Brand «СНГ»

Results: 4144

MPN Article Brand In stock Price Discounts Quantity Description Weight g. Pin type Case diameter D, mm Body length L, mm Transistor case type Transistor type Mounting type Type of shell Urev. max, V Ipr. max. Appointment Diode type Structure Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain Resistance Resistor power Accuracy Resistor housing type Stabilization voltage Zener diode housing type Plug or socket Number of contacts Mechanical installation Type Diode design
24717 СНГ 9400 шт
28 грн.
10+26,60 грн.
20+25,20 грн.
50+23,80 грн.
100+22,40 грн.
PCB connector. 10.5 DIP 20pcs Fork 12 For a fee ONP
24716 СНГ 7730 шт
25 грн.
10+23,75 грн.
20+22,50 грн.
50+21,25 грн.
100+20 грн.
PCB connector. 13 DIP 20pcs Fork 18 For a fee ONP
24715 СНГ 1 шт
66 грн.
10+62,70 грн.
20+59,40 грн.
50+56,10 грн.
100+52,80 грн.
The 2RMDT27B7Sh5V1V cylindrical low-frequency small-sized connector is designed to operate in DC and AC electrical circuits with a frequency of up to 3 MHz at a voltage of up to 700 V. 19 DIP 50pcs Fork 7 To the body 2RM
24714 СНГ 858 шт
1 грн.
100+0,90 грн.
200+0,80 грн.
500+0,70 грн.
Resistor MLT-0.5 82 kOhm (+/-5%). 0.5 Flexible Leads 4 10 DIP 500pcs 82 кОм 0.5 W 5 % metal film
24712 СНГ 4 шт
162 грн.
10+153,90 грн.
20+145,80 грн.
50+137,70 грн.
100+129,60 грн.
Miniature cylindrical threaded connectors SNTs14-50/18V-1-A-V are designed to operate in DC, AC (frequency up to 3 MHz) and pulse current electrical circuits. 25 DIP 10 pieces. Fork 50 To the body SNC
24709 СНГ 78 шт
2.50 грн.
20+2,25 грн.
50+2,12 грн.
100+2 грн.
Resistor S2-33-N-2 12 kOhm. 2.5 Flexible Leads DIP 200pcs 12 кОм 2 W 5 % metal film
24708 СНГ 218 шт
2.50 грн.
20+2,25 грн.
50+2,12 грн.
100+2 грн.
Resistor S2-33-N-2 24 kOhm. 2.5 Flexible Leads DIP 200pcs 24 кОм 2 W 5 % metal film
24701 СНГ 584 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
The main technical characteristics of the P214V transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 10 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 60 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 10 V; • Ik max - Maximum allowable DC collector current: 5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1.5 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: more than 20; • Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm. 10 Bipolar DIP PNP 10Вт 50pcs 55В
24700 СНГ 211 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
The main technical characteristics of the P214B transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 11.5 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 60 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.15 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 20...150; • Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm. 10 Bipolar DIP PNP 11,5Вт 20pcs 55В 0,15МГц 150
24698 СНГ 1 шт
70 грн.
10+66,50 грн.
20+63 грн.
50+59,50 грн.
100+56 грн.
MP1-76-1-V are intended for operation in electrical circuits of direct, alternating (frequency up to 3 MHz) and pulsed currents for indoor installation in all-climatic version in accordance with the technical specifications GE0.364.184TU (ASHDK.434410.061TU). 22 DIP 1 PC. Fork 76 per wire MR
24681 СНГ 31 шт
2.50 грн.
20+2,25 грн.
50+2,12 грн.
100+2 грн.
Resistor MLT-2 15 kOhm. 2.5 Flexible Leads 8 17 DIP 200pcs 15 кОм 2 W 10 % metal film
24680 СНГ 4030 шт
2.50 грн.
20+2,25 грн.
50+2,12 грн.
100+2 грн.
Resistor C2-23-2 24 kOhm (+/-5%). 2.5 Flexible Leads 8 17 DIP 200pcs 24 кОм 2 W 5 % metal film
24678 СНГ 800 шт
2.50 грн.
20+2,25 грн.
50+2,12 грн.
100+2 грн.
Resistor MLT-2 20 kOhm (+/-5%). 2.5 Flexible Leads 8 17 DIP 200pcs 20 кОм 2 W 5 % metal film
24677 СНГ 3050 шт
2.50 грн.
20+2,25 грн.
50+2,12 грн.
100+2 грн.
Resistor MLT-2 5.1 kOhm (+/-5%). 2.5 Flexible Leads 8 17 DIP 200pcs 5,1 кОм 2 W 5 % metal film
24676 СНГ 1 шт
2.50 грн.
20+2,25 грн.
50+2,12 грн.
100+2 грн.
Resistor MLT-2 120 kOhm 2.5 Flexible Leads 8 17 DIP 200pcs 120 кОм 2 W 5 % metal film
24673 СНГ 22 шт
50 грн.
