Diode bridge KTS402E
Block of silicon, diffusion diodes.
The main technical characteristics of the diode KTS402E:
• Uobr and max - Maximum impulse reverse voltage: 100 V;
• Inp max - Maximum forward current: 1000 mA;
• fd - Operating frequency of the diode: 5 kHz;
• Unp - DC forward voltage: no more than 4 V at Inp 1000 mA;
• Iobr - Constant reverse current: no more than 125 μA at Uobr 100 V.
Diode type | Diode bridge |
Urev. max, V | 100V |
Ipr. max. | 1A |
Brand name | СНГ |
Mounting type | DIP |
Weight g. | 5.7 |
Factory packaging | 100 pieces. |
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