Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Diode design |
|---|
Diode bridge KTS403D
#14363
|
26575 | СНГ | 1 шт |
25 грн.
|
Assembly of two single-phase diode bridges. Designed for rectifying alternating current with a frequency of up to 5 kHz. | 11 | — | — | — | DIP | — | 200V | 1A | — | — | Diode bridge | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||||
Transistor KT837B
#14410
|
26618 | INTEGRAL | 1 шт |
12 грн.
|
|
Transistors silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. | 2.5 | — | TO220 | Bipolar | DIP | — | — | — | — | — | — | PNP | 30Вт | 100 pieces. | 70В | 7,5A | 1МГц | 80 | — | — | — | ||||||||
Transistor P304M
#14411
|
26619 | СНГ | 1 шт |
13 грн.
|
|
Transistors P304M silicon alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. | 2.5 | — | TO220 | Bipolar | DIP | — | — | — | — | — | — | PNP | 10Вт | 20pcs | 50В | 500мА | 0,05МГц | — | — | — | — | ||||||||
Chip A3520D (=K174XA16)
#14448
|
26660 | ALPHA OMEGA SEMICONDUCTOR | 1 шт |
14 грн.
|
|
SECAM color information decoder IC. | 4 | DIP28 | — | — | DIP | — | — | — | — | TV | — | — | — | 10 pieces. | — | — | — | — | — | — | — | ||||||||
Chip TDA4555 (=174x32)
#14487
|
26701 | СНГ | 1 шт |
30 грн.
|
|
The TDA4555 chip is a multi-standard color difference decoder. Designed to work in the color block in color TVs of the fourth and fifth generations as a color processor. Provides decoding of color information systems PAL, SECAM, NTSC (3.58 MHz), NTSC (4.43 MHz). Carries out the identification of standards with automatic switching to the accepted standard. | 4 | DIP28 | — | — | DIP | — | — | — | — | TV | — | — | — | 36pcs | — | — | — | — | — | — | — | ||||||||
Chip K1102AP16
#14709
|
26927 | СНГ | 1 шт |
8 грн.
|
|
Dual high-speed pulse shaper with direct and inverse output. | 0.5 | DIP8 | — | — | DIP | — | — | — | — | Logics | — | — | — | 200pcs | — | — | — | — | — | — | — | ||||||||
Transistor KT837V
#15470
|
27709 | INTEGRAL | 1 шт |
12 грн.
|
|
Transistors silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. | 2.5 | — | TO220 | Bipolar | DIP | — | — | — | — | — | — | PNP | 30Вт | 100 pieces. | 70В | 7,5A | 1МГц | 150 | — | — | — | ||||||||
Zener diode D811
#15478
|
27718 | СНГ | 1 шт |
3 грн.
|
|
Zener diodes D811 silicon, alloy, medium power. Designed to stabilize the voltage of 10.0-12.0 V in the stabilization current range of 3...33 mA. | 0.8 | — | — | — | DIP | — | — | — | — | — | — | — | 300мВт | 100 pieces. | — | — | — | — | 11V | kd-8 | — | ||||||||
Diode D214A
#15913
|
28147 | СНГ | 1 шт |
25 грн.
|
|
D214A silicon diffusion diodes. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. | 13 | — | — | — | Screw | КДЮ-11 | 100V | 10A | — | — | Rectifier | — | — | 40pcs | — | — | — | — | — | — | single | ||||||||
Diode 1N5406
#16089
|
28329 | MIC | 1 шт |
3 грн.
|
|
1 | — | — | — | DIP | DO-201AD | 600V | 3.0A | — | — | Rectifier | — | — | 500pcs | — | — | — | — | — | — | — | |||||||||
Thyristor KU201E
#16145
|
28385 | СНГ | 1 шт |
10 грн.
|
The main technical parameters of the thyristor KU201E: • Maximum DC reverse voltage: 100 V; • Maximum DC voltage in closed state: 100 V; • Maximum repetitive pulse current in the open state: 30 A; • Repetitive pulse current in the open state: 2 A; • Open state voltage: 2 V; • Direct current in the closed state: no more than 5 mA; • Constant reverse current: no more than 5 mA; • Unlocking direct control current: no more than 100 mA; • Constant unlocking control voltage: no more than 6 V; • Voltage slew rate in closed state: 5 V/µs; • Turn-on time: no more than 10 microseconds; • Turn-off time: no more than 100 microseconds; • Ambient temperature operating range: -60... +125 °С | 11 | — | — | — | Screw | — | 100V | — | 30A | — | — | — | — | 40pcs | — | — | — | — | — | — | — | |||||||||
Diode D103
#16151
|
28394 | СНГ | 1 шт |
3 грн.
