Active radio components

Results: 8086

MPN Article Brand In stock Price Discounts Quantity Description Weight g. Type of shell Transistor case type Transistor type Mounting type Type of shell Urev. max, V Ipr. max. Ipr. imp. max. Appointment Diode type Structure Power Factory packaging Collector-emitter voltage Collector current Current gain Breakdown voltage Diode design
28395 СНГ 46 шт
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
Diodes D102A silicon, point, universal. Designed to work in TV video channels, in AGC systems and discriminators of FM and AM receivers. 0.3 DIP D104 50V 30mA Rectifier 100 pieces. single
21022 FAIR 45 шт
26 грн.
10+24,70 грн.
50+23,40 грн.
100+20,80 грн.
0.5 DIP8 DIP Nutrition 50pcs
20988 SANKEN 45 шт
22 грн.
100+19,80 грн.
200+17,60 грн.
500+15,40 грн.
2.5 DIP TO-220F 600V 6A Fast 50pcs double common cathode
21131 ST MICROELECTRONICS 45 шт
28 грн.
10+25,20 грн.
50+22,40 грн.
2.8 DIP TO-220 600V 12A 50pcs
22507 FAIRCHILD SEMICONDUCTOR 45 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
0.5 SO14 SMD Amplifiers 2000pcs
25114 TEXAS INSTRUMENTS 45 шт
60 грн.
10+57 грн.
50+54 грн.
100+48 грн.
2.5 TO263-5 SMD Nutrition 1000pcs
25686 СНГ 45 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
RAM storage matrix for 16 bits. 1 DIP14 DIP Memory 100 pieces.
26633 СНГ 45 шт
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
Electronic dialer. 3.2 DIP Telephony 32pcs
27868 TEXAS INSTRUMENTS 45 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
0.3 TO-92 DIP Nutrition 200pcs
28384 СНГ 45 шт
30 грн.
50+27 грн.
200+24 грн.
500+21 грн.
The main technical characteristics of the diode D233B: • Uopp max - Maximum direct reverse voltage: 500 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1.5 V at Inp 5 A; • Iobr - Constant reverse current: no more than 3000 µA at Uobr 500 V. 11 Screw КДЮ-11 500V 5A Rectifier 40pcs single
20976 PANASONIC SEMICONDUCTOR 44 шт
125 грн.
10+118,75 грн.
50+112,50 грн.
100+100 грн.
2.8 TO-220-7 DIP Nutrition 50pcs
21348 СНГ 43 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
KM155TM8 chips are a quad D-flip-flop. 1.3 DIP16 DIP Logics 100 pieces.
20969 PHILIPS 43 шт
16 грн.
100+14,40 грн.
200+12,80 грн.
500+11,20 грн.
2.9 DIP TO-220F 600V 8A Fast 50pcs single
22387 43 шт
20 грн.
Designed for use in pulse devices as switching elements. The main technical parameters of the thyristor 2N102B: • Maximum DC reverse voltage: 10 V; • Maximum DC voltage in closed state: 7 V; • Maximum repetitive pulse current in the open state: 10 A; • Average pulse current in the open state: 0.2 A; • Voltage in the open state: no more than 1.5 V; • Non-opening constant control voltage: 3 V; • Direct current in the closed state: no more than 0.08 mA; • Constant reverse current: no more than 0.5 mA; • Constant unlocking control voltage: 28 V; • Turn-off time: no more than 40 microseconds.
26554 СНГ 43 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
4-bit two-input register. 1.2 DIP16 DIP Logics 100 pieces.
29304 DIOTEC SEMICONDUCTOR 43 шт
13 грн.
10+11,70 грн.
50+10,40 грн.
100+9,75 грн.
Diode bridge 1000V, 4A. 3.7 SMD 1000V 200pcs
20060 ST MICROELECTRONICS 42 шт
11 грн.
10+10,45 грн.
50+9,90 грн.
100+8,80 грн.
500+7,70 грн.
0.5 DPAK Bipolar SMD PNP 15Вт 2500pcs 30В
20600 FAIRCHILD SEMICONDUCTOR 42 шт
1 грн.
10+0,95 грн.
50+0,90 грн.
100+0,80 грн.
500+0,70 грн.
0.3 TO92 Bipolar DIP PNP 500мВт 4000pcs 45В 100мА 450
22289 СНГ 42 шт
30 грн.
10+28,50 грн.
50+27 грн.
100+24 грн.
