transistors

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Transistor case type Transistor type Mounting type Structure Drain-source voltage Drain current Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain
Transistor KP707V2 (=BUZ90)
Transistor KP707V2 (=BUZ90)
#10738
 22803 СНГ 2 шт
52 грн.
10+49,40 грн.
50+46,80 грн.
100+41,60 грн.
2.5 TO220 Field DIP MOS n-channel 800В 7А 50Вт 100 pieces. — — — —
Transistor MP21D
Transistor MP21D
#10821
 23017 СНГ 2 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistor MP21D germanium alloyed pnp switching low-frequency low-power. Designed for use in switching circuits. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 60В 100мА 0,7МГц 200
Transistor KT209K
Transistor KT209K
#11443
 23571 СНГ 2 шт
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
0.3 TO92 Bipolar DIP PNP — — 350мВт 1000pcs 45В 350мА — 160
Transistor 1T321V (=GT321V)
Transistor 1T321V (=GT321V)
#13543
 25674 СНГ 2 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistors 1T321V germanium conversion structures pnp switching. Designed for use in switching devices. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 50В 200мА 60МГц 200
Transistor GT321V
Transistor GT321V
#13711
 25875 СНГ 2 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistors GT321V germanium conversion structures pnp switching. Designed for use in switching devices. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 50В 200мА 60МГц 200
Transistor KT352A
Transistor KT352A
#13753
 25921 INTEGRAL 2 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
The main technical characteristics of the transistor KT352A: • Transistor structure: pnp; • Рк max - Constant power dissipation of the collector: 300 mW; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 200 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 20 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V; • Ik and max - The maximum allowable collector pulse current: 200 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1 μA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 25... 120; • Sk - Collector junction capacitance: no more than 15 pF; • Rke us - Saturation resistance between collector and emitter: no more than 3 ohms. 0.3 TO92 Bipolar DIP PNP — — 300мВт 500pcs 15В 200мА 200МГц 120
Transistor KT321G
Transistor KT321G
#16477
 28726 СНГ 2 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
KT321G silicon transistors, epitaxial-planar pnp pulse structures. Designed for use in pulse amplifiers and switching devices. 1.5 КТЮ-3-6 Bipolar DIP PNP — — 210мВт 100 pieces. 40В 200мА 60МГц 60
Transistor KT321D
Transistor KT321D
#16478
 28727 СНГ 2 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
KT321D silicon transistors, epitaxial-planar pnp pulse structures. Designed for use in pulse amplifiers and switching devices. 1.5 КТЮ-3-6 Bipolar DIP PNP — — 210мВт 100 pieces. 40В 200мА 60МГц 120
Transistor KT321E
Transistor KT321E
#16479
 28728 СНГ 2 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
KT321E silicon transistors, epitaxial-planar pnp pulse structures. Designed for use in pulse amplifiers and switching devices. 1.5 КТЮ-3-6 Bipolar DIP PNP — — 210мВт 100 pieces. 40В 200мА 60МГц 200
Transistor KT825G
Transistor KT825G
#17110
 29359 СНГ 2 шт
240 грн.
10+228 грн.
50+216 грн.
100+192 грн.
Main technical characteristics of the KT825G transistor: • Transistor structure: p-n-p; • Рк т max - Continuous dissipated power of the collector with a heat sink: 125 W; • fгр - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: at least 4 MHz; • Uэбо max - Maximum emitter-base voltage at a given reverse emitter current and an open collector circuit: 5 V; • Iк max - Maximum permissible direct collector current: 20 A; • Iк и max - Maximum permissible pulse collector current: 40 A; • h21э - Static current transfer coefficient of the transistor for circuits with a common emitter: 750...18000; • Ск - Collector junction capacitance: no more than 600 pF; • Rke nat - Saturation resistance between collector and emitter: no more than 0.4 Ohm. 16 TO3 Bipolar DIP PNP — — 125Вт 10 pieces. 90В 40А — 18000
Transistor ZXTN25012EFH (1C3)
Transistor ZXTN25012EFH (1C3)
#2337
 22881 DIODES INCORPORATED 1 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
500+4,20 грн.
0.2 SOT23 Bipolar SMD NPN — — 1Вт 3000pcs 12В 6А — 800
Transistor 2SC6144
Transistor 2SC6144
#8461
 20489 ON SEMICONDUCTOR 1 шт
40 грн.
10+38 грн.
50+36 грн.
100+32 грн.
500+28 грн.
2.8 TO220F Bipolar DIP NPN — — 25Вт 50pcs 50В 10А — 560
Transistor 2SA733 (A733)
Transistor 2SA733 (A733)
#8841
 20496 FAIRCHILD SEMICONDUCTOR 1 шт
1.50 грн.
10+1,42 грн.
50+1,35 грн.
100+1,20 грн.
500+1,05 грн.
0.3 TO92 Bipolar DIP PNP — — 625мВт 500pcs 50В 500мА — 400
Transistor MP20B
Transistor MP20B
#10817
 23012 СНГ 1 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistor MP20B germanium alloyed pnp switching low-frequency low-power. Designed for use in switching circuits. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 30В 50мА 2МГц 200
Transistor AO8205S
Transistor AO8205S
#11214
 23345 AMS 1 шт
4.50 грн.
