Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Breakdown voltage | Diode design |
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Transistor 1T403B (=GT403B)
#16886
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29133 | СНГ | 41 шт |
25 грн.
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Transistor 1T403B germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, converters and DC stabilizers. | 3 | — | — | Bipolar | DIP | — | — | — | — | — | PNP | 4Вт | 100 pieces. | 30В | 1,25А | — | 150 | — | — | — | — | ||||||||||
GBU610 diode bridge
#17055
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29305 | SEP | 41 шт |
12 грн.
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Diode bridge 1000V, 6A. | 3.7 | — | — | — | SMD | — | 1000V | 6A | — | — | — | — | 200pcs | — | — | — | — | — | — | — | — | ||||||||||
Diode 2D213G (=KD213G)
#8885
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22966 | СНГ | 40 шт |
25 грн.
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Silicon diode, diffusion. The main technical characteristics of the diode 2D213G: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1.2 V at Inp 10 A; • Iobr - Constant reverse current: no more than 200 µA at Uobr 100 V; • tvoc arr - Reverse recovery time: 0.3 µs; • Sd - Total capacitance: 550 pF at Uobr 100 V. | 4 | — | — | — | DIP | КД-23 | 100V | 10A | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | — | single | ||||||||||
Chip A40MX04-PL44
#9867
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21646 | ACTEL | 40 шт |
985 грн.
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FPGA - Field Programmable Gate Array MX | 3 | PLCC44 | — | — | SMD | — | — | — | Microcontrollers | — | — | — | 27pcs | — | — | — | — | — | — | — | — | ||||||||||
Chip РХ3.410.000 (04ХП001)
#10435
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22447 | СНГ | 40 шт |
240 грн.
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Decider for amplitude-time selection of input signals. | 3.7 | — | — | — | DIP | — | — | — | Logics | — | — | — | 40pcs | — | — | — | — | — | — | — | — | ||||||||||
| 23356 | Taychipst | 40 шт |
3 грн.
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0.4 | — | — | — | DIP | DO-15 | — | — | — | Protective | — | 600Вт | 1000pcs | — | — | — | — | — | — | 8.2V | — | ||||||||||||
Diode block KTS401A
#11630
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23860 | СНГ | 40 шт |
12 грн.
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A block of silicon, diffusion diodes connected according to a voltage doubler circuit. | 75 | — | — | — | DIP | — | 500V | 400mA | — | Rectifier | — | — | 20pcs | — | — | — | — | — | — | — | assembly | ||||||||||
Chip PX3.439.006 (04KT)
#11799
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24028 | СНГ | 40 шт |
480 грн.
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Current switch for generating current pulses on the load resistances connected to the outputs when voltage pulses arrive at the control inputs. | 3.5 | — | — | — | DIP | — | — | — | Nutrition | — | — | — | 40pcs | — | — | — | — | — | — | — | — | ||||||||||
Chip PX3.430.035 (PU003)
#11801
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24030 | СНГ | 40 шт |
984 грн.
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Designed, together with external elements, to convert a bipolar quasi-ternary signal in the NDV-3 or AMI code into a unipolar binary digital signal at the reception and inverse conversion at the transmission. | 7.5 | — | — | — | DIP | — | — | — | Telephony | — | — | — | 16pcs | — | — | — | — | — | — | — | — | ||||||||||
| 24031 | СНГ | 40 шт |
324 грн.
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Purpose - conversion of a sinusoidal signal into a sequence of rectangular pulses. | 5.3 | — | — | — | DIP | — | — | — | Telephony | — | — | — | 32pcs | — | — | — | — | — | — | — | — | |||||||||||
Chip K599LD1
#14355
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26566 | СНГ | 40 шт |
10 грн.
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Two OR expanders (4OR)2. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Transistor P201E
#16183
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28457 | СНГ | 40 шт |
15 грн.
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Characteristics of the transistor P201E: PNP structure Uk-e.max. 22V Uk-b.max. 30V Ik.max (permanent) 1.5A Ib.max. (permanent) 0.75A Pk.max. (without heatsink) 1.0W Pk.max. (with heat sink) 10W Switching power, max 30W Ik.obr., at t=+20ºC no more than 0.02-0.4mA Ik.obr., at t=+60ºC no more than 0.2-3.5mA h21e 40..100 fgr. 100kHz Ub-e.us 0.5-2.0V Uk-e.us 0.5-2.5V Temperature range -55..+70°C. | 10 | — | — | Bipolar | DIP | — | — | — | — | — | PNP | 10Вт | 50pcs | 30В | 1.5А | 0,1МГц | 100 | — | — | — | — | ||||||||||
Transistor P605
#16946
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29193 | СНГ | 40 шт |
15 грн.
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Universal germanium transistor of pnp structure. Designed for use in amplifier, generator and pulse stages of low and high frequency up to 30 MHz. | 9.2 | — | — | Bipolar | DIP | — | — | — | — | — | PNP | 3Вт | 50pcs | 40В | 1.5А | 30МГц | 60 | — | — | — | — | ||||||||||
Diode bridge DB157S
#3391
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22491 | SEP | 39 шт |
3 грн.
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0.5 | — | — | — | SMD | DBS | 1000V | 1.5A | — | Diode bridge | — | — | 2000pcs | — | — | — | — | — | — | — | — | |||||||||||
| 20963 | First | 39 шт |
10 грн.
