Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Appointment | Diode type | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Diode design |
|---|
Optocoupler AOT101AC
#5660
|
22348 | СНГ | 3 шт |
20 грн.
|
|
They are used for electronic switching of unipolar current with galvanic binding between input and output. | 0.5 | DIP8 | — | — | DIP | — | — | — | — | — | — | — | — | — | — | 200pcs | — | — | — | — | — | — | — | ||||||||
Transistor IPP05CN10N
#6759
|
20349 | INFINEON TECHNOLOGIES | 3 шт |
120 грн.
|
|
download datasheet IPP05CN10N pdf,800 KB | 2.8 | — | TO220 | Field | DIP | — | — | — | — | — | — | MOS n-channel | 100В | 100А | 300Вт | 50pcs | — | — | — | — | — | — | — | ||||||||
Transistor GT308V
#6850
|
25668 | СНГ | 3 шт |
12 грн.
|
|
Transistors GT308V germanium diffusion-alloy structures pnp universal. Designed for use in oscillators, power amplifiers, pulse devices. The main technical characteristics of the GT308V transistor: • Structure: pnp • Рк max - Constant power dissipation of the collector: 150 mW; • Fgr - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 120 MHz; • Ukbo - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 20 V; • Uebo - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 3 V; • Ik max - Maximum allowable DC collector current: 50 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 5 μA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 80...150 (1V; 10mA); • Sk - Collector junction capacity: no more than 8 (5V); • Rke us - Saturation resistance between collector and emitter: no more than 24 Ohm; • Ksh - Transistor noise factor: no more than 8 dB (1.6 MHz); • tk - Time constant of the feedback circuit at high frequency: no more than 400 ps. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | PNP | — | — | 150мВт | 100 pieces. | 15В | 50мА | 120МГц | 150 | — | — | — | ||||||||
Chip KM155IM2
#7383
|
22117 | СНГ | 3 шт |
6 грн.
|
|
Two-digit (binary) full adder. | 1.5 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Chip K145IK501P
#7406
|
BOX-0 | — | 3 шт |
20 грн.
|
|
— | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Chip K561LE10A
#8387
|
21919 | СНГ | 3 шт |
9 грн.
|
|
Three three-input elements OR-NOT. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Chip KR1401UD4
#8408
|
22137 | СНГ | 3 шт |
25 грн.
|
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A quad operational amplifier with field-effect transistors at the input, of medium accuracy and is designed to build DC and AC amplifiers, converters, function generators, active filters, sampling circuits, matching amplifiers with high-frequency sensors. | 1 | DIP14 | — | — | DIP | — | — | — | — | Amplifiers | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Chip KR559IP7 (=8T24, N8T24)
#10125
|
21895 | СНГ | 3 шт |
7 грн.
|
|
trunk receiver | 1 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Chip KR1816BE35
#10176
|
22067 | СНГ | 3 шт |
28 грн.
|
|
Single-chip 8-bit micro-computer without ROM and is designed for processing digital information processing in computer technology. | 7 | DIP40 | — | — | DIP | — | — | — | — | Microcontrollers | — | — | — | — | — | 10 pieces. | — | — | — | — | — | — | — | ||||||||
Chip K217LB2B
#10392
|
22401 | СНГ | 3 шт |
10 грн.
|
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2 logical elements 3I-NOT. | 1.5 | — | — | — | DIP | — | — | — | — | Logics | — | — | — | — | — | 40pcs | — | — | — | — | — | — | — | ||||||||
Chip PCF80C552-5-16H
#10436
|
22448 | PHILIPS | 3 шт |
504 грн.
|
|
1.5 | QFP80 | — | — | SMD | — | — | — | — | Microcontrollers | — | — | — | — | — | 80pcs | — | — | — | — | — | — | — | |||||||||
| 22839 | СНГ | 3 шт |
95 грн.
|
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Eight-bit microprocessor control. | 5.7 | DIP40 | — | — | DIP | — | — | — | — | TV | — | — | — | — | — | 20pcs | — | — | — | — | — | — | — | |||||||||
Zener diode 1N5372B(62V)
#11078
|
23094 | SEMIKRON | 3 шт |
7.30 грн.
