Transistor KT3102A

  • Transistor KT3102A
Артикул: 24651
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25 грн.
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100+ 5 грн. 20 20 грн.

The main technical characteristics of the transistor KT3102A:
• Transistor structure: npn
• Рк max - Constant power dissipation of the collector: 250 mW;
• fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 300 MHz;
• Vkbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 50 V;
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V;
• Ik max - Maximum allowable DC collector current: 100 mA;
• Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 0.05 μA (50V);
• h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter: 100...250;
• Sk - Collector junction capacitance: no more than 6 pF;
• Ksh - Transistor noise figure: no more than 10 dB at a frequency of 1 kHz
• tk - Time constant of the feedback circuit at high frequency: no more than 100 ps.

Brand nameСНГ
StructureNPN
Power250мВт
Transistor case typeКТ-1
Mounting typeDIP
Weight g.0.34
Factory packaging100 pieces.
Collector-emitter voltage50В
Collector current200мА
Current gain250
Frequency300МГц

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