Diodes domestic
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Brand «СНГ»
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Pin type | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Resistance | Resistor power | Accuracy | Stabilization voltage | Zener diode housing type | Curve | Color | LED type | Diode design | LED purpose |
|---|
| 26285 | СНГ | — |
12 грн.
|
— | Silicone heat-conducting paste KPT-8 GOST 19783-74: 2015 | 10.5 | — | — | — | — | — | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Petal M4 brass
#14055
|
26234 | СНГ | — |
0.75 грн.
|
— | Petal unilateral brass with a tin covering under the M4 screw of GOST 22376-77. Overall length 18.5 mm. | 0.25 | — | — | — | — | Clamp | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
| 26230 | СНГ | — |
24 грн.
|
|
— | Resistors SP5-2M variable trimming wire for printed wiring. Square micro-turn (40 revolutions from minimum to maximum), with a circular movement of the movable contact system, produced by a worm pair. Are intended for work in chains of direct, alternating and impulse currents. | 2 | hard conclusions | — | — | — | DIP | — | — | — | — | — | — | — | — | 10 pieces. | — | — | — | — | 33 кОм | 1 W | 10 % | — | — | A | — | — | — | — | ||||||||
| 26220 | СНГ | — |
2 грн.
|
— | Bracket for mounting transistors T0-220. | 0.7 | — | — | — | — | Screw | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Chip KM555TM9
#14007
|
26186 | СНГ | — |
5 грн.
|
|
— | Six D flip-flops. | 1 | — | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||
LED AL307GM
#13974
|
26154 | СНГ | — |
2 грн.
|
|
— | Main technical parameters of LED AL307GM: • Color of radiation (glow): green; • Light intensity: not less than 1.5 cd/m2; • DC forward voltage: no more than 2 V; • Maximum spectral distribution: 0.567 µm; • Maximum allowable direct forward current: 22 mA; • Maximum pulse current at a given pulse duration: 60 mA; • The maximum allowable reverse DC voltage: 2.8 V; • The maximum allowable pulsed reverse DC voltage: 2.8 V | 0.3 | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 500pcs | — | — | — | — | — | — | — | — | — | — | Green | 5mm round | — | Indication | |||||||
LED AL336B
#13973
|
26153 | СНГ | — |
2 грн.
|
|
— | Light-emitting diodes AL336B, with scattered radiation, epitaxial. Limiting performance data: Constant reverse voltage ...... 2 V Continuous forward current ...... 20 mA Ambient temperature ...... -60..+70°С. | 0.4 | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 200pcs | — | — | — | — | — | — | — | — | — | — | Red | 5mm round | — | Indication | |||||||
LED AL310A
#13972
|
26152 | СНГ | — |
2 грн.
|
|
— | Diodes AL310A light-emitting, with scattered radiation, epitaxial. They are made on the basis of gallium-aluminum-arsenic compounds. Some electrical and lighting parameters of AL310A: Glow color - Red Light intensity at Ipr \u003d 10 mA - AL310A 0.61..1.2 mcd Wavelength of radiation at the maximum spectral density of 0.67 μm Constant forward voltage at Ipr=10 mA, not more than 2 V. Limiting performance data: DC forward current 12 mA Ambient temperature -60..+70°С. | 0.3 | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 200pcs | — | — | — | — | — | — | — | — | — | — | Red | 5mm round | — | Indication | |||||||
LED AL102VM
#13971
|
26151 | СНГ | — |
3 грн.
|
|
— | Main technical parameters of LED AL102VM: • Emission color: green; • Light intensity: not less than 0.45 cd/m2; • DC forward voltage: no more than 2.8 V; • Maximum spectral distribution: 0.56 µm; • Maximum allowable direct forward current: 22 mA; • Maximum pulse current at a given pulse duration: 60 mA at 2 ms; • The maximum allowable reverse DC voltage: 2 V; • The maximum allowable pulsed reverse DC voltage: 2 V. | 0.3 | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 200pcs | — | — | — | — | — | — | — | — | — | — | Green | 5mm round | — | Indication | |||||||
LED AL102BM
#13970
|
26150 | СНГ | — |
3 грн.
|
|
— | Main technical parameters of LED AL102BM: • Emission color: red; • Light intensity: not less than 0.2 cd/m2; • DC forward voltage: no more than 2.8 V; • Maximum spectral distribution: 0.69 µm; • Maximum allowable direct forward current: 20 mA; • Maximum pulse current at a given pulse duration: 60 mA at 2 ms; • The maximum allowable reverse DC voltage: 2 V; • The maximum allowable pulsed reverse DC voltage: 2 V. | 0.3 | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 200pcs | — | — | — | — | — | — | — | — | — | — | Red | 5mm round | — | Indication | |||||||
Zener diode KS515A
#13966
|
26146 | СНГ | — |
15 грн.
