Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Breakdown voltage | Diode design |
|---|
Chip KR142EN1B
#927
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21926 | СНГ | 60 шт |
12 грн.
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KR142EN1B microcircuits are voltage regulators of a compensation type with an adjustable output voltage of positive polarity and a load current of 150 mA. They have protection against short circuits and overloads and a circuit for remote shutdown by an external signal. An external divider is used to adjust the output voltage. | 1 | DIP14 | — | — | DIP | — | — | — | — | Nutrition | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Triac BT137-600E
#5635
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21150 | NXP | 60 шт |
15 грн.
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2.8 | — | — | — | DIP | TO-220AB | 600V | 8A | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | |||||||||
Chip KR580VT42
#7451
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22217 | СНГ | 60 шт |
10 грн.
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Address multiplexer and dynamic memory recovery counter. | 4 | DIP28 | — | — | DIP | — | — | — | — | Logics | — | — | — | 36pcs | — | — | — | — | — | — | — | — | ||||||||
Chip KM555IR11A
#10166
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22045 | СНГ | 60 шт |
7 грн.
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Four-bit universal shift register. | 1.2 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Thyristor KU201D
#10411
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22422 | СНГ | 60 шт |
10 грн.
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• Maximum DC reverse voltage: 100 V; • Maximum DC voltage in closed state: 100 V; • Maximum repetitive pulse current in the open state: 30 A; • Repetitive pulse current in the open state: 2 A; • Open state voltage: 2 V; • Direct current in the closed state: no more than 5 mA; • Constant reverse current: no more than 5 mA; • Unlocking direct control current: no more than 100 mA; • Constant unlocking control voltage: no more than 6 V; • Voltage slew rate in closed state: 5 V/µs; • Turn-on time: no more than 10 microseconds; • Turn-off time: no more than 100 microseconds; • Ambient temperature operating range: -60... +125 °С | 11 | — | — | — | Screw | — | 100V | — | 30A | — | — | — | — | 40pcs | — | — | — | — | — | — | — | — | |||||||||
Transistor 1T905A
#14616
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26832 | СНГ | 60 шт |
20 грн.
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Transistors 1T905A germanium diffusion-alloy structures pnp universal. Designed for use in switching and pulse amplifying devices, in the output stages of low-frequency power amplifiers. The main technical characteristics of the transistor 1T905A: • Structure: pnp • Рк max - Constant power dissipation of the collector: 6 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 30 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 75 V; • Ik max - Maximum allowable DC collector current: 3 A; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 2 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 35...100; • Sk - Collector junction capacitance: no more than 200 pF; • Rke us - Saturation resistance between collector and emitter: no more than 0.17 Ohm; • tk - Time constant of the feedback circuit at high frequency: no more than 300 ps. | 3.5 | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 6Вт | 50pcs | 65В | 3А | 30МГц | 100 | — | — | — | — | ||||||||
| 23354 | Taychipst | 59 шт |
3 грн.
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0.4 | — | — | — | DIP | DO-15 | — | — | — | — | Protective | — | 600Вт | 1000pcs | — | — | — | — | — | — | 6.8V | — | ||||||||||
Diode D242A
#17037
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24628 | СНГ | 59 шт |
30 грн.
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Main technical characteristics of the D242A diode: • Uobp max - Maximum constant reverse voltage: 100 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - Constant forward voltage: no more than 1 V at Inp 10 A; • Iobr - Continuous reverse current: no more than 3000 µA at Uobr 100 V. | 13 | — | — | — | Screw | КДЮ-11 | 100V | 10A | — | — | Rectifier | — | — | 50pcs | — | — | — | — | — | — | — | single | ||||||||
Chip K561CA1
#3948
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21408 | СНГ | 58 шт |
6 грн.
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Digital microcircuit of the CMOS series. The K561CA1 chip is a twelve-bit comparison circuit (12-bit parity controller). Contains 224 integral elements. Housing type 238.16-1, weight no more than 1.5 g. | 1.1 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | — | ||||||||
Chip HT7150 (1501) (SOT23-5)
#11206
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23334 | Holtek | 58 шт |
6 грн.
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0.12 | SOT23-5 | — | — | SMD | — | — | — | — | Nutrition | — | — | — | 2500pcs | — | — | — | — | — | — | — | — | |||||||||
Chip KR185RU9
#14480
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26692 | СНГ | 58 шт |
31 грн.
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RAM with a capacity of 576 bits (64x9p). | 4 | DIP28 | — | — | DIP | — | — | — | — | Memory | — | — | — | 40pcs | — | — | — | — | — | — | — | — | ||||||||
Chip K224CA3
#15482
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27722 | СНГ | 58 шт |
12 грн.
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Amplitude comparison scheme. | 1 | ZIP-9 | — | — | DIP | — | — | — | — | Audio | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Transistor MP101A
#16893
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29140 | СНГ | 58 шт |
6 грн.
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Transistors MP101B silicon alloy npn amplifying low-frequency with non-standard MP101, MP101B and standard MP101A noise figures at a frequency of 1 kHz. Designed to amplify and switch low frequency signals. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | NPN | 150мВт | 100 pieces. | 10В | 20мА | 0,5МГц | 30 | — | — | — | — | ||||||||
Chip K157UN1B
#705
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22220 | СНГ | 57 шт |
20 грн.
