Transistor KT352A
Название | Скидка | Скидка, % | Цена |
---|---|---|---|
10+ | 0.15 грн. | 5 | 2.85 грн. |
50+ | 0.30 грн. | 10 | 2.70 грн. |
100+ | 0.60 грн. | 20 | 2.40 грн. |
The main technical characteristics of the transistor KT352A:
• Transistor structure: pnp;
• Рк max - Constant power dissipation of the collector: 300 mW;
• fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 200 MHz;
• Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 20 V;
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V;
• Ik and max - The maximum allowable collector pulse current: 200 mA;
• Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1 μA;
• h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 25... 120;
• Sk - Collector junction capacitance: no more than 15 pF;
• Rke us - Saturation resistance between collector and emitter: no more than 3 ohms.
Brand name | INTEGRAL |
Structure | PNP |
Transistor type | Bipolar |
Power | 300мВт |
Transistor case type | TO92 |
Mounting type | DIP |
Weight g. | 0.3 |
Factory packaging | 500pcs |
Collector-emitter voltage | 15В |
Collector current | 200мА |
Current gain | 120 |
Frequency | 200МГц |
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