|
|
Diodes silicon D103, point, universal. Designed to work in TV video channels, in AGC systems and discriminators of FM and AM receivers. | 0.4 | — | — | — | DIP | D104 | 30V | 30mA | — | — | High frequency | — | — | 200pcs | — | — | — | — | — | — | single | ||||||||
Diode 2D201B (=KD201B)
#16188
|
28433 | СНГ | 1 шт |
30 грн.
|
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The main technical characteristics of the diode 2D201B: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 10 A; • Inp and max - Maximum pulse forward current: 15 A; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • fmax - Maximum operating frequency of the diode: 1 kHz. | 13 | — | — | — | Screw | КДЮ-11 | 100V | 10A | 15A | — | Rectifier | — | — | 40pcs | — | — | — | — | — | — | single | ||||||||
Avalanche diode DL112-16-10
#16203
|
28449 | СНГ | 1 шт |
60 грн.
|
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6 | — | — | — | Cooler | — | 1000V | 16A | — | — | Avalanche | — | — | — | — | — | — | — | — | — | — | |||||||||
Diode D226G
#16207
|
28423 | СНГ | 1 шт |
4 грн.
|
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The main technical characteristics of the diode D226G: • Uopp max - Maximum direct reverse voltage: 200 V; • Inp max - Maximum forward current: 300 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 300 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 200 V. | 2 | — | — | — | DIP | КД-8 | 200V | 300mA | — | — | Rectifier | — | — | 200pcs | — | — | — | — | — | — | single | ||||||||
Zener diode 2S456A
#16531
|
28779 | СНГ | 1 шт |
15 грн.
|
|
Main technical parameters of the zener diode 2S456A: • Rated stabilization voltage: 5.6 V at Ist 36 mA; • Stabilization voltage spread: 5.04... 6.16 V; • Temperature coefficient of stabilization voltage: 0...+0.05%/°C; • Differential resistance of the zener diode: 10 Ohm at Ist 30 mA; • Minimum permissible stabilization current: 3 mA; • Maximum permissible stabilization current: 167 mA; • Maximum permissible power dissipation on the zener diode: 1 W; • Operating range of ambient temperature: -60... +100 °C. | 0.8 | — | — | — | DIP | — | — | — | — | — | — | — | 1Вт | 100 pieces. | — | — | — | — | 5V6 | kd-8 | — | ||||||||
Microcircuit SN74HC00N
#16666
|
28905 | PHILIPS | 1 шт |
19 грн.
|
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1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 25pcs | — | — | — | — | — | — | — | |||||||||
| 29168 | СНГ | 1 шт |
25 грн.
|
|
Transistor 1T403Zh germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, converters and DC stabilizers. | 3 | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 4Вт | 100 pieces. | 60В | 1,25А | — | 60 | — | — | — | |||||||||
Transistor P217B
#16931
|
29178 | СНГ | 1 шт |
20 грн.
|
|
Main technical characteristics of the P217B transistor: • Transistor structure: pnp • Рк t max - Continuous dissipated power of the collector with heat sink: 30 W; • fh21э - Limit frequency of the transistor current transfer coefficient for circuits with a common emitter: not less than 0.2 MHz; • Uкбо проб - Collector-base breakdown voltage at a given collector reverse current and open emitter circuit: 60 V; • Uebo prob - Breakdown voltage emitter-base at a given reverse emitter current and open collector circuit: 15 V; • Iк max - Maximum permissible direct collector current: 7.5 A; • Iкбо - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 0.5 mA; • h21э - Static current transfer coefficient of the transistor in small signal mode for circuits with a common emitter: more than 20; • Rke nat - Saturation resistance between collector and emitter: no more than 0.5 Ohm. | 11 | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 30Вт | 40pcs | 60В | 7,5A | 0,1МГц | — | — | — | — | ||||||||
Diode KD202B
#17108
|
29357 | СНГ | 1 шт |
7 грн.
