Diodes, bridges
Filter layout:
|
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Diode type | Factory packaging | Diode design |
|---|
|
Diode D311A
#8894
|
22788 | СНГ | — |
3 грн.
|
|
— | Germanium, mesadiffusion, pulsed. | 0.3 | DIP | D104 | 30V | 80mA | Pulse | 100 pieces. | single | |||||||
|
Diode D405A
#8896
|
70035 | СНГ | — |
12 грн.
|
|
— | Diode D405A silicon point mixing. Designed for use in frequency converters at a wavelength of 3 cm. | 2.5 | DIP | — | — | — | Microwave | 20pcs | single | |||||||
|
Microwave diode D405B
#8897
|
24230 | СНГ | — |
22 грн.
|
|
— | Diode D405B silicon point mixing. Designed for use in frequency converters at a wavelength of 3 cm. | 2.5 | DIP | — | — | — | Microwave | — | single | |||||||
|
Diode D405AP
#8898
|
22968 | СНГ | — |
25 грн.
|
|
— | The main technical parameters of the microwave diode D405AP: • Conversion loss: no more than 8.5 dB; • Rectified current: not less than 1 mA; • Rated noise figure: 8.5 dB; • Output noise ratio: no more than 2; • Voltage standing wave ratio: no more than 1.7; • Output impedance: 300...500 Ohm; • Continuous dissipated microwave power: 20 mW; • Pulse power dissipation: 300 mW; • Ambient temperature: -60...+100 °С | 3 | DIP | — | — | — | Microwave | 50pcs | single | |||||||
|
Diode D405BP
#8899
|
70038 | СНГ | — |
12 грн.
|
|
— | Diode D405A silicon point mixing. Designed for use in frequency converters at a wavelength of 3 cm. | 2.5 | DIP | — | — | — | Microwave | 20pcs | single | |||||||
|
Diode bridge RS407
#9020
|
20570 | — | — |
7 грн.
|
|
— | 1000V;4.0A | — | — | — | — | — | — | — | — | |||||||
|
Diode STTH15R06FP
#9447
|
20401 | ST MICROELECTRONICS | — |
14 грн.
|
|
— | 2 | DIP | TO-220F | 600V | 15A | Fast | 50pcs | single | ||||||||
|
Diode Bridge KBPC2510
#9667
|
20281 | SEP | — |
28 грн.
|
|
— | 1000V;25A | 17.5 | DIP | — | 1000V | 25A | Diode bridge | 50pcs | — | |||||||
|
Diode Bridge KBPC3510
#9668
|
20308 | SEP | — |
30 грн.
|
|
— | 1000V;35A | 17.5 | DIP | — | 1000V | 35A | Diode bridge | 50pcs | — | |||||||
|
Diode Bridge KBPC1510
#9681
|
20914 | SEP | — |
23 грн.
|
|
— | 1000V;15A | 17.5 | DIP | — | 1000V | 15A | Diode bridge | 50pcs | — | |||||||
|
Diode 6A10
#9732
|
21103 | MIC | — |
2.50 грн.
|
|
— | R6(6A; 1000V) | 1.5 | DIP | R-6 | 1000V | 6A | Rectifier | 200pcs | single | |||||||
|
Diode HER508
#9733
|
21104 | MIC | — |
3 грн.
|
|
— | DO27(5A; 1000V; 75ns) | 0.7 | DIP | DO-27 | 1000V | 5A | Fast | 500pcs | single | |||||||
|
Diode Bridge MB10S
#9734
|
21105 | TOSHIBA | — |
1.50 грн.
|
|
— | MBS1(0.5A; 1000V) | 0.5 | SMD | MBS1 | 1000V | 500mA | Rectifier | 3000pcs | — | |||||||
|
Diode Assembly KDS523V
#9819
|
21410 | СНГ | — |
5 грн.
|
|
— | Diode assembly, each consisting of four silicon planar epitaxial switching diodes with separate terminals. Are issued in the plastic case with flexible conclusions. | 0.25 | SMD | — | 50V | 20mA | Pulse | 100 pieces. | assembly | |||||||
|
Diode Bridge GBJ2510
#9853
|
21632 | SEP | — |
16 грн.
|
|
— | 4 | DIP | GBJ | 1000V | 25A | Rectifier | 100 pieces. | — | ||||||||
|
Diode bridge RS607
#9854
|
21633 | — | — |
9.50 грн.
