Active radio components

Results: 8086

MPN Article Brand In stock Price Discounts Quantity Description Weight g. Type of shell Transistor case type Transistor type Mounting type Type of shell Urev. max, V Ipr. max. Appointment Diode type Structure Drain-source voltage Drain current Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain Stabilization voltage Breakdown voltage Diode design
21130 ST MICROELECTRONICS 50 шт
25 грн.
10+22,50 грн.
50+20 грн.
2.8 DIP TO-220 600V 10A 50pcs
20352 MICROCHIP TECHNOLOGY 50 шт
17 грн.
10+16,15 грн.
50+15,30 грн.
100+13,60 грн.
download datasheet TN2524N8-G pdf,618 KB 0.2 SOT89-3 Field SMD MOS n-channel 240В 1.6Вт 2000pcs
21351 СНГ 50 шт
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
Transistors silicon epitaxial structures npn switching. Designed for use in line-scan output stages, ignition devices for internal combustion engines and other switching devices. Transistors KT805A, KT805B are produced in a glass-to-metal case with hard leads. The device type is indicated on the case. The mass of the transistor is not more than 24 g. Hull type: KTYU-3-20. Specifications: aA0.336.341 TU. 30 kt-282 Bipolar DIP NPN 30Вт 20pcs 60В 20МГц 15
21680 СНГ 50 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Two elements 4I-NOT with the ability to transfer the output to a high-impedance state when applied to the input E log. one 1 DIP14 DIP Logics 100 pieces.
26290 СНГ 50 шт
15 грн.
Varicaps KV106B silicon, epitaxial-diffusion, multiplying. Designed for use in frequency multiplication and frequency modulation circuits. The main technical parameters of the KV106B varicap: • Sd min - Minimum total capacitance: 15 pF at Uobr 4 V; • Sd max - Maximum total capacitance: 35 pF at Uobr 4 V; • Qв - Quality factor of varicap: 60; • Iobr - Constant reverse current: 20 μA at Uobr 90 V; • Uo6p - DC reverse voltage: 90 V; • Pnp - Forward power dissipation: 5 W; • Tacr - Working range of ambient temperature: -60... +100 °C. 6.5 Screw КД-11 5Вт 10 pieces.
26572 СНГ 50 шт
45 грн.
Assembly of two single-phase diode bridges. Designed for rectifying alternating current with a frequency of up to 5 kHz. 11 DIP 600V 1A Diode bridge 100 pieces.
29429 EVERLIGHT 50 шт
10 грн.
10+9 грн.
50+8 грн.
0.4 DIP6 DIP 65pcs
29430 EVERLIGHT 50 шт
10 грн.
10+9 грн.
50+8 грн.
0.4 SMD-6P SMD 3000pcs
29482 ON SEMICONDUCTOR 50 шт
22 грн.
10+19,80 грн.
50+17,60 грн.
0.5 SMD-6P SMD 1000pcs
29483 LITE-ON 50 шт
15 грн.
10+13,50 грн.
50+12 грн.
0.4 DIP6 DIP 65pcs
23396 VISHAY 49 шт
3.50 грн.
10+3,32 грн.
30+3,15 грн.
50+2,80 грн.
0.4 DIP DO-15 Protective 600Вт 1000pcs 300V
26305 СНГ 49 шт
6 грн.
50+5,40 грн.
100+4,80 грн.
250+4,50 грн.
Zener diodes KS531V silicon, diffusion-alloy, medium power, precision. Designed to stabilize the nominal voltage of 31 V in the stabilization current range of 3 to 15 mA with high requirements for voltage stability in the temperature range of -60...+100 °C. The main technical parameters of the KS531V zener diode: • Rated stabilization voltage: 31 V at Ist 10 mA; • Stabilization voltage spread: 29.45... 32.55 V; • Temperature coefficient of stabilization voltage: ±0.005%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 50 Ohm at Ist10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 15 mA; • Maximum allowable power dissipation on the zener diode: 0.5 W; • Working range of ambient temperature: -60... +100 °С. 0.5 DIP 500мВт 50pcs 31V
20987 SANKEN 48 шт
34 грн.
