Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Appointment | Diode type | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Breakdown voltage | Diode design |
|---|
| 20168 | VISHAY | 57 шт |
6 грн.
|
|
DO-201 | 1.1 | — | — | — | DIP | DO-201AD | — | — | — | Protective | — | — | — | 1.5кВт | 200pcs | — | — | — | — | — | — | 300V | — | |||||||||
Chip KR531LR9 (=SN74S64)
#10127
|
21903 | СНГ | 57 шт |
6 грн.
|
|
Logic element 4-2-3-2AND-4OR-NOT. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Transistor P210V
#12951
|
25222 | СНГ | 57 шт |
60 грн.
|
|
Transistors P210V germanium alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. Are issued in the glass-to-metal case with rigid conclusions. The device type is indicated on the case. The mass of the transistor is not more than 37 g with terminal tips and not more than 48.5 g with a mounting flange. Specifications: aA0.336.483 TU. The main technical characteristics of the P210V transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 45 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 45 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 25 V; • Ik max - Maximum allowable DC collector current: 12 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 15 mA; • h21E - Static current transfer coefficient for common emitter circuit in large signal mode: more than 10. | 34 | — | — | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 45Вт | 10 pieces. | 45В | 12А | — | 10 | — | — | — | — | ||||||||
Transistor P306M
#15477
|
27717 | СНГ | 57 шт |
12 грн.
|
|
Transistors P306M germanium alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. | 2.5 | — | TO220 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 10Вт | 100 pieces. | 60В | 400мА | 1МГц | 25 | — | — | — | — | ||||||||
Chip K174UP1
#804
|
22000 | СНГ | 56 шт |
10 грн.
|
|
Brightness booster | 1.2 | DIP16 | — | — | DIP | — | — | — | TV | — | — | — | — | — | 90pcs | — | — | — | — | — | — | — | — | ||||||||
Chip K176IR2
#848
|
21865 | СНГ | 56 шт |
6 грн.
|
|
Dual four-bit static shift register. | 1 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 90pcs | — | — | — | — | — | — | — | — | ||||||||
IN74AC34N (=KR1554LI9)
#10326
|
22312 | INTEGRAL | 56 шт |
19 грн.
|
|
6 logic elements I. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Zener diode KS456A
#13965
|
26145 | СНГ | 56 шт |
8 грн.
|
|
Zener diodes KS456A silicon, diffusion-alloy, medium power. Designed to stabilize the nominal voltage of 5.6 V in the stabilization current range of 3...139 mA. The main technical parameters of the KS456A zener diode: • Rated stabilization voltage: 5.6 V at Ist 36 mA; • Stabilization voltage spread: 5.04... 6.16 V; • Temperature coefficient of stabilization voltage: 0...0.05%/°С; • Zener diode differential resistance: 10 Ohm at Ist 30 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 139 mA; • Maximum allowable dissipated power on the zener diode: 1 W; • Ambient temperature operating range: -60... +100 °С | 0.8 | — | — | — | DIP | — | — | — | — | — | — | — | — | 1Вт | 200pcs | — | — | — | — | 5V6 | kd-8 | — | — | ||||||||
Chip K561LE10
#989
|
21918 | СНГ | 55 шт |
6 грн.
|
|
Three three-input elements OR-NOT. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
| 21033 | FAIRCHILD SEMICONDUCTOR | 55 шт |
50 грн.
|
|
2.8 | TO220F-5 | — | — | DIP | — | — | — | Nutrition | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | ||||||||||
Triac MAC97A8
#5630
|
21143 | ON SEMICONDUCTOR | 55 шт |
4 грн.
|
|
0.3 | — | — | — | DIP | TO-92 | 600V | 600mA | — | — | — | — | — | — | 1000pcs | — | — | — | — | — | — | — | — | |||||||||
Chip KR531LA17
#9833
|
21439 | СНГ | 55 шт |
6 грн.
|
|
Two elements 4I-NOT with the ability to transfer the output to a high-impedance state when applied to the input E log. one | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Chip KM555LA1
#14349
|
26557 | СНГ | 55 шт |
5 грн.
|
|
Two logical elements 4I-NOT. | 1.3 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Chip K561IR9
#4060
|
21932 | СНГ | 54 шт |
6 грн.
|
|
Digital microcircuit of the CMOS series. Chip K561IR9 is a four-bit serial-parallel register. Contains 207 integral elements. | 1.1 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 90pcs | — | — | — | — | — | — | — | — | ||||||||
Chip KM155IP4
#4076
|
21282 | СНГ | 54 шт |
7 грн.
