Diodes, bridges

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Mounting type Type of shell Urev. max, V Ipr. max. Ipr. imp. max. Diode type Factory packaging Diode design
Microwave diode 2A511A
Microwave diode 2A511A
#12778
 25135 СНГ —
90 грн.
50+81 грн.
200+72 грн.
500+63 грн.
 — The main technical parameters of the microwave diode 2A511A: • Total capacitance: 0.55...0.75 pF; • Forward loss resistance: no more than 2 ohms; • Accumulated diode charge: no more than 350 nC; • Constant reverse voltage: 50...200 V; • Constant forward current: 700 mA; • Value of admissible static potential: 100 V. 0.3 DIP — — — — Microwave 20pcs single
Microwave diode DK-V2
Microwave diode DK-V2
#12779
 25136 СНГ —
35 грн.
50+31,50 грн.
200+28 грн.
500+24,50 грн.
 — Microwave diodes DK-V2 silicon, point, detector. Designed to detect signals at a wavelength of 10 cm. 0.5 DIP — — — — Microwave 40pcs single
Diode 1D507A (=GD507A)
Diode 1D507A (=GD507A)
#12780
 25137 СНГ —
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
 — Diodes 1D507A germanium, microalloy, pulsed. Designed to limit and modulate pulse signals. The main technical characteristics of the diode 1D507A: • Uopp max - Maximum direct reverse voltage: 20 V; • Inp max - Maximum forward current: 16 mA; • Unp - DC forward voltage: no more than 0.5 V at Inp 5 mA; • Iobr - DC reverse current: no more than 50 µA at Uobr 20 V; • tvoc arr - Reverse recovery time: 0.1 µs; • Sd - Total capacitance: 0.8 pF. 0.25 DIP КД-121 20V 16mA 200mA Pulse 100 pieces. single
Diode D311
Diode D311
#12781
 25138 СНГ —
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
 — Germanium, mesadiffusion, pulsed. 0.3 DIP D104 30V 40mA — Pulse 100 pieces. single
Diode Bridge MB10M
Diode Bridge MB10M
#13575
 25720 LUGUANG ELECTRONIC —
1.50 грн.
10+1,35 грн.
50+1,20 грн.
100+1,12 грн.
 — 0.3 DIP — 1000V 800mA 30A Diode bridge 100 pieces. —
Diode bridge KBU810 (=RS807)
Diode bridge KBU810 (=RS807)
#13638
 25791 SEP —
15 грн.
10+13,50 грн.
50+12 грн.
100+11,25 грн.
 — Diode bridge KBU810 8A 1000V. 6.5 DIP — 1000V 8A — — 100 pieces. —
Diode bridge KBL410 (=RS407)
Diode bridge KBL410 (=RS407)
#13639
 25792 SEP —
7 грн.
10+6,30 грн.
50+5,60 грн.
100+5,25 грн.
 — Diode bridge KBL410 (=RS407) 1000V; 4A. 4.2 DIP — 1000V 4А — — 200pcs —
Diode bridge KBP210 (=RS207)
Diode bridge KBP210 (=RS207)
#13640
 25793 SEP —
5 грн.
10+4,50 грн.
50+4 грн.
100+3,75 грн.
 — Diode bridge KBP210 2A 1000V. 1.5 DIP — 1000V 2A — — 250pcs —
Diode D243A
Diode D243A
#13780
 25959 СНГ —
35 грн.
50+31,50 грн.
200+28 грн.
500+24,50 грн.
 — Diodes D243A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. The main technical characteristics of the diode D243A: • Uopp max - Maximum direct reverse voltage: 200 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 3000 μA at Uobr 200 V. 13 Screw — 200V 10A — Rectifier 50pcs single
Diode SS310
Diode SS310
#13805
 25984 WTE —
2.50 грн.
100+2,25 грн.
200+2 грн.
500+1,75 грн.
 — 0.4 SMD SMB 100V 3.0A — Schottky 3000pcs single
Diode SR260
Diode SR260
#13806
 25985 MIC —
1.50 грн.
100+1,35 грн.
200+1,20 грн.
500+1,05 грн.
 — 0.6 DIP DO-15 60V 2A — Schottky 500pcs single
Diode MUR460
Diode MUR460
#13807
 25986 ON SEMICONDUCTOR —
4 грн.
100+3,60 грн.
200+3,20 грн.
500+2,80 грн.
 — 0.8 DIP DO-201AD 600V 4А — Fast 1000pcs single
Diode RS1M
Diode RS1M
#13808
 25987 DIOTEC SEMICONDUCTOR —
0.80 грн.
