Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Appointment | Diode type | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Breakdown voltage | Diode design |
|---|
| 25141 | СНГ | 174 шт |
80 грн.
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|
Appointment - differential system for the equipment of digital system IKM-30-4 | 16 | DIP28 | — | — | DIP | — | — | — | Telephony | — | — | — | — | — | 6pcs | — | — | — | — | — | — | — | — | |||||||||
Zener diode KS482A
#3400
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23310 | СНГ | 172 шт |
3 грн.
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Dissipation power, W 1 Minimum stabilization voltage, V 7.4 Rated stabilization voltage, V 8.2 Maximum stabilization voltage, V 9 Static resistance Rst., Ohm 25 at current I st, mA 5 Temperature coefficient of stabilization voltage aUst.,% /С 0.08 Temporary instability of stabilization voltage dUst., V 1.5 Minimum stabilization current Ist.min., mA 1 Maximum stabilization current Ist.max., mA 96 Operating temperature, С -60…125 Hole mounting method Housing kd-8 | 0.5 | — | — | — | DIP | — | — | — | — | — | — | — | — | 1Вт | 100 pieces. | — | — | — | — | 8V2 | kd-8 | — | — | ||||||||
| 22142 | СНГ | 170 шт |
10 грн.
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|
Medium-precision operational amplifier without frequency correction. | 1 | DIP14 | — | — | DIP | — | — | — | Amplifiers | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | |||||||||
| 20153 | BL Galaxy Electrical | 170 шт |
9 грн.
|
|
0.4 | — | — | — | DIP | DO-201AD | 600V | 1.5A | — | Fast | — | — | — | — | 1000pcs | — | — | — | — | — | — | — | single | ||||||||||
Zener diode BZX55C 4V7
#4191
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20207 | Rectron Semiconductor | 167 шт |
1 грн.
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|
Zener diode 4.7V 0.5W (BZX55C 4V7) | 0.12 | — | — | — | DIP | — | — | — | — | — | — | — | — | 500мВт | 500pcs | — | — | — | — | 4V7 | DO-35 | — | — | ||||||||
Diode D223A
#8891
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22786 | СНГ | 167 шт |
3 грн.
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|
Main technical characteristics of the D223A diode: • Uobp max - Maximum constant reverse voltage: 100 V; • Inp max - Maximum forward current: 50 mA; • Unp - Constant forward voltage: no more than 1 V at Inp 50 mA; • Iobp - Constant reverse current: no more than 1 µA at Uobp 100 V. | 0.3 | — | — | — | DIP | D104 | 100V | 50mA | — | Rectifier | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | single | ||||||||
Chip K176LP11
#923
|
21883 | СНГ | 166 шт |
5 грн.
|
|
2 logical elements 4OR-NOT and logical element NOT. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Rectifier pole KTS201G
#11218
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23352 | СНГ | 166 шт |
45 грн.
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A column of silicon, diffusion, avalanche diodes, pulsed. Designed to convert alternating pulsed voltage with a frequency of up to 1 kHz. | 63 | — | — | — | Screw | — | 8kV | 500mA | — | High voltage | — | — | — | — | 20pcs | — | — | — | — | — | — | — | assembly | ||||||||
Transistor P217V
#16932
|
29179 | СНГ | 166 шт |
25 грн.
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Main technical characteristics of the P217V transistor: • Transistor structure: pnp • Рк t max - Continuous dissipated power of the collector with heat sink: 24 W; • fh21э - Limit frequency of the transistor current transfer coefficient for circuits with a common emitter: not less than 0.1 MHz; • Uкбо проб - Collector-base breakdown voltage at a given collector reverse current and open emitter circuit: 60 V; • Uebo prob - Breakdown voltage emitter-base at a given reverse emitter current and open collector circuit: 15 V; • Iк max - Maximum permissible direct collector current: 7.5 A; • Iкбо - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 3 mA; • h21э - Static current transfer coefficient of the transistor in small signal mode for circuits with a common emitter: more than 5; • Rke nat - Saturation resistance between collector and emitter: no more than 0.25 Ohm. | 11 | — | — | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 24Вт | 40pcs | 60В | 7,5A | 0,1МГц | — | — | — | — | — | ||||||||
Chip KR1162EN6A (7906)
#3539
|
21805 | СНГ | 164 шт |
9 грн.
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Stabilizer -6V/1.5A | 2.5 | TO-220 | — | — | DIP | — | — | — | Nutrition | — | — | — | — | — | 200pcs | — | — | — | — | — | — | — | — | ||||||||
Chip K564KT3 (nick.)
#10395
|
22404 | СНГ | 164 шт |
12 грн.
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Four bidirectional switches. | 0.5 | SO14 | — | — | SMD | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Diode D207
#8876
|
22650 | СНГ | 163 шт |
5 грн.
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• Uopp max - Maximum direct reverse voltage: 200 V; • Inp max - Maximum forward current: 100 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 100 mA; • Iobr - Constant reverse current: no more than 50 μA at Uobr 100 V | 1 | — | — | — | DIP | КД-9 | 200V | 100mA | — | Rectifier | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | single | ||||||||
Transistor FDMC8010DC
#17147
|
29397 | ON SEMICONDUCTOR | 163 шт |
43 грн.
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0.43 | — | PQFN3.3X3.3 | Field | SMD | — | — | — | — | — | MOS n-channel | 30В | 157А | 50Вт | 3000pcs | — | — | — | — | — | — | — | — | |||||||||
Triac BTA208-800B
#9693
|
21015 | NXP | 162 шт |
24 грн.
