Active radio components

Results: 8086

	MPN	Article	Brand	In stock	Price	Discounts	Quantity	Description	Weight g.	Type of shell	Transistor case type	Transistor type	Mounting type	Type of shell	Urev. max, V	Ipr. max.	Ipr. imp. max.	Appointment	Diode type	Structure	Drain-source voltage	Drain current	Power	Factory packaging	Collector-emitter voltage	Collector current	Frequency	Current gain	Breakdown voltage	Diode design

Chip KM531IR20 (=Am25S09)

#14346

26554

СНГ

43 шт

8 грн.

10+	7,60 грн.
50+	7,20 грн.
100+	6,40 грн.

4-bit two-input register.

1.2

DIP16

—

DIP

—

Logics

—

100 pieces.

—

Chip KR1008VZH5

#8444

22289

СНГ

42 шт

30 грн.

10+	28,50 грн.
50+	27 грн.
100+	24 грн.

Electronic dialer for push-button telephones and devices with a pulse dialing method, with a memory for 10 eighteen-digit numbers (RAM for 22 digits).

DIP22

—

DIP

—

Telephony

—

60pcs

—

Thyristor KU102B

#13693

25853

СНГ

42 шт

12 грн.

Silicon thyristors KU102B, diffusion, pnpn structures, triode, lockable. Designed for use as low power switching elements. The main technical parameters of the thyristor KU102B: • Maximum DC reverse voltage: 5 V; • Maximum DC voltage in closed state: 100 V; • Maximum repetitive pulse current in the open state: 5 A; • Repetitive pulse current in the open state: 0.05 A; • Voltage in the open state: no more than 2.5 V; • Non-opening constant control voltage: not less than 0.2 V; • Direct current in the closed state: not less than 0.15 mA; • Blocking impulse control current: 20 mA; • Constant unlocking control voltage: 12 V; • Voltage slew rate in closed state: 200 V/µs; • Turn-on time: 5 µs; • Turn-off time: 20 µs • Working range of ambient temperature: -60... +125 °С.

1.2

—

DIP

—

100V

—

100 pieces.

—

Diode bridge KTS405ZH

#14365

26577

СНГ

42 шт

7 грн.

The main technical characteristics of the KTs405Zh diode: • Uopp max - Maximum direct reverse voltage: 600 V; • Inp max - Maximum forward current: 600 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 600 mA; • Iobr - Constant reverse current: no more than 125 µA at Uobr 600 V.

5.2

—

DIP

—

600V

600mA

—

Diode bridge

—

500pcs

—

1.5KE36CA, Bidirectional protective diode, 1500W, 36V

#16603

28882

VISHAY

42 шт

7 грн.

10+	6,65 грн.
30+	6,30 грн.
50+	5,60 грн.

1.5KW series transient voltage suppressors

1.1

—

DIP

DO-201AD

—

Protective

—

1.5кВт

200pcs

—

36V

—

Transistor TIP31C

#2330

20922

NXP

41 шт

7 грн.

10+	6,65 грн.
50+	6,30 грн.
100+	5,60 грн.
500+	4,90 грн.

2.5

—

TO220

Bipolar

DIP

—

NPN

—

40Вт

50pcs

100В

3А

—

Diode Bridge KBPC1010

#9858

21637

SEP

41 шт

20 грн.

10+	18 грн.
50+	16 грн.
100+	15 грн.

(1000V;10A)

—

CD74AC04E (=KR1554LN1)

#10332

22318

TEXAS INSTRUMENTS

41 шт

20 грн.

10+	19 грн.
50+	18 грн.
100+	16 грн.

DIP14

—

DIP

—

Logics

—

25pcs

—

Thyristor KU228B

#10730

22795

СНГ

41 шт

12 грн.

Silicon thyristors KU228B, diffusion-alloy, triode, non-lockable. Designed for use as switching elements. Hull type: KT-28 (TO-220). Specifications: aA0.336.644 TU. The main technical parameters of the thyristor KU228B: • Repetitive impulse voltage: 100 V; • Repetitive impulse voltage in the closed state: 100 V; • Maximum repetitive pulse current in the open state: 30 A; • Average pulse current in the open state: 10 A; • Repetitive pulse current in the closed state: no more than 2 mA; • Voltage slew rate in closed state: 20 V/µs; • Turn-on time: no more than 2 microseconds; • Turn-off time: no more than 40 µs

2.5

—

DIP

TO-220

100V

10A

—

100 pieces.

