Transistor 2T831V

Main technical characteristics of the 2T831V transistor:
• Transistor structure: npn;
• Ркт max - Constant power dissipation of the collector with heat sink: 5 W;
• fgr - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: not less than 4 MHz;
• Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 80 V;
• Uebo max - Maximum emitter-base voltage at a given reverse emitter current and open collector circuit: 5 V;
• Iк max - Maximum permissible direct collector current: 2 A;
• h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 25;
• Rke us - Saturation resistance between collector and emitter: no more than 0.6 Ohm.