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2.8 | — | — | — | DIP | TO-220 | — | — | — | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | |||||||||
Zener diode BZX55C 13V
#4203
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20224 | Rectron Semiconductor | 160 шт |
1 грн.
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Zener diode 13V 0.5W (BZX55C 13V) | 0.12 | — | — | — | DIP | — | — | — | — | — | — | — | — | 500мВт | 500pcs | — | — | — | — | 13V | DO-35 | — | — | ||||||||
| 20152 | VISHAY | 160 шт |
6 грн.
|
|
DO-201 | 1.1 | — | — | — | DIP | DO-201AD | — | — | — | Protective | — | — | — | 1.5кВт | 200pcs | — | — | — | — | — | — | 9.1V | — | |||||||||
| 29027 | RENESAS | 160 шт |
480 грн.
|
|
32-bit Microcontrollers - MCU 32BIT MCU RH850/P1M. | 0.8 | LQFP100 | — | — | SMD | — | — | — | Microcontrollers | — | — | — | — | — | 160pcs | — | — | — | — | — | — | — | — | |||||||||
Transistor GT403A
#10839
|
23036 | СНГ | 159 шт |
16 грн.
|
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Transistor GT403A germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers. | 3 | — | — | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 4Вт | 100 pieces. | 30В | 1,25А | — | 60 | — | — | — | — | ||||||||
| 20197 | VISHAY | 158 шт |
6 грн.
|
|
DO-201 | 1.1 | — | — | — | DIP | DO-201AD | — | — | — | Protective | — | — | — | 1.5кВт | 200pcs | — | — | — | — | — | — | 24V | — | |||||||||
Chip K1102AP7
#9742
|
21202 | СНГ | 158 шт |
18 грн.
|
|
Peripheral dual current driver with 2I-NOT element | 0.5 | DIP8 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Transistor P307VM
#14350
|
26558 | СНГ | 158 шт |
5 грн.
|
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Silicon npn transistor for operation in broadcasting receivers and transceiver equipment. | 0.5 | — | TO126 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 250мВт | 1000pcs | 60В | 30мА | 20МГц | 150 | — | — | — | — | ||||||||
Chip KR505RE3 0110
#14441
|
26653 | СНГ | 158 шт |
10 грн.
|
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ROM (512 x 8, p-MOS). | 1.3 | SO24 | — | — | SMD | — | — | — | Memory | — | — | — | — | — | 140pcs | — | — | — | — | — | — | — | — | ||||||||
Chip K176LI1
#916
|
21672 | СНГ | 154 шт |
6 грн.
|
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Logic element 9I and NOT. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Transistor KT3117A1
#9736
|
21146 | СНГ | 154 шт |
4 грн.
|
|
Transistor NPN 60V 0.4A 0.3W 200MHz TO92 (KT-26) | 0.4 | — | TO92 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 500мВт | 500pcs | 60В | 400мА | 200МГц | 40 | — | — | — | — | ||||||||
Transistor KT342BM
#13767
|
25933 | СНГ | 153 шт |
5 грн.
|
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The main technical characteristics of the transistor KT342BM: • Transistor structure: npn; • Рк max - Constant power dissipation of the collector: 250 mW; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 300 MHz; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V; • Ik max - Maximum allowable DC collector current: 50 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.05 μA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 200... 500; • Sk - Collector junction capacitance: no more than 8 pF; • Rke us - Saturation resistance between collector and emitter: no more than 10 Ohm; • tk - Time constant of the feedback circuit at high frequency: no more than 200 ps. | 0.3 | — | TO92 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 250мВт | 1000pcs | 25В | 50мА | 300МГц | 500 | — | — | — | — | ||||||||
Chip K555IR27
#8300
|
22020 | СНГ | 152 шт |
6 грн.
|
|
The register is eight-bit with write permission. | 2 | DIP20 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 70pcs | — | — | — | — | — | — | — | — | ||||||||
| 21683 | СНГ | 151 шт |
6 грн.
|
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Dual digital selector-multiplexer 4-1. | 1 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | |||||||||
Diode column KTS114A
#13812
|
25990 | СНГ | 151 шт |
10 грн.
|
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Pillars of silicon, diffusion diodes, rectifiers. Designed for use in high-voltage secondary power supply units with additional sealing. | 1.6 | — | — | — | DIP | — | 4kV | 50mA | — | High voltage | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | single | ||||||||
Transistor P201AE
#16182
|
28456 | СНГ | 151 шт |
15 грн.
|
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Characteristics of the P201AE transistor: PNP structure Uk-e.max. 22V Uk-b.max. 30V Ik.max (permanent) 1.5A Ib.max. (permanent) 0.75A Pk.max. (without heatsink) 1.0W Pk.max. (with heat sink) 10W Switching power, max 30W Ik.obr., at t=+20ºC no more than 0.02-0.4mA Ik.obr., at t=+60ºC no more than 0.2-3.5mA h21e 40..100 fgr. 200kHz Ub-e.us 0.5-2.0V Uk-e.us 0.5-2.5V Temperature range -55..+70°C. | 10 | — | — | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 10Вт | 50pcs | 30В | 1.5А | 0,2МГц | 100 | — | — | — | — | ||||||||
| 20188 | VISHAY | 150 шт |
6 грн.
|
|
DO-201 | 1.1 | — | — | — | DIP | DO-201AD | — | — | — | Protective | — | — | — | 1.5кВт | 200pcs | — | — | — | — | — | — | 9.1V | — |
