Diodes, bridges

Results: 448

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Mounting type Type of shell Urev. max, V Ipr. max. Ipr. imp. max. Diode type Factory packaging Breakdown voltage Diode design
21004 MCC —
16 грн.
100+14,40 грн.
200+12,80 грн.
500+11,20 грн.
— Diode 15A,100V Schottky x2 1.8 DIP TO-220 100V 10A — Schottky 50pcs — double common cathode
20989 INTERNATIONAL RECTIFIER —
19 грн.
100+17,10 грн.
200+15,20 грн.
500+13,30 грн.
— 8A 600V 2.5 DIP TO-220 600V 8A — Fast 50pcs — single
20984 GALAXY ELECTRICAL —
22 грн.
100+19,80 грн.
200+17,60 грн.
500+15,40 грн.
— Diode 25A,100V Schottky x2 1.8 DIP TO-220 80V 25A — Schottky 50pcs — double common cathode
20981 HKZ —
14 грн.
100+12,60 грн.
200+11,20 грн.
500+9,80 грн.
— 1.8 DIP TO-220 100V 2x15A — Schottky 50pcs — double common cathode
20965 NXP —
18 грн.
100+16,20 грн.
200+14,40 грн.
500+12,60 грн.
— 1.8 DIP TO-220F 600V 9A — Fast 50pcs — single
20975 SANKEN —
46 грн.
100+41,40 грн.
200+36,80 грн.
500+32,20 грн.
— 2.9 DIP TO-220F 200V 10A — Fast 50pcs — double common anode
20962 SANKEN —
39 грн.
100+35,10 грн.
200+31,20 грн.
500+27,30 грн.
— 2.8 DIP TO-220F 200V 10A — Fast 50pcs — double common cathode
20961 ST MICROELECTRONICS —
30 грн.
100+27 грн.
200+24 грн.
500+21 грн.
— 1.3 SMD D2PAK 300V 2x10A — Fast 500pcs — double common cathode
20990 ON SEMICONDUCTOR —
20 грн.
100+18 грн.
200+16 грн.
500+14 грн.
— 1.8 DIP TO-220 600V 15A — Fast 50pcs — single
21001 KEC —
20 грн.
100+18 грн.
200+16 грн.
500+14 грн.
— 2.5 DIP TO-220F 100V 2x15A — Schottky 50pcs — double common cathode
20995 VISHAY —
16 грн.
100+14,40 грн.
200+12,80 грн.
500+11,20 грн.
— 1.8 DIP TO-220 600V 15A — Fast 50pcs — single
20081 INFINEON TECHNOLOGIES —
7 грн.
100+6,30 грн.
200+5,60 грн.
500+4,90 грн.
— 0.2 SMD SOT-23 — 100mA — Pulse 3000pcs 50V 2 diodes in series
21155 ST MICROELECTRONICS —
60 грн.
100+54 грн.
200+48 грн.
500+42 грн.
— 7 DIP TO-247 300V 60A — Fast 25pcs — single
— — —
0 грн.
— — — — — — — — — — — —
70000 СНГ —
15 грн.
50+13,50 грн.
200+12 грн.
500+10,50 грн.
— Pillar of silicon, diffusion diodes, rectifier. Designed to convert alternating voltage with a frequency of up to 20 kHz. 1.5 DIP — 10kV 10mA — High voltage 100 pieces. — single
22792 СНГ —
15 грн.
50+13,50 грн.
200+12 грн.
500+10,50 грн.
— Pillars of silicon, diffusion diodes, rectifiers. Designed to convert alternating voltage with a frequency of up to 20 kHz. Are issued in the plastic case with flexible conclusions. 1.6 DIP — 4kV 10mA — High voltage 100 pieces. — single
26128 СНГ —
25 грн.
— Block of silicon, diffusion diodes. The main technical characteristics of the KTs402B diode: • Uobr and max - Maximum impulse reverse voltage: 500 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 μA at Uobr 500 V. 5.7 DIP — 500V 1A — Diode bridge 150pcs — —
70004 — —
15 грн.
— — — — — — — — — — — —
22959 СНГ —
20 грн.
— Diode assembly, consisting of two silicon, diffusion diodes, with separate outputs. Main technical characteristics of KD205A: • Uopp max - Maximum direct reverse voltage: 500 V; • Inp max - Maximum forward current: 500 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 500 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 500 V 4 DIP — 500V 500mA — Rectifier 100 pieces. — —
22962 СНГ —
2 грн.
50+1,80 грн.
200+1,60 грн.
500+1,40 грн.
— Diode germanium alloy. 2 DIP КД-8 100V 300mA — Rectifier 200pcs — single
22646 СНГ —
5 грн.
50+4,50 грн.
200+4 грн.
500+3,50 грн.
— • Uopp max - Maximum direct reverse voltage: 1000 V; • Inp max - Maximum forward current: 100 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 100 mA; • Iobr - Constant reverse current: no more than 50 μA at Uobr 1000 V 1 DIP КД-9 1000V 100mA — Rectifier 100 pieces. — single
22647 СНГ —
5 грн.
50+4,50 грн.
200+4 грн.
500+3,50 грн.
— • Uopp max - Maximum direct reverse voltage: 600 V; • Inp max - Maximum forward current: 100 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 100 mA; • Iobr - Constant reverse current: no more than 50 μA at Uobr 600 V 1 DIP КД-9 600V 100mA — Rectifier 100 pieces. — single
22963 СНГ —
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
— Silicon diode, diffusion. 1 DIP КД-8 200V 300mA — Rectifier 200pcs — single
22964 СНГ —
4 грн.
50+3,60 грн.
200+3,20 грн.
500+2,80 грн.
— Silicon diode, diffusion. The main technical characteristics of the diode D237B: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 300 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 300 mA; • Iobr - Constant reverse current: no more than 50 μA at Uobr 400 V. 2 DIP КД-8 400V 300mA — Rectifier 100 pieces. — single
22965 СНГ —
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
— Silicon diode, diffusion. 2 DIP КД-8 600V 300mA — Rectifier 200pcs — single
28418 СНГ —
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
— Diode D18 germanium, point, pulse. 0.4 DIP D104 20V 16mA — Pulse 200pcs — single
28419 СНГ —
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
— Diode D20 germanium, point, pulse. 0.3 DIP D104 10V 20mA — Pulse 200pcs — single
22789 СНГ —
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
— Microalloy, universal. Designed for use in AGC systems, discriminators, video amplifiers. 0.3 DIP D104 75V 30mA — Rectifier 100 pieces. — single
27716 СНГ —
2 грн.
50+1,80 грн.
200+1,60 грн.
500+1,40 грн.
— Silicon diode, alloyed, pulsed. 0.3 DIP D104 70V 50mA 500mA Pulse 200pcs — single
22791 СНГ —
2 грн.
50+1,80 грн.
200+1,60 грн.
500+1,40 грн.
— Diode germanium, diffusion, pulse. 0.3 DIP D104 20V 500mA 800mA Pulse 100 pieces. — single