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Low frequency amplifier. | 1 | DIP14 | — | — | DIP | — | — | — | — | Amplifiers | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Chip K174GF1
#802
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22125 | СНГ | 57 шт |
10 грн.
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The K174GF1 microcircuit is a master (pulse) horizontal sweep generator with auto-tuning of frequency and phase. | 1 | DIP14 | — | — | DIP | — | — | — | — | TV | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
| 20168 | VISHAY | 57 шт |
6 грн.
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DO-201 | 1.1 | — | — | — | DIP | DO-201AD | — | — | — | — | Protective | — | 1.5кВт | 200pcs | — | — | — | — | — | — | 300V | — | |||||||||
Chip KR531LR9 (=SN74S64)
#10127
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21903 | СНГ | 57 шт |
6 грн.
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Logic element 4-2-3-2AND-4OR-NOT. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Transistor P210V
#12951
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25222 | СНГ | 57 шт |
60 грн.
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Transistors P210V germanium alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. Are issued in the glass-to-metal case with rigid conclusions. The device type is indicated on the case. The mass of the transistor is not more than 37 g with terminal tips and not more than 48.5 g with a mounting flange. Specifications: aA0.336.483 TU. The main technical characteristics of the P210V transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 45 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 45 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 25 V; • Ik max - Maximum allowable DC collector current: 12 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 15 mA; • h21E - Static current transfer coefficient for common emitter circuit in large signal mode: more than 10. | 34 | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 45Вт | 10 pieces. | 45В | 12А | — | 10 | — | — | — | — | ||||||||
Transistor P306M
#15477
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27717 | СНГ | 57 шт |
12 грн.
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Transistors P306M germanium alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. | 2.5 | — | TO220 | Bipolar | DIP | — | — | — | — | — | — | PNP | 10Вт | 100 pieces. | 60В | 400мА | 1МГц | 25 | — | — | — | — | ||||||||
Chip K174UP1
#804
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22000 | СНГ | 56 шт |
10 грн.
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Brightness booster | 1.2 | DIP16 | — | — | DIP | — | — | — | — | TV | — | — | — | 90pcs | — | — | — | — | — | — | — | — | ||||||||
Triac BTA41-600B
#5625
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21138 | ST MICROELECTRONICS | 56 шт |
56 грн.
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7 | — | — | — | DIP | TO-3P | 600V | 40A | — | — | — | — | — | 30pcs | — | — | — | — | — | — | — | — | |||||||||
IN74AC34N (=KR1554LI9)
#10326
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22312 | INTEGRAL | 56 шт |
19 грн.
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6 logic elements I. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Zener diode KS456A
#13965
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26145 | СНГ | 56 шт |
8 грн.
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Zener diodes KS456A silicon, diffusion-alloy, medium power. Designed to stabilize the nominal voltage of 5.6 V in the stabilization current range of 3...139 mA. The main technical parameters of the KS456A zener diode: • Rated stabilization voltage: 5.6 V at Ist 36 mA; • Stabilization voltage spread: 5.04... 6.16 V; • Temperature coefficient of stabilization voltage: 0...0.05%/°С; • Zener diode differential resistance: 10 Ohm at Ist 30 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 139 mA; • Maximum allowable dissipated power on the zener diode: 1 W; • Ambient temperature operating range: -60... +100 °С | 0.8 | — | — | — | DIP | — | — | — | — | — | — | — | 1Вт | 200pcs | — | — | — | — | 5V6 | kd-8 | — | — | ||||||||
Chip K561LE10
#989
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21918 | СНГ | 55 шт |
6 грн.
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Three three-input elements OR-NOT. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
| 21033 | FAIRCHILD SEMICONDUCTOR | 55 шт |
50 грн.
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2.8 | TO220F-5 | — | — | DIP | — | — | — | — | Nutrition | — | — | — | 50pcs | — | — | — | — | — | — | — | — | ||||||||||
Triac MAC97A8
#5630
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21143 | ON SEMICONDUCTOR | 55 шт |
4 грн.
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0.3 | — | — | — | DIP | TO-92 | 600V | 600mA | — | — | — | — | — | 1000pcs | — | — | — | — | — | — | — | — | |||||||||
Chip KR531LA17
#9833
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21439 | СНГ | 55 шт |
6 грн.
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Two elements 4I-NOT with the ability to transfer the output to a high-impedance state when applied to the input E log. one | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Chip KM555LA1
#14349
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26557 | СНГ | 55 шт |
5 грн.
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Two logical elements 4I-NOT. | 1.3 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Diode Bridge DB107S
#3388
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21443 | SEP | 54 шт |
3 грн.
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1 | — | — | — | SMD | — | 1000V | 1A | — | — | Rectifier | — | — | 2000pcs | — | — | — | — | — | — | — | — | |||||||||
Chip K561IR9
#4060
|
21932 | СНГ | 54 шт |
6 грн.
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Digital microcircuit of the CMOS series. Chip K561IR9 is a four-bit serial-parallel register. Contains 207 integral elements. | 1.1 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | — |
