Active radio components

Results: 8086

	MPN	Article	Brand	In stock	Price	Discounts	Quantity	Description	Weight g.	Transistor case type	Transistor type	Mounting type	Type of shell	Urev. max, V	Ipr. max.	Ipr. imp. max.	Diode type	Structure	Drain-source voltage	Drain current	Power	Factory packaging	Collector-emitter voltage	Collector current	Frequency	Current gain	Stabilization voltage	Zener diode housing type	Diode design

Zener diode KS680A

#3405

23307

СНГ

—

8 грн.

50+	7,20 грн.
100+	6,40 грн.
250+	6 грн.

—

Medium power silicon zener diode, 180V The main technical parameters of the KS680A zener diode: • Rated stabilization voltage: 180 V at Ist 25 mA; • Stabilization voltage spread: 162... 198 V; • Temperature coefficient of stabilization voltage: ±0.2%/°С; • Zener diode differential resistance: 330 Ohm at Ist 30 mA; • The minimum allowable stabilization current: 2.5 mA; • Maximum allowable stabilization current: 28 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +125 °С

1.5

—

Screw

—

5Вт

100 pieces.

—

180V

ks620

—

Diode KD106A

#3410

28429

СНГ

—

5 грн.

50+	4,50 грн.
200+	4 грн.
500+	3,50 грн.

—

Max. allowable reverse voltage, V: 100 Maximum direct forward current, mA: 300 Maximum operating frequency, kHz: 1 Recovery time, ms: 0.385

0.4

—

DIP

—

100V

300mA

—

Rectifier

—

200pcs

—

single

Diode 2D212A (=KD212A)

#3411

22958

СНГ

—

15 грн.

50+	13,50 грн.
200+	12 грн.
500+	10,50 грн.

—

• Uopp max - Maximum direct reverse voltage: 200 V; • Inp max - Maximum forward current: 1 A; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 1 A; • Iobr - Constant reverse current: no more than 50 μA at Uobr 200 V; • tvoc arr - Reverse recovery time: 0.3 µs; • Sd - Total capacitance: 45 pF at Uobr 100 V

1.5

—

КД-16

200V

—

Rectifier

—

200pcs

—

single

TS122-25-4

#3412

—

160 грн.

10+	144 грн.
50+	128 грн.

—

92 г.

—

DF04M (TSC)

#3418

—

6 грн.

10+	5,40 грн.
50+	4,80 грн.
100+	4,50 грн.

—

Корпус: DB-1 (DIL (8.3x6.4)), DIP Uобр: 400 I пр: 1 Мост однофазный

—

Diode Bridge DF04S

#3419

20557

FAIRCHILD SEMICONDUCTOR

—

5 грн.

10+	4,50 грн.
50+	4 грн.
100+	3,75 грн.

—

SMD

—

400V

1.5A

50A

Rectifier

—

1000pcs

—

Diode bridge DF01S

#3420

24947

FAIRCHILD SEMICONDUCTOR

—

3 грн.

10+	2,70 грн.
50+	2,40 грн.
100+	2,25 грн.

—

SMD

—

100V

1.5A

—

1000pcs

—

DF08S

#3421

—

6.40 грн.

10+	5,76 грн.
50+	5,12 грн.
100+	4,80 грн.

—

Корпус: DBS (DB-1S, SO-DIL), SMD Uобр: 800 I пр: 1,5 Мост однофазный

—

DF10M

#3422

—

3 грн.

10+	2,70 грн.
50+	2,40 грн.
100+	2,25 грн.

—

Корпус: DB-1 (DIL (8.3x6.4)), DIP Uобр: 1000 I пр: 1 Мост однофазный

—

DF10S

#3423

—

3 грн.

10+	2,70 грн.
50+	2,40 грн.
100+	2,25 грн.

—

Корпус: DBS (DB-1S, SO-DIL), SMD Uобр: 1000 I пр: 1 Мост однофазный

—

DF1510S

#3424

—

3 грн.

10+	2,70 грн.
50+	2,40 грн.
100+	2,25 грн.

—

Корпус: DBS (DB-1S, SO-DIL), SMD Uобр: 1000 I пр: 1,5 Мост однофазный

—

GBJ1010

#3425

—

10 грн.

10+	9 грн.
50+	8 грн.
100+	7,50 грн.

—

Корпус: GBJ Uобр: 1000 I пр: 10 Мост однофазный

—

Diode Bridge GBJ1510

#3426

21628

SEP

—

14 грн.

10+	12,60 грн.
50+	11,20 грн.
100+	10,50 грн.

—

3.7

—

DIP

GBJ

1000V

15A

—

Rectifier

—

250pcs

—

GBJ2010

#3427

—

12 грн.

10+	10,80 грн.
50+	9,60 грн.
100+	9 грн.

—

Корпус: GBJ Uобр: 1000 I пр: 20 Мост однофазный

—

GBJ610

#3428

—

10 грн.

10+	9 грн.
50+	8 грн.
100+	7,50 грн.

—

Корпус: GBJ Uобр: 1000 I пр: 6 Мост однофазный

—

GBJ810

#3429

—

10.40 грн.

10+	9,36 грн.
50+	8,32 грн.
100+	7,80 грн.

