Diodes domestic
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Brand «СНГ»
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Pin type | Type of shell | Rated capacity, μF | Working voltage, V | Rated capacity tolerance,% | Working temperature, С | Case diameter D, mm | Body length L, mm | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Frequency | Current gain | Capacity | Resistance | Resistor power | Accuracy | Resistor housing type | Stabilization voltage | Zener diode housing type | Curve | Color | LED type | Diode design |
|---|
| 24668 | СНГ | 16845 шт |
2.50 грн.
|
|
Resistor MLT-2 24 kOhm (+/-5%). | 2.5 | Flexible Leads | — | — | — | — | — | 8 | 17 | — | — | DIP | — | — | — | — | — | — | — | — | 200pcs | — | — | — | — | — | — | 24 кОм | 2 W | 5 % | metal film | — | — | — | — | — | — | |||||||||
| 24667 | СНГ | 42358 шт |
2.50 грн.
|
|
Resistor MLT-2 12 kOhm. | 2.5 | Flexible Leads | — | — | — | — | — | 8 | 17 | — | — | DIP | — | — | — | — | — | — | — | — | 200pcs | — | — | — | — | — | — | 12 кОм | 2 W | 5 % | metal film | — | — | — | — | — | — | |||||||||
Triac KU208B
#12277
|
24659 | СНГ | 7 шт |
19 грн.
|
|
Silicon triac, planar, pnpn structures, triode, non-lockable, symmetrical. | 11 | — | — | — | — | — | — | — | — | — | — | Screw | — | 200V | 5A | — | — | — | — | — | 40pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Chip 217TP1A
#12259
|
24641 | СНГ | 4 шт |
16 грн.
|
|
R_S type trigger | 1.5 | — | — | — | — | — | — | — | — | — | — | DIP | — | — | — | — | Logics | — | — | — | 40pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Microcircuit 217LB4A
#12258
|
24640 | СНГ | 6 шт |
12 грн.
|
|
3 logic elements AND-NOT/OR-NOT. | 1.5 | — | — | — | — | — | — | — | — | — | — | DIP | — | — | — | — | Logics | — | — | — | 40pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Microcircuit 217LB1A
#12257
|
24639 | СНГ | 13 шт |
14 грн.
|
|
Logic element 8I-NOT. | 1.5 | — | — | — | — | — | — | — | — | — | — | DIP | — | — | — | — | Logics | — | — | — | 40pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Transistor MP42A
#12255
|
24637 | СНГ | 87 шт |
6 грн.
|
|
The main technical characteristics of the MP42A transistor: • Transistor structure: pnp • Рк max - Constant power dissipation of the collector: 200 mW; • fh21b - The limiting frequency of the transistor current transfer coefficient for circuits with a common emitter and a common base: at least 1 MHz; • Uкеr samples - Breakdown voltage collector-emitter at a given collector current and a given (final) resistance in the base-emitter circuit: 15 V; • Ik and max - The maximum allowable collector pulse current: 200 mA; • h21e - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 30...50; • Rke us - Saturation resistance between collector and emitter: no more than 20 ohms. | 1.6 | — | — | — | — | — | — | — | — | КТЮ-3-6 | Bipolar | DIP | — | — | — | — | — | — | PNP | 200мВт | 100 pieces. | 15В | 200мА | 1МГц | — | 50 | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Zener diode D818V
#12245
|
24627 | СНГ | 86 шт |
4 грн.
|
|
The main technical parameters of the Zener diode D818V: • Rated stabilization voltage: 9 V at Ist 10 mA; • Stabilization voltage spread: 7.6... 10 V; • Temperature coefficient of stabilization voltage: +0.010%/°С; • Temporary stabilization voltage instability: ± 0.12%; • Zener diode differential resistance: 18 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Working range of ambient temperature: -60... +125 °С. | 0.8 | — | — | — | — | — | — | — | — | — | — | DIP | — | — | — | — | — | — | — | 300мВт | 100 pieces. | — | — | — | — | — | — | — | — | — | — | 9V | kd-8 | — | — | — | — | ||||||||
Zener diode D814A
#12239
|
24619 | СНГ | 4 шт |
4 грн.