|
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1 | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 5Вт | 500pcs | — | — | — | — | 62V | do201 | — | |||||||||
Chip SN74LS30N
#11380
|
23491 | TEXAS INSTRUMENTS | 3 шт |
19 грн.
|
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1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | — | 25pcs | — | — | — | — | — | — | — | |||||||||
Thyristor high-speed TB250-9
#11683
|
23912 | СНГ | 3 шт |
260 грн.
|
TB250-9 Thyristor high-speed tablet execution. Designed for operation in static power converters, in power plants of direct and alternating current, which require a short turn-off and turn-on time, as well as high critical rates of voltage rise in the closed state and current in the open state. Produced in a ceramic-metal case for double-sided cooling. The maximum allowable operating current - 250 A Repetitive impulse voltage in the closed state and repetitive impulse reverse voltage - 900 V Cooling air natural or forced. The type designation is given on the body or on a special tag. Dimensions: - diameter - 58 mm - height - 24 mm. | 150 | — | — | — | DIP | — | — | — | — | — | — | — | — | — | — | 1 PC. | — | — | — | — | — | — | — | |||||||||
| 24039 | СНГ | 3 шт |
80 грн.
|
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Appointment - differential system for the equipment of digital system IKM-30-4. | 16 | DIP28 | — | — | DIP | — | — | — | — | Telephony | — | — | — | — | — | 6pcs | — | — | — | — | — | — | — | |||||||||
Diode D101A Au
#11889
|
24142 | СНГ | 3 шт |
10 грн.
|
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Diodes silicon D101A, point, universal. Designed to work in TV video channels, in AGC systems and discriminators of FM and AM receivers. | 0.4 | — | — | — | DIP | D104 | 75V | 30mA | — | — | High frequency | — | — | — | — | 100 pieces. | — | — | — | — | — | — | single | ||||||||
Chip TB1251CN
#12651
|
25006 | TOSHIBA | 3 шт |
186 грн.
|
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5.7 | SDIP-56 | — | — | DIP | — | — | — | — | TV | — | — | — | — | — | 10 pieces. | — | — | — | — | — | — | — | |||||||||
Chip KR186IR4
#13595
|
25747 | СНГ | 3 шт |
10 грн.
|
|
64-bit quasi-static serial shift register. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Thyristor KU201B
#13689
|
25848 | СНГ | 3 шт |
10 грн.
|
• Maximum DC reverse voltage: 25 V; • Maximum DC voltage in closed state: 25 V; • Maximum repetitive pulse current in the open state: 30 A; • Repetitive pulse current in the open state: 2 A; • Open state voltage: 2 V; • Direct current in the closed state: no more than 5 mA; • Constant reverse current: no more than 5 mA; • Unlocking direct control current: no more than 100 mA; • Constant unlocking control voltage: no more than 6 V; • Voltage slew rate in closed state: 5 V/µs; • Turn-on time: no more than 10 microseconds; • Turn-off time: no more than 100 microseconds; • Working range of ambient temperature: -60... +125 °С. | 11 | — | — | — | Screw | — | 25V | — | 30A | — | — | — | — | — | — | 40pcs | — | — | — | — | — | — | — | |||||||||
Thyristor KU101B
#13696
|
25856 | СНГ | 3 шт |
9 грн.
|
Silicon thyristors KU101B, diffusion-alloy, p-type, triode, non-lockable. Designed for use as switching elements. The main technical parameters of the thyristor KU101B: • Maximum DC reverse voltage: 50 V; • Maximum DC voltage in closed state: 50 V; • Maximum repetitive pulse current in the open state: 1 A; • Average pulse current in the open state: 0.075 A; • Voltage in the open state: no more than 2.5 V; • Direct current in the closed state: not less than 0.15 mA; • Constant reverse current: no more than 0.15 mA; • Unlocking direct control current: no more than 12 mA; • Constant unlocking control voltage: 1.5...8 V; • Voltage slew rate in closed state: 100 V/µs; • Turn-on time: 2 ms; • Turn-off time: 35 µs. | 1.8 | — | — | — | DIP | — | 50V | — | 1A | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||||
Triac BTA06-600B
#14052
|
26231 | ST MICROELECTRONICS | 3 шт |
12 грн.
|
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2.8 | — | — | — | DIP | TO-220 | 600V | 6A | — | — | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | |||||||||
Diode bridge KTS405G
#14127
|
26308 | СНГ | 3 шт |
7 грн.
