Transistor KT342BM
Название | Скидка | Скидка, % | Цена |
---|---|---|---|
10+ | 0,10 грн. | 5 | 1,90 грн. |
50+ | 0,20 грн. | 10 | 1,80 грн. |
100+ | 0,40 грн. | 20 | 1,60 грн. |
The main technical characteristics of the transistor KT342BM:
• Transistor structure: npn;
• Рк max - Constant power dissipation of the collector: 250 mW;
• fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 300 MHz;
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V;
• Ik max - Maximum allowable DC collector current: 50 mA;
• Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.05 μA;
• h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 200... 500;
• Sk - Collector junction capacitance: no more than 8 pF;
• Rke us - Saturation resistance between collector and emitter: no more than 10 Ohm;
• tk - Time constant of the feedback circuit at high frequency: no more than 200 ps.
Brand name | СНГ |
Structure | NPN |
Transistor type | Bipolar |
Power | 250мВт |
Transistor case type | TO92 |
Mounting type | DIP |
Weight g. | 0.3 |
Factory packaging | 1000pcs |
Collector-emitter voltage | 25В |
Collector current | 50мА |
Current gain | 500 |
Frequency | 300МГц |
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