Diodes, bridges

Results: 448

Filter layout: |
Filters
MPN Article Brand In stock Price Discounts Quantity Description Weight g. Mounting type Type of shell Urev. max, V Ipr. max. Diode type Power Factory packaging Diode design
22784 СНГ
130 грн.
50+117 грн.
200+104 грн.
500+91 грн.
Fast recovery silicon diffusion diode. 110 Cooler 700V 160А Rectifier 6pcs single
23324 FAIRCHILD SEMICONDUCTOR
1 грн.
10+0,90 грн.
50+0,80 грн.
100+0,75 грн.
0.4 SMD MBS1 1000V 500mA Diode bridge 2500pcs
23351 СНГ
12 грн.
50+10,80 грн.
200+9,60 грн.
500+8,40 грн.
Diode KD927A silicon, impulse. Designed for use in pulse devices 0.1 DIP КД-2 35V 10mA Pulse 4 things. single
23353 СНГ
81 грн.
50+72,90 грн.
200+64,80 грн.
500+56,70 грн.
A column of silicon, diffusion, avalanche diodes, pulsed. Designed to convert alternating pulsed voltage with a frequency of up to 1 kHz. 63 Screw 10kV 500mA High voltage 20pcs assembly
23419 MIC
0.50 грн.
100+0,45 грн.
200+0,40 грн.
500+0,35 грн.
0.34 DIP R-1 1000V 1A Rectifier 1000pcs single
23442 INTERNATIONAL RECTIFIER
17 грн.
100+15,30 грн.
200+13,60 грн.
500+11,90 грн.
0.5 SMD DPAK;TO-252 100V 12A Schottky 3000pcs double common cathode
23815 СНГ
22 грн.
50+19,80 грн.
200+17,60 грн.
500+15,40 грн.
Designed for use in frequency converters in the centimeter wavelength range as part of hybrid integrated circuits and microassemblies. 0.03 DIP КД-1 Microwave 150мВт 50pcs single
23913 СНГ
160 грн.
50+144 грн.
200+128 грн.
500+112 грн.
D161-200-12 Diffusion silicon diode. It is intended for operation in circuits of static converters of electric power of direct and alternating currents at frequencies up to 2 kHz. They are produced in a ceramic-metal housing with a flexible lead, direct and reverse (with X sign) polarity. For diodes of direct polarity, the anode is the base of the case, reverse polarity is a flexible lead. Average direct current - 200 A Repetitive impulse reverse voltage - 1200 V Cooling air natural or forced. 270 DIP 1200V 200А Rectifier 1 PC. single
23919 СНГ
25 грн.
50+22,50 грн.
200+20 грн.
500+17,50 грн.
Pillar of silicon, alloy diodes, rectifier. Designed to convert alternating voltage with a frequency of up to 1 kHz. 34 Screw 4kV 50mA High voltage 24pcs single
24133 СНГ
6 грн.
50+5,40 грн.
200+4,80 грн.
500+4,20 грн.
The main technical characteristics of the diode D226: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 300 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 300 mA; • Iobr - Constant reverse current: no more than 50 μA at Uobr 400 V. 2 DIP 400V 300mA Rectifier 200pcs single
24134 СНГ
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
The main technical characteristics of the D104A diode: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 30 mA; • fd - Operating frequency of the diode: 150 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 1 mA; • Iobr - Constant reverse current: no more than 5 μA at Uobr 100 V; • tvoc arr - Reverse recovery time: 0.5 µs; • Sd - Total capacitance: 0.7 pF at Uobr 0.3 V. 0.5 DIP D104 100V 30mA Pulse 100 pieces. single
24135 СНГ
1 грн.
50+0,90 грн.
200+0,80 грн.
500+0,70 грн.
The main technical characteristics of the KD522B diode: • Uopp max - Maximum direct reverse voltage: 50 V; • Inp max - Maximum forward current: 100 mA; • Unp - DC forward voltage: no more than 1.1 V at Inp 100 mA; • Iobr - Constant reverse current: no more than 2 μA at Uobr 50 V; • tvoc arr - Reverse recovery time: 0.004 µs; • Sd - Total capacitance: 4 pF. 0.2 DIP КД-2 50V 100mA Pulse 500pcs single
24137 СНГ
10 грн.