|
|
— | The main technical parameters of the KS515A zener diode: • Rated stabilization voltage: 15 V at Ist 5 mA; • Stabilization voltage spread: 13.5... 16.5 V; • Temperature coefficient of stabilization voltage: 0.1%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 200 Ohm at Ist 1 mA; • Minimum allowable stabilization current: 1 mA; • Maximum allowable stabilization current: 53 mA; • Maximum allowable dissipated power on the zener diode: 1 W; • Ambient temperature operating range: -60... +100 °С | 0.8 | — | — | — | — | DIP | — | — | — | — | — | — | — | 1Вт | 200pcs | — | — | — | — | — | — | — | 15V | kd-8 | — | — | — | — | — | |||||||
Zener diode KS133A met.
#13963
|
26143 | СНГ | — |
4 грн.
|
|
— | The main technical parameters of the KS133A zener diode: • Rated stabilization voltage: 3.3 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: -0.11%/°С; • Constant forward voltage: 1 V at Ipr 50 mA; • Zener diode differential resistance: 65 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 81 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Ambient temperature operating range: -60... +125 °С | 0.8 | — | — | — | — | DIP | — | — | — | — | — | — | — | 300мВт | 100 pieces. | — | — | — | — | — | — | — | 3V3 | kd-8 | — | — | — | — | — | |||||||
Diode D2I
#13962
|
26142 | СНГ | — |
3 грн.
|
|
— | Diodes D2I germanium, point. Designed to convert and detect signals with a frequency of up to 150 MHz in amplitude and phase detectors, as video detectors and DC component restorers in televisions, in ring modulators and frequency converters, in counting circuits and in low-power rectifiers. The main technical characteristics of the diode D2I: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 16 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 2 mA; • Iobr - Constant reverse current: no more than 250 µA at Uobr 100 V; • tvoc arr - Reverse recovery time: 3 µs; • Sd - Total capacitance: 0.2 pF at Uobr 1.5 V. | 0.7 | — | — | — | — | DIP | КД-4 | 100V | 16mA | — | — | Detector | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | single | — | |||||||
Diode D2E
#13960
|
26140 | СНГ | — |
3 грн.
|
|
— | Diodes D2E germanium, point. Designed to convert and detect signals with a frequency of up to 150 MHz in amplitude and phase detectors, as video detectors and DC component restorers in televisions, in ring modulators and frequency converters, in counting circuits and in low-power rectifiers. The main technical characteristics of the D2E diode: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 16 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 4.5 mA; • Iobr - Constant reverse current: no more than 250 µA at Uobr 100 V; • tvoc arr - Reverse recovery time: 3 µs; • Sd - Total capacitance: 0.2 pF at Uobr 1.5 V. | 0.7 | — | — | — | — | DIP | КД-4 | 100V | 16mA | — | — | Detector | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | single | — | |||||||
Diode D2D
#13959
|
26139 | СНГ | — |
3 грн.
|
|
— | Diodes D2D germanium, point. Designed to convert and detect signals with a frequency of up to 150 MHz in amplitude and phase detectors, as video detectors and DC component restorers in televisions, in ring modulators and frequency converters, in counting circuits and in low-power rectifiers. The main technical characteristics of the diode D2D: • Uopp max - Maximum direct reverse voltage: 50 V; • Inp max - Maximum forward current: 16 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 4.5 mA; • Iobr - Constant reverse current: no more than 250 μA at Uobr 50 V; • tvoc arr - Reverse recovery time: 3 µs; • Sd - Total capacitance: 0.2 pF at Uobr 1.5 V. | 0.7 | — | — | — | — | DIP | КД-4 | 50V | 16mA | — | — | Detector | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | single | — | |||||||
Diode D2G
#13958
|
26138 | СНГ | — |
3 грн.
|
|
— | Diodes D2G germanium, point. Designed to convert and detect signals with a frequency of up to 150 MHz in amplitude and phase detectors, as video detectors and DC component restorers in televisions, in ring modulators and frequency converters, in counting circuits and in low-power rectifiers. The main technical characteristics of the diode D2G: • Uopp max - Maximum direct reverse voltage: 50 V; • Inp max - Maximum forward current: 16 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 2 mA; • Iobr - Constant reverse current: no more than 250 μA at Uobr 50 V; • tvoc arr - Reverse recovery time: 3 µs; • Sd - Total capacitance: 0.2 pF at Uobr 1.5 V. | 0.7 | — | — | — | — | DIP | КД-4 | 50V | 16mA | — | — | Detector | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | single | — | |||||||
Diode D2V
#13957
|
26137 | СНГ | — |
3 грн.
