Transistor 2T903B (=KT903B)

  • Transistor 2T903B (=KT903B)
Артикул: 24608
in stock (339 pc.)
40 грн.
Доступные скидки
Название Скидка Скидка, % Цена
10+ 2 грн. 5 38 грн.
50+ 4 грн. 10 36 грн.
100+ 8 грн. 20 32 грн.

The main technical characteristics of the transistor 2T903B:
• Transistor structure: npn;
• Рк t max - Constant power dissipation of the collector with a heat sink: 30 W;
• fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: more than 120 MHz;
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 4 V;
• Ik max - Maximum allowable DC collector current: 3 A;
• Ik and max - The maximum allowable collector pulse current: 10 A;
• h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 40... 180;
• Sk - Collector junction capacitance: no more than 180 pF;
• Rke us - Saturation resistance between collector and emitter: no more than 1 ohm;
• Рout - Transistor output power: not less than 10 W at 50 MHz.

Brand nameСНГ
StructureNPN
Transistor typeBipolar
Power30Вт
Transistor case typeКТЮ-3-3
Mounting typeDIP
Weight g.22
Factory packaging20pcs
Collector-emitter voltage60В
Collector current10А
Current gain180

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