Medium-precision operational amplifier without frequency correction.

DIP14

—

DIP

—

Amplifiers

—

100 pieces.

—

Diode RU3AM (1.5A/600V 400ns)

#4275

20153

BL Galaxy Electrical

170 шт

9 грн.

100+	8,10 грн.
200+	7,20 грн.
500+	6,30 грн.

0.4

—

DIP

DO-201AD

600V

1.5A

—

Fast

—

1000pcs

—

single

Zener diode BZX55C 4V7

#4191

20207

Rectron Semiconductor

167 шт

1 грн.

50+	0,90 грн.
100+	0,80 грн.
250+	0,75 грн.

Zener diode 4.7V 0.5W (BZX55C 4V7)

0.12

—

DIP

—

500мВт

500pcs

—

4V7

DO-35

—

Diode D223A

#8891

22786

СНГ

167 шт

3 грн.

50+	2,70 грн.
200+	2,40 грн.
500+	2,10 грн.

Main technical characteristics of the D223A diode: • Uobp max - Maximum constant reverse voltage: 100 V; • Inp max - Maximum forward current: 50 mA; • Unp - Constant forward voltage: no more than 1 V at Inp 50 mA; • Iobp - Constant reverse current: no more than 1 µA at Uobp 100 V.

0.3

—

DIP

D104

100V

50mA

—

Rectifier

—

100 pieces.

—

single

Chip K176LP11

#923

21883

СНГ

166 шт

5 грн.

10+	4,75 грн.
50+	4,50 грн.
100+	4 грн.

2 logical elements 4OR-NOT and logical element NOT.

DIP14

—

DIP

—

Logics

—

100 pieces.

—

Rectifier pole KTS201G

#11218

23352

СНГ

166 шт

45 грн.

50+	40,50 грн.
200+	36 грн.
500+	31,50 грн.

A column of silicon, diffusion, avalanche diodes, pulsed. Designed to convert alternating pulsed voltage with a frequency of up to 1 kHz.

—

Screw

—

8kV

500mA

—

High voltage

—

20pcs

—

assembly

Transistor P217V

#16932

29179

СНГ

166 шт

25 грн.

10+	23,75 грн.
50+	22,50 грн.
100+	20 грн.

Main technical characteristics of the P217V transistor: • Transistor structure: pnp • Рк t max - Continuous dissipated power of the collector with heat sink: 24 W; • fh21э - Limit frequency of the transistor current transfer coefficient for circuits with a common emitter: not less than 0.1 MHz; • Uкбо проб - Collector-base breakdown voltage at a given collector reverse current and open emitter circuit: 60 V; • Uebo prob - Breakdown voltage emitter-base at a given reverse emitter current and open collector circuit: 15 V; • Iк max - Maximum permissible direct collector current: 7.5 A; • Iкбо - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 3 mA; • h21э - Static current transfer coefficient of the transistor in small signal mode for circuits with a common emitter: more than 5; • Rke nat - Saturation resistance between collector and emitter: no more than 0.25 Ohm.

—

Bipolar

DIP

—

PNP

—

24Вт

40pcs

60В

7,5A

0,1МГц

—

Chip KR1162EN6A (7906)

#3539

21805

СНГ

164 шт

9 грн.

10+	8,55 грн.
50+	8,10 грн.
100+	7,20 грн.

Stabilizer -6V/1.5A

2.5

TO-220

—

DIP

—

Nutrition

—

200pcs

—

Chip K564KT3 (nick.)

#10395

22404

СНГ

164 шт

12 грн.

10+	11,40 грн.
50+	10,80 грн.
100+	9,60 грн.

Four bidirectional switches.

0.5

SO14

—

SMD

—

Logics

—

100 pieces.

—

Diode D207

#8876

22650

СНГ

163 шт

5 грн.

50+	4,50 грн.
200+	4 грн.
500+	3,50 грн.

• Uopp max - Maximum direct reverse voltage: 200 V; • Inp max - Maximum forward current: 100 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 100 mA; • Iobr - Constant reverse current: no more than 50 μA at Uobr 100 V

—

DIP

КД-9

200V

100mA

—

Rectifier

—

100 pieces.

—

single

Transistor FDMC8010DC

#17147

29397

ON SEMICONDUCTOR

163 шт

43 грн.

10+	40,85 грн.
50+	38,70 грн.
100+	34,40 грн.

0.43

—

PQFN3.3X3.3

Field

SMD

—

MOS n-channel

30В

157А

50Вт

3000pcs

—

Triac BTA208-800B

#9693

21015

NXP

162 шт

24 грн.

10+	21,60 грн.
50+	19,20 грн.

2.8

—

DIP

TO-220

—

50pcs

—

Zener diode BZX55C 13V

#4203

20224

Rectron Semiconductor

160 шт

1 грн.

50+	0,90 грн.
100+	0,80 грн.
250+	0,75 грн.

Zener diode 13V 0.5W (BZX55C 13V)

0.12

—

DIP

—

500мВт

500pcs

—

13V

DO-35

—

1.5KE9.1A (1N6270A), Protective Diode, 1500W, 9.1V

#4222

20152

VISHAY

160 шт

6 грн.

10+	5,70 грн.
30+	5,40 грн.
50+	4,80 грн.

DO-201

1.1

—

DIP

DO-201AD

—

Protective

—

1.5кВт

200pcs

—

9.1V

—

Microcircuit R7F7010133AFP#KA4

#16782

29027

RENESAS

160 шт

480 грн.

10+	456 грн.
50+	432 грн.
100+	384 грн.

32-bit Microcontrollers - MCU 32BIT MCU RH850/P1M.

0.8

LQFP100

—

SMD

—

Microcontrollers

—

160pcs

—

Transistor GT403A

#10839

23036

СНГ

159 шт

16 грн.