|
|
— | Diodes D2V germanium, point. Designed to convert and detect signals with a frequency of up to 150 MHz in amplitude and phase detectors, as video detectors and DC component restorers in televisions, in ring modulators and frequency converters, in counting circuits and in low-power rectifiers. The main technical characteristics of the diode D2V: • Uopp max - Maximum direct reverse voltage: 30 V; • Inp max - Maximum forward current: 25 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 9 mA; • Iobr - Constant reverse current: no more than 250 µA at Uobr 30 V; • tvoc arr - Reverse recovery time: 3 µs; • Sd - Total capacitance: 0.2 pF at Uobr 1.5 V. | 0.7 | — | — | — | — | DIP | КД-4 | 30V | 25mA | — | — | Detector | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | single | — | |||||||
Varicap KV105B
#13953
|
26133 | СНГ | — |
10 грн.
|
— | 1.8 | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Diode bridge KTS407A
#13951
|
26131 | СНГ | — |
30 грн.
|
— | KTS407A A block of silicon, mesadiffusion diodes connected in a bridge circuit. Available in a plastic case with flexible leads. The main technical characteristics of the diode KTS407A: • Uobr and max - Maximum impulse reverse voltage: 400 V; • Inp max - Maximum forward current: 500 mA; • Inp and max - Maximum pulse forward current: 3 A; • fd - Operating frequency of the diode: 20 kHz; • Iobr - Constant reverse current: no more than 5 μA at Uobr 400 V; • tvoc - Reverse recovery time: 5 µs. | 0.5 | — | — | — | — | DIP | — | 400V | 500mA | 3A | — | Diode bridge | — | — | 500pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Diode D7Zh
#13950
|
26130 | СНГ | — |
9 грн.
|
|
— | Diodes germanium D7Zh, alloy. The main technical characteristics of the D7Zh diode: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 300 mA; • fd - Operating frequency of the diode: 2.4 kHz; • Unp - DC forward voltage: no more than 0.5 V at Inp 300 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 400 V. | 1.6 | — | — | — | — | DIP | КД-8 | 300V | 300mA | — | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | single | — | |||||||
Transistor KT837K
#13948
|
26127 | СНГ | — |
12 грн.
|
|
— | Transistors KT837K silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. The main technical characteristics of the transistor KT837K: • Transistor structure: pnp; • Рк t max - Constant power dissipation of the collector with a heat sink: 30 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 1 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 45 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 7.5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.15 mA; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 50... 150; • Rke us - Saturation resistance between collector and emitter: no more than 0.25 Ohm. | 2 | — | — | TO220 | Bipolar | DIP | — | — | — | — | — | — | PNP | — | 200pcs | 40В | 7,5A | 1МГц | 150 | — | — | — | — | — | — | — | — | — | — | |||||||
Zener diode 2S530A (=KS530A)
#13947
|
26126 | СНГ | — |
10 грн.
|
|
— | Zener diodes 2S530A silicon, planar, medium power. Designed to stabilize the rated voltage of 30 V in the stabilization current range of 1...27 mA. The main technical parameters of the zener diode 2S530A: • Rated stabilization voltage: 30 V at Ist 5 mA; • Stabilization voltage spread: 28.5... 31.5 V; • Temperature coefficient of stabilization voltage: ±0.1%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 200 Ohm at Ist 1 mA; • Minimum allowable stabilization current: 1 mA; • Maximum allowable stabilization current: 27 mA; • Maximum allowable dissipated power on the zener diode: 1 W; • Working range of ambient temperature: -60... +125 °С. | 0.8 | — | — | — | — | DIP | — | — | — | — | — | — | — | 1Вт | 100 pieces. | — | — | — | — | — | — | — | 30V | kd-8 | — | — | — | — | — | |||||||
Zener diode D814B
#13946
|
26125 | СНГ | — |
3 грн.
|
|
— | Zener diodes D814B silicon, alloy, medium power. Designed to stabilize the voltage of 8.0-9.5 V in the stabilization current range of 3...36 mA. | 0.8 | — | — | — | — | DIP | — | — | — | — | — | — | — | 340мВт | 100 pieces. | — | — | — | — | — | — | — | 9V | kd-8 | — | — | — | — | — | |||||||
Zener diode D818G
#13945
|
26124 | СНГ | — |
12 грн.
