Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Appointment | Diode type | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Breakdown voltage | Diode design |
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Chip KM155IP4
#4076
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21282 | СНГ | 54 шт |
7 грн.
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KM155IP4 microcircuits are an accelerated transfer block for an arithmetic unit. | 1.2 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
| 20179 | VISHAY | 54 шт |
8 грн.
|
|
DO-201 | 1.1 | — | — | — | DIP | DO-201AD | — | — | — | Protective | — | — | — | 1.5кВт | 200pcs | — | — | — | — | — | — | 400V | — | |||||||||
Zener diode 1N5373B(68V)
#11079
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23095 | ON SEMICONDUCTOR | 54 шт |
4.40 грн.
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1 | — | — | — | DIP | — | — | — | — | — | — | — | — | 5Вт | 500pcs | — | — | — | — | 68V | do201 | — | — | |||||||||
Chip K176IR2
#848
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21865 | СНГ | 53 шт |
6 грн.
|
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Dual four-bit static shift register. | 1 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 90pcs | — | — | — | — | — | — | — | — | ||||||||
| 23379 | Taychipst | 53 шт |
3 грн.
|
|
0.4 | — | — | — | DIP | DO-15 | — | — | — | Protective | — | — | — | 600Вт | 1000pcs | — | — | — | — | — | — | 39V | — | ||||||||||
Chip 74HC175
#14434
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26644 | TSL | 53 шт |
10 грн.
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Quadruple D flip-flop with reset. | 1.2 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 90pcs | — | — | — | — | — | — | — | — | ||||||||
Diode D102
#16154
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28396 | СНГ | 53 шт |
3 грн.
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Diodes D102 silicon, point, universal. Designed to work in TV video channels, in AGC systems and discriminators of FM and AM receivers. | 0.3 | — | — | — | DIP | D104 | 50V | 30mA | — | Rectifier | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | single | ||||||||
| 20172 | VISHAY | 52 шт |
7 грн.
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DO-201 | 1.1 | — | — | — | DIP | DO-201AD | — | — | — | Protective | — | — | — | 1.5кВт | 200pcs | — | — | — | — | — | — | 12V | — | |||||||||
Chip BD6538G
#7301
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20359 | ROHM SEMICONDUCTOR | 52 шт |
30 грн.
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0.2 | SSOP5 | — | — | SMD | — | — | — | Nutrition | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | |||||||||
Chip KS500LE106
#13584
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25730 | СНГ | 52 шт |
8 грн.
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Three elements of OR-NOT. | 1.2 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 90pcs | — | — | — | — | — | — | — | — | ||||||||
Transistor P217
#16929
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29176 | СНГ | 52 шт |
20 грн.
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Main technical characteristics of the P217 transistor: • Transistor structure: pnp • Рк t max - Continuous dissipated power of the collector with heat sink: 30 W; • fh21э - Limit frequency of the transistor current transfer coefficient for circuits with a common emitter: not less than 0.1 MHz; • Uкбо проб - Collector-base breakdown voltage at a given collector reverse current and open: 60 V; • Uebo prob - Breakdown voltage emitter-base at a given reverse emitter current and open collector circuit: 15 V; • Iк max - Maximum permissible direct collector current: 7.5 A; • Iкбо - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 0.5 mA; • h21э - Static current transfer coefficient of the transistor in small signal mode for circuits with a common emitter: more than 15; • Rke nat - Saturation resistance between collector and emitter: no more than 0.5 Ohm. | 11 | — | — | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 30Вт | 40pcs | 60В | 7,5A | 0,1МГц | — | — | — | — | — | ||||||||
Chip K531LI3P
#10797
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22986 | СНГ | 51 шт |
4 грн.
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Three logical elements 3I. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Chip 78M10
#11203
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23330 | ST MICROELECTRONICS | 51 шт |
4 грн.
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Integrated voltage stabilizer 10V/0.5A. | 0.4 | DPAK | — | — | SMD | — | — | — | Nutrition | — | — | — | — | — | 2500pcs | — | — | — | — | — | — | — | — | ||||||||
| 22726 | ON SEMICONDUCTOR | 50 шт |
32 грн.
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0.4 | DIP6 | — | — | DIP | — | — | — | — | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | ||||||||||
Triac BT139-600E
#5615
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21128 | NXP | 50 шт |
14 грн.
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2.8 | — | — | — | DIP | TO-220AB | 600V | 16A | — | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | |||||||||
Triac BTA10-600B
#5617
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21130 | ST MICROELECTRONICS | 50 шт |
25 грн.
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2.8 | — | — | — | DIP | TO-220 | 600V | 10A | — | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | |||||||||
| 21351 | СНГ | 50 шт |
25 грн.
|
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Transistors silicon epitaxial structures npn switching. Designed for use in line-scan output stages, ignition devices for internal combustion engines and other switching devices. Transistors KT805A, KT805B are produced in a glass-to-metal case with hard leads. The device type is indicated on the case. The mass of the transistor is not more than 24 g. Hull type: KTYU-3-20. Specifications: aA0.336.341 TU. | 30 | — | kt-282 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 30Вт | 20pcs | 60В | 5А | 20МГц | 15 | — | — | — | — | |||||||||
Chip KR531LA17P
#9891
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21680 | СНГ | 50 шт |
6 грн.