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2.5 | — | — | — | DIP | TO-220 | 100V | 10A | — | Schottky | — | — | 50pcs | — | — | — | — | — | — | — | double common cathode | ||||||||||||
Diode DMV32
#4301
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20968 | ST MICROELECTRONICS | 39 шт |
25 грн.
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1.8 | — | — | — | DIP | TO-220 | 1500V | 6A | — | Damper | — | — | 50pcs | — | — | — | — | — | — | — | 2 diodes in series | |||||||||||
Transistor TIP112
#6652
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22462 | SAMSUNG | 39 шт |
11 грн.
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2.5 | — | TO220 | Bipolar | DIP | — | — | — | — | — | NPN | 50Вт | 50pcs | 100В | 2А | — | 1000 | — | — | — | — | |||||||||||
| 21929 | СНГ | 39 шт |
10 грн.
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The main technical parameters of the KR142EN5B chip: • Output voltage: 6 ±0.12 V; • Output current: 2 A; • Input voltage: 15 V; • Current instability: 1.33%/A; • Voltage instability: 0.05%/V; • Operating temperature range: -45...+70°C. | 2.8 | TO-220 | — | — | DIP | — | — | — | Nutrition | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | |||||||||||
| 21353 | СНГ | 39 шт |
100 грн.
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Transistor silicon mezaplanar structure npn switching. Designed for use in switching devices, in DC voltage converters, high-voltage stabilizers. The 2T826A transistor is available in a metal case with glass insulators and hard leads. The device type is indicated on the case. The 2T826A transistor is produced in the form of undivided crystals with pads on the plate for hybrid integrated circuits. The type of device is indicated on the label. The mass of a transistor in a metal case is not more than 20 g, a crystal is not more than 0.01 g. Hull type: KT-9 (TO-3). Specifications: aA0.339.058 TU. | 14 | — | kt-9 | Bipolar | DIP | — | — | — | — | — | NPN | 15Вт | 40pcs | 700В | 1А | 6МГц | 10 | — | — | — | — | |||||||||||
Transistor 2SC2654
#10471
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22496 | NEC | 39 шт |
9.50 грн.
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2.5 | — | TO220 | Bipolar | DIP | — | — | — | — | — | NPN | 40Вт | 50pcs | 100В | 7А | — | 320 | — | — | — | — | |||||||||||
Triac BT132-600D (132-6D)
#10491
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22536 | NXP | 39 шт |
5 грн.
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0.3 | — | — | — | DIP | TO-92 | 600V | 1A | — | — | — | — | 1000pcs | — | — | — | — | — | — | — | — | |||||||||||
Chip 79L08 (=KR1168EN8A)
#11368
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23476 | ST MICROELECTRONICS | 39 шт |
5 грн.
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Stabilizer -8V/0.1A | 0.3 | TO-92 | — | — | DIP | — | — | — | Nutrition | — | — | — | 500pcs | — | — | — | — | — | — | — | — | ||||||||||
Chip 24LC01B-I/SN
#12756
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25112 | MICROHCHIP | 39 шт |
11 грн.
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0.4 | SO8 | — | — | SMD | — | — | — | Memory | — | — | — | 2000pcs | — | — | — | — | — | — | — | — | |||||||||||
Chip KS500TM133
#13583
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25729 | СНГ | 39 шт |
6 грн.
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4 D-lets | 1.5 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | — | ||||||||||
Chip KM500LM105
#13585
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25732 | СНГ | 39 шт |
8 грн.
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The microcircuit is 3 logic elements OR-NOT/OR. | 1 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | — | ||||||||||
Chip KR1407UD3
#13720
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25888 | СНГ | 39 шт |
10 грн.
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KR1407UD3 microcircuits are a low-noise broadband operational amplifier with adjustable control current and are used as video amplifiers, sensitive preamplifiers of photoresistors. Optimized for signal sources from 100 ohms to 10 k ohms. | 0.5 | DIP8 | — | — | DIP | — | — | — | Amplifiers | — | — | — | 200pcs | — | — | — | — | — | — | — | — | ||||||||||
Zener diode KS510A
#16629
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28867 | СНГ | 39 шт |
6 грн.
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Zener diodes KS510A are silicon, planar, medium power. Designed to stabilize a rated voltage of 10 V in the stabilization current range of 1...79 mA. | 0.8 | — | — | — | DIP | — | — | — | — | — | — | 1Вт | 100 pieces. | — | — | — | — | 10V | kd-8 | — | — | ||||||||||
Chip K170AA2
#870
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22191 | СНГ | 38 шт |
6 грн.
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Formation of the incoming current at 500 mA. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Chip 78L15
#3520
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20566 | ST MICROELECTRONICS | 38 шт |
3 грн.
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Stabilizer 15V/0.1A | 0.3 | TO-92 | — | — | DIP | — | — | — | Nutrition | — | — | — | 1000pcs | — | — | — | — | — | — | — | — | ||||||||||
Diode RHRP860C
#4305
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20964 | FAIRCHILD SEMICONDUCTOR | 38 шт |
30 грн.
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1.8 | — | — | — | DIP | TO-220 | 600V | 8A | — | Fast | — | — | 50pcs | — | — | — | — | — | — | — | double common cathode |