|
The main technical characteristics of the KTs405G diode: • Uopp max - Maximum direct reverse voltage: 300 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 μA at Uobr 300 V. | 5.2 | — | — | — | DIP | — | 300V | 1A | — | — | Diode bridge | — | — | — | — | 500pcs | — | — | — | — | — | — | — | |||||||||
Chip KR590KT1 (=AD7519)
#14135
|
26319 | СНГ | 3 шт |
12 грн.
|
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Four-channel MOS switch with control circuit for switching currents up to 5mA. | 1.2 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | — | 90pcs | — | — | — | — | — | — | — | ||||||||
Optocoupler AOT101GS
#14623
|
26839 | СНГ | 3 шт |
20 грн.
|
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They are used for electronic switching of unipolar current with galvanic binding between input and output. | 0.5 | DIP8 | — | — | DIP | — | — | — | — | — | — | — | — | — | — | 200pcs | — | — | — | — | — | — | — | ||||||||
Chip K548UN1V
#16038
|
28275 | СНГ | 3 шт |
10 грн.
|
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Two-channel low-noise amplifier for pre-amplification of signals up to 1 MHz for use in high-quality stereo household and studio sound recording and playback equipment, as well as for use in measuring equipment (spectrum analyzers, harmonic distortion meters, broadband amplifiers). The amplifier has a built-in voltage regulator, internal frequency correction, short circuit protection. | 1 | DIP14 | — | — | DIP | — | — | — | — | Amplifiers | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Avalanche diode DL112-25-10
#16201
|
28447 | СНГ | 3 шт |
80 грн.
|
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6 | — | — | — | Cooler | — | 1000V | 25A | — | — | Avalanche | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Zener diode 2S447A
#16530
|
28778 | СНГ | 3 шт |
12 грн.
|
|
Main technical parameters of the zener diode 2S447A: • Rated stabilization voltage: 4.7 V at Ist 43 mA; • Stabilization voltage spread: 4.23... 5.17 V; • Temperature coefficient of stabilization voltage: -0.08%/°C; • Temporary instability of the zener diode stabilization voltage: ±1.5%; • Differential resistance of the zener diode: 18 Ohms at Ist 30 mA; • Minimum permissible stabilization current: 3 mA; • Maximum permissible stabilization current: 190 mA; • Maximum permissible power dissipation on the zener diode: 1 W; • Operating range of ambient temperature: -60... +100 °C. | 0.8 | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 1Вт | 100 pieces. | — | — | — | — | 4V7 | kd-8 | — | ||||||||
Zener diode 2S433A
#16532
|
28780 | СНГ | 3 шт |
14 грн.
|
|
Main technical parameters of the 2S433A zener diode: • Rated stabilization voltage: 3.3 V at Ist 60 mA; • Stabilization voltage spread: 2.97... 3.63 V; • Temperature coefficient of stabilization voltage: -0.1...0%/°C; • Temporary instability of the zener diode stabilization voltage: ±1.5%; • Differential resistance of the zener diode: 14 Ohms at Ist 30 mA; • Minimum permissible stabilization current: 3 mA; • Maximum permissible stabilization current: 229 mA; • Maximum permissible power dissipation on the zener diode: 1 W; • Operating ambient temperature range: -60... +100 °C | 0.8 | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 1Вт | 100 pieces. | — | — | — | — | 3V3 | kd-8 | — | ||||||||
Transistor KT840B
#16613
|
28851 | СНГ | 3 шт |
30 грн.
|
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Main technical characteristics of the KT840B transistor: • Transistor structure: npn; • Ркт max - Constant power dissipation of the collector with heat sink: 60 W; • fgr - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: not less than 8 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 750 V; • Uebo max - Maximum emitter-base voltage at a given reverse emitter current and open collector circuit: 5 V; • Iк max - Maximum permissible direct collector current: 6 A; • Ikbo - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 3 mA (750V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 10; • Rke us - Saturation resistance between collector and emitter: no more than 0.75 Ohm. | 17.5 | — | TO3 | Bipolar | DIP | — | — | — | — | — | — | NPN | — | — | 60Вт | 40pcs | 350В | 6А | 8МГц | 10 | — | — | — |
