Diodes, bridges

Results: 448

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Mounting type Type of shell Urev. max, V Ipr. max. Diode type Factory packaging Diode design
22788 СНГ —
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
— Germanium, mesadiffusion, pulsed. 0.3 DIP D104 30V 80mA Pulse 100 pieces. single
70035 СНГ —
12 грн.
50+10,80 грн.
200+9,60 грн.
500+8,40 грн.
— Diode D405A silicon point mixing. Designed for use in frequency converters at a wavelength of 3 cm. 2.5 DIP — — — Microwave 20pcs single
24230 СНГ —
22 грн.
50+19,80 грн.
200+17,60 грн.
500+15,40 грн.
— Diode D405B silicon point mixing. Designed for use in frequency converters at a wavelength of 3 cm. 2.5 DIP — — — Microwave — single
22968 СНГ —
25 грн.
50+22,50 грн.
200+20 грн.
500+17,50 грн.
— The main technical parameters of the microwave diode D405AP: • Conversion loss: no more than 8.5 dB; • Rectified current: not less than 1 mA; • Rated noise figure: 8.5 dB; • Output noise ratio: no more than 2; • Voltage standing wave ratio: no more than 1.7; • Output impedance: 300...500 Ohm; • Continuous dissipated microwave power: 20 mW; • Pulse power dissipation: 300 mW; • Ambient temperature: -60...+100 °С 3 DIP — — — Microwave 50pcs single
70038 СНГ —
12 грн.
50+10,80 грн.
200+9,60 грн.
500+8,40 грн.
— Diode D405A silicon point mixing. Designed for use in frequency converters at a wavelength of 3 cm. 2.5 DIP — — — Microwave 20pcs single
20570 — —
7 грн.
10+6,30 грн.
50+5,60 грн.
100+5,25 грн.
— 1000V;4.0A — — — — — — — —
20401 ST MICROELECTRONICS —
14 грн.
100+12,60 грн.
200+11,20 грн.
500+9,80 грн.
— 2 DIP TO-220F 600V 15A Fast 50pcs single
20281 SEP —
28 грн.
10+25,20 грн.
50+22,40 грн.
100+21 грн.
— 1000V;25A 17.5 DIP — 1000V 25A Diode bridge 50pcs —
20308 SEP —
30 грн.
10+27 грн.
50+24 грн.
100+22,50 грн.
— 1000V;35A 17.5 DIP — 1000V 35A Diode bridge 50pcs —
20914 SEP —
23 грн.
10+20,70 грн.
50+18,40 грн.
100+17,25 грн.
— 1000V;15A 17.5 DIP — 1000V 15A Diode bridge 50pcs —
21103 MIC —
2.50 грн.
100+2,25 грн.
200+2 грн.
500+1,75 грн.
— R6(6A; 1000V) 1.5 DIP R-6 1000V 6A Rectifier 200pcs single
21104 MIC —
3 грн.
100+2,70 грн.
200+2,40 грн.
500+2,10 грн.
— DO27(5A; 1000V; 75ns) 0.7 DIP DO-27 1000V 5A Fast 500pcs single
21105 TOSHIBA —
1.50 грн.
10+1,35 грн.
50+1,20 грн.
100+1,12 грн.
— MBS1(0.5A; 1000V) 0.5 SMD MBS1 1000V 500mA Rectifier 3000pcs —
21410 СНГ —
5 грн.
50+4,50 грн.
200+4 грн.
500+3,50 грн.
— Diode assembly, each consisting of four silicon planar epitaxial switching diodes with separate terminals. Are issued in the plastic case with flexible conclusions. 0.25 SMD — 50V 20mA Pulse 100 pieces. assembly
21632 SEP —
16 грн.
10+14,40 грн.
50+12,80 грн.
100+12 грн.
— 4 DIP GBJ 1000V 25A Rectifier 100 pieces. —
21633 — —
9.50 грн.
10+8,55 грн.
50+7,60 грн.
100+7,12 грн.
