Transistor KT626A

  • Transistor KT626A
Vendor code: 28714
Shop: in stock (97 pc.)
10 грн.
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10+ 0.50 грн. 5 9.50 грн.
50+ 1 грн. 10 9 грн.
100+ 2 грн. 20 8 грн.

Main technical characteristics of the KT626A transistor:
• Transistor structure: pnp;
• Рк max - Constant collector power dissipation: 6.5 W;
• fgr - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: not less than 75 MHz;
• Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 45 V;
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and open collector circuit: 4 V;
• Iк max - Maximum permissible direct collector current: 500 mA;
• Ikbo - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 10 μA (30V);
• h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 40... 260;
• Ск - Capacitance of the collector junction: no more than 150 pF;
• Rke us - Saturation resistance between collector and emitter: no more than 2 Ohms;
• tk - Time constant of the feedback circuit at high frequency: no more than 500 ps.

Brand nameСНГ
StructurePNP
Transistor typeBipolar
Power6Вт
Transistor case typeTO126
Mounting typeDIP
Weight g.0.7
Factory packaging500pcs
Collector-emitter voltage45В
Collector current500мА
Current gain40
Frequency70МГц

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