Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Appointment | Diode type | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Breakdown voltage | Diode design |
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Thyristor BT152-800R
#8973
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20538 | NXP | 68 шт |
20 грн.
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2.5 | — | — | — | DIP | TO-220 | 800V | 13A | — | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | |||||||||
Chip IN74AC241N (EKR1554AP4)
#10322
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22301 | INTEGRAL | 68 шт |
20 грн.
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2 | DIP20 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 70pcs | — | — | — | — | — | — | — | — | |||||||||
Diode KD202M
#13736
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25904 | СНГ | 68 шт |
8 грн.
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Diodes KD202M silicon, diffusion. The main technical characteristics of the KD202M diode: • Uobr and max - Maximum impulse reverse voltage: 500 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 μA at Uobr 500 V | 4.5 | — | — | — | Screw | КД-11 | 350V | 5A | — | Rectifier | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | single | ||||||||
Optocoupler ET1102
#1724
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22710 | VISHAY | 67 шт |
7 грн.
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0.3 | DIP4 | — | — | DIP | — | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | |||||||||
Chip AT89C51-24PC
#2710
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21855 | ATMEL | 67 шт |
62 грн.
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5.7 | DIP40 | — | — | DIP | — | — | — | Microcontrollers | — | — | — | — | — | 10 pieces. | — | — | — | — | — | — | — | — | |||||||||
| 23395 | VISHAY | 67 шт |
3.50 грн.
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0.4 | — | — | — | DIP | DO-15 | — | — | — | Protective | — | — | — | 600Вт | 1000pcs | — | — | — | — | — | — | 300V | — | ||||||||||
Chip TNY254GN
#13653
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25816 | Power Integrations | 67 шт |
25 грн.
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0.5 | SMD-8 | — | — | SMD | — | — | — | Nutrition | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | |||||||||
Chip TNY280GN
#13667
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25835 | Power Integrations | 67 шт |
44 грн.
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0.5 | SMD-8B | — | — | SMD | — | — | — | Nutrition | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | |||||||||
Zener diode 1SMB5931BT3G
#16285
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28532 | ON SEMICONDUCTOR | 67 шт |
9 грн.
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0.25 | — | — | — | SMD | — | — | — | — | — | — | — | — | 3Вт | 2500pcs | — | — | — | — | 18V | SMB | — | — | |||||||||
Chip K174XA1M
#904
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21982 | СНГ | 66 шт |
10 грн.
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K174XA1M chips are synchronous color subcarrier demodulators. They perform the functions of switching and limiting the SECAM signal, separating the color difference signal and locking the color channel when receiving a black and white image. Are intended for work in the decoding device SECAM of a color TV set. | 1.5 | DIP16 | — | — | DIP | — | — | — | TV | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
| 20186 | VISHAY | 66 шт |
4 грн.
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DO-201 | 1.1 | — | — | — | DIP | DO-201AD | — | — | — | Protective | — | — | — | 1.5кВт | 200pcs | — | — | — | — | — | — | 120V | — | |||||||||
Zener diode 1N5344B(8V2)
#11055
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23075 | ON SEMICONDUCTOR | 66 шт |
4.40 грн.
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1 | — | — | — | DIP | — | — | — | — | — | — | — | — | 5Вт | 500pcs | — | — | — | — | 8V2 | do201 | — | — | |||||||||
Diode KD213A
#8883
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22967 | СНГ | 65 шт |
25 грн.
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Silicon diode, diffusion. | 4 | — | — | — | DIP | КД-23 | 200V | 10A | — | Rectifier | — | — | — | — | 200pcs | — | — | — | — | — | — | — | single | ||||||||
| 23359 | Taychipst | 65 шт |
3 грн.
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0.4 | — | — | — | DIP | DO-15 | — | — | — | Protective | — | — | — | 600Вт | 1000pcs | — | — | — | — | — | — | 10V | — | ||||||||||
Chip KR531LA19 (=SN74S139)
#14345
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26553 | СНГ | 65 шт |
6 грн.
|
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Logical element "12I-NOT" with three output states. | 1 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Transistor P213B
#14711
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26929 | СНГ | 65 шт |
15 грн.
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The main technical characteristics of the P213B transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 10 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 45 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 10 V; • Ik max - Maximum allowable DC collector current: 5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: more than 40; • Rke us - Saturation resistance between collector and emitter: no more than 1.25 Ohm. | 10 | — | — | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 10Вт | 20pcs | 30В | 5А | 0,15МГц | 40 | — | — | — | — | ||||||||
Transistor KT837U
#16662
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28901 | INTEGRAL | 65 шт |
12 грн.
