Diodes domestic
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Brand «СНГ»
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Pin type | Working voltage, V | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Diode type | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Capacity | Accuracy | Stabilization voltage | Zener diode housing type | Number of windings | Polarization | Winding resistance, Ohm | Operating current no more | Maximum switching voltage | Winding supply current | Plug or socket | Number of contacts | Mechanical installation | Type | Contact set | Diode design |
|---|
Diode D2D
#13959
|
26139 | СНГ | — |
3 грн.
|
|
— | Diodes D2D germanium, point. Designed to convert and detect signals with a frequency of up to 150 MHz in amplitude and phase detectors, as video detectors and DC component restorers in televisions, in ring modulators and frequency converters, in counting circuits and in low-power rectifiers. The main technical characteristics of the diode D2D: • Uopp max - Maximum direct reverse voltage: 50 V; • Inp max - Maximum forward current: 16 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 4.5 mA; • Iobr - Constant reverse current: no more than 250 μA at Uobr 50 V; • tvoc arr - Reverse recovery time: 3 µs; • Sd - Total capacitance: 0.2 pF at Uobr 1.5 V. | 0.7 | — | — | — | — | DIP | КД-4 | 50V | 16mA | — | Detector | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | single | |||||||||
Diode D2G
#13958
|
26138 | СНГ | — |
3 грн.
|
|
— | Diodes D2G germanium, point. Designed to convert and detect signals with a frequency of up to 150 MHz in amplitude and phase detectors, as video detectors and DC component restorers in televisions, in ring modulators and frequency converters, in counting circuits and in low-power rectifiers. The main technical characteristics of the diode D2G: • Uopp max - Maximum direct reverse voltage: 50 V; • Inp max - Maximum forward current: 16 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 2 mA; • Iobr - Constant reverse current: no more than 250 μA at Uobr 50 V; • tvoc arr - Reverse recovery time: 3 µs; • Sd - Total capacitance: 0.2 pF at Uobr 1.5 V. | 0.7 | — | — | — | — | DIP | КД-4 | 50V | 16mA | — | Detector | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | single | |||||||||
Diode D2V
#13957
|
26137 | СНГ | — |
3 грн.
|
|
— | Diodes D2V germanium, point. Designed to convert and detect signals with a frequency of up to 150 MHz in amplitude and phase detectors, as video detectors and DC component restorers in televisions, in ring modulators and frequency converters, in counting circuits and in low-power rectifiers. The main technical characteristics of the diode D2V: • Uopp max - Maximum direct reverse voltage: 30 V; • Inp max - Maximum forward current: 25 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 9 mA; • Iobr - Constant reverse current: no more than 250 µA at Uobr 30 V; • tvoc arr - Reverse recovery time: 3 µs; • Sd - Total capacitance: 0.2 pF at Uobr 1.5 V. | 0.7 | — | — | — | — | DIP | КД-4 | 30V | 25mA | — | Detector | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | single | |||||||||
Varicap KV105B
#13953
|
26133 | СНГ | — |
10 грн.
|
— | 1.8 | — | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
Diode bridge KTS407A
#13951
|
26131 | СНГ | — |
30 грн.
|
— | KTS407A A block of silicon, mesadiffusion diodes connected in a bridge circuit. Available in a plastic case with flexible leads. The main technical characteristics of the diode KTS407A: • Uobr and max - Maximum impulse reverse voltage: 400 V; • Inp max - Maximum forward current: 500 mA; • Inp and max - Maximum pulse forward current: 3 A; • fd - Operating frequency of the diode: 20 kHz; • Iobr - Constant reverse current: no more than 5 μA at Uobr 400 V; • tvoc - Reverse recovery time: 5 µs. | 0.5 | — | — | — | — | DIP | — | 400V | 500mA | 3A | Diode bridge | — | — | — | — | 500pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Diode D7Zh
#13950
|
26130 | СНГ | — |
9 грн.
|
|
— | Diodes germanium D7Zh, alloy. The main technical characteristics of the D7Zh diode: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 300 mA; • fd - Operating frequency of the diode: 2.4 kHz; • Unp - DC forward voltage: no more than 0.5 V at Inp 300 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 400 V. | 1.6 | — | — | — | — | DIP | КД-8 | 300V | 300mA | — | Rectifier | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | single | |||||||||
Transistor KT837K
#13948
|
26127 | СНГ | — |
12 грн.