|
|
KM155IP4 microcircuits are an accelerated transfer block for an arithmetic unit. | 1.2 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Zener diode 1N5373B(68V)
#11079
|
23095 | ON SEMICONDUCTOR | 54 шт |
4.40 грн.
|
|
1 | — | — | — | DIP | — | — | — | — | — | — | — | — | 5Вт | 500pcs | — | — | — | — | 68V | do201 | — | — | |||||||||
| 23379 | Taychipst | 53 шт |
3 грн.
|
|
0.4 | — | — | — | DIP | DO-15 | — | — | — | Protective | — | — | — | 600Вт | 1000pcs | — | — | — | — | — | — | 39V | — | ||||||||||
Chip 74HC175
#14434
|
26644 | TSL | 53 шт |
10 грн.
|
|
Quadruple D flip-flop with reset. | 1.2 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 90pcs | — | — | — | — | — | — | — | — | ||||||||
Diode D102
#16154
|
28396 | СНГ | 53 шт |
3 грн.
|
|
Diodes D102 silicon, point, universal. Designed to work in TV video channels, in AGC systems and discriminators of FM and AM receivers. | 0.3 | — | — | — | DIP | D104 | 50V | 30mA | — | Rectifier | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | single | ||||||||
| 20172 | VISHAY | 52 шт |
7 грн.
|
|
DO-201 | 1.1 | — | — | — | DIP | DO-201AD | — | — | — | Protective | — | — | — | 1.5кВт | 200pcs | — | — | — | — | — | — | 12V | — | |||||||||
Chip BD6538G
#7301
|
20359 | ROHM SEMICONDUCTOR | 52 шт |
30 грн.
|
|
0.2 | SSOP5 | — | — | SMD | — | — | — | Nutrition | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | |||||||||
Chip K561LN3
#8386
|
22198 | СНГ | 52 шт |
6 грн.
|
|
six repeaters. | 1.1 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 90pcs | — | — | — | — | — | — | — | — | ||||||||
Chip KS500LE106
#13584
|
25730 | СНГ | 52 шт |
8 грн.
|
|
Three elements of OR-NOT. | 1.2 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 90pcs | — | — | — | — | — | — | — | — | ||||||||
Transistor P217
#16929
|
29176 | СНГ | 52 шт |
20 грн.
|
|
Main technical characteristics of the P217 transistor: • Transistor structure: pnp • Рк t max - Continuous dissipated power of the collector with heat sink: 30 W; • fh21э - Limit frequency of the transistor current transfer coefficient for circuits with a common emitter: not less than 0.1 MHz; • Uкбо проб - Collector-base breakdown voltage at a given collector reverse current and open: 60 V; • Uebo prob - Breakdown voltage emitter-base at a given reverse emitter current and open collector circuit: 15 V; • Iк max - Maximum permissible direct collector current: 7.5 A; • Iкбо - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 0.5 mA; • h21э - Static current transfer coefficient of the transistor in small signal mode for circuits with a common emitter: more than 15; • Rke nat - Saturation resistance between collector and emitter: no more than 0.5 Ohm. | 11 | — | — | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 30Вт | 40pcs | 60В | 7,5A | 0,1МГц | — | — | — | — | — | ||||||||
Chip K531LI3P
#10797
|
22986 | СНГ | 51 шт |
4 грн.
|
|
Three logical elements 3I. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Chip 78M10
#11203
|
23330 | ST MICROELECTRONICS | 51 шт |
4 грн.
|
|
Integrated voltage stabilizer 10V/0.5A. | 0.4 | DPAK | — | — | SMD | — | — | — | Nutrition | — | — | — | — | — | 2500pcs | — | — | — | — | — | — | — | — | ||||||||
Triac BT137S-600E
#15207
|
27446 | NXP | 51 шт |
15 грн.
|
|
1.2 | — | — | — | SMD | DPAK;TO-252 | 600V | 8A | — | — | — | — | — | — | 2000pcs | — | — | — | — | — | — | — | — | |||||||||
Транзистор FDS4435BZ
#16852
|
29098 | FAIRCHILD SEMICONDUCTOR | 51 шт |
17 грн.
|
|
0.4 | — | SO8 | Field | SMD | — | — | — | — | — | MOS p-channel | 30В | 8.8А | 2.5Вт | 2500pcs | — | — | — | — | — | — | — | — | |||||||||
| 22726 | ON SEMICONDUCTOR | 50 шт |
32 грн.
|
|
0.4 | DIP6 | — | — | DIP | — | — | — | — | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | ||||||||||
Triac BT139-600E
#5615
|
21128 | NXP | 50 шт |
14 грн.
|
|
2.8 | — | — | — | DIP | TO-220AB | 600V | 16A | — | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — |