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Two elements 4I-NOT with the ability to transfer the output to a high-impedance state when applied to the input E log. one | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
| 23374 | Taychipst | 50 шт |
3 грн.
|
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0.4 | — | — | — | DIP | DO-15 | — | — | — | Protective | — | — | — | 600Вт | 1000pcs | — | — | — | — | — | — | 30V | — | ||||||||||
Varicap KV106B
#14112
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26290 | СНГ | 50 шт |
15 грн.
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Varicaps KV106B silicon, epitaxial-diffusion, multiplying. Designed for use in frequency multiplication and frequency modulation circuits. The main technical parameters of the KV106B varicap: • Sd min - Minimum total capacitance: 15 pF at Uobr 4 V; • Sd max - Maximum total capacitance: 35 pF at Uobr 4 V; • Qв - Quality factor of varicap: 60; • Iobr - Constant reverse current: 20 μA at Uobr 90 V; • Uo6p - DC reverse voltage: 90 V; • Pnp - Forward power dissipation: 5 W; • Tacr - Working range of ambient temperature: -60... +100 °C. | 6.5 | — | — | — | Screw | КД-11 | — | — | — | — | — | — | — | 5Вт | 10 pieces. | — | — | — | — | — | — | — | — | |||||||||
Diode bridge KTS403A
#14360
|
26572 | СНГ | 50 шт |
45 грн.
|
Assembly of two single-phase diode bridges. Designed for rectifying alternating current with a frequency of up to 5 kHz. | 11 | — | — | — | DIP | — | 600V | 1A | — | Diode bridge | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | |||||||||
| 29429 | EVERLIGHT | 50 шт |
10 грн.
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0.4 | DIP6 | — | — | DIP | — | — | — | — | — | — | — | — | — | 65pcs | — | — | — | — | — | — | — | — | ||||||||||
| 29430 | EVERLIGHT | 50 шт |
10 грн.
|
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0.4 | SMD-6P | — | — | SMD | — | — | — | — | — | — | — | — | — | 3000pcs | — | — | — | — | — | — | — | — | ||||||||||
Optocoupler MOC3083 LITEON
#17230
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29483 | LITE-ON | 50 шт |
15 грн.
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0.4 | DIP6 | — | — | DIP | — | — | — | — | — | — | — | — | — | 65pcs | — | — | — | — | — | — | — | — | |||||||||
Chip K561LN3
#8386
|
22198 | СНГ | 49 шт |
6 грн.
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six repeaters. | 1.1 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 90pcs | — | — | — | — | — | — | — | — | ||||||||
| 23396 | VISHAY | 49 шт |
3.50 грн.
|
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0.4 | — | — | — | DIP | DO-15 | — | — | — | Protective | — | — | — | 600Вт | 1000pcs | — | — | — | — | — | — | 300V | — | ||||||||||
Zener diode KS531V
#14124
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26305 | СНГ | 49 шт |
6 грн.
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Zener diodes KS531V silicon, diffusion-alloy, medium power, precision. Designed to stabilize the nominal voltage of 31 V in the stabilization current range of 3 to 15 mA with high requirements for voltage stability in the temperature range of -60...+100 °C. The main technical parameters of the KS531V zener diode: • Rated stabilization voltage: 31 V at Ist 10 mA; • Stabilization voltage spread: 29.45... 32.55 V; • Temperature coefficient of stabilization voltage: ±0.005%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 50 Ohm at Ist10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 15 mA; • Maximum allowable power dissipation on the zener diode: 0.5 W; • Working range of ambient temperature: -60... +100 °С. | 0.5 | — | — | — | DIP | — | — | — | — | — | — | — | — | 500мВт | 50pcs | — | — | — | — | 31V | — | — | — | ||||||||
Triac BT137S-600E
#15207
|
27446 | NXP | 49 шт |
15 грн.
|
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1.2 | — | — | — | SMD | DPAK;TO-252 | 600V | 8A | — | — | — | — | — | — | 2000pcs | — | — | — | — | — | — | — | — | |||||||||
Транзистор FDS4435BZ
#16852
|
29098 | FAIRCHILD SEMICONDUCTOR | 49 шт |
17 грн.
|
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0.4 | — | SO8 | Field | SMD | — | — | — | — | — | MOS p-channel | 30В | 8.8А | 2.5Вт | 2500pcs | — | — | — | — | — | — | — | — | |||||||||
Diode FMP-2FU
#4314
|
20987 | SANKEN | 48 шт |
34 грн.
|
|
2 diodes in series. | 2.5 | — | — | — | DIP | TO-220F | 1500V | 5A | — | Damper | — | — | — | — | 50pcs | — | — | — | — | — | — | — | 2 diodes in series |