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Transistors are silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. | 2.5 | — | TO220 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 30Вт | 100 pieces. | 40В | 7,5A | 1МГц | 80 | — | — | — | — | ||||||||
Diode bridge KTS405AT
#13929
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26108 | СНГ | 64 шт |
10 грн.
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Diode bridge 1.2A 400V | 5.7 | — | — | — | DIP | — | 400V | 1.2A | — | Diode bridge | — | — | — | — | 500pcs | — | — | — | — | — | — | — | — | |||||||||
Diode assembly KD205BT
#13978
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26158 | СНГ | 64 шт |
16 грн.
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Diode assemblies KD205BT, each consisting of two silicon diffusion diodes, with separate leads. Designed to convert alternating voltage with a frequency of up to 5 kHz in power supply units of radio-electronic equipment. The main technical characteristics of the KD205BT diode: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 500 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 500 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 400 V | 5.7 | — | — | — | DIP | — | 400V | 500mA | — | Rectifier | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | assembly | |||||||||
Chip LM5010ASD/NOPB
#16853
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29099 | TEXAS INSTRUMENTS | 64 шт |
180 грн.
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0.34 | WSON-10 | — | — | SMD | — | — | — | Nutrition | — | — | — | — | — | 2500pcs | — | — | — | — | — | — | — | — | |||||||||
Chip KM155LA7
#757
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21330 | СНГ | 63 шт |
6 грн.
|
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KM155LA7 microcircuits are 2 4I-NOT logic elements with an open collector output and a large output branching factor (indicator element). | 1.1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Chip TNY253PN
#3270
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25815 | Power Integrations | 63 шт |
25 грн.
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0.5 | DIP8 | — | — | DIP | — | — | — | Nutrition | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | |||||||||
BSP295
#5456
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20354 | INFINEON TECHNOLOGIES | 63 шт |
8 грн.
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download datasheet BSP295 pdf,453 KB | 0.3 | — | SOT223 | Field | SMD | — | — | — | — | — | MOS n-channel | 60В | 1.8А | 1.8Вт | 1000pcs | — | — | — | — | — | — | — | — | ||||||||
Chip KM531IR19 (=Am25S08)
#13771
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25944 | СНГ | 63 шт |
8 грн.
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4-bit parallel shift register on D-flip-flops. | 1.2 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Transistor P216G
#16926
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29173 | СНГ | 63 шт |
15 грн.
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Main technical characteristics of the P216G transistor: • Transistor structure: pnp • Рк t max - Continuous dissipated power of the collector with heat sink: 24 W; • fh21э - Limit frequency of the transistor current transfer coefficient for circuits with a common emitter: not less than 0.1 MHz; • Uкбо проб - Collector-base breakdown voltage at a given collector reverse current and open emitter circuit: 50 V; • Uebo prob - Breakdown voltage emitter-base at a given reverse emitter current and open collector circuit: 15 V; • Iк max - Maximum permissible direct collector current: 7.5 A; • Iкбо - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 2 mA; • h21Э - Static current transfer coefficient for the common emitter circuit in large signal mode: >5; • Rke nat - Saturation resistance between collector and emitter: no more than 0.25 Ohm. | 10 | — | — | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 24Вт | 20pcs | 50В | 7,5A | 0,1МГц | — | — | — | — | — | ||||||||
| 22740 | TOSHIBA | 62 шт |
10 грн.
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0.3 | SO4 | — | — | SMD | — | — | — | — | — | — | — | — | — | 500pcs | — | — | — | — | — | — | — | — | ||||||||||
Zener diode 1N5370B(56V)
#11076
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23093 | ON SEMICONDUCTOR | 62 шт |
4.40 грн.
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1 | — | — | — | DIP | — | — | — | — | — | — | — | — | 5Вт | 500pcs | — | — | — | — | 56V | do201 | — | — | |||||||||
| 25880 | Taychipst | 62 шт |
3 грн.
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0.4 | — | — | — | DIP | DO-15 | — | — | — | Protective | — | — | — | 600Вт | 1000pcs | — | — | — | — | — | — | 13V | — | ||||||||||
Chip SN74HC14PWR
#17139
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29389 | TEXAS INSTRUMENTS | 62 шт |
17 грн.
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0.43 | TSSOP14 | — | — | SMD | — | — | — | Logics | — | — | — | — | — | 2000pcs | — | — | — | — | — | — | — | — | |||||||||
| 29130 | СНГ | 61 шт |
8 грн.
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Transistors 1T308A germanium diffusion-alloy structures pnp universal. Designed for use in oscillators, power amplifiers, pulse devices. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 150мВт | 100 pieces. | 15В | 120мА | 120МГц | 75 | — | — | — | — |