|
|
— | 1000V;6.0A | — | — | — | — | — | — | — | — | |||||||
|
Diode Bridge KBPC610
#9856
|
21635 | SEP | — |
14 грн.
|
|
— | (1000V;6.0A) | — | — | — | — | — | — | — | — | |||||||
|
Diode KD105B (type 1)
#9888
|
21673 | СНГ | — |
1 грн.
|
|
— | Silicon diodes, diffusion. Are issued in the plastic case with flexible conclusions. | 0.3 | DIP | — | 400V | 300mA | Rectifier | 1000pcs | single | |||||||
|
Microwave diode 2A101A
#9896
|
21692 | СНГ | — |
28 грн.
|
|
— | The main technical parameters of the microwave diode 2A101B: • Conversion loss: no more than 10 dB; • Rectified current: not less than 0.5 mA; • Input noise ratio: no more than 2; • Voltage standing wave ratio: no more than 3; • Output resistance: 150...300 Ohm; • Pulse power dissipation: 250 mW; • Pulse dissipated power at short-term exposure (no more than 20 minutes): 300 mW; • Power of the flat part of the pulse leaking through the arrester: 60 mW; • Single pulse energy: 0.2 erg; • Ambient temperature: -60...+100°С; | 1.5 | DIP | — | — | — | Microwave | 100 pieces. | single | |||||||
| 21734 | LRC | — |
27 грн.
|
|
— | 4.1 | Crimping | — | 6kV | 100mA | High voltage | 50pcs | single | |||||||||
| 21735 | SANKEN | — |
46 грн.
|
|
— | 3.7 | Crimping | — | 12kV | 500mA | High voltage | 50pcs | — | |||||||||
| 21736 | Sunmate | — |
38 грн.
|
|
— | 2.8 | DIP | — | 12kV | 500mA | High voltage | 100 pieces. | single | |||||||||
|
Microwave diode 3A117AR-6
#10374
|
22381 | СНГ | — |
54 грн.
|
|
— | • Operating frequency: 0.75...10 GHz; • Conversion loss: no more than 5.8 dB; • Rectified current: 1.2...3 mA; • Normalized noise figure: 5.2...6 dB; • Voltage standing wave ratio: no more than 1.05...2; • Output resistance: 220...480 Ohm; • Continuous power dissipation: 25mW • Pulse power dissipation: 100 mW; • Burnout energy: 10 erg; • Ambient temperature: -60...+125°С; | 0.03 | SMD | — | — | — | Microwave | 100 pieces. | single | |||||||
|
Microwave diode 3A539A
#10412
|
22424 | СНГ | — |
40 грн.
|
|
— | Diode 3A539A arsenidogallium, epitaxial, with a Schottky barrier, microwave, pulsed. It is intended for application in pulse devices of nanosecond range. Available in a plastic case with flexible leads. | 0.2 | DIP | — | — | — | Microwave | 24pcs | single | |||||||
| 22455 | DC COMPONENTS | — |
2 грн.
|
|
— | 1 | DIP | DO-201AD | 20V | 3.0A | Schottky | 500pcs | single | |||||||||
| 22456 | DC COMPONENTS | — |
2.20 грн.
|
|
— | 1 | DIP | DO-201AD | 30V | 3.0A | Schottky | 500pcs | single | |||||||||
|
Diode 20CTQ150
#10460
|
22483 | INTERNATIONAL RECTIFIER | — |
24 грн.
|
|
— | 2.5 | DIP | TO-220 | 150V | 20A | Schottky | 50pcs | double common cathode | ||||||||
|
Diode M7 (=1N4007smd)
#10463
|
22486 | TOSHIBA | — |
1 грн.
|
|
— | 1A 1000V | 0.34 | SMD | SMA | 1000V | 1A | Rectifier | 2000pcs | single | |||||||
|
Schottky diode SS24
#10465
|
22488 | TOSHIBA | — |
1.50 грн.
|
|
— | 0.3 | SMD | SMA | 40V | 2A | Schottky | 2000pcs | single | ||||||||
| 22492 | DC COMPONENTS | — |
10 грн.
|
|
— | 2.5 | DIP | BR3 | 1000V | 3.0A | Diode bridge | 200pcs | — |