—

P6KE18A, Protective Diode, 600W, 18V

#11236

23365

Taychipst

41 шт

3 грн.

10+	2,85 грн.
30+	2,70 грн.
50+	2,40 грн.

0.4

—

DIP

DO-15

—

Protective

—

600Вт

1000pcs

—

18V

—

Chip MSC5518 (=LX5518 LX5518LQ-TR)

#12583

24920

Microsemi

41 шт

97 грн.

10+	92,15 грн.
50+	87,30 грн.
100+	77,60 грн.

0.3

QFN16

—

SMD

—

Amplifiers

—

1000pcs

—

Chip KR551UD2A

#13769

25939

СНГ

41 шт

22 грн.

10+	20,90 грн.
50+	19,80 грн.
100+	17,60 грн.

Operational amplifier of medium precision.

DIP14

—

DIP

—

Amplifiers

—

100 pieces.

—

Varicap KV106A

#14111

26289

СНГ

41 шт

15 грн.

Varicaps KV106A silicon, epitaxial-diffusion, multiplying. Designed for use in frequency multiplication and frequency modulation circuits. The main technical parameters of the KV106A varicap: • Sd min - Minimum total capacitance: 20 pF at Uobr 4 V; • Sd max - Maximum total capacitance: 50 pF at Uobr 4 V; • Qв - Quality factor of the varicap: 40; • Iobr - Constant reverse current: 20 μA at Uobr 120 V; • Uo6p - DC reverse voltage: 120 V; • Pnp - Forward power dissipation: 7 W; • Tacr - Working range of ambient temperature: -60... +100 °C.

6.5

—

Screw

КД-11

—

7Вт

10 pieces.

—

Diode KD521A

#16199

28445

СНГ

41 шт

1 грн.

50+	0,90 грн.
200+	0,80 грн.
500+	0,70 грн.

The main technical characteristics of the KD521A diode: • Uopp max - Maximum direct reverse voltage: 75 V; • Inp max - Maximum forward current: 50 mA; • Unp - DC forward voltage: no more than 1 V at Inp 50 mA; • Iobr - Constant reverse current: no more than 1 μA at Uobr 75 V; • tvoc arr - Reverse recovery time: 0.004 µs; • Sd - Total capacitance: 4 pF.

0.2

—

DIP

КД-2

75V

50mA

500mA

—

Pulse

—

3000pcs

—

Transistor 1T403B (=GT403B)

#16886

29133

СНГ

41 шт

25 грн.

10+	23,75 грн.
50+	22,50 грн.
100+	20 грн.

Transistor 1T403B germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, converters and DC stabilizers.

—

Bipolar

DIP

—

PNP

—

4Вт

100 pieces.

30В

1,25А

—

150

—

GBU610 diode bridge

#17055

29305

SEP

41 шт

12 грн.

10+	10,80 грн.
50+	9,60 грн.
100+	9 грн.

Diode bridge 1000V, 6A.

3.7

—

SMD

—

1000V

—

200pcs

—

TN2524N8-G (TN5CT)

#6176

20352

MICROCHIP TECHNOLOGY

40 шт

17 грн.

10+	16,15 грн.
50+	15,30 грн.
100+	13,60 грн.

download datasheet TN2524N8-G pdf,618 KB

0.2

—

SOT89-3

Field

SMD

—

MOS n-channel

240В

1А

1.6Вт

2000pcs

—

Diode 2D213G (=KD213G)

#8885

22966

СНГ

40 шт

25 грн.

50+	22,50 грн.
200+	20 грн.
500+	17,50 грн.

Silicon diode, diffusion. The main technical characteristics of the diode 2D213G: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1.2 V at Inp 10 A; • Iobr - Constant reverse current: no more than 200 µA at Uobr 100 V; • tvoc arr - Reverse recovery time: 0.3 µs; • Sd - Total capacitance: 550 pF at Uobr 100 V.

—

DIP

КД-23

100V

10A

—

Rectifier

—

100 pieces.

—

single

Chip A40MX04-PL44

#9867

21646

ACTEL

40 шт

985 грн.

10+	935,75 грн.
50+	886,50 грн.
100+	788 грн.