Electronic dialer for push-button telephones and devices with a pulse dialing method, with a memory for 10 eighteen-digit numbers (RAM for 22 digits). 3 DIP22 DIP Telephony 60pcs
25853 СНГ 42 шт
12 грн.
Silicon thyristors KU102B, diffusion, pnpn structures, triode, lockable. Designed for use as low power switching elements. The main technical parameters of the thyristor KU102B: • Maximum DC reverse voltage: 5 V; • Maximum DC voltage in closed state: 100 V; • Maximum repetitive pulse current in the open state: 5 A; • Repetitive pulse current in the open state: 0.05 A; • Voltage in the open state: no more than 2.5 V; • Non-opening constant control voltage: not less than 0.2 V; • Direct current in the closed state: not less than 0.15 mA; • Blocking impulse control current: 20 mA; • Constant unlocking control voltage: 12 V; • Voltage slew rate in closed state: 200 V/µs; • Turn-on time: 5 µs; • Turn-off time: 20 µs • Working range of ambient temperature: -60... +125 °С. 1.2 DIP 100V 5A 100 pieces.
26577 СНГ 42 шт
7 грн.
The main technical characteristics of the KTs405Zh diode: • Uopp max - Maximum direct reverse voltage: 600 V; • Inp max - Maximum forward current: 600 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 600 mA; • Iobr - Constant reverse current: no more than 125 µA at Uobr 600 V. 5.2 DIP 600V 600mA Diode bridge 500pcs
28882 VISHAY 42 шт
7 грн.
10+6,65 грн.
30+6,30 грн.
50+5,60 грн.
1.5KW series transient voltage suppressors 1.1 DIP DO-201AD Protective 1.5кВт 200pcs 36V
20922 NXP 41 шт
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
500+4,90 грн.
2.5 TO220 Bipolar DIP NPN 40Вт 50pcs 100В 50
21637 SEP 41 шт
20 грн.
10+18 грн.
50+16 грн.
100+15 грн.
(1000V;10A)
22318 TEXAS INSTRUMENTS 41 шт
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
1 DIP14 DIP Logics 25pcs
22795 СНГ 41 шт
12 грн.
Silicon thyristors KU228B, diffusion-alloy, triode, non-lockable. Designed for use as switching elements. Hull type: KT-28 (TO-220). Specifications: aA0.336.644 TU. The main technical parameters of the thyristor KU228B: • Repetitive impulse voltage: 100 V; • Repetitive impulse voltage in the closed state: 100 V; • Maximum repetitive pulse current in the open state: 30 A; • Average pulse current in the open state: 10 A; • Repetitive pulse current in the closed state: no more than 2 mA; • Voltage slew rate in closed state: 20 V/µs; • Turn-on time: no more than 2 microseconds; • Turn-off time: no more than 40 µs 2.5 DIP TO-220 100V 10A 100 pieces.
24920 Microsemi 41 шт
97 грн.
10+92,15 грн.
50+87,30 грн.
100+77,60 грн.
0.3 QFN16 SMD Amplifiers 1000pcs
25939 СНГ 41 шт
22 грн.
10+20,90 грн.
50+19,80 грн.
100+17,60 грн.
Operational amplifier of medium precision. 1 DIP14 DIP Amplifiers 100 pieces.
26289 СНГ 41 шт
15 грн.
Varicaps KV106A silicon, epitaxial-diffusion, multiplying. Designed for use in frequency multiplication and frequency modulation circuits. The main technical parameters of the KV106A varicap: • Sd min - Minimum total capacitance: 20 pF at Uobr 4 V; • Sd max - Maximum total capacitance: 50 pF at Uobr 4 V; • Qв - Quality factor of the varicap: 40; • Iobr - Constant reverse current: 20 μA at Uobr 120 V; • Uo6p - DC reverse voltage: 120 V; • Pnp - Forward power dissipation: 7 W; • Tacr - Working range of ambient temperature: -60... +100 °C. 6.5 Screw КД-11 7Вт 10 pieces.
28445 СНГ 41 шт
1 грн.
50+0,90 грн.
200+0,80 грн.
500+0,70 грн.
The main technical characteristics of the KD521A diode: • Uopp max - Maximum direct reverse voltage: 75 V; • Inp max - Maximum forward current: 50 mA; • Unp - DC forward voltage: no more than 1 V at Inp 50 mA; • Iobr - Constant reverse current: no more than 1 μA at Uobr 75 V; • tvoc arr - Reverse recovery time: 0.004 µs; • Sd - Total capacitance: 4 pF. 0.2 DIP КД-2 75V 50mA 500mA Pulse 3000pcs