|
|
— | Transistors KT837K silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. The main technical characteristics of the transistor KT837K: • Transistor structure: pnp; • Рк t max - Constant power dissipation of the collector with a heat sink: 30 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 1 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 45 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 7.5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.15 mA; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 50... 150; • Rke us - Saturation resistance between collector and emitter: no more than 0.25 Ohm. | 2 | — | — | TO220 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | — | 200pcs | 40В | 7,5A | 1МГц | 150 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Zener diode 2S530A (=KS530A)
#13947
|
26126 | СНГ | — |
10 грн.
|
|
— | Zener diodes 2S530A silicon, planar, medium power. Designed to stabilize the rated voltage of 30 V in the stabilization current range of 1...27 mA. The main technical parameters of the zener diode 2S530A: • Rated stabilization voltage: 30 V at Ist 5 mA; • Stabilization voltage spread: 28.5... 31.5 V; • Temperature coefficient of stabilization voltage: ±0.1%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 200 Ohm at Ist 1 mA; • Minimum allowable stabilization current: 1 mA; • Maximum allowable stabilization current: 27 mA; • Maximum allowable dissipated power on the zener diode: 1 W; • Working range of ambient temperature: -60... +125 °С. | 0.8 | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 1Вт | 100 pieces. | — | — | — | — | — | — | 30V | kd-8 | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Zener diode D814B
#13946
|
26125 | СНГ | — |
3 грн.
|
|
— | Zener diodes D814B silicon, alloy, medium power. Designed to stabilize the voltage of 8.0-9.5 V in the stabilization current range of 3...36 mA. | 0.8 | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 340мВт | 100 pieces. | — | — | — | — | — | — | 9V | kd-8 | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Zener diode D818G
#13945
|
26124 | СНГ | — |
12 грн.
|
|
— | Zener diodes D818G silicon, diffusion-alloy, low power, precision. Designed to stabilize the nominal voltage of 9 V in the stabilization current range of 3...33 mA with high requirements for voltage stability in the temperature range of -60...+125 °C. The main technical parameters of the Zener diode D818G: • Rated stabilization voltage: 9 V at Ist 10 mA; • Stabilization voltage spread: 7.6... 10 V; • Temperature coefficient of stabilization voltage: +0.006%/°С; • Temporary stabilization voltage instability: ± 0.12%; • Zener diode differential resistance: 18 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Working range of ambient temperature: -60... +125 °С. | 0.8 | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 300мВт | 100 pieces. | — | — | — | — | — | — | 9V | kd-8 | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Zener diode KS168A
#13943
|
26122 | СНГ | — |
3 грн.
|
|
— | Zener diodes KS168A silicon, alloy, low power. Designed to stabilize the nominal voltage of 6.8 V in the stabilization current range of 3...45 mA. The main technical parameters of the KS168A zener diode: • Rated stabilization voltage: 6.8 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: ±0.06%/°С; • Constant forward voltage: 1 V at Ipr 50 mA; • Zener diode differential resistance: 28 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 45 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Working range of ambient temperature: -60... +125 °С. | 0.8 | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 300мВт | 100 pieces. | — | — | — | — | — | — | 6V8 | kd-8 | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Zener diode KS119A
#13942
|
26121 | СНГ | — |
12 грн.
|
|
— | Stabistors KS119A silicon, diffusion-alloy, low power. Designed for use in voltage stabilizers and as thermal compensating elements. The main technical parameters of the stabistor KS119A: • Rated stabilization voltage: 1.9 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: -0.4%/°С; • Differential resistance: 15 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 1 mA; • The maximum allowable stabilization current: 100 mA; • Maximum allowable power dissipation: 0.18 W; • Working range of ambient temperature: -60... +125 °С. | 0.8 | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 180мВт | 100 pieces. | — | — | — | — | — | — | 1V9 | kd-8 | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Zener diode KS191F
#13941
|
26120 | СНГ | — |
40 грн.
|
|
— | Zener diodes KS191F silicon, epitaxial, low power, precision, class 0.02. Designed to stabilize the nominal voltage of 9.1 V in the stabilization current range of 3...20 mA with high requirements for voltage stability in the temperature range of -60...+100 °C in digital measuring instruments and other precision equipment. The main technical parameters of the KS191F zener diode: • Rated stabilization voltage: 9.1 V at Ist 10 mA; • Stabilization voltage spread: 8.65... 9.55 V; • Temperature coefficient of stabilization voltage: ±0.0005%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±0.02%; • Zener diode differential resistance: 18 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 20 mA; • Maximum allowable power dissipation on the zener diode: 0.2 W; • Working range of ambient temperature: -60... +100 °С. | 0.7 | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 200мВт | 100 pieces. | — | — | — | — | — | — | 9V1 | kd-8 | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Zener diode KS191A
#13939
|
26118 | СНГ | — |
3 грн.
