Active radio components

Results: 8086

MPN Article Brand In stock Price Discounts Quantity Description Weight g. Type of shell Transistor case type Transistor type Mounting type Type of shell Urev. max, V Ipr. max. Appointment Diode type Structure Drain-source voltage Drain current Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain Stabilization voltage Zener diode housing type Breakdown voltage Diode design
25829 Power Integrations 74 шт
23 грн.
10+21,85 грн.
50+20,70 грн.
100+18,40 грн.
0.5 DIP-8B SMD Nutrition 50pcs
26320 СНГ 74 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Logic element 4-4I-2OR-NOT with the possibility of expansion by OR. 1 DIP14 DIP Logics 100 pieces.
22238 СНГ 71 шт
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
Six trigger Schmitt inverters. 1.5 DIP14 DIP Logics 100 pieces.
21261 СНГ 70 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
Priority encoder 8 in 3 1 DIP16 DIP Logics 90pcs
23373 VISHAY 70 шт
3 грн.
10+2,85 грн.
30+2,70 грн.
50+2,40 грн.
0.4 DIP DO-15 Protective 600Вт 1000pcs 27V
22219 СНГ 69 шт
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
Low frequency amplifier. 1 DIP14 DIP Amplifiers 100 pieces.
20066 69 шт
2 грн.
10+1,80 грн.
50+1,60 грн.
100+1,50 грн.
22787 СНГ 69 шт
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
Silicon, alloy. 0.3 DIP D104 150V 50mA Rectifier 100 pieces. single
20190 VISHAY 68 шт
4 грн.
10+3,80 грн.
30+3,60 грн.
50+3,20 грн.
DO-201 1.1 DIP DO-201AD Protective 1.5кВт 200pcs 200V
20538 NXP 68 шт
20 грн.
10+18 грн.
2.5 DIP TO-220 800V 13A 50pcs
22301 INTEGRAL 68 шт
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
2 DIP20 DIP Logics 70pcs
25904 СНГ 68 шт
8 грн.
50+7,20 грн.
200+6,40 грн.
500+5,60 грн.
Diodes KD202M silicon, diffusion. The main technical characteristics of the KD202M diode: • Uobr and max - Maximum impulse reverse voltage: 500 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 μA at Uobr 500 V 4.5 Screw КД-11 350V 5A Rectifier 100 pieces. single
22710 VISHAY 67 шт
7 грн.
10+6,30 грн.
50+5,60 грн.
0.3 DIP4 DIP 100 pieces.
21855 ATMEL 67 шт
62 грн.
10+58,90 грн.
50+55,80 грн.
100+49,60 грн.
5.7 DIP40 DIP Microcontrollers 10 pieces.
23395 VISHAY 67 шт
3.50 грн.
10+3,32 грн.
30+3,15 грн.
50+2,80 грн.
0.4 DIP DO-15 Protective 600Вт 1000pcs 300V
25816 Power Integrations 67 шт
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
0.5 SMD-8 SMD Nutrition 50pcs
25835 Power Integrations 67 шт
44 грн.
10+41,80 грн.
50+39,60 грн.
100+35,20 грн.
0.5 SMD-8B SMD Nutrition 50pcs
28532 ON SEMICONDUCTOR 67 шт
9 грн.
50+8,10 грн.
100+7,20 грн.
250+6,75 грн.
0.25 SMD 3Вт 2500pcs 18V SMB
21982 СНГ 66 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
K174XA1M chips are synchronous color subcarrier demodulators. They perform the functions of switching and limiting the SECAM signal, separating the color difference signal and locking the color channel when receiving a black and white image. Are intended for work in the decoding device SECAM of a color TV set. 1.5 DIP16 DIP TV 100 pieces.
20186 VISHAY 66 шт
4 грн.
10+3,80 грн.
30+3,60 грн.
50+3,20 грн.
DO-201 1.1 DIP DO-201AD Protective 1.5кВт 200pcs 120V
23075 ON SEMICONDUCTOR 66 шт
4.40 грн.
50+3,96 грн.
100+3,52 грн.
250+3,30 грн.
1 DIP 5Вт 500pcs 8V2 do201
23093 ON SEMICONDUCTOR 66 шт
4.40 грн.
50+3,96 грн.
100+3,52 грн.
250+3,30 грн.
1 DIP 5Вт 500pcs 56V do201
24916 FAIRCHILD SEMICONDUCTOR 66 шт
14 грн.
10+13,30 грн.
50+12,60 грн.
100+11,20 грн.
0.4 SO8 Field SMD MOS n-channel 30В 15А 2.5Вт 2000pcs
22967 СНГ 65 шт
25 грн.
50+22,50 грн.
200+20 грн.
500+17,50 грн.
Silicon diode, diffusion. 4 DIP КД-23 200V 10A Rectifier 200pcs single
23359 Taychipst 65 шт
3 грн.
10+2,85 грн.
30+2,70 грн.
50+2,40 грн.
0.4 DIP DO-15 Protective 600Вт 1000pcs 10V
26553 СНГ 65 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Logical element "12I-NOT" with three output states. 1 DIP16 DIP Logics 100 pieces.
28901 INTEGRAL 65 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors are silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP PNP 30Вт 100 pieces. 40В 7,5A 1МГц 80
20179 VISHAY 64 шт
8 грн.
10+7,60 грн.
30+7,20 грн.
50+6,40 грн.
DO-201 1.1 DIP DO-201AD Protective 1.5кВт 200pcs 400V
26108 СНГ 64 шт
10 грн.
Diode bridge 1.2A 400V 5.7 DIP 400V 1.2A Diode bridge 500pcs
26158 СНГ 64 шт
16 грн.
Diode assemblies KD205BT, each consisting of two silicon diffusion diodes, with separate leads. Designed to convert alternating voltage with a frequency of up to 5 kHz in power supply units of radio-electronic equipment. The main technical characteristics of the KD205BT diode: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 500 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 500 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 400 V 5.7 DIP 400V 500mA Rectifier 100 pieces. assembly