10+4,27 грн.
50+4,05 грн.
100+3,60 грн.
0.1 SOT23-6 Field SMD MOS n-channel x2 20В 4.5А 1Вт 3000pcs — — — —
Transistor GT321B
Transistor GT321B
#13542
 25673 СНГ 1 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistors GT321B germanium conversion structures pnp switching. Designed for use in switching devices. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 50В 200мА 60МГц 120
Transistor KT837B
Transistor KT837B
#14410
 26618 INTEGRAL 1 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP PNP — — 30Вт 100 pieces. 70В 7,5A 1МГц 80
Transistor P304M
Transistor P304M
#14411
 26619 СНГ 1 шт
13 грн.
10+12,35 грн.
50+11,70 грн.
100+10,40 грн.
Transistors P304M silicon alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. 2.5 TO220 Bipolar DIP PNP — — 10Вт 20pcs 50В 500мА 0,05МГц —
Transistor KT837V
Transistor KT837V
#15470
 27709 INTEGRAL 1 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP PNP — — 30Вт 100 pieces. 70В 7,5A 1МГц 150
Transistor 1T403Zh (=GT403Zh)
Transistor 1T403Zh (=GT403Zh)
#16921
 29168 СНГ 1 шт
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
Transistor 1T403Zh germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, converters and DC stabilizers. 3 — Bipolar DIP PNP — — 4Вт 100 pieces. 60В 1,25А — 60
Transistor P217B
Transistor P217B
#16931
 29178 СНГ 1 шт
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
Main technical characteristics of the P217B transistor: • Transistor structure: pnp • Рк t max - Continuous dissipated power of the collector with heat sink: 30 W; • fh21э - Limit frequency of the transistor current transfer coefficient for circuits with a common emitter: not less than 0.2 MHz; • Uкбо проб - Collector-base breakdown voltage at a given collector reverse current and open emitter circuit: 60 V; • Uebo prob - Breakdown voltage emitter-base at a given reverse emitter current and open collector circuit: 15 V; • Iк max - Maximum permissible direct collector current: 7.5 A; • Iкбо - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 0.5 mA; • h21э - Static current transfer coefficient of the transistor in small signal mode for circuits with a common emitter: more than 20; • Rke nat - Saturation resistance between collector and emitter: no more than 0.5 Ohm. 11 — Bipolar DIP PNP — — 30Вт 40pcs 60В 7,5A 0,1МГц —
Transistor KT3102EM
Transistor KT3102EM
#679
 — СНГ —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
 — 0.3 TO92 Bipolar DIP NPN — — 250мВт 1000pcs 20В 200мА — 1000
2N2222
2N2222
#2151
 20499 FAIRCHILD SEMICONDUCTOR —
1 грн.
10+0,95 грн.
50+0,90 грн.
100+0,80 грн.
500+0,70 грн.
 — 0.25 TO92 Bipolar DIP NPN — — 625мВт 1000pcs 40В 600мА 300МГц 300
Transistor 2N3055
Transistor 2N3055
#2152
 23632 ST MICROELECTRONICS —
22 грн.
10+20,90 грн.
50+19,80 грн.
100+17,60 грн.
500+15,40 грн.
 — 10 TO3 Bipolar DIP NPN — — 115Вт 25pcs 70В 15А — 70
2N3772
2N3772
#2153
 — ON SEMICONDUCTOR —
66 грн.
10+62,70 грн.
50+59,40 грн.
100+52,80 грн.
500+46,20 грн.
 — download datasheet 2N3772 pdf,43 KB 10 TO3 Bipolar DIP NPN — — 150Вт 20pcs 80В 20А — 60
Transistor 2N3904
Transistor 2N3904
#2154
 20407 DIOTEC SEMICONDUCTOR —
0.70 грн.
10+0,66 грн.
50+0,63 грн.
100+0,56 грн.
500+0,49 грн.
 — 0.3 TO92 Bipolar DIP NPN — — 625мВт 1000pcs 40В 200мА — 300
Transistor 2N4401
Transistor 2N4401
#2155
 22512 FAIRCHILD SEMICONDUCTOR —
1 грн.
10+0,95 грн.
50+0,90 грн.
100+0,80 грн.
500+0,70 грн.
 — 0.25 TO92 Bipolar DIP NPN — — 625мВт 1000pcs 40В 600мА — 500
2N5088
2N5088
#2156
 — ON SEMICONDUCTOR —
1.40 грн.
10+1,33 грн.
50+1,26 грн.
100+1,12 грн.
500+0,98 грн.
 — 0.3 TO92 Bipolar DIP NPN — — 625мВт 1000pcs 30В 50мА 50МГц 900
Transistor 2N5551
Transistor 2N5551
#2157
 20497 FAIRCHILD SEMICONDUCTOR —
1 грн.
10+0,95 грн.
50+0,90 грн.
100+0,80 грн.
500+0,70 грн.
 — 0.25 TO92 Bipolar DIP NPN — — 625мВт 1000pcs 160В 600мА — 250
Transistor 2N6517
Transistor 2N6517
#2159
 22513 MOTOROLA —
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
500+1,40 грн.
 — 0.3 TO92 Bipolar DIP NPN — — 625мВт 1000pcs 350В 500мА 200МГц 300