|
|
— | Zener diodes KS191A silicon, alloy, two-anode, low power. Designed to stabilize the nominal voltage of 9.1 V in the stabilization current range of 3...15 mA and to limit the voltage on both sides. The main technical parameters of the KS191A zener diode: • Rated stabilization voltage: 9.1 V at Ist 5 mA; • Temperature coefficient of stabilization voltage: ±0.06%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 18 Ohm at Ist 5 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 15 mA; • Maximum allowable power dissipation on the zener diode: 0.15 W; • Working range of ambient temperature: -55... +100 °С. | 0.3 | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 150мВт | 200pcs | — | — | — | — | — | — | 9V1 | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Diode D245
#13938
|
26117 | СНГ | — |
35 грн.
|
|
— | Diodes D245 silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. The main technical characteristics of the diode D245: • Uopp max - Maximum direct reverse voltage: 300 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1.25 V at Inp 10 A; • Iobr - Constant reverse current: no more than 3000 μA at Uobr 300 V. | 13 | — | — | — | — | Screw | — | 300V | 10A | — | Rectifier | — | — | — | — | 40pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | single | |||||||||
Diode D246A
#13936
|
26115 | СНГ | — |
40 грн.
|
|
— | Diodes D246A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. The main technical characteristics of the D246A diode: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 3000 µA at Uobr 400 V. | 13 | — | — | — | — | DIP | — | 400V | 10A | — | Rectifier | — | — | — | — | 40pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | single | |||||||||
Diode D246B
#13935
|
26114 | СНГ | — |
30 грн.
|
|
— | Diodes D246B silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. The main technical characteristics of the diode D246B: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1.5 V at Inp 5 A; • Iobr - Constant reverse current: no more than 3000 µA at Uobr 400 V. | 13 | — | — | — | — | Screw | — | 400V | 5A | — | Rectifier | — | — | — | — | 40pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | single | |||||||||
Diode D245A
#13934
|
26113 | СНГ | — |
35 грн.
|
|
— | Diodes D245A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. The main technical characteristics of the D245A diode: • Uopp max - Maximum direct reverse voltage: 300 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 3000 μA at Uobr 300 V. | 13 | — | — | — | — | Screw | — | 300V | 10A | — | Rectifier | — | — | — | — | 40pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | single | |||||||||
Transistor KP302BM Au
#13932
|
26111 | СНГ | — |
24 грн.
|
|
— | KP302BM silicon planar field transistor with a gate based on pn junction and n-type channel. Designed for use in broadband amplifiers in the frequency range up to 150 MHz, as well as in switching and switching devices. | 0.4 | — | — | КТ-1 | Field | DIP | — | — | — | — | — | MOS p-channel | 20В | 40мА | 300мВт | 100 pieces. | — | — | 150МГц | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Diode KD203D
#13931
|
26110 | СНГ | — |
40 грн.
|
|
— | Diodes KD203D silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 5 kHz. The main technical characteristics of the diode 2D203D: • Uopp max - Maximum direct reverse voltage: 700 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 1500 μA at Uobr 1000 V. | 13 | — | — | — | — | Screw | — | 700V | 10A | — | Rectifier | — | — | — | — | 25pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | single | |||||||||
Diode KD411GM
#13926
|
26105 | СНГ | — |
3 грн.
|
|
— | Silicon diode, diffusion, high-speed. | 2 | — | — | — | — | DIP | КД-8 | 500V | 2A | — | Fast | — | — | — | — | 200pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | single | |||||||||
Transistor KT805BM
#13925
|
26104 | СНГ | — |
12 грн.
|
|
— | Transistors silicon epitaxial structures npn switching. Designed for use in line-scan output stages, ignition devices for internal combustion engines and other switching devices. | 2.5 | — | — | TO220 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 30Вт | 100 pieces. | 60В | 5А | 20МГц | 15 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Thyristor KU202L
#13924
|
26103 | СНГ | — |
25 грн.
|
— | Silicon thyristors KU202L are planar-diffusion, pnpn structures, triode, non-lockable. Designed for use as switching elements of voltage switching devices by small control signals. Are issued in the glass-to-metal case with rigid conclusions. | 11 | — | — | — | — | Screw | — | 300V | 10A | — | — | — | — | — | — | 40pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
| 26102 | СНГ | — |
8 грн.
