Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Appointment | Diode type | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Breakdown voltage | Diode design |
|---|
Chip LM5010ASD/NOPB
#16853
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29099 | TEXAS INSTRUMENTS | 64 шт |
180 грн.
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|
0.34 | WSON-10 | — | — | SMD | — | — | — | — | Nutrition | — | — | — | — | — | 2500pcs | — | — | — | — | — | — | — | |||||||||
Chip KM155LA7
#757
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21330 | СНГ | 63 шт |
6 грн.
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|
KM155LA7 microcircuits are 2 4I-NOT logic elements with an open collector output and a large output branching factor (indicator element). | 1.1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Chip TNY253PN
#3270
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25815 | Power Integrations | 63 шт |
25 грн.
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|
0.5 | DIP8 | — | — | DIP | — | — | — | — | Nutrition | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | |||||||||
BSP295
#5456
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20354 | INFINEON TECHNOLOGIES | 63 шт |
8 грн.
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|
download datasheet BSP295 pdf,453 KB | 0.3 | — | SOT223 | Field | SMD | — | — | — | — | — | — | MOS n-channel | 60В | 1.8А | 1.8Вт | 1000pcs | — | — | — | — | — | — | — | ||||||||
Chip KM531IR19 (=Am25S08)
#13771
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25944 | СНГ | 63 шт |
8 грн.
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|
4-bit parallel shift register on D-flip-flops. | 1.2 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Transistor P216G
#16926
|
29173 | СНГ | 63 шт |
15 грн.
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Main technical characteristics of the P216G transistor: • Transistor structure: pnp • Рк t max - Continuous dissipated power of the collector with heat sink: 24 W; • fh21э - Limit frequency of the transistor current transfer coefficient for circuits with a common emitter: not less than 0.1 MHz; • Uкбо проб - Collector-base breakdown voltage at a given collector reverse current and open emitter circuit: 50 V; • Uebo prob - Breakdown voltage emitter-base at a given reverse emitter current and open collector circuit: 15 V; • Iк max - Maximum permissible direct collector current: 7.5 A; • Iкбо - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 2 mA; • h21Э - Static current transfer coefficient for the common emitter circuit in large signal mode: >5; • Rke nat - Saturation resistance between collector and emitter: no more than 0.25 Ohm. | 10 | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | — | — | 24Вт | 20pcs | 50В | 7,5A | 0,1МГц | — | — | — | — | ||||||||
Diode D242A
#17037
|
24628 | СНГ | 63 шт |
30 грн.
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Main technical characteristics of the D242A diode: • Uobp max - Maximum constant reverse voltage: 100 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - Constant forward voltage: no more than 1 V at Inp 10 A; • Iobr - Continuous reverse current: no more than 3000 µA at Uobr 100 V. | 13 | — | — | — | Screw | КДЮ-11 | 100V | 10A | — | — | Rectifier | — | — | — | — | 50pcs | — | — | — | — | — | — | single | ||||||||
| 22740 | TOSHIBA | 62 шт |
10 грн.
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0.3 | SO4 | — | — | SMD | — | — | — | — | — | — | — | — | — | — | 500pcs | — | — | — | — | — | — | — | ||||||||||
| 25880 | Taychipst | 62 шт |
3 грн.
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0.4 | — | — | — | DIP | DO-15 | — | — | — | — | Protective | — | — | — | 600Вт | 1000pcs | — | — | — | — | — | 13V | — | ||||||||||
Chip SN74HC14PWR
#17139
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29389 | TEXAS INSTRUMENTS | 62 шт |
17 грн.
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0.43 | TSSOP14 | — | — | SMD | — | — | — | — | Logics | — | — | — | — | — | 2000pcs | — | — | — | — | — | — | — | |||||||||
| 29130 | СНГ | 61 шт |
8 грн.
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Transistors 1T308A germanium diffusion-alloy structures pnp universal. Designed for use in oscillators, power amplifiers, pulse devices. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | PNP | — | — | 150мВт | 100 pieces. | 15В | 120мА | 120МГц | 75 | — | — | — | |||||||||
| 23365 | Taychipst | 61 шт |
3 грн.
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0.4 | — | — | — | DIP | DO-15 | — | — | — | — | Protective | — | — | — | 600Вт | 1000pcs | — | — | — | — | — | 18V | — | ||||||||||
Zener diode KS515G
#14114
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26292 | СНГ | 61 шт |
7 грн.
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Zener diodes KS515G silicon, diffusion-alloy, medium power, precision. Designed to stabilize the nominal voltage of 15 V in the stabilization current range of 3 to 31 mA with high requirements for voltage stability in the temperature range of -60...+100 °C. The main technical parameters of the KS515G zener diode: • Rated stabilization voltage: 15 V at Ist 10 mA; • Stabilization voltage spread: 14.25... 15.75 V; • Temperature coefficient of stabilization voltage: 0.005%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 25 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 31 mA; • Maximum allowable power dissipation on the zener diode: 0.5 W; • Working range of ambient temperature: -60... +100 °С. | 0.6 | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 500мВт | 50pcs | — | — | — | — | 15V | — | — | ||||||||
Chip KR142EN1B
#927
|
21926 | СНГ | 60 шт |
12 грн.
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KR142EN1B microcircuits are voltage regulators of a compensation type with an adjustable output voltage of positive polarity and a load current of 150 mA. They have protection against short circuits and overloads and a circuit for remote shutdown by an external signal. An external divider is used to adjust the output voltage. | 1 | DIP14 | — | — | DIP | — | — | — | — | Nutrition | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
| 20139 | DIOTEC SEMICONDUCTOR | 60 шт |
3 грн.