|
|
— | Zener diodes D818G silicon, diffusion-alloy, low power, precision. Designed to stabilize the nominal voltage of 9 V in the stabilization current range of 3...33 mA with high requirements for voltage stability in the temperature range of -60...+125 °C. The main technical parameters of the Zener diode D818G: • Rated stabilization voltage: 9 V at Ist 10 mA; • Stabilization voltage spread: 7.6... 10 V; • Temperature coefficient of stabilization voltage: +0.006%/°С; • Temporary stabilization voltage instability: ± 0.12%; • Zener diode differential resistance: 18 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Working range of ambient temperature: -60... +125 °С. | 0.8 | — | — | — | — | DIP | — | — | — | — | — | — | — | 300мВт | 100 pieces. | — | — | — | — | — | — | — | 9V | kd-8 | — | — | — | — | — | |||||||
Zener diode KS168A
#13943
|
26122 | СНГ | — |
3 грн.
|
|
— | Zener diodes KS168A silicon, alloy, low power. Designed to stabilize the nominal voltage of 6.8 V in the stabilization current range of 3...45 mA. The main technical parameters of the KS168A zener diode: • Rated stabilization voltage: 6.8 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: ±0.06%/°С; • Constant forward voltage: 1 V at Ipr 50 mA; • Zener diode differential resistance: 28 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 45 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Working range of ambient temperature: -60... +125 °С. | 0.8 | — | — | — | — | DIP | — | — | — | — | — | — | — | 300мВт | 100 pieces. | — | — | — | — | — | — | — | 6V8 | kd-8 | — | — | — | — | — | |||||||
Zener diode KS119A
#13942
|
26121 | СНГ | — |
12 грн.
|
|
— | Stabistors KS119A silicon, diffusion-alloy, low power. Designed for use in voltage stabilizers and as thermal compensating elements. The main technical parameters of the stabistor KS119A: • Rated stabilization voltage: 1.9 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: -0.4%/°С; • Differential resistance: 15 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 1 mA; • The maximum allowable stabilization current: 100 mA; • Maximum allowable power dissipation: 0.18 W; • Working range of ambient temperature: -60... +125 °С. | 0.8 | — | — | — | — | DIP | — | — | — | — | — | — | — | 180мВт | 100 pieces. | — | — | — | — | — | — | — | 1V9 | kd-8 | — | — | — | — | — | |||||||
Zener diode KS191F
#13941
|
26120 | СНГ | — |
40 грн.
|
|
— | Zener diodes KS191F silicon, epitaxial, low power, precision, class 0.02. Designed to stabilize the nominal voltage of 9.1 V in the stabilization current range of 3...20 mA with high requirements for voltage stability in the temperature range of -60...+100 °C in digital measuring instruments and other precision equipment. The main technical parameters of the KS191F zener diode: • Rated stabilization voltage: 9.1 V at Ist 10 mA; • Stabilization voltage spread: 8.65... 9.55 V; • Temperature coefficient of stabilization voltage: ±0.0005%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±0.02%; • Zener diode differential resistance: 18 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 20 mA; • Maximum allowable power dissipation on the zener diode: 0.2 W; • Working range of ambient temperature: -60... +100 °С. | 0.7 | — | — | — | — | DIP | — | — | — | — | — | — | — | 200мВт | 100 pieces. | — | — | — | — | — | — | — | 9V1 | kd-8 | — | — | — | — | — | |||||||
Zener diode KS191A
#13939
|
26118 | СНГ | — |
3 грн.
|
|
— | Zener diodes KS191A silicon, alloy, two-anode, low power. Designed to stabilize the nominal voltage of 9.1 V in the stabilization current range of 3...15 mA and to limit the voltage on both sides. The main technical parameters of the KS191A zener diode: • Rated stabilization voltage: 9.1 V at Ist 5 mA; • Temperature coefficient of stabilization voltage: ±0.06%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 18 Ohm at Ist 5 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 15 mA; • Maximum allowable power dissipation on the zener diode: 0.15 W; • Working range of ambient temperature: -55... +100 °С. | 0.3 | — | — | — | — | DIP | — | — | — | — | — | — | — | 150мВт | 200pcs | — | — | — | — | — | — | — | 9V1 | — | — | — | — | — | — | |||||||
Diode D245
#13938
|
26117 | СНГ | — |
35 грн.
|
|
— | Diodes D245 silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. The main technical characteristics of the diode D245: • Uopp max - Maximum direct reverse voltage: 300 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1.25 V at Inp 10 A; • Iobr - Constant reverse current: no more than 3000 μA at Uobr 300 V. | 13 | — | — | — | — | Screw | — | 300V | 10A | — | — | Rectifier | — | — | 40pcs | — | — | — | — | — | — | — | — | — | — | — | — | single | — | |||||||
Diode D246A
#13936
|
26115 | СНГ | — |
40 грн.
|
|
— | Diodes D246A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. The main technical characteristics of the D246A diode: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 3000 µA at Uobr 400 V. | 13 | — | — | — | — | DIP | — | 400V | 10A | — | — | Rectifier | — | — | 40pcs | — | — | — | — | — | — | — | — | — | — | — | — | single | — |