|
— | K71-7 single-layer polystyrene metallized capacitors. Are issued in rectangular cases with wire conclusions. Designed for operation in circuits of direct, alternating, pulsating currents and in pulsed modes. | 4.2 | Flexible Leads | 250 | — | — | DIP | — | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | 50nF (0.05µF) | 1 % | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
Connector RP14A-30
#13920
|
26099 | СНГ | — |
150 грн.
|
|
— | The RP14A-30 low-frequency rectangular connector is designed to work in electrical circuits of direct, variable frequency up to 3 MHz and pulsed currents with a voltage of 800 V. RP14A connectors are manufactured in UHL and V climatic versions according to GOST 15150-69. Type of acceptance - 1,5,9. Specifications: BR0.364.024 TU (OTK), ESZ.656.015 TU (PZ). Connectors RP14A are used for outdoor installation. RP14A plugs and sockets are equipped with universal metal cases with locks and have straight and angled cable outlets. A sleeve is used to fasten the cable in the housing. Plugs and sockets have guide catchers. All-climate connectors with cable housings are manufactured in dust-splash-proof (with a sealing gasket) housings. Contacts of plugs and sockets are floating. Symbol structure: RP14A-30 RP - Type of connector: manual articulation (dismemberment) of general purpose, low-frequency, rectangular; 14 - Serial number of development; A - Constructive version with a unified casing; 30 - Number of contacts: 21, 30; Г - Type of contact: Ш - pin contact (plug); G - socket contact (socket); 6 - Casing type: - 3 - block part with instrument casing; - 4 - block part with a passage casing; - 6 - block part with a straight casing; - 7 - block part with an angular casing; - 8 - block part with a side casing; 5 - Contact coating: 5 - chemical oxide passive coating; no letter - silver | 37 | — | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 30pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | Socket | 30 | To the body | RP | — | — | |||||||||
Thermal relay TRT-115 7A
#13917
|
26096 | СНГ | — |
250 грн.
|
— | Thermal relays TRT-115 7A are designed to protect electrical equipment from overloads. | 380 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | 1 PC. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
| 26093 | СНГ | — |
1,000 грн.
|
— | 6P4.561.001-2 class 2 series 5, time relay. | 37 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | 1 PC. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
Explosion-proof lamp С-2В
#13913
|
26092 | СНГ | — |
300 грн.
|
— | Lamp explosion-proof С-2В blue glass, 12 V, 10 W. | 580 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | 1 PC. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Counter SVN-2-02 27V
#13911
|
26090 | СНГ | — |
550 грн.
|
— | Electronic digital operating time meters SVN-2-02 27V are designed to measure and digitally display the operating time of automotive and tractor and road construction equipment, various electrical installations for timely maintenance and monitoring of resource development. Time counting is performed in the presence of only alternating voltage at the additional input "C" (for example, alternating voltage of a generator or a speed sensor in a car), which makes it difficult for unauthorized "winding" of the operating time. | 90 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | 1 PC. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Relay RES8 RS4.590.062
#13910
|
26089 | СНГ | — |
145 грн.
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— | Relay RES-8 RS4.590.062 sealed, single-stable, with six changeover contacts, powered by direct current, designed for switching electrical circuits of direct and alternating current. Relay RES-8 complies with the requirements of GOST 16121-86 and specifications YAL0.455.014TU. Technical characteristics of the relay RES-8 RS4.590.062: • Supply current - constant; • Winding resistance, Ohm ...... 162-198; • Operate current, mA ...... 80; • Release current, mA ...... 15; • Operating voltage, V ...... 24-32; • Insulation resistance between current-carrying elements, between current-carrying elements and case, MOhm, not less than: - in normal climatic conditions (the winding is de-energized) ...... 200; - in conditions of high humidity ...... 20; - at maximum temperature (after holding the winding under operating voltage or current) ...... 50; • Test alternating voltage, V: - under normal climatic conditions: - between current-carrying elements and the body ...... 850; - between current-carrying elements ...... 750; - in conditions of high humidity: - between current-carrying elements and the body ...... 600; - between current-carrying elements ...... 450; - at reduced atmospheric pressure between current-carrying elements and the case, between current-carrying elements ...... 235. | 100 | — | 24…32 | — | — | DIP | — | — | — | — | — | — | — | — | — | 1 PC. | — | — | — | — | — | — | — | — | 1 | neutral | 178 | 80mA | 220v | Constant | — | — | — | — | 6 shifts | — |
