Transistor KT603G
Название | Скидка | Скидка, % | Цена |
---|---|---|---|
10+ | 0,70 грн. | 5 | 13,30 грн. |
50+ | 1,40 грн. | 10 | 12,60 грн. |
100+ | 2,80 грн. | 20 | 11,20 грн. |
The main technical characteristics of the transistor KT603G:
• Transistor structure: npn;
• Рк max - Constant power dissipation of the collector: 0.5 W;
• fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 200 MHz;
• Uкer max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 15 V (1kΩ);
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 3 V;
• Ik max - Maximum allowable DC collector current: 300 mA;
• Ik and max - The maximum allowable collector pulse current: 600 mA;
• Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 5 μA;
• h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 60;
• Sk - Collector junction capacitance: no more than 15 pF;
• Rke us - Saturation resistance between collector and emitter: no more than 7 ohms.
Brand name | СНГ |
Structure | NPN |
Transistor type | Bipolar |
Power | 500мВт |
Transistor case type | КТЮ-3-3 |
Mounting type | DIP |
Weight g. | 1.5 |
Factory packaging | 100 pieces. |
Collector-emitter voltage | 15В |
Collector current | 300мА |
Current gain | 60 |
Frequency | 200МГц |
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