Transistor KT603B Au

  • Transistor KT603B Au
Vendor code: 24656
not in stock
60 грн.
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The main technical characteristics of the transistor KT603B:
• Transistor structure: npn;
• Рк max - Constant power dissipation of the collector: 0.5 W;
• fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 200 MHz;
• Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 30 V (1 kOhm);
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 3 V;
• Ik max - Maximum allowable DC collector current: 300 mA;
• Ik and max - The maximum allowable collector pulse current: 600 mA;
• Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 10 µA;
• h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 60;
• Sk - Collector junction capacitance: no more than 15 pF;
• Rke us - Saturation resistance between collector and emitter: no more than 7 ohms.

Brand nameСНГ
StructureNPN
Transistor typeBipolar
Power500мВт
Transistor case typeКТЮ-3-6
Mounting typeDIP
Weight g.1.5
Factory packaging100 pieces.
Collector-emitter voltage30В
Collector current300мА
Current gain60
Frequency200МГц

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