Transistor KT342BM

  • Transistor KT342BM
Артикул: 25933
in stock (282 pc.)
2 грн.
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100+ 0,40 грн. 20 1,60 грн.

The main technical characteristics of the transistor KT342BM:
• Transistor structure: npn;
• Рк max - Constant power dissipation of the collector: 250 mW;
• fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 300 MHz;
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V;
• Ik max - Maximum allowable DC collector current: 50 mA;
• Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.05 μA;
• h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 200... 500;
• Sk - Collector junction capacitance: no more than 8 pF;
• Rke us - Saturation resistance between collector and emitter: no more than 10 Ohm;
• tk - Time constant of the feedback circuit at high frequency: no more than 200 ps.

Brand nameСНГ
StructureNPN
Transistor typeBipolar
Power250мВт
Transistor case typeTO92
Mounting typeDIP
Weight g.0.3
Factory packaging1000pcs
Collector-emitter voltage25В
Collector current50мА
Current gain500
Frequency300МГц

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