Active radio components

Results: 8086

MPN Article Brand In stock Price Discounts Quantity Description Weight g. Type of shell Transistor case type Transistor type Mounting type Type of shell Urev. max, V Ipr. max. Appointment Diode type Structure Drain-source voltage Drain current Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain Stabilization voltage Zener diode housing type Diode design
22907 INFINEON TECHNOLOGIES 4 шт
26 грн.
10+24,70 грн.
50+23,40 грн.
100+20,80 грн.
0.5 DIP8 — — DIP — — — Nutrition — — — — — 50pcs — — — — — — —
21166 PANASONIC SEMICONDUCTOR 4 шт
26 грн.
10+24,70 грн.
50+23,40 грн.
100+20,80 грн.
ULF 2.3W (18V/16 Ohm), el. reg. volume 3 HSIP9 — — DIP — — — Amplifiers — — — — — 20pcs — — — — — — —
22278 СНГ 4 шт
14 грн.
10+13,30 грн.
50+12,60 грн.
100+11,20 грн.
Static Random Access Memory with 4 kbit (4k x 1) capacity management scheme. 2.5 DIP18 — — DIP — — — Memory — — — — — 80pcs — — — — — — —
20065 ALPHA OMEGA SEMICONDUCTOR 4 шт
14 грн.
10+13,30 грн.
50+12,60 грн.
100+11,20 грн.
0.6 — SO8 Field SMD — — — — — MOS n-channel 40В 10А 1.7Вт 95pcs — — — — — — —
20327 — 4 шт
72 грн.
10+68,40 грн.
50+64,80 грн.
100+57,60 грн.
— — — — — — — — — — — — — — — — — — — — — — —
20332 — 4 шт
120 грн.
10+114 грн.
50+108 грн.
100+96 грн.
— — — — — — — — — — — — — — — — — — — — — — —
26842 СНГ 4 шт
8 грн.
10+7,20 грн.
50+6,40 грн.
AOD101G Diode optocouplers. They are formed by an emitting diode based on a gallium-aluminum arsenide compound and a silicon photodiode. 1 — — — DIP — — — — — — — — — 100 pieces. — — — — — — —
22089 СНГ 4 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
Three elements of OR-NOT. 1.2 DIP16 — — DIP — — — Logics — — — — — 90pcs — — — — — — —
21434 СНГ 4 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Four two-input elements OR-NOT. 1 DIP14 — — DIP — — — Logics — — — — — 100 pieces. — — — — — — —
21441 СНГ 4 шт
35 грн.
10+33,25 грн.
50+31,50 грн.
100+28 грн.
The 589IK03 chip is an accelerated transfer circuit (RMS) and is designed to form group transfers when used in conjunction with a central processing unit (CPE) or any other circuit that has transfer preview outputs. One CMS scheme allows you to organize a 16-bit adder on the CPE or a 32-bit adder on arithmetic logic circuits with 4 bits. The IC has 17 information inputs, 8 information outputs and 1 control input, which allows you to control the output of the highest transfer, transferring it to the third state. 5 DIP28 — — DIP — — — Logics — — — — — 40pcs — — — — — — —
21972 СНГ 4 шт
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
2 logic gates OR-AND 1.3 DIP16 — — DIP — — — Logics — — — — — 90pcs — — — — — — —
24043 СНГ 4 шт
31 грн.
10+29,45 грн.
50+27,90 грн.
100+24,80 грн.
Repeater amplifier with positive pulse polarity. 2 DIP14 — — DIP — — — Nutrition — — — — — 20pcs — — — — — — —
24127 СНГ 4 шт
170 грн.
10+161,50 грн.
50+153 грн.
100+136 грн.
Transistors KT803A silicon mezaplanar structures npn universal. Designed for use in DC amplifiers, horizontal sweep generators, secondary power supplies. 19 — КТЮ-3-3 Bipolar DIP — — — — — NPN — — 60Вт 20pcs 60В 10А 20МГц 50 — — —
24619 СНГ 4 шт
4 грн.
50+3,60 грн.
100+3,20 грн.
250+3 грн.
Zener diodes D814A silicon, alloy, medium power. Designed to stabilize the voltage of 7.0-8.5 V in the stabilization current range of 3...40 mA. Are issued in the glass-to-metal case with flexible conclusions. 0.8 — — — DIP — — — — — — — — 340мВт 200pcs — — — — 8V0 — —
24641 СНГ 4 шт
16 грн.
10+15,20 грн.
50+14,40 грн.
100+12,80 грн.
R_S type trigger 1.5 — — — DIP — — — Logics — — — — — 40pcs — — — — — — —
25870 СНГ 4 шт
5 грн.