Resistors PEV-50 constant wire, load for surface mounting. Are intended for work in chains of direct and alternating currents of the radio-electronic equipment. 110 hard conclusions DIP 1 PC. 680 Ом 50 W 5 %
24669 СНГ 47 шт
80 грн.
140 hard conclusions DIP 1 PC. 750 Ом 80 W 5 %
24668 СНГ 16845 шт
2.50 грн.
20+2,25 грн.
50+2,12 грн.
100+2 грн.
Resistor MLT-2 24 kOhm (+/-5%). 2.5 Flexible Leads 8 17 DIP 200pcs 24 кОм 2 W 5 % metal film
24667 СНГ 42358 шт
2.50 грн.
20+2,25 грн.
50+2,12 грн.
100+2 грн.
Resistor MLT-2 12 kOhm. 2.5 Flexible Leads 8 17 DIP 200pcs 12 кОм 2 W 5 % metal film
24659 СНГ 7 шт
19 грн.
10+17,10 грн.
50+15,20 грн.
Silicon triac, planar, pnpn structures, triode, non-lockable, symmetrical. 11 Screw 200V 5A 40pcs
24641 СНГ 4 шт
16 грн.
10+15,20 грн.
50+14,40 грн.
100+12,80 грн.
R_S type trigger 1.5 DIP Logics 40pcs
24640 СНГ 6 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
3 logic elements AND-NOT/OR-NOT. 1.5 DIP Logics 40pcs
24639 СНГ 13 шт
14 грн.
10+13,30 грн.
50+12,60 грн.
100+11,20 грн.
Logic element 8I-NOT. 1.5 DIP Logics 40pcs
24637 СНГ 97 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
The main technical characteristics of the MP42A transistor: • Transistor structure: pnp • Рк max - Constant power dissipation of the collector: 200 mW; • fh21b - The limiting frequency of the transistor current transfer coefficient for circuits with a common emitter and a common base: at least 1 MHz; • Uкеr samples - Breakdown voltage collector-emitter at a given collector current and a given (final) resistance in the base-emitter circuit: 15 V; • Ik and max - The maximum allowable collector pulse current: 200 mA; • h21e - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 30...50; • Rke us - Saturation resistance between collector and emitter: no more than 20 ohms. 1.6 КТЮ-3-6 Bipolar DIP PNP 200мВт 100 pieces. 15В 200мА 1МГц 50
24627 СНГ 126 шт
4 грн.
50+3,60 грн.
100+3,20 грн.
250+3 грн.
The main technical parameters of the Zener diode D818V: • Rated stabilization voltage: 9 V at Ist 10 mA; • Stabilization voltage spread: 7.6... 10 V; • Temperature coefficient of stabilization voltage: +0.010%/°С; • Temporary stabilization voltage instability: ± 0.12%; • Zener diode differential resistance: 18 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Working range of ambient temperature: -60... +125 °С. 0.8 DIP 300мВт 100 pieces. 9V kd-8
24619 СНГ 4 шт
4 грн.
50+3,60 грн.
100+3,20 грн.
250+3 грн.
Zener diodes D814A silicon, alloy, medium power. Designed to stabilize the voltage of 7.0-8.5 V in the stabilization current range of 3...40 mA. Are issued in the glass-to-metal case with flexible conclusions. 0.8 DIP 340мВт 200pcs 8V0
24615 СНГ 389 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistor KT817B silicon mesa-epitaxial-planar structure npn amplifying. 0.7 TO126 Bipolar DIP NPN 25Вт 200pcs 45В 3МГц 40
24608 СНГ 311 шт
40 грн.
10+38 грн.
50+36 грн.
100+32 грн.
The main technical characteristics of the transistor 2T903B: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 30 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: more than 120 MHz; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 4 V; • Ik max - Maximum allowable DC collector current: 3 A; • Ik and max - The maximum allowable collector pulse current: 10 A; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 40... 180; • Sk - Collector junction capacitance: no more than 180 pF; • Rke us - Saturation resistance between collector and emitter: no more than 1 ohm; • Рout - Transistor output power: not less than 10 W at 50 MHz. 22 КТЮ-3-3 Bipolar DIP NPN 30Вт 20pcs 60В 10А 180
24606 СНГ 913 шт
25 грн.
50+ 22,50 грн.
200+ 20 грн.
500+ 17,50 грн.
The main technical characteristics of the diode 2D213A: • Uopp max - Maximum direct reverse voltage: 200 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 200 µA at Uobr 200 V; • tvoc arr - Reverse recovery time: 0.3 µs; • Sd - Total capacitance: 550 pF at Uobr 100 V. 3.5 DIP КД-23 200V 10A Rectifier 50pcs single
24604 СНГ 89 шт
9 грн.
50+8,10 грн.
200+7,20 грн.
500+6,30 грн.
The main technical characteristics of the diode 2D202Zh: • Uobr and max - Maximum impulse reverse voltage: 300 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 µA at Uobr 300 V. 5 Screw КДЮ-11 210V 5A Rectifier 100 pieces. single