FPGA - Field Programmable Gate Array MX

PLCC44

—

SMD

—

Microcontrollers

—

27pcs

—

Chip РХ3.410.000 (04ХП001)

#10435

22447

СНГ

40 шт

240 грн.

10+	228 грн.
50+	216 грн.
100+	192 грн.

Decider for amplitude-time selection of input signals.

3.7

—

DIP

—

Logics

—

40pcs

—

P6KE8.2A, Protective Diode, 600W, 8.2V

#11224

23356

Taychipst

40 шт

3 грн.

10+	2,85 грн.
30+	2,70 грн.
50+	2,40 грн.

0.4

—

DIP

DO-15

—

Protective

—

600Вт

1000pcs

—

8.2V

—

Diode block KTS401A

#11630

23860

СНГ

40 шт

12 грн.

50+	10,80 грн.
200+	9,60 грн.
500+	8,40 грн.

A block of silicon, diffusion diodes connected according to a voltage doubler circuit.

—

DIP

—

500V

400mA

—

Rectifier

—

20pcs

—

assembly

Chip PX3.439.006 (04KT)

#11799

24028

СНГ

40 шт

480 грн.

10+	456 грн.
50+	432 грн.
100+	384 грн.

Current switch for generating current pulses on the load resistances connected to the outputs when voltage pulses arrive at the control inputs.

3.5

—

DIP

—

Nutrition

—

40pcs

—

Chip PX3.430.035 (PU003)

#11801

24030

СНГ

40 шт

984 грн.

10+	934,80 грн.
50+	885,60 грн.
100+	787,20 грн.

Designed, together with external elements, to convert a bipolar quasi-ternary signal in the NDV-3 or AMI code into a unipolar binary digital signal at the reception and inverse conversion at the transmission.

7.5

—

DIP

—

Telephony

—

16pcs

—

Chip PX3.421.021-01 (04UP014)

#11802

24031

СНГ

40 шт

324 грн.

10+	307,80 грн.
50+	291,60 грн.
100+	259,20 грн.

Purpose - conversion of a sinusoidal signal into a sequence of rectangular pulses.

5.3

—

DIP

—

Telephony

—

32pcs

—

Chip K599LD1

#14355

26566

СНГ

40 шт

10 грн.

10+	9,50 грн.
50+	9 грн.
100+	8 грн.

Two OR expanders (4OR)2.

DIP14

—

DIP

—

Logics

—

100 pieces.

—

Transistor P201E

#16183

28457

СНГ

40 шт

15 грн.

10+	14,25 грн.
50+	13,50 грн.
100+	12 грн.

Characteristics of the transistor P201E: PNP structure Uk-e.max. 22V Uk-b.max. 30V Ik.max (permanent) 1.5A Ib.max. (permanent) 0.75A Pk.max. (without heatsink) 1.0W Pk.max. (with heat sink) 10W Switching power, max 30W Ik.obr., at t=+20ºC no more than 0.02-0.4mA Ik.obr., at t=+60ºC no more than 0.2-3.5mA h21e 40..100 fgr. 100kHz Ub-e.us 0.5-2.0V Uk-e.us 0.5-2.5V Temperature range -55..+70°C.

—

Bipolar

DIP

—

PNP

—

10Вт

50pcs

30В

1.5А

0,1МГц

100

—

Transistor P605

#16946

29193

СНГ

40 шт

15 грн.

10+	14,25 грн.
50+	13,50 грн.
100+	12 грн.

Universal germanium transistor of pnp structure. Designed for use in amplifier, generator and pulse stages of low and high frequency up to 30 MHz.

9.2

—

Bipolar

DIP

—

PNP

—

3Вт

50pcs

40В

1.5А

30МГц

—

Diode DMV32

#4301

20968

ST MICROELECTRONICS

39 шт

25 грн.

100+	22,50 грн.
200+	20 грн.
500+	17,50 грн.

1.8

—

DIP

TO-220

1500V

—

Damper

—

50pcs

—

2 diodes in series

Transistor STD888T4 (D888)

#4658

20060

ST MICROELECTRONICS

39 шт

11 грн.

10+	10,45 грн.
50+	9,90 грн.
100+	8,80 грн.
500+	7,70 грн.

0.5

—

DPAK

Bipolar

SMD

—

PNP

—

15Вт

2500pcs

30В

5А

—