100+0,72 грн.
200+0,64 грн.
500+0,56 грн.
 — 0.2 SMD DO-214AC, SMA 1000V 1A — Rectifier 5000pcs single
Diode column KTS114B
Diode column KTS114B
#13811
 25989 СНГ —
15 грн.
50+13,50 грн.
200+12 грн.
500+10,50 грн.
 — Pillars of silicon, diffusion diodes, rectifiers. Designed for use in high-voltage secondary power supply units with additional sealing. 1.6 DIP — 6kV 50mA — High voltage 100 pieces. single
Diode KD411GM
Diode KD411GM
#13926
 26105 СНГ —
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
 — Silicon diode, diffusion, high-speed. 2 DIP КД-8 500V 2A — Fast 200pcs single
Diode KD203D
Diode KD203D
#13931
 26110 СНГ —
40 грн.
50+36 грн.
200+32 грн.
500+28 грн.
 — Diodes KD203D silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 5 kHz. The main technical characteristics of the diode 2D203D: • Uopp max - Maximum direct reverse voltage: 700 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 1500 μA at Uobr 1000 V. 13 Screw — 700V 10A — Rectifier 25pcs single
Diode D245A
Diode D245A
#13934
 26113 СНГ —
35 грн.
50+31,50 грн.
200+28 грн.
500+24,50 грн.
 — Diodes D245A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. The main technical characteristics of the D245A diode: • Uopp max - Maximum direct reverse voltage: 300 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 3000 μA at Uobr 300 V. 13 Screw — 300V 10A — Rectifier 40pcs single
Diode D246B
Diode D246B
#13935
 26114 СНГ —
30 грн.
50+27 грн.
200+24 грн.
500+21 грн.
 — Diodes D246B silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. The main technical characteristics of the diode D246B: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1.5 V at Inp 5 A; • Iobr - Constant reverse current: no more than 3000 µA at Uobr 400 V. 13 Screw — 400V 5A — Rectifier 40pcs single
Diode D246A
Diode D246A
#13936
 26115 СНГ —
40 грн.
50+36 грн.
200+32 грн.
500+28 грн.
 — Diodes D246A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. The main technical characteristics of the D246A diode: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 3000 µA at Uobr 400 V. 13 DIP — 400V 10A — Rectifier 40pcs single
Diode D245
Diode D245
#13938
 26117 СНГ —
35 грн.
50+31,50 грн.
200+28 грн.
500+24,50 грн.
 — Diodes D245 silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. The main technical characteristics of the diode D245: • Uopp max - Maximum direct reverse voltage: 300 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1.25 V at Inp 10 A; • Iobr - Constant reverse current: no more than 3000 μA at Uobr 300 V. 13 Screw — 300V 10A — Rectifier 40pcs single
Diode D7Zh
Diode D7Zh
#13950
 26130 СНГ —
9 грн.
50+8,10 грн.
200+7,20 грн.
500+6,30 грн.
 — Diodes germanium D7Zh, alloy. The main technical characteristics of the D7Zh diode: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 300 mA; • fd - Operating frequency of the diode: 2.4 kHz; • Unp - DC forward voltage: no more than 0.5 V at Inp 300 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 400 V. 1.6 DIP КД-8 300V 300mA — Rectifier 100 pieces. single
Diode bridge KTS407A
Diode bridge KTS407A
#13951
 26131 СНГ —
30 грн.