100+30,60 грн.
200+27,20 грн.
500+23,80 грн.
2 diodes in series. 2.5 DIP TO-220F 1500V 5A Damper 50pcs 2 diodes in series
24729 MARVELL 48 шт
174 грн.
10+165,30 грн.
50+156,60 грн.
100+139,20 грн.
2.5 QFP128 SMD ethernet 72pcs
25733 СНГ 48 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
Universal asynchronous transceiver (UART=UART) of digital information in binary code. It converts data from serial to parallel and vice versa. The receiver and transmitter operate independently of each other. It does not require a microcontroller to operate. The data format of the microcircuit corresponds to the data format of the RS232 interface. 7 DIP40 DIP Interfaces 20pcs
21468 ST MICROELECTRONICS 47 шт
34 грн.
10+32,30 грн.
50+30,60 грн.
100+27,20 грн.
5 HZIP11 DIP Amplifiers 25pcs
20991 VISHAY 47 шт
46 грн.
100+41,40 грн.
200+36,80 грн.
500+32,20 грн.
Snubber diode 10A, 1500V, 135ns 2.5 DIP TO-220F 1500V 10A Damper 50pcs single
REALTEK 47 шт
221 грн.
10+209,95 грн.
50+198,90 грн.
100+176,80 грн.
2 QFP128 SMD ethernet 66pcs
22464 FAIRCHILD SEMICONDUCTOR 47 шт
11 грн.
10+10,45 грн.
50+9,90 грн.
100+8,80 грн.
500+7,70 грн.
2.5 TO220 Bipolar DIP PNP 50Вт 50pcs 80В 1000
22478 ST MICROELECTRONICS 47 шт
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
500+4,90 грн.
2.5 TO220 Bipolar DIP NPN 40Вт 50pcs 250В 10МГц 30
26551 СНГ 47 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
ALU for writing two 4-bit words. 5 DIP24 DIP Logics 36pcs
26846 СНГ 47 шт
1 грн.
50+0,90 грн.
200+0,80 грн.
500+0,70 грн.
Diodes KD208A silicon, diffusion, rectifier. Designed to convert alternating voltage with a frequency of up to 1.0 kHz. The main technical characteristics of the KD208A diode: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 1.5 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 100 µA at Uobr 100 V. 0.3 DIP 100V 1.5A Rectifier 1000pcs single
21973 СНГ 46 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
3-bit high level decoder. 1.5 DIP16 DIP Logics 90pcs
21002 INTERNATIONAL RECTIFIER 46 шт
27 грн.
100+24,30 грн.
200+21,60 грн.
500+18,90 грн.
1.8 DIP TO-220 80V 8A Schottky 50pcs single
22886 ATHEROS 46 шт
108 грн.
10+102,60 грн.
50+97,20 грн.
100+86,40 грн.
0.5 QFN48 SMD ethernet 200pcs
21930 СНГ 46 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
The main characteristics of the chip KR142EN5G (KREN5G) Output voltage 6V Output current 1.5A Maximum input voltage 15V Voltage difference input-output 2.5 V Power dissipation (with heat sink) 10 W Output voltage accuracy ±0.24V Operating temperature range -45…+70 °C 2.8 TO-220 DIP Nutrition 100 pieces.
21266 СНГ 46 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Synchronous four-digit binary-decimal counter. 1.1 DIP16 DIP Logics 100 pieces.
22479 ON SEMICONDUCTOR 46 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
500+5,60 грн.
2.5 TO220 Bipolar DIP NPN 40Вт 50pcs 300В 10МГц 30
24834 TEXAS INSTRUMENTS 46 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
0.4 SO8 DIP Interfaces 2000pcs
26307 СНГ 46 шт
7 грн.
The main technical characteristics of the KTs405D diode: • Uopp max - Maximum direct reverse voltage: 200 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 µA at Uobr 200 V. 5.2 DIP 200V 1A Diode bridge 500pcs