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3A. 40V | 0.2 | — | — | — | SMD | DO-214AC, SMA | 40V | 3.0A | — | — | Schottky | — | — | — | — | 3000pcs | — | — | — | — | — | — | single | |||||||||
Triac BTA41-600B
#5625
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21138 | ST MICROELECTRONICS | 60 шт |
56 грн.
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7 | — | — | — | DIP | TO-3P | 600V | 40A | — | — | — | — | — | — | — | 30pcs | — | — | — | — | — | — | — | |||||||||
Triac BT137-600E
#5635
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21150 | NXP | 60 шт |
15 грн.
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2.8 | — | — | — | DIP | TO-220AB | 600V | 8A | — | — | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | |||||||||
Chip KR580VT42
#7451
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22217 | СНГ | 60 шт |
10 грн.
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Address multiplexer and dynamic memory recovery counter. | 4 | DIP28 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | — | 36pcs | — | — | — | — | — | — | — | ||||||||
Chip KM555IR11A
#10166
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22045 | СНГ | 60 шт |
7 грн.
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Four-bit universal shift register. | 1.2 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Thyristor KU201D
#10411
|
22422 | СНГ | 60 шт |
10 грн.
|
• Maximum DC reverse voltage: 100 V; • Maximum DC voltage in closed state: 100 V; • Maximum repetitive pulse current in the open state: 30 A; • Repetitive pulse current in the open state: 2 A; • Open state voltage: 2 V; • Direct current in the closed state: no more than 5 mA; • Constant reverse current: no more than 5 mA; • Unlocking direct control current: no more than 100 mA; • Constant unlocking control voltage: no more than 6 V; • Voltage slew rate in closed state: 5 V/µs; • Turn-on time: no more than 10 microseconds; • Turn-off time: no more than 100 microseconds; • Ambient temperature operating range: -60... +125 °С | 11 | — | — | — | Screw | — | 100V | — | 30A | — | — | — | — | — | — | 40pcs | — | — | — | — | — | — | — | |||||||||
Transistor 1T905A
#14616
|
26832 | СНГ | 60 шт |
20 грн.
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Transistors 1T905A germanium diffusion-alloy structures pnp universal. Designed for use in switching and pulse amplifying devices, in the output stages of low-frequency power amplifiers. The main technical characteristics of the transistor 1T905A: • Structure: pnp • Рк max - Constant power dissipation of the collector: 6 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 30 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 75 V; • Ik max - Maximum allowable DC collector current: 3 A; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 2 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 35...100; • Sk - Collector junction capacitance: no more than 200 pF; • Rke us - Saturation resistance between collector and emitter: no more than 0.17 Ohm; • tk - Time constant of the feedback circuit at high frequency: no more than 300 ps. | 3.5 | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | — | — | 6Вт | 50pcs | 65В | 3А | 30МГц | 100 | — | — | — | ||||||||
| 23354 | Taychipst | 59 шт |
3 грн.
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0.4 | — | — | — | DIP | DO-15 | — | — | — | — | Protective | — | — | — | 600Вт | 1000pcs | — | — | — | — | — | 6.8V | — | ||||||||||
Chip K561CA1
#3948
|
21408 | СНГ | 58 шт |
6 грн.
|
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Digital microcircuit of the CMOS series. The K561CA1 chip is a twelve-bit comparison circuit (12-bit parity controller). Contains 224 integral elements. Housing type 238.16-1, weight no more than 1.5 g. | 1.1 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | — | 90pcs | — | — | — | — | — | — | — | ||||||||
Chip HT7150 (1501) (SOT23-5)
#11206
|
23334 | Holtek | 58 шт |
6 грн.
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0.12 | SOT23-5 | — | — | SMD | — | — | — | — | Nutrition | — | — | — | — | — | 2500pcs | — | — | — | — | — | — | — | |||||||||
Chip KR185RU9
#14480
|
26692 | СНГ | 58 шт |
31 грн.
|
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RAM with a capacity of 576 bits (64x9p). | 4 | DIP28 | — | — | DIP | — | — | — | — | Memory | — | — | — | — | — | 40pcs | — | — | — | — | — | — | — | ||||||||
Chip K224CA3
#15482
|
27722 | СНГ | 58 шт |
12 грн.
|
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Amplitude comparison scheme. | 1 | ZIP-9 | — | — | DIP | — | — | — | — | Audio | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Transistor MP101A
#16893
|
29140 | СНГ | 58 шт |
6 грн.
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Transistors MP101B silicon alloy npn amplifying low-frequency with non-standard MP101, MP101B and standard MP101A noise figures at a frequency of 1 kHz. Designed to amplify and switch low frequency signals. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | NPN | — | — | 150мВт | 100 pieces. | 10В | 20мА | 0,5МГц | 30 | — | — | — | ||||||||
Chip K157UN1B
#705
|
22220 | СНГ | 57 шт |
20 грн.
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Low frequency amplifier. | 1 | DIP14 | — | — | DIP | — | — | — | — | Amplifiers | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Chip K174GF1
#802
|
22125 | СНГ | 57 шт |
10 грн.
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The K174GF1 microcircuit is a master (pulse) horizontal sweep generator with auto-tuning of frequency and phase. | 1 | DIP14 | — | — | DIP | — | — | — | — | TV | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Diode Bridge DB107S
#3388
|
21443 | SEP | 57 шт |
3 грн.
|
|
1 | — | — | — | SMD | — | 1000V | 1A | — | — | Rectifier | — | — | — | — | 2000pcs | — | — | — | — | — | — | — |