— 1000V;6.0A — — — — — — — —
21635 SEP —
14 грн.
10+12,60 грн.
50+11,20 грн.
100+10,50 грн.
— (1000V;6.0A) — — — — — — — —
21673 СНГ —
1 грн.
50+0,90 грн.
200+0,80 грн.
500+0,70 грн.
— Silicon diodes, diffusion. Are issued in the plastic case with flexible conclusions. 0.3 DIP — 400V 300mA Rectifier 1000pcs single
21692 СНГ —
28 грн.
50+25,20 грн.
200+22,40 грн.
500+19,60 грн.
— The main technical parameters of the microwave diode 2A101B: • Conversion loss: no more than 10 dB; • Rectified current: not less than 0.5 mA; • Input noise ratio: no more than 2; • Voltage standing wave ratio: no more than 3; • Output resistance: 150...300 Ohm; • Pulse power dissipation: 250 mW; • Pulse dissipated power at short-term exposure (no more than 20 minutes): 300 mW; • Power of the flat part of the pulse leaking through the arrester: 60 mW; • Single pulse energy: 0.2 erg; • Ambient temperature: -60...+100°С; 1.5 DIP — — — Microwave 100 pieces. single
21734 LRC —
27 грн.
100+24,30 грн.
200+21,60 грн.
500+18,90 грн.
— 4.1 Crimping — 6kV 100mA High voltage 50pcs single
21735 SANKEN —
46 грн.
100+41,40 грн.
200+36,80 грн.
500+32,20 грн.
— 3.7 Crimping — 12kV 500mA High voltage 50pcs —
21736 Sunmate —
38 грн.
100+34,20 грн.
200+30,40 грн.
500+26,60 грн.
— 2.8 DIP — 12kV 500mA High voltage 100 pieces. single
22381 СНГ —
54 грн.
50+48,60 грн.
200+43,20 грн.
500+37,80 грн.
— • Operating frequency: 0.75...10 GHz; • Conversion loss: no more than 5.8 dB; • Rectified current: 1.2...3 mA; • Normalized noise figure: 5.2...6 dB; • Voltage standing wave ratio: no more than 1.05...2; • Output resistance: 220...480 Ohm; • Continuous power dissipation: 25mW • Pulse power dissipation: 100 mW; • Burnout energy: 10 erg; • Ambient temperature: -60...+125°С; 0.03 SMD — — — Microwave 100 pieces. single
22424 СНГ —
40 грн.
50+36 грн.
200+32 грн.
500+28 грн.
— Diode 3A539A arsenidogallium, epitaxial, with a Schottky barrier, microwave, pulsed. It is intended for application in pulse devices of nanosecond range. Available in a plastic case with flexible leads. 0.2 DIP — — — Microwave 24pcs single
22455 DC COMPONENTS —
2 грн.
100+1,80 грн.
200+1,60 грн.
500+1,40 грн.
— 1 DIP DO-201AD 20V 3.0A Schottky 500pcs single
22456 DC COMPONENTS —
2.20 грн.
100+1,98 грн.
200+1,76 грн.
500+1,54 грн.
— 1 DIP DO-201AD 30V 3.0A Schottky 500pcs single
22483 INTERNATIONAL RECTIFIER —
24 грн.
100+21,60 грн.
200+19,20 грн.
500+16,80 грн.
— 2.5 DIP TO-220 150V 20A Schottky 50pcs double common cathode
22486 TOSHIBA —
1 грн.
100+0,90 грн.
200+0,80 грн.
500+0,70 грн.
— 1A 1000V 0.34 SMD SMA 1000V 1A Rectifier 2000pcs single
22488 TOSHIBA —
1.50 грн.
100+1,35 грн.
200+1,20 грн.
500+1,05 грн.
— 0.3 SMD SMA 40V 2A Schottky 2000pcs single
22492 DC COMPONENTS —
10 грн.
10+9 грн.
50+8 грн.
100+7,50 грн.
— 2.5 DIP BR3 1000V 3.0A Diode bridge 200pcs —