50+9 грн.
200+8 грн.
500+7 грн.
Diode germanium alloy. 10.5 Screw 150V 3.0A Rectifier 30pcs single
24141 СНГ
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
Diodes silicon D103A, point, universal. Designed to work in TV video channels, in AGC systems and discriminators of FM and AM receivers. 0.4 DIP D104 30V 30mA High frequency 200pcs single
24270 СНГ
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
Microalloy, silicon, universal. Designed for use in AGC systems, discriminators, video amplifiers. 0.3 DIP D104 30V 30mA Rectifier 100 pieces. single
24275 СНГ
2 грн.
50+1,80 грн.
200+1,60 грн.
500+1,40 грн.
Designed for use as switching elements in high-speed impulse devices of the nanosecond range. Are issued in the glass case with flexible conclusions. 0.25 DIP КД-121 30V 20mA Pulse 100 pieces. single
24452 СНГ
25 грн.
50+22,50 грн.
200+20 грн.
500+17,50 грн.
Diodes D214 silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. 13 Screw КДЮ-11 100V 10A Rectifier 40pcs single
24602 СНГ
35 грн.
50+31,50 грн.
200+28 грн.
500+24,50 грн.
The main technical characteristics of the diode D232A: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 3000 µA at Uobr 400 V. 11 Screw КДЮ-11 400V 10A Rectifier 40pcs single
24605 СНГ
9 грн.
50+8,10 грн.
200+7,20 грн.
500+6,30 грн.
The main technical characteristics of the diode 2D202D: • Uobr and max - Maximum impulse reverse voltage: 200 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 µA at Uobr 200 V. 5 Screw КДЮ-11 200V 5A Rectifier 100 pieces. single
24152 ON SEMICONDUCTOR
40 грн.
100+36 грн.
200+32 грн.
500+28 грн.
6.5 DIP TO-247 200V 2x15A Fast 30pcs double common cathode
24151 ST MICROELECTRONICS
72 грн.
100+64,80 грн.
200+57,60 грн.
500+50,40 грн.
4.5 DIP TO-247 300V 2x15A Fast 30pcs double common cathode
24150 ON SEMICONDUCTOR
48 грн.
100+43,20 грн.
200+38,40 грн.
500+33,60 грн.
5 DIP TO247-2 1200V 30A Fast 30pcs single
24149 ST MICROELECTRONICS
120 грн.
100+108 грн.
200+96 грн.
500+84 грн.
5 DIP TO247-2 1200V 60A Fast 30pcs single
24089 FAIRCHILD SEMICONDUCTOR
54 грн.
100+48,60 грн.
200+43,20 грн.
500+37,80 грн.
5 DIP TO-3P 300V 2x30A Fast 30pcs double common cathode
24090 FAIRCHILD SEMICONDUCTOR
48 грн.
100+43,20 грн.
200+38,40 грн.
500+33,60 грн.
5 DIP TO-3P 600V 2x15A Fast 30pcs double common cathode
24991 HKZ
16 грн.
100+14,40 грн.
200+12,80 грн.
500+11,20 грн.
TO220-2pin(16A; 600V; 35ns). 2.5 DIP TO-220 600V 16A Fast 50pcs single
24994 MIC
1 грн.
100+0,90 грн.
200+0,80 грн.
500+0,70 грн.
0.3 DIP DO-15 600V 2A Fast 500pcs single
25119 Nihon
1 грн.
100+0,90 грн.
200+0,80 грн.
500+0,70 грн.
0.25 SMD SMA 40V 1A Schottky 2000pcs single
25133 СНГ
40 грн.
50+36 грн.
200+32 грн.
500+28 грн.
Microwave diode D605 silicon, point, detector. It is intended for detection of pulsed amplitude-modulated signals, indication of pulsed power in the wave range 3.2..10cm. 2.5 DIP Microwave 10 pieces. single
25134 СНГ
35 грн.
50+31,50 грн.
200+28 грн.
500+24,50 грн.
Diode D408 silicon point mixing. Designed for use in frequency converters in the wavelength range of 4.5..10 s. 2.5 DIP Microwave 10 pieces. single