10+	15,20 грн.
50+	14,40 грн.
100+	12,80 грн.

Transistor GT403A germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers.

—

Bipolar

DIP

—

PNP

—

4Вт

100 pieces.

30В

1,25А

—

1.5KE24A (=1N6280A), Protective Diode, 1500W, 24V

#4231

20197

VISHAY

158 шт

6 грн.

10+	5,70 грн.
30+	5,40 грн.
50+	4,80 грн.

DO-201

1.1

—

DIP

DO-201AD

—

Protective

—

1.5кВт

200pcs

—

24V

—

Chip K1102AP7

#9742

21202

СНГ

158 шт

18 грн.

10+	17,10 грн.
50+	16,20 грн.
100+	14,40 грн.

Peripheral dual current driver with 2I-NOT element

0.5

DIP8

—

DIP

—

Logics

—

100 pieces.

—

Transistor P307VM

#14350

26558

СНГ

158 шт

5 грн.

10+	4,75 грн.
50+	4,50 грн.
100+	4 грн.

Silicon npn transistor for operation in broadcasting receivers and transceiver equipment.

0.5

—

TO126

Bipolar

DIP

—

NPN

—

250мВт

1000pcs

60В

30мА

20МГц

150

—

Chip KR505RE3 0110

#14441

26653

СНГ

158 шт

10 грн.

10+	9,50 грн.
50+	9 грн.
100+	8 грн.

ROM (512 x 8, p-MOS).

1.3

SO24

—

SMD

—

Memory

—

140pcs

—

Chip K176LI1

#916

21672

СНГ

154 шт

6 грн.

10+	5,70 грн.
50+	5,40 грн.
100+	4,80 грн.

Logic element 9I and NOT.

DIP14

—

DIP

—

Logics

—

100 pieces.

—

Transistor KT3117A1

#9736

21146

СНГ

154 шт

4 грн.

10+	3,80 грн.
50+	3,60 грн.
100+	3,20 грн.

Transistor NPN 60V 0.4A 0.3W 200MHz TO92 (KT-26)

0.4

—

TO92

Bipolar

DIP

—

NPN

—

500мВт

500pcs

60В

400мА

200МГц

—

Transistor KT342BM

#13767

25933

СНГ

153 шт

5 грн.

10+	4,75 грн.
50+	4,50 грн.
100+	4 грн.

The main technical characteristics of the transistor KT342BM: • Transistor structure: npn; • Рк max - Constant power dissipation of the collector: 250 mW; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 300 MHz; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V; • Ik max - Maximum allowable DC collector current: 50 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.05 μA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 200... 500; • Sk - Collector junction capacitance: no more than 8 pF; • Rke us - Saturation resistance between collector and emitter: no more than 10 Ohm; • tk - Time constant of the feedback circuit at high frequency: no more than 200 ps.

0.3

—

TO92

Bipolar

DIP

—

NPN

—

250мВт

1000pcs

25В

50мА

300МГц

500

—

Transistor P201AE

#16182

28456

СНГ

151 шт

15 грн.

10+	14,25 грн.
50+	13,50 грн.
100+	12 грн.

Characteristics of the P201AE transistor: PNP structure Uk-e.max. 22V Uk-b.max. 30V Ik.max (permanent) 1.5A Ib.max. (permanent) 0.75A Pk.max. (without heatsink) 1.0W Pk.max. (with heat sink) 10W Switching power, max 30W Ik.obr., at t=+20ºC no more than 0.02-0.4mA Ik.obr., at t=+60ºC no more than 0.2-3.5mA h21e 40..100 fgr. 200kHz Ub-e.us 0.5-2.0V Uk-e.us 0.5-2.5V Temperature range -55..+70°C.

—

Bipolar

DIP

—

PNP

—

10Вт

50pcs

30В

1.5А

0,2МГц

100

—

1.5KE9.1CA, Protective Diode Bidirectional, 1500W, 9.1V

#4223

20188

VISHAY

150 шт

6 грн.

10+	5,70 грн.
30+	5,40 грн.
50+	4,80 грн.

DO-201

1.1

—

DIP

DO-201AD

—

Protective

—

1.5кВт

200pcs

—

9.1V

—

1.5KE100A (=1N6295A), Protective Diode, 1500W, 100V

#4247

20193

VISHAY

150 шт

8 грн.

10+	7,60 грн.
30+	7,20 грн.
50+	6,40 грн.

DO-201

1.1

—

DIP

DO-201AD

100V

—

Protective

—

1.5кВт

200pcs

—

100V

—

Chip K555IR27

#8300

22020

СНГ

150 шт

6 грн.

10+	5,70 грн.
50+	5,40 грн.
100+	4,80 грн.

The register is eight-bit with write permission.

DIP20

—

DIP

—

Logics

—

70pcs

—

Chip LT1767EMS8#TRPBF (LTLS)

#16854

29100

ANALOG DEVICES

150 шт

178 грн.

10+	169,10 грн.
50+	160,20 грн.
100+	142,40 грн.

0.25

MSOP-8

—

SMD

—

Nutrition

—

2500pcs

—

MMBT3906(2A)

#6430

20426

BL Galaxy Electrical

149 шт

1 грн.

10+	0,95 грн.
50+	0,90 грн.
100+	0,80 грн.
500+	0,70 грн.

0.1

—

SOT23

Bipolar

SMD

—

PNP

—

250мВт

3000pcs

40В

200мА

—

300

—

Chip K511ID1

#7440

22351

СНГ

148 шт

6 грн.

10+	5,70 грн.
50+	5,40 грн.
100+	4,80 грн.

BCD to decimal decoder.

1.5

DIP16

—

DIP

—

Logics

—

100 pieces.

—