 — KTS407A A block of silicon, mesadiffusion diodes connected in a bridge circuit. Available in a plastic case with flexible leads. The main technical characteristics of the diode KTS407A: • Uobr and max - Maximum impulse reverse voltage: 400 V; • Inp max - Maximum forward current: 500 mA; • Inp and max - Maximum pulse forward current: 3 A; • fd - Operating frequency of the diode: 20 kHz; • Iobr - Constant reverse current: no more than 5 μA at Uobr 400 V; • tvoc - Reverse recovery time: 5 µs. 0.5 DIP — 400V 500mA 3A Diode bridge 500pcs —
Diode D2V
Diode D2V
#13957
 26137 СНГ —
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
 — Diodes D2V germanium, point. Designed to convert and detect signals with a frequency of up to 150 MHz in amplitude and phase detectors, as video detectors and DC component restorers in televisions, in ring modulators and frequency converters, in counting circuits and in low-power rectifiers. The main technical characteristics of the diode D2V: • Uopp max - Maximum direct reverse voltage: 30 V; • Inp max - Maximum forward current: 25 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 9 mA; • Iobr - Constant reverse current: no more than 250 µA at Uobr 30 V; • tvoc arr - Reverse recovery time: 3 µs; • Sd - Total capacitance: 0.2 pF at Uobr 1.5 V. 0.7 DIP КД-4 30V 25mA — Detector 100 pieces. single
Diode D2G
Diode D2G
#13958
 26138 СНГ —
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
 — Diodes D2G germanium, point. Designed to convert and detect signals with a frequency of up to 150 MHz in amplitude and phase detectors, as video detectors and DC component restorers in televisions, in ring modulators and frequency converters, in counting circuits and in low-power rectifiers. The main technical characteristics of the diode D2G: • Uopp max - Maximum direct reverse voltage: 50 V; • Inp max - Maximum forward current: 16 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 2 mA; • Iobr - Constant reverse current: no more than 250 μA at Uobr 50 V; • tvoc arr - Reverse recovery time: 3 µs; • Sd - Total capacitance: 0.2 pF at Uobr 1.5 V. 0.7 DIP КД-4 50V 16mA — Detector 100 pieces. single
Diode D2D
Diode D2D
#13959
 26139 СНГ —
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
 — Diodes D2D germanium, point. Designed to convert and detect signals with a frequency of up to 150 MHz in amplitude and phase detectors, as video detectors and DC component restorers in televisions, in ring modulators and frequency converters, in counting circuits and in low-power rectifiers. The main technical characteristics of the diode D2D: • Uopp max - Maximum direct reverse voltage: 50 V; • Inp max - Maximum forward current: 16 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 4.5 mA; • Iobr - Constant reverse current: no more than 250 μA at Uobr 50 V; • tvoc arr - Reverse recovery time: 3 µs; • Sd - Total capacitance: 0.2 pF at Uobr 1.5 V. 0.7 DIP КД-4 50V 16mA — Detector 100 pieces. single
Diode D2E
Diode D2E
#13960
 26140 СНГ —
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
 — Diodes D2E germanium, point. Designed to convert and detect signals with a frequency of up to 150 MHz in amplitude and phase detectors, as video detectors and DC component restorers in televisions, in ring modulators and frequency converters, in counting circuits and in low-power rectifiers. The main technical characteristics of the D2E diode: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 16 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 4.5 mA; • Iobr - Constant reverse current: no more than 250 µA at Uobr 100 V; • tvoc arr - Reverse recovery time: 3 µs; • Sd - Total capacitance: 0.2 pF at Uobr 1.5 V. 0.7 DIP КД-4 100V 16mA — Detector 100 pieces. single
Diode D2I
Diode D2I
#13962
 26142 СНГ —
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
 — Diodes D2I germanium, point. Designed to convert and detect signals with a frequency of up to 150 MHz in amplitude and phase detectors, as video detectors and DC component restorers in televisions, in ring modulators and frequency converters, in counting circuits and in low-power rectifiers. The main technical characteristics of the diode D2I: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 16 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 2 mA; • Iobr - Constant reverse current: no more than 250 µA at Uobr 100 V; • tvoc arr - Reverse recovery time: 3 µs; • Sd - Total capacitance: 0.2 pF at Uobr 1.5 V. 0.7 DIP КД-4 100V 16mA — Detector 100 pieces. single
Power diode V25-9
Power diode V25-9
#14264
 26463 СНГ —
75 грн.
50+67,50 грн.
200+60 грн.
500+52,50 грн.
 — B25-9 Diffusion silicon diode. It is intended for operation in circuits of static converters of electric power of direct and alternating currents at frequencies up to 2 kHz. Are issued in the glass-to-metal case with a flexible conclusion. Average direct current - 25A Repetitive impulse reverse voltage - 900 V Cooling air natural or forced. 90 Screw — 900V 25A — Rectifier 1 PC. single
Diode bridge KTS405V
Diode bridge KTS405V
#14364
 26576 СНГ —
7 грн.
 — The main technical characteristics of the KTs405V diode: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 μA at Uobr 400 V. 5.2 DIP — 400V 1A — Diode bridge 500pcs —
Diode bridge KTS402V
Diode bridge KTS402V
#14369
 26579 СНГ —
20 грн.
 — Block of silicon, diffusion diodes. The main technical characteristics of the KTs402V diode: • Uobr and max - Maximum impulse reverse voltage: 400 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 μA at Uobr 400 V. 5.7 DIP — 400V 1A — Diode bridge 100 pieces. —