|
|
Zener diodes D814A silicon, alloy, medium power. Designed to stabilize the voltage of 7.0-8.5 V in the stabilization current range of 3...40 mA. Are issued in the glass-to-metal case with flexible conclusions. | 0.8 | — | — | — | — | — | — | — | — | — | — | DIP | — | — | — | — | — | — | — | 340мВт | 200pcs | — | — | — | — | — | — | — | — | — | — | 8V0 | — | — | — | — | — | ||||||||
Transistor KT817B
#12236
|
24615 | СНГ | 339 шт |
10 грн.
|
|
Transistor KT817B silicon mesa-epitaxial-planar structure npn amplifying. | 0.7 | — | — | — | — | — | — | — | — | TO126 | Bipolar | DIP | — | — | — | — | — | — | NPN | 25Вт | 200pcs | 45В | 3А | 3МГц | — | 40 | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Transistor 2T903B (=KT903B)
#12229
|
24608 | СНГ | 311 шт |
40 грн.
|
|
The main technical characteristics of the transistor 2T903B: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 30 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: more than 120 MHz; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 4 V; • Ik max - Maximum allowable DC collector current: 3 A; • Ik and max - The maximum allowable collector pulse current: 10 A; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 40... 180; • Sk - Collector junction capacitance: no more than 180 pF; • Rke us - Saturation resistance between collector and emitter: no more than 1 ohm; • Рout - Transistor output power: not less than 10 W at 50 MHz. | 22 | — | — | — | — | — | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | NPN | 30Вт | 20pcs | 60В | 10А | — | — | 180 | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Diode 2D213A (=KD213A)
#12227
|
24606 | СНГ | 903 шт |
25 грн.
|
|
The main technical characteristics of the diode 2D213A: • Uopp max - Maximum direct reverse voltage: 200 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 200 µA at Uobr 200 V; • tvoc arr - Reverse recovery time: 0.3 µs; • Sd - Total capacitance: 550 pF at Uobr 100 V. | 3.5 | — | — | — | — | — | — | — | — | — | — | DIP | КД-23 | 200V | 10A | — | — | Rectifier | — | — | 50pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | single | ||||||||
Diode 2D202Zh (=KD202Zh)
#12225
|
24604 | СНГ | 89 шт |
9 грн.
|
|
The main technical characteristics of the diode 2D202Zh: • Uobr and max - Maximum impulse reverse voltage: 300 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 µA at Uobr 300 V. | 5 | — | — | — | — | — | — | — | — | — | — | Screw | КДЮ-11 | 210V | 5A | — | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | single | ||||||||
Diode 2D202V (=KD202V)
#12224
|
24603 | СНГ | 4494 шт |
9 грн.
|
|
The main technical characteristics of the diode 2D202V: • Uobr and max - Maximum impulse reverse voltage: 100 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 μA at Uobr 100 V. | 5 | — | — | — | — | — | — | — | — | — | — | Screw | КДЮ-11 | 100V | 5A | — | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | single | ||||||||
Thyristor 2U101B (=KU101B)
#12221
|
24600 | СНГ | 1 шт |
10 грн.
|
The main technical parameters of the thyristor KU101B: • Maximum DC reverse voltage: 50 V; • Maximum DC voltage in closed state: 50 V; • Maximum repetitive pulse current in the open state: 1 A; • Average pulse current in the open state: 0.075 A; • Voltage in the open state: no more than 2.5 V; • Direct current in the closed state: not less than 0.15 mA; • Constant reverse current: no more than 0.15 mA; • Unlocking direct control current: no more than 12 mA; • Constant unlocking control voltage: 1.5...8 V; • Voltage slew rate in closed state: 100 V/µs; • Turn-on time: 2 ms; • Turn-off time: 35 µs. | 2 | — | — | — | — | — | — | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Chip K131LA4
#12220
|
24598 | СНГ | 128 шт |
6 грн.
|
|
3 logical elements 3I-NOT. | 1 | — | DIP14 | — | — | — | — | — | — | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Chip K131LA6
#12219
|
24596 | СНГ | 202 шт |
6 грн.
|
|
2 logic elements 4I-NOT with a large output branching factor. | 1 | — | DIP14 | — | — | — | — | — | — | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Thyristor KU202M
#12216
|
24593 | СНГ | 29 шт |
30 грн.