—

Корпус: GBJ Uобр: 1000 I пр: 8 Мост однофазный

—

GBL10

#3430

—

7.80 грн.

10+	7,02 грн.
50+	6,24 грн.
100+	5,85 грн.

—

Корпус: GBL Uобр: 1000 I пр: 4 Мост однофазный

—

Transistor KP103E

#3433

—

СНГ

—

12 грн.

10+	11,40 грн.
50+	10,80 грн.
100+	9,60 грн.

—

P-FET Structure Maximum drain-source voltage Usi, V 10 Maximum gate-source voltage Uzi max., V 10 Maximum dissipated power Psi max., W 0.007 Slope of characteristic S, mA/V 0.4…2.4 Housing KT-17

0.7

—

Field

DIP

—

125мВт

200pcs

—

Transistor KT3107I

#3434

23590

СНГ

—

3 грн.

10+	2,85 грн.
50+	2,70 грн.
100+	2,40 грн.

—

0.3

TO92

Bipolar

DIP

—

PNP

—

300мВт

1000pcs

50В

200мА

200МГц

450

—

Transistor GT905A

#3435

22330

СНГ

—

16 грн.

10+	15,20 грн.
50+	14,40 грн.
100+	12,80 грн.

—

Transistors GT905A germanium diffusion-alloy structures pnp universal. Designed for use in switching and pulse amplifying devices, in the output stages of low-frequency power amplifiers.

—

Bipolar

DIP

—

PNP

—

6Вт

50pcs

65В

7А

30МГц

100

—

Transistor KT315B

#3437

23553

СНГ

—

2 грн.

10+	1,90 грн.
50+	1,80 грн.
100+	1,60 грн.

—

Transistors silicon epitaxial-planar structures npn amplifying. Designed for use in high, intermediate and low frequency amplifiers.

0.25

КТ-13

Bipolar

DIP

—

NPN

—

150мВт

800 pcs.

20В

100мА

250МГц

350

—

Transistor P416B

#3438

23029

СНГ

—

10 грн.

10+	9,50 грн.
50+	9 грн.
100+	8 грн.

—

Transistor P416B germanium alloy pnp universal. Designed for use in amplifying and generator cascades in the range from long to short and ultrashort waves, as well as in pulse cascades of radio electronic devices.

1.8

КТЮ-3-3

Bipolar

DIP

—

PNP

—

100мВт

100 pieces.

12В

25мА

80МГц

200

—

Transistor MP42B

#3439

25861

СНГ

—

7 грн.

10+	6,65 грн.
50+	6,30 грн.
100+	5,60 грн.

—

PNP structure Max. e.g. k-b at a given reverse current to and open circuit e. (Ukbo max), V 15 Max. e.g. k-e at a given current to and a given resist. in the circuit b-e. (Uker max), V 15 The maximum allowable current to (Ik max, A) 0.2 Static current transfer coefficient h21e min 45…100 Limiting frequency of the current transfer coefficient fgr, MHz 1 Maximum dissipated power k (Pk, W) 0.2

1.6

КТЮ-3-6

Bipolar

DIP

—

PNP

—

200мВт

100 pieces.

15В

200мА

1МГц

100

—

2T603B nickel

#3442

—

4 грн.

10+	3,80 грн.
50+	3,60 грн.
100+	3,20 грн.

—

77,79 г.

—

Transistor MP15A

#3443

23011

СНГ

—

6 грн.

10+	5,70 грн.
50+	5,40 грн.
100+	4,80 грн.

—

Transistor MP15A germanium alloyed pnp universal low-frequency low-power. Designed for small low frequency signal amplification, amplification, switching, pulse shaping

1.8

КТЮ-3-3

Bipolar

DIP

—

PNP

—

150мВт

100 pieces.

15В

20мА

2МГц

100

—

Transistor MP41

#3444

24617

СНГ

—

6 грн.

10+	5,70 грн.
50+	5,40 грн.
100+	4,80 грн.

—

Transistor MP41 germanium alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals.

1.8

КТЮ-3-3

Bipolar

DIP

—

PNP

—

150мВт

100 pieces.

15В

30мА

1МГц

—

Transistor KT808AM

#3445

26623

СНГ

—

45 грн.

10+	42,75 грн.
50+	40,50 грн.
100+	36 грн.

—

Transistors KT808AM silicon mezaplanar structures npn high-voltage, switching. Designed for use in switching devices, horizontal scanning generators, electronic voltage regulators.

TO3

Bipolar

DIP

—

NPN

—

70Вт

20pcs

130В

10А

8МГц

125

—

Transistor KP327B (=BF961)

#3463

23004

СНГ

—

8 грн.

10+	7,60 грн.
50+	7,20 грн.
100+	6,40 грн.

—

KP327B silicon planar transistor with two insulated gates protected by diodes and an n-type channel

0.3

КТ-29

Field

SMD

—

MOS n-channel

14В

30мА

200мВт

100 pieces.

—

2P903A

#3464

—

30 грн.

10+	28,50 грн.
50+	27 грн.
100+	24 грн.

—

89,90 г.

—

2P903V OS

#3465

—

30 грн.

10+	28,50 грн.
50+	27 грн.
100+	24 грн.

—

87 г.

—