50+4,50 грн.
200+4 грн.
500+3,50 грн.
Diodes MD217 silicon, diffusion. Are issued in the glass-to-metal case with flexible conclusions. The main technical characteristics of the diode MD217: • Uopp max - Maximum direct reverse voltage: 800 V; • Inp max - Maximum forward current: 100 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 100 mA; • Iobr - Constant reverse current: no more than 50 μA at Uobr 800 V. 1 — — — DIP КД-9 800V 100mA — Rectifier — — — — 100 pieces. — — — — — — single
25874 СНГ 4 шт
30 грн.
Block of silicon, diffusion diodes. The main technical characteristics of the diode KTS402A: • Uobr and max - Maximum impulse reverse voltage: 600 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 µA at Uobr 600 V. 5.7 — — — DIP — 600V 1A — Diode bridge — — — — 100 pieces. — — — — — — —
25906 СНГ 4 шт
38 грн.
10+36,10 грн.
50+34,20 грн.
100+30,40 грн.
Transistors P701A silicon alloy-diffusion structures npn amplifying low-frequency. Designed for use in amplifiers and generators of radio electronic devices. 10 — — Bipolar DIP — — — — — NPN — — 10Вт 20pcs 60В 500мА 20МГц 60 — — —
26027 PHILIPS 4 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
1 DIP14 — — DIP — — — Logics — — — — — 25pcs — — — — — — —
26510 СНГ 4 шт
12 грн.
The main technical parameters of the thyristor KU228A: • Repetitive impulse voltage in the closed state: 100 V; • Maximum repetitive pulse current in the open state: 30 A; • Average pulse current in the open state: 10 A; • Repetitive pulse current in the closed state: no more than 2 mA; • Voltage slew rate in closed state: 20 V/µs; • Turn-on time: no more than 2 microseconds; • Turn-off time: no more than 40 microseconds. 2.5 — — — DIP TO-220 100V 10A — — — — — — 100 pieces. — — — — — — —
28487 СНГ 4 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
Multiplexer 8 in 1 with strobe. 1 DIP16 — — DIP — — — Logics — — — — — 90pcs — — — — — — —
28869 СНГ 4 шт
3 грн.
50+2,70 грн.
100+2,40 грн.
250+2,25 грн.
Zener diodes D809 are silicon, alloy, medium power. Designed to stabilize voltage 8.0-9.5 V in the range of stabilization currents 3...29 mA. 0.8 — — — DIP — — — — — — — — 300мВт 100 pieces. — — — — 9V kd-8 —
29488 СНГ 4 шт
10 грн.
50+9 грн.
200+8 грн.
500+7 грн.
Main technical characteristics of the KD204V diode: • Uop and max - Maximum pulse reverse voltage: 50 V; • Inp max - Maximum forward current: 1000 mA; • fd - Diode operating frequency: 1 kHz; • Unp - Continuous forward voltage: no more than 1.4 V at Inp 600 mA; • Iop - Continuous reverse current: no more than 50 µA at Uop 50 V; • treverse - Reverse recovery time: 1.5 µs. 5 — — — Screw КД-11 50V 1A — Rectifier — — — — 50pcs — — — — — — single
21969 СНГ 3 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Synchronous four-digit reversible counter. 1 DIP16 — — DIP — — — Logics — — — — — 90pcs — — — — — — —
24932 СНГ 3 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
3 three-input elements OR-NOT. 1 DIP14 — — DIP — — — Logics — — — — — 100 pieces. — — — — — — —
21344 СНГ 3 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
K155TM5 microcircuits are 4 D-flip-flops. 1 DIP14 — — DIP — — — Logics — — — — — 100 pieces. — — — — — — —
22882 DIODES INCORPORATED 3 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
500+8,40 грн.
0.2 — SOT23 Bipolar SMD — — — — — NPN — — 1.3Вт 3000pcs 65В 7А — 500 — — —
22884 ATMEL 3 шт
396 грн.
10+376,20 грн.
50+356,40 грн.
100+316,80 грн.
1.3 TQFP64 — — SMD — — — Microcontrollers — — — — — 66pcs — — — — — — —
22923 PANASONIC SEMICONDUCTOR 3 шт
36 грн.
10+34,20 грн.
50+32,40 грн.
100+28,80 грн.
2.8 TO-220-7 — — DIP — — — TV — — — — — 50pcs — — — — — — —
22935 BROADCOM 3 шт
432 грн.
10+410,40 грн.
50+388,80 грн.
100+345,60 грн.
— 5 BGA — — SMD — — — ethernet — — — — — 40pcs — — — — — — —