Diodes, bridges
Filter layout:
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| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Diode type | Power | Factory packaging | Diode design |
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Diode DCH251-160x-7
#10727
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22784 | СНГ | — |
130 грн.
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— | Fast recovery silicon diffusion diode. | 110 | Cooler | — | 700V | 160А | Rectifier | — | 6pcs | single | |||||||
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Diode Bridge MB10F
#11200
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23324 | FAIRCHILD SEMICONDUCTOR | — |
1 грн.
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— | 0.4 | SMD | MBS1 | 1000V | 500mA | Diode bridge | — | 2500pcs | — | ||||||||
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Diode KD927A
#11217
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23351 | СНГ | — |
12 грн.
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— | Diode KD927A silicon, impulse. Designed for use in pulse devices | 0.1 | DIP | КД-2 | 35V | 10mA | Pulse | — | 4 things. | single | |||||||
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Rectifier pole KTS201D
#11219
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23353 | СНГ | — |
81 грн.
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— | A column of silicon, diffusion, avalanche diodes, pulsed. Designed to convert alternating pulsed voltage with a frequency of up to 1 kHz. | 63 | Screw | — | 10kV | 500mA | High voltage | — | 20pcs | assembly | |||||||
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Diode 1A7
#11314
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23419 | MIC | — |
0.50 грн.
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— | 0.34 | DIP | R-1 | 1000V | 1A | Rectifier | — | 1000pcs | single | ||||||||
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Diode 12CWQ10FN
#11336
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23442 | INTERNATIONAL RECTIFIER | — |
17 грн.
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— | 0.5 | SMD | DPAK;TO-252 | 100V | 12A | Schottky | — | 3000pcs | double common cathode | ||||||||
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Microwave diode AA112B
#11584
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23815 | СНГ | — |
22 грн.
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— | Designed for use in frequency converters in the centimeter wavelength range as part of hybrid integrated circuits and microassemblies. | 0.03 | DIP | КД-1 | — | — | Microwave | 150мВт | 50pcs | single | |||||||
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Power diode D161-200-12
#11684
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23913 | СНГ | — |
160 грн.
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— | D161-200-12 Diffusion silicon diode. It is intended for operation in circuits of static converters of electric power of direct and alternating currents at frequencies up to 2 kHz. They are produced in a ceramic-metal housing with a flexible lead, direct and reverse (with X sign) polarity. For diodes of direct polarity, the anode is the base of the case, reverse polarity is a flexible lead. Average direct current - 200 A Repetitive impulse reverse voltage - 1200 V Cooling air natural or forced. | 270 | DIP | — | 1200V | 200А | Rectifier | — | 1 PC. | single | |||||||
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Diode column D1005A
#11690
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23919 | СНГ | — |
25 грн.
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— | Pillar of silicon, alloy diodes, rectifier. Designed to convert alternating voltage with a frequency of up to 1 kHz. | 34 | Screw | — | 4kV | 50mA | High voltage | — | 24pcs | single | |||||||
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Diode D226
#11880
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24133 | СНГ | — |
6 грн.
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— | The main technical characteristics of the diode D226: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 300 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 300 mA; • Iobr - Constant reverse current: no more than 50 μA at Uobr 400 V. | 2 | DIP | — | 400V | 300mA | Rectifier | — | 200pcs | single | |||||||
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Diode D104A
#11881
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24134 | СНГ | — |
3 грн.
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— | The main technical characteristics of the D104A diode: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 30 mA; • fd - Operating frequency of the diode: 150 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 1 mA; • Iobr - Constant reverse current: no more than 5 μA at Uobr 100 V; • tvoc arr - Reverse recovery time: 0.5 µs; • Sd - Total capacitance: 0.7 pF at Uobr 0.3 V. | 0.5 | DIP | D104 | 100V | 30mA | Pulse | — | 100 pieces. | single | |||||||
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Diode KD522B
#11882
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24135 | СНГ | — |
1 грн.
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— | The main technical characteristics of the KD522B diode: • Uopp max - Maximum direct reverse voltage: 50 V; • Inp max - Maximum forward current: 100 mA; • Unp - DC forward voltage: no more than 1.1 V at Inp 100 mA; • Iobr - Constant reverse current: no more than 2 μA at Uobr 50 V; • tvoc arr - Reverse recovery time: 0.004 µs; • Sd - Total capacitance: 4 pF. | 0.2 | DIP | КД-2 | 50V | 100mA | Pulse | — | 500pcs | single | |||||||
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Diode D303
#11884
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24137 | СНГ | — |
10 грн.