|
|
KD202B silicon diffusion diodes. Designed to convert alternating voltage with a frequency of up to 5 kHz. Available in a glass-metal case with rigid leads. The diode type and the connection diagram of the electrodes with the leads are shown on the case. Main technical characteristics of the KD202B diode: • uobr and max - Maximum pulse reverse voltage: 50 V; • inp max - Maximum forward current: 5 A; • fd - Diode operating frequency: 1.2 kHz; • unp - Constant forward voltage: no more than 0.9 V at inp 5 A; • iobrp - Constant reverse current: no more than 800 µA at uobr 100 V | 5.2 | — | — | — | Screw | КД-11 | 50V | 5A | — | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | single | ||||||||
Chip 148UN1
#17241
|
29494 | СНГ | 1 шт |
150 грн.
|
|
The 148UN1 microcircuit is a low-frequency power amplifier with an output power of 1 W at a load resistance of 30 ohms. | 14 | 311.8-2 | — | — | DIP | — | — | — | — | Amplifiers | — | — | — | 6pcs | — | — | — | — | — | — | — | ||||||||
Radio tube 6F4P
#672
|
— | — | — |
20 грн.
|
|
— | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||
Chip K237XA2
#678
|
22953 | СНГ | — |
6 грн.
|
|
— | IF amplifier with detector and AGC | 2 | — | — | — | DIP | — | — | — | — | radio reception | — | — | — | 50pcs | — | — | — | — | — | — | — | |||||||
Transistor KT3102EM
#679
|
— | СНГ | — |
3 грн.
|
|
— | 0.3 | — | TO92 | Bipolar | DIP | — | — | — | — | — | — | NPN | 250мВт | 1000pcs | 20В | 200мА | — | 1000 | — | — | — | ||||||||
Chip K157XA2
#681
|
21995 | СНГ | — |
20 грн.
|
|
— | IF amplifier with AGC. | 1 | DIP14 | — | — | DIP | — | — | — | — | Amplifiers | — | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||
Chip K157UL1A
#682
|
25890 | СНГ | — |
20 грн.
|
|
— | K157UL1A microcircuits are two-channel low-noise playback amplifiers for stereo tape recorders. The IC includes: input stage, intermediate stages of the main amplification, output stages, mode stabilizers. | 1 | DIP14 | — | — | DIP | — | — | — | — | Amplifiers | — | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||
Chip K157UL1B
#683
|
25942 | СНГ | — |
10 грн.
|
|
— | K157UL1A microcircuits are two-channel low-noise playback amplifiers for stereo tape recorders. The IC includes: input stage, intermediate stages of the main amplification, output stages, mode stabilizers. | 1 | DIP14 | — | — | DIP | — | — | — | — | Amplifiers | — | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||
K157DA1
#684
|
000081 | — | — |
6 грн.
|
|
— | K157DA1 microcircuits are a two-channel full-wave amplitude detector for controlling devices for indicating the average levels of recorded signals in stereo tape recorders. Each channel contains a buffer amplifier with a voltage gain of 7...10, a bipolar to unipolar signal converter, and an operating mode stabilizer. The output voltages of each channel have a positive polarity and correspond to the average rectified values of the input signals in the range above 50 dB. Contains 62 integral elements. Case K157DA1 type 201.14-1, weight no more than 1.5 g. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||
Chip K157HP1
#685
|
21994 | СНГ | — |
8 грн.
|
|
— | K157KhP1 microcircuits are a two-channel threshold circuit, each channel of which includes a preamplifier with an amplitude discriminator at the input and an indicator amplifier, which includes a time interval shaper and a power amplifier. These channels have in common a mode device that sets the reference and bias voltages for both amplifiers, and a rectifier of the automatic recording level control system that processes the sum of the signals of the two channels. Designed to control devices for indicating peak signal levels (LEDs, incandescent lamps) in the recording channel and to generate control signals for the automatic recording level control system. Contains 89 integral elements. | 1 | DIP14 | — | — | DIP | — | — | — | — | Amplifiers | — | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||
Chip K157HP2
#686
|
25941 | СНГ | — |
10 грн.
|
|
— | The K157XP2 microcircuits are an electronically controlled voltage stabilizer. It is intended for the construction of generators of erasure and bias currents (GSP), voltage stabilizers of a key type. | 1 | DIP14 | — | — | DIP | — | — | — | — | Generators | — | — | — | 100 pieces. | — | — | — | — | — | — | — |
