Transistor 2T808A (=KT808A)

  • Transistor 2T808A (=KT808A)
Артикул: 26020
in stock (3 pc.)
150 грн.
Доступные скидки
Название Скидка Скидка, % Цена
10+ 7,50 грн. 5 142,50 грн.
50+ 15 грн. 10 135 грн.
100+ 30 грн. 20 120 грн.

The main technical characteristics of the transistor 2T808A:
• Transistor structure: npn;
• Рк t max - Constant power dissipation of the collector with a heat sink: 50W;
• fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 7.2 MHz;
• Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 120 (250 imp.) V;
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 4 V;
• Ik max - Maximum allowable DC collector current: 10 A;
• IКеr - Collector-emitter reverse current at given collector-emitter reverse voltage and resistance in the base-emitter circuit: 3 mA (120V);
• h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 10... 50;
• Sk - Collector junction capacitance: no more than 500 pF.

Brand nameСНГ
StructureNPN
Transistor typeBipolar
Power50Вт
Transistor case typeКТЮ-3-20
Mounting typeDIP
Weight g.30
Factory packaging10 pieces.
Collector-emitter voltage120В
Collector current10А
Current gain50

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