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— | Diode germanium alloy. | 10.5 | Screw | — | 150V | 3.0A | Rectifier | — | 30pcs | single | |||||||
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Diode D103A
#11888
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24141 | СНГ | — |
3 грн.
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— | Diodes silicon D103A, point, universal. Designed to work in TV video channels, in AGC systems and discriminators of FM and AM receivers. | 0.4 | DIP | D104 | 30V | 30mA | High frequency | — | 200pcs | single | |||||||
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Diode D106
#11981
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24270 | СНГ | — |
3 грн.
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— | Microalloy, silicon, universal. Designed for use in AGC systems, discriminators, video amplifiers. | 0.3 | DIP | D104 | 30V | 30mA | Rectifier | — | 100 pieces. | single | |||||||
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Diode KD503B
#11986
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24275 | СНГ | — |
2 грн.
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— | Designed for use as switching elements in high-speed impulse devices of the nanosecond range. Are issued in the glass case with flexible conclusions. | 0.25 | DIP | КД-121 | 30V | 20mA | Pulse | — | 100 pieces. | single | |||||||
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Diode D214
#12160
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24452 | СНГ | — |
25 грн.
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— | Diodes D214 silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. | 13 | Screw | КДЮ-11 | 100V | 10A | Rectifier | — | 40pcs | single | |||||||
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Diode D232A
#12223
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24602 | СНГ | — |
35 грн.
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— | The main technical characteristics of the diode D232A: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 3000 µA at Uobr 400 V. | 11 | Screw | КДЮ-11 | 400V | 10A | Rectifier | — | 40pcs | single | |||||||
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Diode 2D202D (=KD202D)
#12226
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24605 | СНГ | — |
9 грн.
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— | The main technical characteristics of the diode 2D202D: • Uobr and max - Maximum impulse reverse voltage: 200 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 µA at Uobr 200 V. | 5 | Screw | КДЮ-11 | 200V | 5A | Rectifier | — | 100 pieces. | single | |||||||
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Diode MUR3020WT
#12600
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24152 | ON SEMICONDUCTOR | — |
40 грн.
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— | 6.5 | DIP | TO-247 | 200V | 2x15A | Fast | — | 30pcs | double common cathode | ||||||||
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Diode STTH3003CW
#12601
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24151 | ST MICROELECTRONICS | — |
72 грн.
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— | 4.5 | DIP | TO-247 | 300V | 2x15A | Fast | — | 30pcs | double common cathode | ||||||||
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Diode RHRG30120
#12602
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24150 | ON SEMICONDUCTOR | — |
48 грн.
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— | 5 | DIP | TO247-2 | 1200V | 30A | Fast | — | 30pcs | single | ||||||||
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Diode STTH6012W
#12603
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24149 | ST MICROELECTRONICS | — |
120 грн.
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— | 5 | DIP | TO247-2 | 1200V | 60A | Fast | — | 30pcs | single | ||||||||
| 24089 | FAIRCHILD SEMICONDUCTOR | — |
54 грн.
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— | 5 | DIP | TO-3P | 300V | 2x30A | Fast | — | 30pcs | double common cathode | |||||||||
| 24090 | FAIRCHILD SEMICONDUCTOR | — |
48 грн.
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— | 5 | DIP | TO-3P | 600V | 2x15A | Fast | — | 30pcs | double common cathode | |||||||||
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Diode MUR1660AC
#12639
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24991 | HKZ | — |
16 грн.
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— | TO220-2pin(16A; 600V; 35ns). | 2.5 | DIP | TO-220 | 600V | 16A | Fast | — | 50pcs | single | |||||||
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Diode SF28
#12641
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24994 | MIC | — |
1 грн.
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— | 0.3 | DIP | DO-15 | 600V | 2A | Fast | — | 500pcs | single | ||||||||
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Diode EC10QS04 (=S4)
#12763
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25119 | Nihon | — |
1 грн.
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— | 0.25 | SMD | SMA | 40V | 1A | Schottky | — | 2000pcs | single | ||||||||
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Microwave diode D605
#12776
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25133 | СНГ | — |
40 грн.
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— | Microwave diode D605 silicon, point, detector. It is intended for detection of pulsed amplitude-modulated signals, indication of pulsed power in the wave range 3.2..10cm. | 2.5 | DIP | — | — | — | Microwave | — | 10 pieces. | single | |||||||
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Microwave diode D408
#12777
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25134 | СНГ | — |
35 грн.
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— | Diode D408 silicon point mixing. Designed for use in frequency converters in the wavelength range of 4.5..10 s. | 2.5 | DIP | — | — | — | Microwave | — | 10 pieces. | single |