Transistor KT3101AM
Название | Скидка | Скидка, % | Цена |
---|---|---|---|
10+ | 0,75 грн. | 5 | 14,25 грн. |
50+ | 1,50 грн. | 10 | 13,50 грн. |
100+ | 3 грн. | 20 | 12 грн. |
KT3101A-2 transistors are silicon epitaxial-planar npn amplifying structures with a normalized noise figure at frequencies of 1 and 2.25 GHz.
Designed for use in the input and subsequent stages of microwave amplifiers.
The main technical characteristics of the transistor KT3101AM:
• Transistor structure: npn
• Рк max - Constant power dissipation of the collector: 100 mW;
• fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 4000 MHz;
• Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 15 V;
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 2.5 V;
• Ik max - Maximum allowable DC collector current: 20 mA;
• Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 0.5 μA (15V);
• h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter: 35...300;
• Sk - Collector junction capacitance: no more than 1.5 pF;
• Ksh - Transistor noise figure: no more than 4.5 dB at a frequency of 2.25 GHz
• tk - Time constant of the feedback circuit at high frequency: no more than 10 ps.
Brand name | СНГ |
Structure | NPN |
Transistor type | Bipolar |
Power | 100мВт |
Transistor case type | КТ-14 |
Mounting type | SMD |
Weight g. | 0.25 |
Factory packaging | 20pcs |
Collector-emitter voltage | 15В |
Collector current | 20мА |
Current gain | 300 |
Frequency | 4ГГц |
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