Diodes, bridges

Results: 448

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Mounting type Type of shell Urev. max, V Ipr. max. Diode type Factory packaging Diode design
22788 СНГ
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
Germanium, mesadiffusion, pulsed. 0.3 DIP D104 30V 80mA Pulse 100 pieces. single
70035 СНГ
12 грн.
50+10,80 грн.
200+9,60 грн.
500+8,40 грн.
Diode D405A silicon point mixing. Designed for use in frequency converters at a wavelength of 3 cm. 2.5 DIP Microwave 20pcs single
24230 СНГ
22 грн.
50+19,80 грн.
200+17,60 грн.
500+15,40 грн.
Diode D405B silicon point mixing. Designed for use in frequency converters at a wavelength of 3 cm. 2.5 DIP Microwave single
22968 СНГ
25 грн.
50+22,50 грн.
200+20 грн.
500+17,50 грн.
The main technical parameters of the microwave diode D405AP: • Conversion loss: no more than 8.5 dB; • Rectified current: not less than 1 mA; • Rated noise figure: 8.5 dB; • Output noise ratio: no more than 2; • Voltage standing wave ratio: no more than 1.7; • Output impedance: 300...500 Ohm; • Continuous dissipated microwave power: 20 mW; • Pulse power dissipation: 300 mW; • Ambient temperature: -60...+100 °С 3 DIP Microwave 50pcs single
70038 СНГ
12 грн.
50+10,80 грн.
200+9,60 грн.
500+8,40 грн.
Diode D405A silicon point mixing. Designed for use in frequency converters at a wavelength of 3 cm. 2.5 DIP Microwave 20pcs single
20570
7 грн.
10+6,30 грн.
50+5,60 грн.
100+5,25 грн.
1000V;4.0A
20401 ST MICROELECTRONICS
14 грн.
100+12,60 грн.
200+11,20 грн.
500+9,80 грн.
2 DIP TO-220F 600V 15A Fast 50pcs single
20281 SEP
28 грн.
10+25,20 грн.
50+22,40 грн.
100+21 грн.
1000V;25A 17.5 DIP 1000V 25A Diode bridge 50pcs
20308 SEP
30 грн.
10+27 грн.
50+24 грн.
100+22,50 грн.
1000V;35A 17.5 DIP 1000V 35A Diode bridge 50pcs
20914 SEP
23 грн.
10+20,70 грн.
50+18,40 грн.
100+17,25 грн.
1000V;15A 17.5 DIP 1000V 15A Diode bridge 50pcs
21103 MIC
2.50 грн.
100+2,25 грн.
200+2 грн.
500+1,75 грн.
R6(6A; 1000V) 1.5 DIP R-6 1000V 6A Rectifier 200pcs single
21104 MIC
3 грн.
100+2,70 грн.
200+2,40 грн.
500+2,10 грн.
DO27(5A; 1000V; 75ns) 0.7 DIP DO-27 1000V 5A Fast 500pcs single
21105 TOSHIBA
1.50 грн.
10+1,35 грн.
50+1,20 грн.
100+1,12 грн.
MBS1(0.5A; 1000V) 0.5 SMD MBS1 1000V 500mA Rectifier 3000pcs
21410 СНГ
5 грн.
50+4,50 грн.
200+4 грн.
500+3,50 грн.
Diode assembly, each consisting of four silicon planar epitaxial switching diodes with separate terminals. Are issued in the plastic case with flexible conclusions. 0.25 SMD 50V 20mA Pulse 100 pieces. assembly
21632 SEP
16 грн.
10+14,40 грн.
50+12,80 грн.
100+12 грн.
4 DIP GBJ 1000V 25A Rectifier 100 pieces.
21633
9.50 грн.
10+8,55 грн.
50+7,60 грн.
100+7,12 грн.
1000V;6.0A
21635 SEP
14 грн.
10+12,60 грн.
50+11,20 грн.
100+10,50 грн.
(1000V;6.0A)
21673 СНГ
1 грн.
50+0,90 грн.
200+0,80 грн.
500+0,70 грн.
Silicon diodes, diffusion. Are issued in the plastic case with flexible conclusions. 0.3 DIP 400V 300mA Rectifier 1000pcs single
21692 СНГ
28 грн.
50+25,20 грн.
200+22,40 грн.
500+19,60 грн.
The main technical parameters of the microwave diode 2A101B: • Conversion loss: no more than 10 dB; • Rectified current: not less than 0.5 mA; • Input noise ratio: no more than 2; • Voltage standing wave ratio: no more than 3; • Output resistance: 150...300 Ohm; • Pulse power dissipation: 250 mW; • Pulse dissipated power at short-term exposure (no more than 20 minutes): 300 mW; • Power of the flat part of the pulse leaking through the arrester: 60 mW; • Single pulse energy: 0.2 erg; • Ambient temperature: -60...+100°С; 1.5 DIP Microwave 100 pieces. single
21734 LRC
27 грн.
100+24,30 грн.
200+21,60 грн.
500+18,90 грн.
4.1 Crimping 6kV 100mA High voltage 50pcs single
21735 SANKEN
46 грн.
100+41,40 грн.
200+36,80 грн.
500+32,20 грн.
3.7 Crimping 12kV 500mA High voltage 50pcs
21736 Sunmate
38 грн.
100+34,20 грн.
200+30,40 грн.
500+26,60 грн.
2.8 DIP 12kV 500mA High voltage 100 pieces. single
22381 СНГ
54 грн.
50+48,60 грн.
200+43,20 грн.
500+37,80 грн.
• Operating frequency: 0.75...10 GHz; • Conversion loss: no more than 5.8 dB; • Rectified current: 1.2...3 mA; • Normalized noise figure: 5.2...6 dB; • Voltage standing wave ratio: no more than 1.05...2; • Output resistance: 220...480 Ohm; • Continuous power dissipation: 25mW • Pulse power dissipation: 100 mW; • Burnout energy: 10 erg; • Ambient temperature: -60...+125°С; 0.03 SMD Microwave 100 pieces. single
22424 СНГ
40 грн.
50+36 грн.
200+32 грн.
500+28 грн.
Diode 3A539A arsenidogallium, epitaxial, with a Schottky barrier, microwave, pulsed. It is intended for application in pulse devices of nanosecond range. Available in a plastic case with flexible leads. 0.2 DIP Microwave 24pcs single
22455 DC COMPONENTS
2 грн.
100+1,80 грн.
200+1,60 грн.
500+1,40 грн.
1 DIP DO-201AD 20V 3.0A Schottky 500pcs single
22456 DC COMPONENTS
2.20 грн.
100+1,98 грн.
200+1,76 грн.
500+1,54 грн.
1 DIP DO-201AD 30V 3.0A Schottky 500pcs single
22483 INTERNATIONAL RECTIFIER
24 грн.
100+21,60 грн.
200+19,20 грн.
500+16,80 грн.
2.5 DIP TO-220 150V 20A Schottky 50pcs double common cathode
22486 TOSHIBA
1 грн.
100+0,90 грн.
200+0,80 грн.
500+0,70 грн.
1A 1000V 0.34 SMD SMA 1000V 1A Rectifier 2000pcs single
22488 TOSHIBA
1.50 грн.
100+1,35 грн.
200+1,20 грн.
500+1,05 грн.
0.3 SMD SMA 40V 2A Schottky 2000pcs single
22492 DC COMPONENTS
10 грн.
10+9 грн.
50+8 грн.
100+7,50 грн.
2.5 DIP BR3 1000V 3.0A Diode bridge 200pcs