Transistor KT349B
Название | Скидка | Скидка, % | Цена |
---|---|---|---|
10+ | 0.30 грн. | 5 | 5.70 грн. |
50+ | 0.60 грн. | 10 | 5.40 грн. |
100+ | 1.20 грн. | 20 | 4.80 грн. |
The main technical characteristics of the transistor KT349B:
• Transistor structure: pnp;
• Рк max - Constant power dissipation of the collector: 200 mW;
• fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 300 MHz;
• Uкer max - Maximum collector-emitter voltage at a given collector current and a given (final) resistance in the base-emitter circuit: 15 V (10 kOhm);
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 4 V;
• Ik max - The maximum allowable DC collector current: 10 mA;
• Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1 μA;
• h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 40... 160;
• Sk - Collector junction capacitance: no more than 6 pF;
• Rke us - Saturation resistance between collector and emitter: no more than 30 ohms.
Brand name | СНГ |
Structure | PNP |
Transistor type | Bipolar |
Power | 200мВт |
Transistor case type | КТ-1-7 |
Mounting type | DIP |
Weight g. | 0.5 |
Factory packaging | 100 pieces. |
Collector-emitter voltage | 15В |
Collector current | 40мА |
Current gain | 160 |
Frequency | 300МГц |
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