|
Silicon thyristors KU202M are planar-diffusion, pnpn structures, triode, non-lockable. Designed for use as switching elements of voltage switching devices by small control signals. Are issued in the glass-to-metal case with rigid conclusions. | 11 | — | — | — | — | — | — | — | — | — | — | Screw | — | 400V | 10A | — | — | — | — | — | 40pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
| 24478 | СНГ | 540 шт |
5 грн.
|
Filter FP1R8-63.02 6.5 MHz ceramic. | 0.25 | — | — | — | — | — | — | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | 6.5MHz | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
| 24477 | СНГ | 272 шт |
5 грн.
|
Filter FP1R8-63.01 5.5 MHz ceramic. | 0.25 | — | — | — | — | — | — | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | 5.5MHz | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
| 24476 | СНГ | 45 шт |
27.30 грн.
|
|
2 | Flexible Leads | — | 33 | 16 | 20 | -60...+125 | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Capacitor KD-2 1000 pF 250v
#12179
|
24472 | СНГ | 218 шт |
1 грн.
|
|
Capacitor ceramic disk. | 0.5 | Flexible Leads | — | — | 250 | — | — | 6 | — | — | — | DIP | — | — | — | — | — | — | — | — | 1000pcs | — | — | — | — | — | 1nF (1000pF) | — | — | +80-20% | — | — | — | — | — | — | — | ||||||||
Capacitor KD-2 470 pF 250v
#12178
|
24471 | СНГ | 768 шт |
1 грн.
|
|
Capacitor ceramic disk. | 0.4 | Flexible Leads | — | — | 250 | — | — | 6 | — | — | — | DIP | — | — | — | — | — | — | — | — | 1000pcs | — | — | — | — | — | 470pF | — | — | +80-20% | — | — | — | — | — | — | — | ||||||||
Thyristor KU112A
#12176
|
24469 | СНГ | 253 шт |
10 грн.
|
Silicon thyristors KU112A, triode, non-lockable. Designed for use as switching elements. | 0.7 | — | — | — | — | — | — | — | — | — | — | DIP | TO-126 | 30V | — | 6A | — | — | — | — | 200pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
AL107B infrared LED 2.4 mm
#12175
|
24468 | СНГ | 673 шт |
3 грн.
|
|
AL107B LED Infrared 2.4 mm. 940 - 965 nm (round, infrared transparent), 15°. | 0.2 | — | — | — | — | — | — | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 1000pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | IR | 2.4mm round | — | ||||||||
Phototransistor FT-8 gr.A
#12174
|
24467 | СНГ | 317 шт |
8 грн.
|
|
Designed for use as receivers and sensors of infrared radiation as part of optoelectronic equipment, systems of photoelectric automation and non-contact temperature measurement, computer and measuring equipment. The main technical parameters of the phototransistor FT-8: • Photosensitive element size: diameter 0.5 mm; • Wavelength of maximum spectral distribution of photosensitivity: 0.9...0.95 µm; • Rated operating voltage: 5 V; • Dark current: no more than 1 μA; • Current photosensitivity: not less than 0.2 µA/lx. | 0.3 | — | — | — | — | — | — | — | — | — | Photo | DIP | — | — | — | — | — | — | — | — | 400pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Indicator lamp IN-35
#12173
|
24466 | СНГ | 9566 шт |
5 грн.
|
|
Operating voltage 100V D=6-7mm L=18-20mm Glow color red-orange Flexible conclusions. | 0.6 | — | — | — | — | — | — | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
| 24463 | СНГ | 89 шт |
10 грн.
|
|
11 | — | — | — | — | — | — | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
| 24461 | СНГ | 94 шт |
5 грн.
|
|
Resistor assembly HP1-1-1-8 47 kOhm. | 1.5 | hard conclusions | — | — | — | — | — | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 60pcs | — | — | — | — | — | — | 47 кОм | 0.125 W | 5 % | — | — | — | — | — | — | — | |||||||||
| 24460 | СНГ | 208 шт |
2.50 грн.
|
|
SP3-38v 0.25 W tuning resistor. | 0.9 | hard conclusions | — | — | — | — | — | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | 1 кОм | 0.25 W | 20 % | — | — | — | A | — | — | — |
